scholarly journals On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Author(s):  
Reyhaneh Mahlouji ◽  
Yue Zhang ◽  
Marcel A. Verheijen ◽  
Jan P. Hofmann ◽  
Wilhelmus M. M. Kessels ◽  
...  
1995 ◽  
Vol 413 ◽  
Author(s):  
Leonard. J. Buckley ◽  
Mark Eashoo

ABSTRACTMicrowave and millimeterwave obscurants based on typical millimeterwave materials do not environmentally degrade with respect to their physical and electrical properties. The use of conductive polymer coated films and fibers with inherent environmental instabilities are being investigated as possible alternatives. Achieving the optimum electrical performance is highly dependent upon the polymer/dopant combination, deposition conditions, morphology, and volume of the coating that is used. Several conductive polymer coated fiber systems were investigated via thermal analysis. The effects of processing conditions on performance and stability were studied.


Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 693
Author(s):  
Keren M. Freedy ◽  
Stephen J. McDonnell

In this review on contacts with MoS2, we consider reports on both interface chemistry and device characteristics. We show that there is considerable disagreement between reported properties, at least some of which may be explained by variability in the properties of geological MoS2. Furthermore, we highlight that while early experiments using photoemission to study the interface behavior of metal-MoS2 showed a lack of Fermi-level pinning, device measurements repeatedly confirm that the interface is indeed pinned. Here we suggest that a parallel conduction mechanism enabled by metallic defects in the MoS2 materials may explain both results. We note that processing conditions during metal depositions on MoS2 can play a critical role in the interface chemistry, with differences between high vacuum and ultra-high vacuum being particularly important for low work function metals. This can be used to engineer the interfaces by using thin metal-oxide interlayers to protect the MoS2 from reactions with the metals. We also report on the changes in the interfaces that can occur at high temperature which include enhanced reactions between Ti or Cr and MoS2, diffusion of Ag into MoS2, and delamination of Fe. What is clear is that there is a dearth of experimental work that investigates both the interface chemistry and device properties in parallel.


RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14733-14745 ◽  
Author(s):  
Juan Gao ◽  
Gang He ◽  
Lin Hao ◽  
Die Wang ◽  
Lin Zhao

Ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition were deposited on Si substrates. HfTiAlO possesses more excellent interface performance and electrical properties than HfTiO and TiAlO.


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 980 ◽  
Author(s):  
Gabriel Constantinescu ◽  
Sergey M. Mikhalev ◽  
Aleksey D. Lisenkov ◽  
Daniela V. Lopes ◽  
Artur R. Sarabando ◽  
...  

This work further explores the possibilities for designing the high-temperature electrical performance of the thermoelectric Ca3Co4O9 phase, by a composite approach involving separate metallic iron and nickel particles additions, and by employing two different sintering schemes, capable to promote the controlled interactions between the components, encouraged by our recent promising results obtained for similar cobalt additions. Iron and nickel were chosen because of their similarities with cobalt. The maximum power factor value of around 200 μWm−1K−2 at 925 K was achieved for the composite with the nominal nickel content of 3% vol., processed via the two-step sintering cycle, which provides the highest densification from this work. The effectiveness of the proposed approach was shown to be strongly dependent on the processing conditions and added amounts of metallic particles. Although the conventional one-step approach results in Fe- and Ni-containing composites with the major content of the thermoelectric Ca3Co4O9 phase, their electrical performance was found to be significantly lower than for the Co-containing analogue, due to the presence of less-conducting phases and excessive porosity. In contrast, the relatively high performance of the composite with a nominal nickel content of 3% vol. processed via a two-step approach is related to the specific microstructural features from this sample, including minimal porosity and the presence of the Ca2Co2O5 phase, which partially compensate the complete decomposition of the Ca3Co4O9 matrix. The obtained results demonstrate different pathways to tailor the phase composition of Ca3Co4O9-based materials, with a corresponding impact on the thermoelectric performance, and highlight the necessity of more controllable approaches for the phase composition tuning, including lower amounts and different morphologies of the dispersed metallic phases.


1987 ◽  
Vol 105 ◽  
Author(s):  
K. Shenai ◽  
P. A. Piacente ◽  
B. J. Baliga

AbstractDetailed electrical characteristics of TiSi2/n+-polysilicon/SiO2/Si MOS capacitors stressed under a variety of high temperature processing conditions is reported. These devices have ˜2000Å TiSi2 formed by a two-step thermal anneal on heavily POCl3doped polysilicon with thicknesses of 6 kÅ and 8 kÅ. These structures were capped with 8 kÅ of SiO2 and stressed in nitrogen at process temperatures in the range of 700° C to 1100° C. The electrical performance was evaluated in terms of I-V, C-V, Fowler-Nordheim tunneling, and SiO2/Si interface characteristics of MOS structures. A systematic degradation of the SiO2/Si interface was observed due to process limitations of TiSi2 at high Lemperatures.


Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.


Author(s):  
L. M. Gignac ◽  
K. P. Rodbell

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.


2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


1997 ◽  
Vol 473 ◽  
Author(s):  
Michael Lane ◽  
Robert Ware ◽  
Steven Voss ◽  
Qing Ma ◽  
Harry Fujimoto ◽  
...  

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.


2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.


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