A fault-tolerant design for a digital comparator based on nano-scale quantum-dotcellular automata

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Wenhua Huang ◽  
Juan Ren ◽  
Jinglong Jiang ◽  
J. Cheng
Keyword(s):  
Single Cell ◽  
Performance Metrics ◽  
Fault Tolerant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Logical Function ◽  
Switching Speed ◽  
Content Type ◽  
Nano Scale ◽  
Digital Comparator

Purpose Quantum-dot Cellular Automata (QCA) is a new nano-scale transistor-less computing model. To address the scaling limitations of complementary-metal-oxide-semiconductor technology, QCA seeks to produce general computation with better results in terms of size, switching speed, energy and fault-tolerant at the nano-scale. Currently, binary information is interpreted in this technology, relying on the distribution of the arrangement of electrons in chemical molecules. Using the coplanar topology in the design of a fault-tolerant digital comparator can improve the comparator’s performance. This paper aims to present the coplanar design of a fault-tolerant digital comparator based on the majority and inverter gate in the QCA. Design/methodology/approach As the digital comparator is one of the essential digital circuits, in the present study, a new fault-tolerant architecture is proposed for a digital comparator based on QCA. The proposed coplanar design is realized using coplanar inverters and majority gates. The QCADesigner 2.0.3 simulator is used to simulate the suggested new fault-tolerant coplanar digital comparator. Findings Four elements, including cell misalignment, cell missing, extra cell and cell dislocation, are evaluated and analyzed in QCADesigner 2.0.3. The outcomes of the study demonstrate that the logical function of the built circuit is accurate. In the presence of a single missed defect, this fault-tolerant digital comparator architecture will achieve 100% fault tolerance. Also, this comparator is above 90% fault-tolerant under single-cell displacement faults and is above 95% fault-tolerant under single-cell missing defects. Originality/value A novel structure for the fault-tolerant digital comparator in the QCA technology was proposed used by coplanar majority and inverter. Also, the performance metrics and obtained results establish that the coplanar design can be used in the QCA circuits to produce optimized and fault-tolerant circuits.

scholarly journals CMOS based Power Efficient Digital Comparator with Parallel Prefix Tree Structure

2018 ◽  
Vol 7 (2.7) ◽  
pp. 647
Author(s):  
J Lakshmi Prasanna ◽  
V Sahiti ◽  
E Raghuveera ◽  
M Ravi Kumar
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Tree Structure ◽  
Oxide Semiconductor ◽  
Least Significant Bit ◽  
Power Efficient ◽  
Prefix Tree ◽  
Digital Comparator ◽  
Parallel Prefix ◽  
Transmission Gates

A 128-Bit Digital Comparator is designed with Digital Complementary Metal Oxide Semiconductor (CMOS) logic, with the use of Parallel Prefix Tree Structure [1] technique. The comparison is performed on Most Significant Bit (MSB) to the Least Significant Bit (LSB). The comparison for the lower order bits carried out only when the MSBs are equal. This technique results in Optimized Power consumption and improved speed of operation. To make the circuit regular, the design is made using only CMOS logic gates. Transmission gates were used in the existing design and are replaced with the simple AND gates. This 128-Bit comparator is designed using Cadence TSMC 0.18µm technology and optimized the Power dissipation to 0.28mW and with a Delay of 0.87μs. 

scholarly journals Fault Modeling of Graphene Nanoribbon FET Logic Circuits

Electronics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 851 ◽  
Author(s):  
Gil-Tomàs ◽  
Gracia-Morán ◽  
Saiz-Adalid ◽  
Gil-Vicente
Keyword(s):  
Field Effect Transistor ◽  
Fault Tolerant ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Circuits ◽  
Graphene Nanoribbon ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Fault Models ◽  
New Materials ◽  
Effect Transistor

Due to the increasing defect rates in highly scaled complementary metal–oxide–semiconductor (CMOS) devices, and the emergence of alternative nanotechnology devices, reliability challenges are of growing importance. Understanding and controlling the fault mechanisms associated with new materials and structures for both transistors and interconnection is a key issue in novel nanodevices. The graphene nanoribbon field-effect transistor (GNR FET) has revealed itself as a promising technology to design emerging research logic circuits, because of its outstanding potential speed and power properties. This work presents a study of fault causes, mechanisms, and models at the device level, as well as their impact on logic circuits based on GNR FETs. From a literature review of fault causes and mechanisms, fault propagation was analyzed, and fault models were derived for device and logic circuit levels. This study may be helpful for the prevention of faults in the design process of graphene nanodevices. In addition, it can help in the design and evaluation of defect- and fault-tolerant nanoarchitectures based on graphene circuits. Results are compared with other emerging devices, such as carbon nanotube (CNT) FET and nanowire (NW) FET.

A new approach to bypass wire crossing problem in QCA nano technology

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ali Majeed ◽  
Esam Alkaldy
Keyword(s):  
Power Dissipation ◽  
Single Layer ◽  
Complementary Metal Oxide Semiconductor ◽  
Full Adder ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Nano Technology ◽  
New Approach ◽  
Content Type ◽  
Wire Crossing

Purpose This study aims to replace current multi-layer and coplanar wire crossing methods in QCA technology to avoid fabrication difficulties caused by them. Design/methodology/approach Quantum-dot cellular automata (QCA) is one of the newly emerging nanoelectronics technology tools that is proposed as a good replacement for complementary metal oxide semiconductor (CMOS) technology. This technology has many challenges, among them being component interconnection and signal routing. This paper will propose a new wire crossing method to enhance layout use in a single layer. The presented method depends on the central cell clock phase to enable two signals to cross over without interference. QCADesigner software is used to simulate a full adder circuit designed with the proposed wire crossing method to be used as a benchmark for further analysis of the presented wire crossing approach. QCAPro software is used for power dissipation analysis of the proposed adder. Findings A new cost function is presented in this paper to draw attention to the fabrication difficulties of the technology when designing QCA circuits. This function is applied to the selected benchmark circuit, and the results show good performance of the proposed method compared to others. The improvement is around 59, 33 and 75% compared to the best reported multi-layer wire crossing, coplanar wire crossing and logical crossing, respectively. The power dissipation analysis shows that the proposed method does not cause any extra power consumption in the circuit. Originality/value In this paper, a new approach is developed to bypass the wire crossing problem in the QCA technique.

Performance analysis of differential spin hall effect (DSHE)-MRAM-based logic gates

Circuit World ◽  
2019 ◽  
Vol 45 (4) ◽  
pp. 300-310
Author(s):  
Piyush Tankwal ◽  
Vikas Nehra ◽  
Sanjay Prajapati ◽  
Brajesh Kumar Kaushik
Keyword(s):  
Hall Effect ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Cmos Technology ◽  
Spin Transfer Torque ◽  
Spin Hall Effect ◽  
Oxide Semiconductor ◽  
Content Type

Purpose The purpose of this paper is to analyze and compare the characteristics of hybrid conventional complementary metal oxide semiconductor/magnetic tunnel junction (CMOS/MTJ) logic gates based on spin transfer torque (STT) and differential spin Hall effect (DSHE) magnetic random access memory (MRAM). Design/methodology/approach Spintronics technology can be used as an alternative to CMOS technology as it is having comparatively low power dissipation, non-volatility, high density and high endurance. MTJ is the basic spin based device that stores data in form of electron spin instead of charge. Two mechanisms, namely, STT and SHE, are used to switch the magnetization of MTJ. Findings It is observed that the power consumption in DSHE based logic gates is 95.6% less than the STT based gates. DSHE-based write circuit consumes only 5.28 fJ energy per bit. Originality/value This paper describes how the DSHE-MRAM is more effective for implementing logic circuits in comparison to STT-MRAM.

A novel design of nano router with high-speed crossbar scheduler for digital systems in QCA paradigm

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Kalpana Kasilingam ◽  
Paulchamy Balaiah
Keyword(s):  
High Speed ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Modern Technology ◽  
Oxide Semiconductor ◽  
Large Area ◽  
Content Type ◽  
Compact Size ◽  
High Power Consumption ◽  
High Speed Data

Purpose The nano-router would be a mastery device for providing high-speed data delivery. Here nano-router with a space-efficient crossbar scheduler is used for making absolutely less consumption in power. Design/methodology/approach In the emerging modern technology, every one of us is expecting a delivery of data at a high speed. To achieve high-speed delivery the authors are using the router. The router used here is at nanoscale reading which provides a compact size. Findings This can be implemented using the modern tools called Quantum-dot Cellular Automata (QCA) which is operated without the use of a transistor. As conventional complementary metal oxide semiconductor (CMOS) designs have some limitations such as low density, high power consumption and requirement of a large area. Research limitations/implications To overcome these limitations the QCA is used. It characterizes capability is used to substituting CMOS technology. The round-robin fashion is used in a high-speed space-efficient crossbar scheduler. Practical implications The simulation of the planned circuit with notional information established the practical identity of the scheme. Social implications The proposed nano router can be stimulated in the QCA environment using the QCADesigner tool and the power of the router can be calculated with the QCADesigner–E tool. Originality/value The proposed nano router can be stimulated in the QCA environment using the QCADesigner tool and the power of the router can be calculated with the QCADesigner–E tool. In this work, the performance of the router can be done in both the QCA environment and CMOS technology.

A 4:1 multiplexer using low-power high-speed domino technique for large fan-in gates using FinFET

Circuit World ◽  
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Sandeep Garg ◽  
Tarun Kumar Gupta
Keyword(s):  
Low Power ◽  
High Speed ◽  
Supply Voltage ◽  
Average Power ◽  
Complementary Metal Oxide Semiconductor ◽  
Propagation Delay ◽  
Oxide Semiconductor ◽  
Content Type ◽  
Maximum Delay ◽  
Average Power Consumption

Purpose This paper aims to propose a new fin field-effect transistor (FinFET)-based domino technique low-power series connected foot-driven transistors logic in 32 nm technology and examine its performance parameters by performing transient analysis. Design/methodology/approach In the proposed technique, the leakage current is reduced at footer node by a division of current to improve the performance of the circuit in terms of average power consumption, propagation delay and noise margin. Simulation of existing and proposed techniques are carried out in FinFET and complementary metal-oxide semiconductor technology at FinFET 32 nm technology for 2-, 4-, 8- and 16-input domino OR gates on a supply voltage of 0.9 V using HSPICE. Findings The proposed technique shows maximum power reduction of 77.74% in FinFET short gate (SG) mode in comparison with current-mirror-based process variation tolerant (CPVT) technique and maximum delay reduction of 51.34% in low power (LP) mode in comparison with CPVT technique at a frequency of 100 MHz. The unity noise gain of the proposed circuit is 1.10× to 1.54× higher in comparison with different existing techniques in FinFET SG mode and 1.11× to 1.71× higher in FinFET LP mode. The figure of merit of the proposed circuit is up to 15.77× higher in comparison with existing domino techniques. Originality/value The research proposes a new FinFET-based domino technique and shows improvement in power, delay, area and noise performance. The proposed design can be used for implementing high-speed digital circuits such as microprocessors and memories.

Efficient techniques of fractional-N PLL for pervasive wireless applications

2022 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Azeem Mohammed Abdul ◽  
Usha Rani Nelakuditi
Keyword(s):  
Phase Noise ◽  
Low Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Locked Loop ◽  
Oxide Semiconductor ◽  
Wireless Devices ◽  
Phase Frequency Detector ◽  
Content Type ◽  
Wireless Applications ◽  
Frequency Detector

Purpose The purpose of this paper to ensure the rapid developments in the radio frequency wireless technology, the synthesis of frequencies for pervasive wireless applications is crucial by implementing the design of low voltage and low power Fractional-N phase locked loop (PLL) for controlling medical devices to monitor remotely patients. Design/methodology/approach The developments urge a technique reliable to phase noise in designing fractional-N PLL with a new eight transistor phase frequency detector and a good linearized charge pump (CP) for speed of operation with minimum mismatches. Findings In applications for portable wireless devices, by proposing a new phase-frequency detector with the removal of dead, blind zones and a modified CP to minimize the mismatch of currents. Originality/value The results are simulated in 45 nm complementary metal oxide semiconductor generic process design kit (GPDK) technology in cadence virtuoso. The phase noise of the proposed Fractiona-N phase locked loop has–93.18, –101.4 and –117 dBc/Hz at 10 kHz, 100 kHz and 1 MHz frequency offsets, respectively, and consumes 3.3 mW from a 0.45 V supply.

Memristive combinational logic circuits and stochastic computing implementation scheme

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Tianshu Li ◽  
Shukai Duan ◽  
Jun Liu ◽  
Lidan Wang
Keyword(s):  
Response Time ◽  
Fault Tolerant ◽  
Computing System ◽  
Oxide Semiconductor ◽  
Cmos Circuits ◽  
Combinational Logic ◽  
Content Type ◽  
Stochastic Computing ◽  
Memristive System ◽  
Implementation Scheme

Purpose Stochastic computing which is an alternative method of the binary calculation has key merits such as fault-tolerant capability and low hardware cost. However, the hardware response time of it is required to be very fast due to its bit-wise calculation mode. While the complementary metal oxide semiconductor (CMOS) components are difficult to meet the requirements aforementioned. For this, the stochastic computing implementation scheme based on the memristive system is proposed to reduce the response time. The purpose of this paper is to provide the implementation scheme based memristive system for the stochastic computing. Design/methodology/approach The hardware structure of material logic based on the memristive system is realized according to the advantages of the memristor. After that, the scheme of NOT logic, AND logic and multiplexer are designed, which are the basic units of stochastic computing. Furthermore, a stochastic computing system based on memristive combinational logic is structured and its validity is verified successfully by operating a case. Findings The numbers of the elements of the proposed stochastic computing system are less than the conventional stochastic computing based on CMOS circuits. Originality/value The paper proposed a novel implementation scheme for stochastic computing based on the memristive systems, which are different from the conventional stochastic computing based on CMOS circuits.

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