scholarly journals Design and performance of a custom ASIC digitizer for wire chamber readout in 65 nm CMOS technology

2015 ◽  
Vol 10 (06) ◽  
pp. P06007-P06007 ◽  
Author(s):  
M.J. Lee ◽  
D.N. Brown ◽  
J.K. Chang ◽  
D. Ding ◽  
D. Gnani ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Wire Chamber ◽  
And Performance

scholarly journals Design and implementation of CNTFET based ternary 1x1 memories

2019 ◽  
Vol 8 (3) ◽  
pp. 175 ◽  
Author(s):  
S.Tamil Selvan ◽  
M. Sundararajan
Keyword(s):  
High Performance ◽  
Data Access ◽  
Cmos Technology ◽  
Access Time ◽  
The Novel ◽  
Design And Implementation ◽  
Technology Process ◽  
Sram Cell ◽  
And Performance ◽  
Power Application

In this paper presented Design and implementation of CNTFET based Ternary 1x1 RAM memories high-performance digital circuits. CNTFET Ternary 1x1 SRAM memories is implement using 32nm technology process. The CNTFET decresase the diameter and performance matrics like delay,power and power delay, The CNTFET Ternary 6T SRAM cell consists of two cross coupled Ternary inverters one is READ and another WRITE operations of the Ternary 6T SRAM cell are performed with the Tritline using HSPICE and Tanner tools in this tool is performed high accuracy. The novel based work can be used for Low Power Application and Access time is less of compared to the conventional CMOS Technology. The CNTFET Ternary 6T SRAM array module (1X1) in 32nm technology consumes only 0.412mW power and data access time is about 5.23ns.

scholarly journals Energy Efficient SRAM

2019 ◽  
Vol 8 (9) ◽  
pp. 1086-1091
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Dynamic Logic ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Static Noise Margin ◽  
Noise Margin ◽  
And Performance ◽  
The Stability ◽  
Static Noise

Memories are an essential unit of any digital circuit, thus their power consumption must be considered during the designing process of the cells. To improve performance, reduce delay and increase stability, it is advisable to decrease the power consumed by the memory. Due to high demand of speed, high performance, there’s a need to decrease the size of the device, thereby increasing the devices placed per chip. This high integration makes chips more complex but improves device performance. Design of SRAM cells with speed and low power is crucial so as to replace DRAMs. The layout of SRAM has advanced to meet the requirements of the present industry in accordance with parameters like delay, power consumption and stability etc. This paper presents the aim of analyzing different technologies used to make SRAM more efficient in terms of parameters such as static noise margin, latency and dissipation of power. The stability investigation of SRAM cells are usually derived from the Static Noise Margin (SNM) analysis. Here we observe a SRAM design which has used dynamic logic and pass transistor logic. We further study the effects made on this design by employing various technologies such as AVL-S, AVL-G, AVL and MT-CMOS, at 180nm CMOS technology to achieve enhancements in delay, power consumption and performance. The proposed circuits are simulated and the results obtained have been analyzed to show significant improvement over conventional SRAM designs. Cadence Virtuoso simulation is used to confirm all the results obtained in this paper for the simulation of 180 nm CMOS technology SRAMs.

scholarly journals Design and Characteristics of CMOS Inverter based on Multisim and Cadence

2021 ◽  
Vol 2108 (1) ◽  
pp. 012034
Author(s):  
Haoran Xu ◽  
Jianghua Ding ◽  
Jian Dang
Keyword(s):  
Metal Oxide ◽  
Analog Circuits ◽  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Data Converters ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Inverter ◽  
And Performance

Abstract Known as complementary symmetrical metal oxide semiconductor (cos-mos), complementary metal oxide semiconductor is a metal oxide semiconductor field effect transistor (MOSFET) manufacturing process, which uses complementary and symmetrical pairs of p-type and n-type MOSFETs to realize logic functions. CMOS technology is used to build integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS) and other digital logic circuits. CMOS technology is also used in analog circuits, such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for various types of communications. Based on multisim 14.0 and cadence, the characteristics and performance of CMOS inverter are studied by simulation.

scholarly journals Design and Performance Analysis of 4-bit Nano-processor Design for Low Area, Low Power and Minimum Delay Using 32nm FinFET Technology

2021 ◽  
Vol 12 ◽  
pp. 1-8
Author(s):  
Sujata A. A ◽  
Lalitha. Y. S
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Software Tool ◽  
Cmos Technology ◽  
Effective Control ◽  
Low Area ◽  
Area Reduction ◽  
And Performance ◽  
Artificial Neural Network Ann ◽  
Universal Gates

The recent technologies in VLSI Chips have grown in terms of scaling of transistor and device parameters but still, there is challenging task for controlling current between the source and drain terminals. For effective control of device current, the FinFET transistors have come into VLSI chip, through which current can be controlled effectively. This paper is to address the issues present in CMOS technology and majorly concentrated on the proposed 4-bit Nano processor using FinFET 32nm technology by using the Cadence Virtuoso software tool. In the proposed Nano processor, the first part is to design using 4bit ALU which includes all basic and universal gates, efficient and high-speed adder, multiplier, and multiplexer. The Carry Save Adder (CSA) and multiplier are the major subcomponents which can optimize the power consumption and area reduction. The second part of the proposed Nano processor is 4-bit 6T SRAM and Encoder and decoder and also Artificial Neural Network (ANN). All these subcomponents are designed at analog transistors (Schematic level) through which the Graphic Data System (GDS-II) is generated through mask layout design. Finally, the verification and validation are done using DRC and LVS, at the last chip-level circuit is generated for chip fabrication. The ALU is designed by using CMOS inverters and the designed ALU schematic is simulated through 32nm FinFET technological library and compared with CMOS technology which is simulated through 32nm CMOS library (without FinFET). The power consumption of AND, OR, XOR, NOT, NAND gates, SRAM, Encoder, Decoder and ANN are 36.09nW, 64.970nW, 61.13nW, 33.31nW, 37.45nW, 32.5% optimization in power dissipation and 47% optimization in leakage current, 2.68uW, 1.98uW and 7.5% improvement in power consumption and 0.5% information loses compressed subsequently respectively. The basic gates and universal gates, CSA, subtraction, and MUX are integrated for 4-bit ALU design, and its delay, power consumption, and area are 0.104nsec, 314.4uW, and 56.8usqm respectively

High-Level Programming of Dynamically Reconfigurable NoC-Based Heterogeneous Multicore SoCs

2010 ◽  
pp. 186-219
Author(s):  
Wim Vanderbauwhede
Keyword(s):  
Cmos Technology ◽  
Design Reuse ◽  
Full Potential ◽  
Networks On Chip ◽  
Heterogeneous Multicore ◽  
Dynamically Reconfigurable ◽  
Ip Cores ◽  
And Performance ◽  
On Chip ◽  
High Level

With the increase in System-on-Chip (SoC) complexity and CMOS technology capabilities, the SoC design community has recently observed a convergence of a number of critical trends, all of them aimed at addressing the design gap: the advent of heterogeneous multicore SoCs and Networks-on-Chip and the recognition of the need for design reuse through Intellectual Property (IP) cores, for dynamic reconfigurability and for high abstraction-level design. In this chapter, we present a solution for High-level Programming of Dynamically Reconfigurable NoC-based Heterogeneous Multicore SoCs. Our solution, the Gannet framework, allows IP core-based Heterogeneous Multicore SoCs to be programmed using a high-level language whilst preserving the full potential for parallelism and dynamic reconfigurability inherent in such a system. The required hardware infrastructure is small and low-latency, thus adding full dynamic reconfiguration capabilities with a small overhead both in area and performance.

scholarly journals Differential Difference Current Conveyor Transconductance Amplifier: A New Analog Building Block for Signal Processing

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Neeta Pandey ◽  
Sajal K. Paul
Keyword(s):  
Signal Processing ◽  
Building Block ◽  
Current Mode ◽  
Cmos Technology ◽  
Current Conveyor ◽  
Pspice Simulations ◽  
Transconductance Amplifier ◽  
Multifunction Filter ◽  
And Performance ◽  
A Current

A new active building block for analog signal processing, namely, differential difference current conveyor transconductance amplifier (DDCCTA), is presented, and performance is checked through PSPICE simulations which show the usability of the proposed element is up to 201 MHz. The proposed block is implemented using 0.25 μm TSMC CMOS technology. Some of the applications are presented using the proposed DDCCTA, namely, a voltage mode multifunction filter, a current mode universal filter, an oscillator, current and voltage amplifiers, and grounded inductor simulator. The feasibility of DDCCTA and its applications is confirmed via PSPICE simulations.

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