scholarly journals Low Voltage Electrostatic Actuation and Displacement Measurement Through Resonant Drive Circuit

2012 ◽  
Author(s):  
Sangtak Park ◽  
Eihab Abdel-Rahman
Keyword(s):  
Measurement Method ◽  
Low Voltage ◽  
Supply Voltage ◽  
Numerical Models ◽  
Actuation Voltage ◽  
Input Voltage ◽  
Electrostatic Actuators ◽  
Mems Technology ◽  
Drive Circuit ◽  
The Impact

Most electrostatic actuators fabricated by MEMS technology require high actuation voltage and suffer from the pull-in phenomenon that limits the operation range. We present an amplitude-modulated resonant drive circuit to drive electrostatic actuators at much lower supply voltage than that of conventional actuators to extend their operation range. Analytical and numerical models facilitate stability analysis of electrostatic actuators coupled with the resonant drive circuit. We study the impact of parasitic capacitance and the quality factor of the resonant drive circuit on the operation range of electrostatic actuators. Furthermore, we present a new method to measure the displacement of electrostatic actuators by sensing the phase delay of the actuation voltage with respect to the input voltage. This measurement method allows us to easily incorporate feedback control into existing electrostatic actuators without any modification to the actuator itself.

Implementation of Single-Phase Two-Switch Midpoint Unidirectional Multilevel Converter System

2018 ◽  
Vol 19 (4) ◽  
Author(s):  
Peethala Rajiv Roy ◽  
P. Parthiban ◽  
B. Chitti Babu
Keyword(s):  
Single Phase ◽  
Pulse Width Modulation ◽  
Low Voltage ◽  
Supply Voltage ◽  
Harmonic Distortion ◽  
Input Voltage ◽  
Open Loop ◽  
Current Control ◽  
Control Technique ◽  
Control Scheme

Abstract This paper deals with implementation of a single-phase three level converter system under low voltage condition. The frequency of the switches is made constant and involves change in ${t_{on}}$ and ${t_{off}}$ duration. For this condition the pulse width modulation control scheme for a single phase three level rectifier is developed to improve the power quality. The hysteresis current control technique is adopted to bring forth three-level PWM on the dc side of the bridge rectifier and to achieve high power factor and low harmonic distortion. Based on the proposed control scheme, the line current is driven to follow the sinusoidal current command which is in phase with the supply voltage. By using three-level voltage pattern the blocking voltage of each power device is clamped to half of the dc link voltage. The simulation and experimental results of 20W converter under low input voltage condition are shown to verify the circuit performance. Open loop simulation and hardware tests are implemented by applying a low voltage of 15 V(rms) on the input side.

Integrated Bandgap Voltage Reference for High Voltage Vehicle Applications

2015 ◽  
Vol 24 (08) ◽  
pp. 1550125 ◽  
Author(s):  
Sergio Saponara
Keyword(s):  
High Voltage ◽  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Power Supply Rejection Ratio ◽  
Compact Size ◽  
Electrical Vehicles ◽  
Bandgap Voltage Reference

This work presents a bandgap voltage reference (BGR) integrated in 0.25-μm bipolar-CMOS-DMOS (BCD) technology. The BGR circuit generates a reference voltage of 1.22 V. It is able to withstand large supply voltage variations of vehicle applications from 4.5 V, e.g., in case of cranking, up to 60-V, maximum value in case of emerging 48-V battery systems for hybrid and electrical vehicles. The circuit has an embedded high-voltage (HV) pseudo-regulator block that provides a more stable internal supply rail for a cascaded low-voltage bandgap core. HV MOS are used only in the pre-regulator block thus allowing the design of a BGR with compact size. The proposed architecture permits to withstand large input voltage variations with a temperature drift of a hundred of ppm/°C, a line regulation (LR) of few mV/V versus the external supply voltage and a power supply rejection ratio (PSRR) higher than 90 dB.

scholarly journals Ultra-Low-Voltage Inverter-Based Operational Transconductance Amplifiers with Voltage Gain Enhancement by Improved Composite Transistors

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1410
Author(s):  
Luis Henrique Rodovalho ◽  
Orazio Aiello ◽  
Cesar Ramos Rodrigues
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Voltage Gain ◽  
Design Environment ◽  
Operational Transconductance Amplifiers ◽  
Gain Enhancement ◽  
Transconductance Amplifiers ◽  
Forward Body Bias ◽  
The Cost ◽  
The Impact

This paper proposes topological enhancements to increase voltage gain of ultra-low-voltage (ULV) inverter-based OTAs. The two proposed improvements rely on adoption of composite transistors and forward-body-biasing. The impact of the proposed techniques on performance figures is demonstrated through simulations of two OTAs. The first OTA achieves a 39 dB voltage gain, with a power consumption of 600 pW and an active area of 447 μm2. The latter allies the forward-body-bias approach with the benefit of the independently biased composite transistors. By combining both solutions, voltage gain is raised to 51 dB, consuming less power (500 pW) at the cost of an increased area of 727 μm2. The validation has been performed through post-layout simulations with the Cadence Analog Design Environment and the TSMC 180 nm design kit, with the supply voltage ranging from 0.3 V to 0.6 V.

130 nm CMOS Bulk-Driven Variable Gain Amplifier for Low-Voltage Applications

2017 ◽  
Vol 26 (08) ◽  
pp. 1740003 ◽  
Author(s):  
Daniel Arbet ◽  
Viera Stopjaková ◽  
Martin Kováč ◽  
Lukáš Nagy ◽  
Matej Rakús ◽  
...  
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Cmos Technology ◽  
Variable Gain Amplifier ◽  
Voltage Range ◽  
Variable Gain ◽  
Wide Scale ◽  
Simulation Results ◽  
Low Supply Voltage

In this paper, a variable gain amplifier (VGA) designed in 130 nm CMOS technology is presented. The proposed amplifier is based on the bulk-driven (BD) design approach, which brings a possibility to operate with low supply voltage. Since the supply voltage of only 0.6 V is used for the amplifier to operate, there is no risk of latch-up event that usually represents the main drawback of the BD circuit systems. BD transistors are employed in the input differential stage, which makes it possible to operate in rail-to-rail input voltage range. Achieved simulation results indicate that gain of the proposed VGA can be varied in a wide scale, which together with the low supply voltage feature make the proposed amplifier useful for low-voltage and low-power applications. An additional circuit responsible for maintaining the linear-in-decibel gain dependency of the VGA is also addressed. The proposed circuit block avails arbitrary shaping of the curve characterizing the gain versus the controlling voltage dependency.

Stabilization of Electrostatic Actuators Through Variable Gain Amplifier

2012 ◽  
Author(s):  
Sangtak Park ◽  
Eihab Abdel-Rahman
Keyword(s):  
Feedback Loop ◽  
Bottom Electrode ◽  
Input Voltage ◽  
Parasitic Capacitance ◽  
Variable Gain Amplifier ◽  
Voltage Gain ◽  
Electrostatic Actuator ◽  
Electrostatic Actuators ◽  
Variable Gain ◽  
Drive Circuit

In the presence of high parasitic capacitance, conventional electrostatic actuation methods fail to drive an electrostatic actuator beyond its pull-in point. Although the resonant drive circuit is able to extend the operation range of an electrostatic actuator further at a much lower input voltage, an electrostatic actuator coupled with the resonant drive circuit also undergoes pull-in in the presence of high parasitic capacitance compared to the circuit’s quality factor. To improve its robustness to high parasitic capacitance, we design a variable gain amplifier that reduces voltage gain as an electrostatic actuator moves towards its bottom electrode: the increase in the impedance of the resonant drive circuit reduces voltage gain of a variable gain amplifier through its positive feedback loop, while its negative feedback stabilizes its operation.

scholarly journals TIQ Flash ADC Design using a Low Power Multiplier Based Encoder

2019 ◽  
Vol 8 (2S2) ◽  
pp. 226-229
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Low Voltage ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Large Power ◽  
Flash Adc ◽  
Analog To Digital ◽  
Tiq Comparator ◽  
The Impact

Threshold Inverter Quantization (TIQ) for applications of system-on-chip (SoC) depending on CMOS flash analog-to-digital converter (ADC). The TIQ technique which uses two cascaded CMOS inverters as a voltage comparator. However, this TIQ method must be created to meet the latest SoC trends, which force ADCs to be integrated with another electronic circuit on the chip and focus on low-power and low-voltage applications. TIQ comparator reduced the impact of variations in the process, temperature, and power supply voltage. Therefore, we obtained a higher TIQ flash ADC speed and resolution. TIQ flash ADC reduced / managed power dissipation. We obtain large power savings by managing the power dissipation in the comparator. Furthermore, the new comparator has a huge benefit in power dissipation and noise rejection comparative to the TIQ comparator [1]. The findings indicate that the TIQ flash ADC based on Modied mux attain heavy-speed transformation and has a tiny size, low-power dissipation and operation of lowvoltage compared to another flash ADCs.

A Low-Voltage Low-Power Resistor-Based Current Mirror and Its Applications

2017 ◽  
Vol 26 (11) ◽  
pp. 1750180 ◽  
Author(s):  
Leila Safari ◽  
Shahram Minaei
Keyword(s):  
Output Voltage ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Cmos Technology ◽  
Current Mirror ◽  
Output Impedance ◽  
High Cmrr ◽  
High Output Impedance

In this paper, a CMOS resistor-based current mirror (RBCM) aimed to be used in low-voltage applications is presented. The main features of the proposed current mirror are very low input voltage requirement (a few mV), low output voltage requirement, high output impedance and simple circuitry. The core structure of the proposed RBCM consists of three transistors (excluding bias circuitry) and two low value grounded resistors. The proposed circuit alleviates the need for cascode structures which are conventionally used to boost the output impedance and linearity. SPICE simulations using 0.18[Formula: see text][Formula: see text]m CMOS technology parameters under supply voltage of 0.9[Formula: see text]V are reported which show input and output voltage requirements of 40[Formula: see text]mV and 0.1[Formula: see text]V respectively, low THD of 1.2%, [Formula: see text] of 496[Formula: see text][Formula: see text], [Formula: see text] of 1[Formula: see text]M[Formula: see text], [Formula: see text]3[Formula: see text]dB bandwidth of 181[Formula: see text]MHz and power dissipation of 154[Formula: see text][Formula: see text]W. A high CMRR differential amplifier and a high performance current difference circuit as applications of the proposed RBCM are given. The proposed RBCM is very useful in tackling restrictions of modern technologies such as reduced supply voltage and transistors low intrinsic output impedance.

scholarly journals An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 267 ◽  
Author(s):  
Chikako Sano ◽  
Manabu Ataka ◽  
Gen Hashiguchi ◽  
Hiroshi Toshiyoshi
Keyword(s):  
Sound Pressure ◽  
Low Voltage ◽  
Input Voltage ◽  
Plane Motion ◽  
Silicon On Insulator ◽  
Electrostatic Actuators ◽  
Microelectromechanical System ◽  
Acoustic Transducer ◽  
Out Of Plane ◽  
Dc Bias

Despite the development of energy-efficient devices in various applications, microelectromechanical system (MEMS) electrostatic actuators yet require high voltages to generate large displacements. In this respect, electrets exhibiting quasi-permanent electrical charges allow large fixed voltages to be integrated directly within electrode structures to reduce or eliminate the need of DC bias electronics. For verification, a − 40   V biased electret layer was fabricated at the inner surface of a silicon on insulator (SOI) structure facing a 2 μm gap owing to the high compatibility of silicon micromachining and the potassium-ion-electret fabrication method. A − 10   V electret-augmented actuator with an out-of-plane motion membrane reached a sound pressure level (SPL) of 50 dB maximum with AC input voltage of V i n = 5   V pp alone, indicating a potential for acoustic transducer usage such as microspeakers. Such devices with electret biasing require only the input signal voltage, thus contributing to reducing the overall power consumption of the device system.

scholarly journals Self-Biased and Supply-Voltage Scalable Inverter-Based Operational Transconductance Amplifier with Improved Composite Transistors

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 935
Author(s):  
Luis Henrique Rodovalho ◽  
Cesar Ramos Rodrigues ◽  
Orazio Aiello
Keyword(s):  
Power Consumption ◽  
Power Efficiency ◽  
Low Voltage ◽  
Supply Voltage ◽  
Voltage Gain ◽  
Gain Bandwidth ◽  
Operational Transconductance Amplifiers ◽  
Transconductance Amplifier ◽  
Technology Process ◽  
The Impact

This paper deals with a single-stage single-ended inverter-based Operational Transconductance Amplifiers (OTA) with improved composite transistors for ultra-low-voltage supplies, while maintaining a small-area, high power-efficiency and low output signal distortion. The improved composite transistor is a combination of the conventional composite transistor and forward-body-biasing to further increase voltage gain. The impact of the proposed technique on performance is demonstrated through post-layout simulations referring to the TSMC 180 nm technology process. The proposed OTA achieves 54 dB differential voltage gain, 210 Hz gain–bandwidth product for a 10 pF capacitive load, with a power consumption of 273 pW with a 0.3 V power supply, and occupies an area of 1026 μm2. For a 0.6 V voltage supply, the proposed OTA improves its voltage gain to 73 dB, and achieves a 15 kHz gain–bandwidth product with a power consumption of 41 nW.

Performance analysis of multi-scaling voltage level shifter for low-power applications

2020 ◽  
Vol 17 (6) ◽  
pp. 803-809
Author(s):  
Vaithiyanathan D. ◽  
Megha Singh Kurmi ◽  
Alok Kumar Mishra ◽  
Britto Pari J.
Keyword(s):  
Low Power ◽  
Output Voltage ◽  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Level ◽  
Content Type ◽  
Level Shifter

Purpose In complementary metal-oxide-semiconductor (CMOS) logic circuits, there is a direct square proportion of supply voltage on dynamic power. If the supply voltage is high, then more amount of energy will be consumed. Therefore, if a low voltage supply is used, then dynamic power will also be reduced. In a mixed signal circuit, there can be a situation when lower voltage circuitry has to drive large voltage circuitry. In such a case, P-type metal-oxide-semiconductor of high-voltage circuitry may not be switched off completely by applying a low voltage as input. Therefore, there is a need for level shifter where low-voltage and high-voltage circuits are connected. In this paper the multi-scaling voltage level shifter is presented which overcomes the contention problems and suitable for low-power applications. Design/methodology/approach The voltage level shifter circuit is essential for digital and analog circuits in the on-chip integrated circuits. The modified voltage level shifter and reported energy-efficient voltage level shifter have been optimally designed to be functional in all process voltage and temperature corners for VDDH = 5V, VDDL = 2V and the input frequency of 5 MHz. The modified voltage level shifter and reported shifter circuits are implemented using Cadence Virtuoso at 90 nm CMOS technology and the comparison is made based on speed and power consumed by the circuit. Findings The voltage level shifter circuit discussed in this paper removes the contention problem that is present in conventional voltage level shifter. Moreover, it has the capability for up and down conversion and reduced power and delay as compared to conventional voltage level shifter. The efficiency of the circuit is improved in two ways, first, the current of the pull-up device is reduced and second, the strength of the pull-down device is increased. Originality/value The modified level shifter is faster for switching low input voltage to high output voltage and also high input voltage to low output voltage. The average power consumption for the multi-scaling voltage level shifter is 259.445 µW. The power consumption is very less in this technique and it is best suitable for low-power applications.

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