scholarly journals Metal oxide semiconductor nanomembrane–based soft unnoticeable multifunctional electronics for wearable human-machine interfaces

2019 ◽  
Vol 5 (8) ◽  
pp. eaav9653 ◽  
Author(s):  
Kyoseung Sim ◽  
Zhoulyu Rao ◽  
Zhanan Zou ◽  
Faheem Ershad ◽  
Jianming Lei ◽  
...  
Keyword(s):  
Data Storage ◽  
Response Times ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Body Motion ◽  
Oxide Semiconductor ◽  
Stretchable Electronics ◽  
Human Machine Interfaces

Wearable human-machine interfaces (HMIs) are an important class of devices that enable human and machine interaction and teaming. Recent advances in electronics, materials, and mechanical designs have offered avenues toward wearable HMI devices. However, existing wearable HMI devices are uncomfortable to use and restrict the human body’s motion, show slow response times, or are challenging to realize with multiple functions. Here, we report sol-gel-on-polymer–processed indium zinc oxide semiconductor nanomembrane–based ultrathin stretchable electronics with advantages of multifunctionality, simple manufacturing, imperceptible wearing, and robust interfacing. Multifunctional wearable HMI devices range from resistive random-access memory for data storage to field-effect transistors for interfacing and switching circuits, to various sensors for health and body motion sensing, and to microheaters for temperature delivery. The HMI devices can be not only seamlessly worn by humans but also implemented as prosthetic skin for robotics, which offer intelligent feedback, resulting in a closed-loop HMI system.

scholarly journals Nanostructure Analysis of Sol-gel PZT Thin Films Derived from Different Chemical Routes

2009 ◽  
Vol 15 (S3) ◽  
pp. 53-54
Author(s):  
Aiying Wu ◽  
P. M. Vilarinho
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Chemical Reactivity ◽  
Sol Gel ◽  
Random Access ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Metal Alkoxides ◽  
Pzt Thin Films ◽  
Wide Range

AbstractLead zirconate - lead titanate (PZT) materials are commercially important piezoelectric and ferroelectrics in a wide range of applications, such as data storage (dynamic access and ferroelectric random access memories) and sensing and actuating devices. PZT with the morphotropic phase boundary composition offers the highest piezoelectric response and at the present there are no fullydeveloped alternative materials to PZT. The importance of PZT associated with the continuous requirements of device miniaturization, imposes the development of high quality PZT thin films with optimized properties. Concomitantly due to the dependence of the final properties of thin films on the details of the microstructure a thoroughly analysis at the local scale of their microstructure is necessary. Sol-gel method, is one of the Chemical Solution Deposition techniques used to prepare oxide thin films, such as PZT. Starting from a solution, a solid network is progressively formed via inorganic polymerisation reactions. Most metal alkoxides used for sol-gel synthesis are highly reactive towards hydrolysis and condensation. Therefore their chemical reactivity has to be tailored via the chemical modification (or complexation) of metal alkoxides to avoid uncontrolled reactions and precipitation. For PZT sol gel thin film preparation, two chemical routes are frequently used depending on the nature of the molecular precursor, namely methotoxyethanol (MOE) route and diol-route.

THE FIRST PRINCIPLE STUDY OF COMPARISON OF DIVALENT AND TRIVALENT IMPURITY IN RRAM DEVICES USING GGA+U

2021 ◽  
pp. 2150039
Author(s):  
EJAZ AHMAD KHERA ◽  
HAFEEZ ULLAH ◽  
MUHAMMAD IMRAN ◽  
HASSAN ALGADI ◽  
FAYYAZ HUSSAIN ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Full Potential ◽  
Generalized Gradient ◽  
Augmented Plane Wave ◽  
Generalized Gradient Approximation ◽  
Metal Insulator Metal ◽  
Structure Density ◽  
Linearized Augmented Plane Wave

Resistive switching (RS) performances had prodigious attention due to their auspicious potential for data storage. Oxide-based devices with metal insulator metal (MIM) structure are more valuable for RS applications. In this study, we have studied the effect of divalent (nickel) as well as trivalent (aluminum) dopant without and with oxygen vacancy (V[Formula: see text] in hafnia (HfO[Formula: see text]-based resistive random-access memory (RRAM) devices. All calculations are carried out within the full potential linearized augmented plane-wave (FP-LAPW) method based on the WIEN2k code by using generalized gradient approximation (GGA) and generalized gradient approximation with U Hubbard parameters (GGA+U) approach. The studies of the band structure, density of states and charge density reveal that HfNiO2+Vo are more appropriate dopant to enhance the conductivity for RRAM devices.

scholarly journals Flexible Electronics: Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage (Small 3/2016)

Small ◽  
2016 ◽  
Vol 12 (3) ◽  
pp. 265-265 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Flexible Electronics ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO2 RRAM

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 947 ◽  
Author(s):  
Seunghyun Ha ◽  
Hyunjae Lee ◽  
Won-Yong Lee ◽  
Bongho Jang ◽  
Hyuk-Jun Kwon ◽  
...  
Keyword(s):  
Sol Gel ◽  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Environment Effect ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Retention Characteristics ◽  
Resistance State

We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 104 s without any significant degradation.

Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.

2011 ◽  
Vol 1337 ◽  
Author(s):  
K. Kinoshita ◽  
T. Yoda ◽  
S. Kishida
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Large Radius ◽  
Memory Retention ◽  
Conductive Atomic Force Microscopy ◽  
Resistance Change ◽  
Atomic Force ◽  
Change Effect ◽  
Retention Characteristics

ABSTRACTConductive atomic-force microscopy (C-AFM) writing is attracting attention as a technique for clarifying the switching mechanism of resistive random-access memory (ReRAM) by providing a wide area filled with filaments, which can be regarded as one filament with large radius. We observed a C-AFM writing area of NiO films using SEM, and revealed a correlation between the contrast in a secondary electron image (SEI) and the resistance written by C-AFM. In addition, the dependence of the SEI contrast on the beam accelerating voltage (Vaccel) suggests that the resistance-change effect occurs near the surface of the NiO film. As for the effect of electron irradiation on the C-AFM writing area, it was shown that the resistance change effect was caused by exchanging oxygen with the atmosphere at the surface of the NiO film. This result suggests that the low resistance and high resistance areas are, respectively, p-type Ni1+δO (δ< 0) and insulating (stoichiometric) or n-type Ni1+δO (δ ≥0).

INVESTIGATION OF ZrxLa1-xOy NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

2012 ◽  
Vol 26 (31) ◽  
pp. 1250191 ◽  
Author(s):  
ALI BAHARI ◽  
REZA GHOLIPUR
Keyword(s):  
Electron Microscopy ◽  
Metal Oxide ◽  
Current Density ◽  
Nonvolatile Memory ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nonvolatile Memory Devices

To investigate characterization of Zr x La 1-x O y nanocrystallites as a buffer oxide in forming the metal-oxide-semiconductor field effect transistors (MOSFETs) structure, we synthesized Zr x La 1-x O y nanocrystallites by sol–gel method. Moreover, from the solution prepared, thin films on silicon wafer substrates have been realized by "dip-coating" with a pulling out speed of 5 cm min -1. The structure, morphology, electrical properties of thin film was examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) techniques. Electrical property characterization was performed with metal-oxide-semiconductor (MOS) structures through capacitance–voltage (C–V) and current density–voltage (J–V) measurements. The leakage current density was below 1.0 ×10-6 A/cm 2 at 1 MV/cm.

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