scholarly journals Design and Performance Analysis of 4-bit Nano-processor Design for Low Area, Low Power and Minimum Delay Using 32nm FinFET Technology

2021 ◽  
Vol 12 ◽  
pp. 1-8
Author(s):  
Sujata A. A ◽  
Lalitha. Y. S
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Software Tool ◽  
Cmos Technology ◽  
Effective Control ◽  
Low Area ◽  
Area Reduction ◽  
And Performance ◽  
Artificial Neural Network Ann ◽  
Universal Gates

The recent technologies in VLSI Chips have grown in terms of scaling of transistor and device parameters but still, there is challenging task for controlling current between the source and drain terminals. For effective control of device current, the FinFET transistors have come into VLSI chip, through which current can be controlled effectively. This paper is to address the issues present in CMOS technology and majorly concentrated on the proposed 4-bit Nano processor using FinFET 32nm technology by using the Cadence Virtuoso software tool. In the proposed Nano processor, the first part is to design using 4bit ALU which includes all basic and universal gates, efficient and high-speed adder, multiplier, and multiplexer. The Carry Save Adder (CSA) and multiplier are the major subcomponents which can optimize the power consumption and area reduction. The second part of the proposed Nano processor is 4-bit 6T SRAM and Encoder and decoder and also Artificial Neural Network (ANN). All these subcomponents are designed at analog transistors (Schematic level) through which the Graphic Data System (GDS-II) is generated through mask layout design. Finally, the verification and validation are done using DRC and LVS, at the last chip-level circuit is generated for chip fabrication. The ALU is designed by using CMOS inverters and the designed ALU schematic is simulated through 32nm FinFET technological library and compared with CMOS technology which is simulated through 32nm CMOS library (without FinFET). The power consumption of AND, OR, XOR, NOT, NAND gates, SRAM, Encoder, Decoder and ANN are 36.09nW, 64.970nW, 61.13nW, 33.31nW, 37.45nW, 32.5% optimization in power dissipation and 47% optimization in leakage current, 2.68uW, 1.98uW and 7.5% improvement in power consumption and 0.5% information loses compressed subsequently respectively. The basic gates and universal gates, CSA, subtraction, and MUX are integrated for 4-bit ALU design, and its delay, power consumption, and area are 0.104nsec, 314.4uW, and 56.8usqm respectively

scholarly journals FinFET based Design and Performance Analysis of Nano-processor for Low Area, Low Power and Minimum Delay using 32nm

2021 ◽  
Vol 15 ◽  
pp. 690-699
Author(s):  
D Anil Kumar
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Software Tool ◽  
Cmos Technology ◽  
Effective Control ◽  
Low Area ◽  
Area Reduction ◽  
And Performance ◽  
Artificial Neural Network Ann ◽  
Universal Gates

The recent technologies in VLSI chips has grown in terms of scaling of transistor and device parameters but still there is a challenging task for controlling of current between source and drain terminals. For effective control of device current, the FinFET transistors have come into VLSI chip manufacturing, through which current can be effectively controlled. This section addresses the issues present in CMOS technology and majorly concentrated on proposed 4-bit Nano processor using FinFET 32nm technology by using Cadence Virtuoso software tool. In the proposed Nanoprocessor design, the first portion of the design is done using 4bit ALU which includes all basic and universal gates, high speed adder, multiplier and multiplexer. The Carry Save Adder (CSA) and multiplier are the major sub component which can optimize the power consumption and area reduction. The second portion of the proposed Nano processor design is 4-bit 6T SRAM and encoder and decoder and also using Artificial Neural Network (ANN). All these sub components are designed at analog transistors (Schematic level) through which the Graphic Data System (GDS-II) is generated through mask layout design. Finally, the verification and validation are done using DRC and LVS and at the last chip level circuit is generated for chip fabrication. The ALU is designed by using CMOS inverters and the designed ALU schematic is simulated through 32nm FinFET using technological library and compared with CMOS technology which is simulated through 32nm CMOS library (without FinFET). The power consumption of AND, OR, XOR, NOT, NAND gates, SRAM, Encoder, Decoder and ANN are 36.09nW, 64.970nW, 61.13nW, 33.31nW, 37.45nW, 32.5% with optimization in power dissipation of 47% along with optimization in leakage current, with 2.68uW, 1.98uW and 7.5% improvement in power consumption and 0.5% information loses are compressed subsequently respectively. The basic gates, universal gates, CSA, subtraction and MUX are integrated for 4-bit ALU design and its delay, power consumption and area are found to be 0.104nsec, 314.4uW and 56.8μsqm respectively.

DESIGN OF 64-BIT SQUARER BASED ON VEDIC MATHEMATICS

2014 ◽  
Vol 23 (07) ◽  
pp. 1450092 ◽  
Author(s):  
PRABIR SAHA ◽  
DEEPAK KUMAR ◽  
PARTHA BHATTACHARYYA ◽  
ANUP DANDAPAT
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Boolean Logic ◽  
Dynamic Power ◽  
Vedic Mathematics ◽  
Vedic Multiplier ◽  
Layout Area ◽  
And Performance

"Vedic mathematics" is the ancient methodology of mathematics which has a unique technique of calculations based on 16 "sutras" (formulae). A Vedic squarer design (ASIC) using such ancient mathematics is presented in this paper. By employing the Vedic mathematics, an (N × N) bit squarer implementation was transformed into just one small squarer (bit length ≪ N) and one adder which reduces the handling of the partial products significantly, owing to high speed operation. Propagation delay and dynamic power consumption of a squarer were minimized significantly through the reduction of partial products. The functionality of these circuits was checked and performance parameters like propagation delay and dynamic power consumption were calculated by spice spectre using 90-nm CMOS technology. The propagation delay of the proposed 64-bit squarer was ~ 16 ns and consumed ~ 6.79 mW power for a layout area of ~ 5.39 mm2. By combining Boolean logic with ancient Vedic mathematics, substantial amount of partial products were eliminated that resulted in ~ 12% speed improvement (propagation delay) and ~ 22% reduction in power compared with the mostly used Vedic multiplier (Nikhilam Navatascaramam Dasatah) architecture.

High Speed Min/Max Architecture Based on a Novel Comparator in 0.18-μm CMOS Process

2015 ◽  
Vol 24 (04) ◽  
pp. 1550048 ◽  
Author(s):  
Amir Fathi ◽  
Abdollah Khoei ◽  
Khayrollah Hadidi
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Current Mode ◽  
Cmos Technology ◽  
Operating Frequency ◽  
Cmos Process ◽  
Fuzzy Logic Controllers ◽  
Speed Performance ◽  
External Clock ◽  
Frequency Feature

This paper describes the design of a high speed min/max architecture based on a new current comparator. The main advantage of the proposed circuit which employs a novel preamplifier-latch comparator is the higher operating frequency feature in comparison with previous works. Because the comparator can work in voltage mode, the min/max structure can be redesigned either in voltage or current mode. The designed comparator is refreshed without any external clock. Therefore, it does not degrade the speed performance of proposed min/max structure. These features along with low power consumption qualify the proposed architecture to be widely used in high speed fuzzy logic controllers (FLCs). Post-layout simulation results confirm 3.4 GS/s comparison rate with 9-bit resolution for a 0.9 V peak-to-peak input signal range for the comparator and 800 MHz operating frequency for min/max circuit. The power consumption of whole structure is 912 μW from a 1.8 V power supply using TSMC 0.18-μm CMOS technology.

scholarly journals Energy Efficient SRAM

2019 ◽  
Vol 8 (9) ◽  
pp. 1086-1091
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Dynamic Logic ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Static Noise Margin ◽  
Noise Margin ◽  
And Performance ◽  
The Stability ◽  
Static Noise

Memories are an essential unit of any digital circuit, thus their power consumption must be considered during the designing process of the cells. To improve performance, reduce delay and increase stability, it is advisable to decrease the power consumed by the memory. Due to high demand of speed, high performance, there’s a need to decrease the size of the device, thereby increasing the devices placed per chip. This high integration makes chips more complex but improves device performance. Design of SRAM cells with speed and low power is crucial so as to replace DRAMs. The layout of SRAM has advanced to meet the requirements of the present industry in accordance with parameters like delay, power consumption and stability etc. This paper presents the aim of analyzing different technologies used to make SRAM more efficient in terms of parameters such as static noise margin, latency and dissipation of power. The stability investigation of SRAM cells are usually derived from the Static Noise Margin (SNM) analysis. Here we observe a SRAM design which has used dynamic logic and pass transistor logic. We further study the effects made on this design by employing various technologies such as AVL-S, AVL-G, AVL and MT-CMOS, at 180nm CMOS technology to achieve enhancements in delay, power consumption and performance. The proposed circuits are simulated and the results obtained have been analyzed to show significant improvement over conventional SRAM designs. Cadence Virtuoso simulation is used to confirm all the results obtained in this paper for the simulation of 180 nm CMOS technology SRAMs.

scholarly journals Multiplier Design and Performance Estimation with Distributed Arithmetic Algorithm

2016 ◽  
pp. 90-95
Author(s):  
M. Suhasini ◽  
K. Prabhu Kumar ◽  
P. Srinivas
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Performance Estimation ◽  
Switching Activity ◽  
Distributed Arithmetic ◽  
Hybrid Type ◽  
Arithmetic Algorithm ◽  
Overall Performance ◽  
Sign Extension ◽  
And Performance

A new architecture of multiplier-and-accumulator (MAC) for high-speed arithmetic. By combining multiplication with accumulation and devising a hybrid type of carry save adder (CSA), the performance was improved. Since the accumulator that has the largest delay in MAC was merged into CSA, the overall performance was elevated. The proposed CSA tree uses 1’scomplement- based radix-2 modified Booth’s algorithm (MBA) and has the modified array for the sign extension in order to increase the bit density of the operands. Moreover, depending on data switching activity statistically reduce the power consumption.

scholarly journals Testability Synthesis for Jumping Carry Adders

VLSI Design ◽  
2002 ◽  
Vol 14 (2) ◽  
pp. 155-169
Author(s):  
Chien-In Henry Chen ◽  
Mahesh Wagh
Keyword(s):  
High Speed ◽  
Design Method ◽  
Cmos Technology ◽  
Maximum Speed ◽  
Synthesis For Testability ◽  
Redundancy Removal ◽  
Area Reduction ◽  
Fundamental Relationship ◽  
Synthesis Strategy ◽  
Synthesis Methodology

Synthesis for testability ensures that the synthesized circuit is testable by exploring the fundamental relationship between don't care and redundancy. With the exploration of the relationship, redundancy removal can be applied to improve the testability, reduce the area and improve the speed of a synthesized circuit. The test generation problems have been adequately solved, therefore an innovative testability synthesis strategy is necessary for achieving the maximum fault coverage and area reduction for maximum speed. This paper presents a testability synthesis methodology applicable to a top–down design method based on the identification and removal of redundant faults. Emphasis has been placed on the testability synthesis of a high-speed binary jumping carry adder. A synthesized 32-bit testable adder implemented by a 1.2 μm CMOS technology performs addition in 4.09 ns. Comparing with the original synthesized circuit, redundancy removal yields a 100% testable design with a 15% improvement in speed and a 25% reduction in area.

scholarly journals Low-Power High-Speed Double Gate 1-bit Full Adder Cell

2016 ◽  
Vol 62 (4) ◽  
pp. 329-334 ◽  
Author(s):  
Raushan Kumar ◽  
Sahadev Roy ◽  
C.T. Bhunia
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Average Power ◽  
Full Adder ◽  
Cmos Technology ◽  
Spice Simulation ◽  
Pass Transistor ◽  
Voltage Swing

Abstract In this paper, we proposed an efficient full adder circuit using 16 transistors. The proposed high-speed adder circuit is able to operate at very low voltage and maintain the proper output voltage swing and also balance the power consumption and speed. Proposed design is based on CMOS mixed threshold voltage logic (MTVL) and implemented in 180nm CMOS technology. In the proposed technique the most time-consuming and power consuming XOR gates and multiplexer are designed using MTVL scheme. The maximum average power consumed by the proposed circuit is 6.94μW at 1.8V supply voltage and frequency of 500 MHz, which is less than other conventional methods. Power, delay, and area are optimized by using pass transistor logic and verified using the SPICE simulation tool at desired broad frequency range. It is also observed that the proposed design may be successfully utilized in many cases, especially whenever the lowest power consumption and delay are aimed.

DESIGN AND ANALYSIS OF A NOVEL LOW PDP FULL ADDER CELL

2011 ◽  
Vol 20 (03) ◽  
pp. 439-445 ◽  
Author(s):  
M. H. GHADIRY ◽  
ABU KHARI A'AIN ◽  
M. NADI S.
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Performance ◽  
Full Adder ◽  
Cmos Technology ◽  
Accurate Analysis ◽  
And Performance ◽  
Full Swing ◽  
Driving Capability

This paper, presents a new full-swing low power high performance full adder circuit in CMOS technology. It benefits from a full swing XOR-XNOR module with no feedback transistors, which decreases delay and power consumption. In addition, high driving capability of COUT module and low PDP design of SUM module contribute to more PDP reduction in cascaded mode. In order to have accurate analysis, the new circuit along with several well-known full adders from literature have been modeled and compared with CADENCE. Comparison consists of power consumption, performance, PDP, and area. Results show that there are improvements in both power consumption and performance. This design trades area with low PDP.

A Novel CNFET Technology Based 3 Bit Flash ADC for Low-Voltage High Speed SoC Application

2015 ◽  
Vol 19 ◽  
pp. 19-36 ◽  
Author(s):  
P.A. Gowri Sankar ◽  
G. Sathiyabama
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Circuit Design ◽  
Field Effect ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Flash Adc ◽  
Simulation Results

The continuous scaling down of metal-oxide-semiconductor field effect transistors (MOSFETs) led to the considerable impact in the analog-digital mixed signal integrated circuit design for system-on-chips (SoCs) application. SoCs trends force ADCs to be integrated on the chip with other digital circuits. These trends present new challenges in ADC circuit design based on existing CMOS technology. In this paper, we have designed and analyzed a 3-bit high speed, low-voltage and low-power flash ADC at 32nm CNFET technology for SoC applications. The proposed ADC utilizes the Threshold Inverter Quantization (TIQ) technique that uses two cascaded carbon nanotube field effect transistor (CNFET) inverters as a comparator. The TIQ technique proposed has been developed for better implementation in SoC applications. The performance of the proposed ADC is studied using two different types of encoders such as ROM and Fat tree encoders. The proposed ADCs circuits are simulated using Synopsys HSPICE with standard 32nm CNFET model at 0.9 input supply voltage. The simulation results show that the proposed 3 bit TIQ technique based flash ADC with fat tree encoder operates up to 8 giga samples per second (GSPS) with 35.88µW power consumption. From the simulation results, we observed that the proposed TIQ flash ADC achieves high speed, small size, low power consumption, and low voltage operation compared to other low power CMOS technology based flash ADCs. The proposed method is sensitive to process, temperature and power supply voltage variations and their impact on the ADC performance is also investigated.

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