scholarly journals Enhancement of photovoltage by electronic structure evolution in multiferroic Mn-doped BiFeO3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Seiji Nakashima ◽  
Tohru Higuchi ◽  
Akira Yasui ◽  
Toyohiko Kinoshita ◽  
Masaru Shimizu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Photovoltaic Effect ◽  
Ferroelectric Materials ◽  
Voltage Source ◽  
Structure Evolution ◽  
X Ray ◽  
Converse Piezoelectric Effect

Abstract The bulk photovoltaic effect (BPVE) is a mechanism of recent focus for novel solar cells that exceed the power conversion efficiency of p–n junction solar cells because of the quantum mechanical effect to generate photocurrent known as shift current. Ferroelectrics are receiving attention again because of their high voltage generation by the BPVE and converse piezoelectric effect to realize high performance optical actuators. We have investigated the BPVE in ferroelectric BiFeO3 (BFO) single crystal thin films, whereby the photovoltage was enhanced by Mn doping, and 852 V generation was demonstrated at 80 K. The enhancement mechanism was also investigated using soft and hard X-ray photoelectron spectroscopy (SXPES, HAXPES), and soft X-ray absorption spectroscopy with synchrotron radiation. This report reveals a way to new voltage source applications employing the BPVE for high impedance devices with ferroelectrics. Important aspects for designing ferroelectric materials by impurity doping are also discussed.

Use of anti-solvent to enhance thermoelectric response of hybrid-halide perovskite thin films

2022 ◽  
Author(s):  
Shrikant SAINI ◽  
Izuki Matsumoto ◽  
Sakura Kishishita ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Cost Effective ◽  
Performance Tuning ◽  
Charge Carrier Density ◽  
X Ray ◽  
Thermoelectric Energy Harvesting ◽  
Halide Perovskite

Abstract Hybrid halide perovskite has been recently focused on thermoelectric energy harvesting due to the cost-effective fabrication approach and ultra-low thermal conductivity. To achieve high performance, tuning of electrical conductivity is a key parameter that is influenced by grain boundary scattering and charge carrier density. The fabrication process allows tuning these parameters. We report the use of anti-solvent to enhance the thermoelectric performance of lead-free hybrid halide perovskite, CH3NH3SnI3, thin films. Thin films with anti-solvent show higher connectivity in grains and higher Sn+4 oxidation states which results in enhancing the value of electrical conductivity. Thin films were prepared by a cost-effective wet process. Structural and chemical characterizations were performed using x-ray diffraction, scanning electron microscope, and x-ray photoelectron spectroscopy. The value of electrical conductivity and the Seebeck coefficient were measured near room temperature. The high value of power factor (1.55 µW/m.K2 at 320 K) was achieved for thin films treated with anti-solvent.

Surface Passivation of p-GaTe Layered Crystals for Improved p-GaTe/n-InSe Heterojunction Solar Cells

2010 ◽  
Vol 1268 ◽  
Author(s):  
Krishna C. Mandal ◽  
Sandip Das ◽  
Ramesh Krishna ◽  
Peter G. Muzykov ◽  
Shuguo Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Short Circuit ◽  
Solar Cell Performance ◽  
X Ray ◽  
Heterojunction Solar Cells

AbstractGaTe and GaTe:In single crystals were grown from high purity Ga (7N) and zone refined Te (>7N) precursor materials. InSe thin films were deposited by thermal evaporation onto the sulfur passivated GaTe:In substrates at various substrate temperatures from 450K-550K to fabricate p-GaTe:In/n-InSe heterojunction solar cells. Scanning electron microscopy (SEM), X-ray diffraction (XRD), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) were used to characterize GaTe:In crystals and InSe thin film surfaces. The current-voltage characteristics of p-GaTe:In/n-InSe solar cells were measured under dark and under illumination of 75mW/cm2. Dark J-V measurements showed that the reverse saturation current density (J0) decreased from 3.8 x 10-6 A/cm2 to 1.5 x 10-9 A/cm2 and the ideality factor was reduced from 2.04 to 1.15 as a result of surface passivation. Under illumination of 75 mW/cm2, the open-circuit voltage (Voc) increased from 0.54V to 0.68V and short-circuit current density (Jsc) increased from 7.19 mA/cm2 to 8.65 mA/cm2 for solar cells with surface passivated GaTe:In substrates, leading to an increased solar cell efficiency of 5.03%. EPMA measurements revealed that the InSe thin films deposited at 550 K on GaTe:In substrates were near stoichiometric with enhanced grain size contributing also to better solar cell performance.

Thermally Evaporated AgGaTe2 Thin Films For Low-Cost p-AgGaTe2/n-Si Heterojunction Solar Cells

2002 ◽  
Vol 744 ◽  
Author(s):  
Krishna C. Mandal ◽  
Anton Smirnov ◽  
Utpal N. Roy ◽  
Arnold Burger
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Photoelectron Spectroscopy ◽  
Antireflection Coating ◽  
Chalcopyrite Structure ◽  
Solar Simulator ◽  
Photovoltaic Properties ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Heterojunction Solar Cells

ABSTRACTHigh quality polycrystalline AgGaTe2 (AGT) thin films were deposited on H-terminated n-Si substrates by controlled thermal evaporation method at various substrate temperatures (300–500 K). X-ray diffraction (XRD) studies showed that all films were of chalcopyrite structure and while the films were deposited at 300 K had random grain orientation, the films deposited at higher substrate temperature (500 K) showed preferred (112) orientation. The composition of the films was thoroughly analyzed by energy dispersive x-ray analysis (EDAX) and by x-ray photoelectron spectroscopy (XPS) with and without argon ion etching. The ultraviolet-visible (UV-Vis) spectra showed the optical bandgap of 1.16 eV, with sharper band edge for the films deposited at higher temperature. The films were p-type and the resistivities of the as deposited at 300 and 500 K were 2.8 × 104 and 1.2 × 103 Ω. cm respectively. p-AgGaTe2/n-Si heterojunction solar cells, having an active area of 0.12 cm2 and without any antireflection coating, were fabricated. It was observed that the films deposited at 500 K produced junctions with improved photovoltaic properties. Under solar simulator AM1 illumination, the improved junctions exhibited an efficiency of 4.8% whereas the films deposited at 300 K showed an efficiency of 2.1%.

scholarly journals Ionic Conductivities of Lithium Phosphorus Oxynitride Glasses, Polycrystals and Thin Films

1994 ◽  
Vol 369 ◽  
Author(s):  
B. Wang ◽  
J. B. Bates ◽  
B. C. Chakoumakos ◽  
B. C. Sales ◽  
B. S. Kwak ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance Liquid Chromatography ◽  
Liquid Chromatography ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Ionic Conductivities ◽  
Small Addition ◽  
Impedance Measurements ◽  
X Ray ◽  
Lithium Phosphorus Oxynitride

AbstractVarious lithium phosphorus oxynitrides have been prepared in the form of glasses, polycrystals, and thin films. The structures of these compounds were investigated by X-ray and neutron diffraction, X-ray photoelectron spectroscopy (XPS), and high-performance liquid chromatography (HPLC). The ac impedance measurements indicate a significant improvement of ionic conductivity as the result of incorporation of nitrogen into the structure. In the case of polycrystalline Li2.88PO3.73N0.14 with the γ-Li3PO4 structure, the conductivity increased by several orders of magnitude on small addition of nitrogen. The highest conductivities in the bulk glasses and thin films were found to be 3.0 × 10-7 and 8.9 × 10-7 S-cm-1 at 25°C, respectively.

scholarly journals Charge Transfer in Mixed-Phase TiO2 Photoelectrodes for Perovskite Solar Cells

2020 ◽  
Vol 12 (3) ◽  
pp. 788 ◽  
Author(s):  
Anna Nikolskaia ◽  
Marina Vildanova ◽  
Sergey Kozlov ◽  
Nikolai Tsvetkov ◽  
Liudmila Larina ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Photoelectron Spectroscopy ◽  
High Efficiency ◽  
Anatase Phase ◽  
Perovskite Solar Cells ◽  
Band Alignment ◽  
Mixed Phase ◽  
X Ray

In mesoscopic perovskite solar cells (PSCs) the recombination processes within the TiO2 photoelectrode and at the TiO2/perovskite interface limit power conversion efficiency. To overcome this challenge, we investigated the effect of TiO2 phase composition on the electronic structure of TiO2 photoelectrodes, as well as on PSCs performance. For this, a set of PSCs based on TiO2 thin films with different content of anatase and rutile particles was fabricated under ambient conditions. X-ray diffraction, optical spectroscopy and scanning electron microscopy were used to study the structural, morphological and optical characteristics of TiO2 powders and TiO2-based thin films. X-ray photoelectron spectroscopy (XPS) analysis of anatase revealed a cliff conduction band alignment of 0.2 eV with respect to the rutile. Energy band alignment at the anatase/rutile/perovskite interfaces deduced from the XPS data provides the possibility for interparticle electron transport from the rutile to anatase phase and the efficient blocking of electron recombination at the TiO2/perovskite interface, leading to efficient electron-hole separation in PSCs based on mixed-phase TiO2 photoelectrodes. PSCs based on TiO2 layers with 60/40 anatase/rutile ratio were characterized by optimized charge extraction and low level of recombination at the perovskite/TiO2 interface and showed the best energy conversion efficiency of 13.4% among the studied PSCs. Obtained results provide a simple and effective approach towards the development of the next generation high efficiency PSCs.

Characterizations of the Perpendicular Magnetic Anisotropy in Ultrathin Films of Ta-CoFeB-MgO by X-Ray Photoelectron Spectroscopy

2013 ◽  
Vol 739 ◽  
pp. 61-65 ◽  
Author(s):  
Chih Wei Cheng ◽  
H.M. Chen ◽  
C.H. Shiue ◽  
Y.Y. Lin ◽  
Y.Y. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Random Access ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Tunnel Junction ◽  
Dead Layer ◽  
X Ray ◽  
Bottom Structures

The high magnetic anisotropy may enhance the thermal stability of the magnetic tunnel junction of CoFeB/MgO/CoFeB, which is a promising candidate for the high performance magnetic random access memory (MRAM). However, the interface stabilized perpendicular magnetic anisotropy (PMA) is not completely understood at this moment. In this study, we fabricated separated top and bottom Ta-CoFeB-MgO thin films and found both structures showed strong PMA after a 300 °C post annealing. However, the top structure has thicker magnetic dead layer and much higher coercivity relative to the bottom structures. The asymmetry between the top and bottom Ta-CoFeB-MgO structures may be attributed to the crystalline structure and interface diffusion. X-ray photoelectron spectroscopy depth profile reveals that the boron diffuses mainly toward to the Ta side at CoFeB-Ta interface in both top and bottom structures. It is mainly Ta that appears at the CoFeB-MgO interface of top structure while it is TaOx that appears at the CoFeB-MgO interface of bottom structure. A detailed discussion about the chemical states at the interface in Ta-CoFeB-MgO thin films will be given.

Phase configuration, nanostructure, and mechanical behaviors in Ti-B-C-N thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2520-2527 ◽  
Author(s):  
Yonghao Lu ◽  
Junping Wang ◽  
Yaogen Shen ◽  
Dongbai Sun
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Solid Solution Hardening ◽  
Mechanical Behaviors ◽  
Additional Increase ◽  
N Content ◽  
X Ray ◽  
Nanocomposite Thin Films ◽  
The Cost ◽  
Nano Grains

A series of Ti-B-C-N thin films were deposited on Si (100) at 500 °C by incorporation of different amounts of N into Ti-B-C using reactive unbalanced dc magnetron sputtering in an Ar-N2 gas mixture. The effect of N content on phase configuration, nanostructure evolution, and mechanical behaviors was studied by x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy, and microindentation. It was found that the pure Ti-B-C was two-phased quasi-amorphous thin films comprising TiCx and TiB2. Incorporation of a small amount of N not only dissolved into TiCx but also promoted growth of TiCx nano-grains. As a result, nanocomposite thin films of nanocrystalline (nc-) TiCx(Ny) (x + y < 1) embedded into amorphous (a-) TiB2 were observed until nitrogen fully filled all carbon vacancy lattice (at that time x + y = 1). Additional increase of N content promoted formation of a-BN at the cost of TiB2, which produced nanocomposite thin films of nc-Ti(Cx,N1-x) embedded into a-(TiB2, BN). Formation of BN also decreased nanocrystalline size. Both microhardness and elastic modulus values were increased with an increase of N content and got their maximums at nanocomposite thin films consisting of nc-Ti(Cx,N1-x) and a-TiB2. Both values were decreased after formation of BN. Residual compressive stress value was successively decreased with an increase of N content. Enhancement of hardness was attributed to formation of nanocomposite structure and solid solution hardening.

scholarly journals Novel Carbon Dots Derived from Glycyrrhizae Radix et Rhizoma and Their Anti-Gastric Ulcer Effect

Molecules ◽  
2021 ◽  
Vol 26 (6) ◽  
pp. 1512
Author(s):  
Yuhan Liu ◽  
Meiling Zhang ◽  
Jinjun Cheng ◽  
Yue Zhang ◽  
Hui Kong ◽  
...  
Keyword(s):  
Gastric Ulcer ◽  
Photoelectron Spectroscopy ◽  
Carbon Dots ◽  
High Performance ◽  
Raw264.7 Cells ◽  
Mice Model ◽  
X Ray ◽  
Glycyrrhizae Radix ◽  
Transmission Electron ◽  
High Resolution Tem

Glycyrrhizae Radix et Rhizoma (GRR) is one of the commonly used traditional Chinese medicines in clinical practice, which has been applied to treat digestive system diseases for hundreds of years. GRR is preferred for anti-gastric ulcer, however, the main active compounds are still unknown. In this study, GRR was used as precursor to synthesize carbon dots (CDs) by a environment-friendly one-step pyrolysis process. GRR-CDs were characterized by using transmission electron microscopy, high-resolution TEM, fourier transform infrared, ultraviolet-visible and fluorescence spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and high-performance liquid chromatography. In addition, cellular toxicity of GRR-CDs was studied by using CCK-8 in RAW264.7 cells, and the anti-gastric ulcer activity was evaluated and confirmed using mice model of acute alcoholic gastric ulcer. The experiment confirmed that GRR-CDs were the spherical structure with a large number of active groups on the surface and their particle size ranged from 2 to 10 nm. GRR-CDs had no toxicity to RAW264.7 cells at concentration of 19.5 to 5000 μg/mL and could reduce the oxidative damage of gastric mucosa and tissues caused by alcohol, as demonstrated by restoring expression of malondialdehyde, superoxide dismutase and nitric oxide in serum and tissue of mice. The results indicated the explicit anti-ulcer activity of GRR-CDs, which provided a new insights for the research on effective material basis of GRR.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

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