scholarly journals A novel graphene pressure sensor with zig–zag shaped piezoresistors for maximum strain coverage for enhancing the sensitivity of the pressure sensor

Author(s):  
Meetu Nag ◽  
Ajay Kumar ◽  
Bhanu Pratap

The demand for flexible and wearable sensors is increasing day by day due to varied applications in the biomedical field. Especially highly sensitive sensors are required for the detection of the low signal from the body. It is important to develop a pressure sensor that can convert the maximum input signal into the electrical output. In this paper, the design and performance of graphene piezoresistive pressure sensors have been investigated by zig–zag piezoresistors on the square diaphragm. On the applied pressure, deformation is sensed by the piezoresistors above the diaphragm. Finite element analysis is carried out to investigate the effect of zig–zag piezoresistors on the square diaphragm. Simulated results for the optimized design are obtained for an operating range of 0–100 psi for pressure sensitivity.

2012 ◽  
Vol 27 (02) ◽  
pp. 1350011 ◽  
Author(s):  
ZHAOHUA ZHANG ◽  
TIANLING REN ◽  
RUIRUI HAN ◽  
LI YUAN ◽  
BO PANG

It is important to realize good consistency among different device units on a big wafer. The bad product consistency results from the processing deviation which is hard to control. A novel simulation method to control and reduce the influence of processing deviation on the sensitivity of a piezoresistive pressure sensor is provided in this paper. Based on finite element analysis (FEA) and mathematical integration, the performance of the pressure sensors is simulated. The pressure sensors are designed and fabricated according to the simulation results. The test results confirm that this simulation method can help to design the pressure sensor very precisely. From the simulation and test results, we find that properly enlarging the size of the square silicon membrane can improve the devices consistency.


2020 ◽  
Vol 8 (4) ◽  
pp. 296-307
Author(s):  
Konstantin Krestovnikov ◽  
Aleksei Erashov ◽  
Аleksandr Bykov

This paper presents development of pressure sensor array with capacitance-type unit sensors, with scalable number of cells. Different assemblies of unit pressure sensors and their arrays were considered, their characteristics and fabrication methods were investigated. The structure of primary pressure transducer (PPT) array was presented; its operating principle of array was illustrated, calculated reference ratios were derived. The interface circuit, allowing to transform the changes in the primary transducer capacitance into voltage level variations, was proposed. A prototype sensor was implemented; the dependency of output signal power from the applied force was empirically obtained. In the range under 30 N it exhibited a linear pattern. The sensitivity of the array cells to the applied pressure is in the range 134.56..160.35. The measured drift of the output signals from the array cells after 10,000 loading cycles was 1.39%. For developed prototype of the pressure sensor array, based on the experimental data, the average signal-to-noise ratio over the cells was calculated, and equaled 63.47 dB. The proposed prototype was fabricated of easily available materials. It is relatively inexpensive and requires no fine-tuning of each individual cell. Capacitance-type operation type, compared to piezoresistive one, ensures greater stability of the output signal. The scalability and adjustability of cell parameters are achieved with layered sensor structure. The pressure sensor array, presented in this paper, can be utilized in various robotic systems.


2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.


2009 ◽  
Vol 74 ◽  
pp. 149-152
Author(s):  
X.M. Zhang ◽  
M. Yu ◽  
Silas Nesson ◽  
H. Bae ◽  
A. Christian ◽  
...  

This paper reports the development of a miniature pressure sensor on the optical fiber tip for in vitro measurements of rodent intradiscal pressure. The sensor element is biocompatible and can be fabricated by simple, batch-fabrication methods in a non-cleanroom environment with good device-to-device uniformity. The fabricated sensor element has an outer diameter of only 366 μm, which is small enough to be inserted into the rodent discs without disrupting the structure or altering the intradiscal pressures. In the calibration, the sensor element exhibits a linear response to the applied pressure over the range of 0 - 70 kPa, with a sensitivity of 0.0206 μm/kPa and a resolution of 0.17 kPa.


1999 ◽  
Author(s):  
Todd F. Miller ◽  
David J. Monk ◽  
Gary O’Brien ◽  
William P. Eaton ◽  
James H. Smith

Abstract Surface micromachining is becoming increasingly popular for microelectromechanical systems (MEMS) and a new application for this process technology is pressure sensors. Uncompensated surface micromachined piezoresistive pressure sensors were fabricated by Sandia National Labs (SNL). Motorola packaged and tested the sensors over pressure, temperature and in a typical circuit application for noise characteristics. A brief overview of surface micromachining related to pressure sensors is described in the report along with the packaging and testing techniques used. The electrical data found is presented in a comparative manner between the surface micromachined SNL piezoresistive polysilicon pressure sensor and a bulk micromachined Motorola piezoresistive single crystal silicon pressure sensor.


2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.


Polymers ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 1412 ◽  
Author(s):  
Young Jung ◽  
Wookjin Lee ◽  
Kyungkuk Jung ◽  
Byunggeon Park ◽  
Jinhyoung Park ◽  
...  

In recent times, polymer-based flexible pressure sensors have been attracting a lot of attention because of their various applications. A highly sensitive and flexible sensor is suggested, capable of being attached to the human body, based on a three-dimensional dielectric elastomeric structure of polydimethylsiloxane (PDMS) and microsphere composite. This sensor has maximal porosity due to macropores created by sacrificial layer grains and micropores generated by microspheres pre-mixed with PDMS, allowing it to operate at a wider pressure range (~150 kPa) while maintaining a sensitivity (of 0.124 kPa−1 in a range of 0~15 kPa) better than in previous studies. The maximized pores can cause deformation in the structure, allowing for the detection of small changes in pressure. In addition to exhibiting a fast rise time (~167 ms) and fall time (~117 ms), as well as excellent reproducibility, the fabricated pressure sensor exhibits reliability in its response to repeated mechanical stimuli (2.5 kPa, 1000 cycles). As an application, we develop a wearable device for monitoring repeated tiny motions, such as the pulse on the human neck and swallowing at the Adam’s apple. This sensory device is also used to detect movements in the index finger and to monitor an insole system in real-time.


Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.


Nano Letters ◽  
2018 ◽  
Vol 18 (6) ◽  
pp. 3738-3745 ◽  
Author(s):  
Stefan Wagner ◽  
Chanyoung Yim ◽  
Niall McEvoy ◽  
Satender Kataria ◽  
Volkan Yokaribas ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 496 ◽  
Author(s):  
Xi Zhou ◽  
Yongna Zhang ◽  
Jun Yang ◽  
Jialu Li ◽  
Shi Luo ◽  
...  

Wearable pressure sensors have attracted widespread attention in recent years because of their great potential in human healthcare applications such as physiological signals monitoring. A desirable pressure sensor should possess the advantages of high sensitivity, a simple manufacturing process, and good stability. Here, we present a highly sensitive, simply fabricated wearable resistive pressure sensor based on three-dimensional microstructured carbon nanowalls (CNWs) embedded in a polydimethylsiloxane (PDMS) substrate. The method of using unpolished silicon wafers as templates provides an easy approach to fabricate the irregular microstructure of CNWs/PDMS electrodes, which plays a significant role in increasing the sensitivity and stability of resistive pressure sensors. The sensitivity of the CNWs/PDMS pressure sensor with irregular microstructures is as high as 6.64 kPa−1 in the low-pressure regime, and remains fairly high (0.15 kPa−1) in the high-pressure regime (~10 kPa). Both the relatively short response time of ~30 ms and good reproducibility over 1000 cycles of pressure loading and unloading tests illustrate the high performance of the proposed device. Our pressure sensor exhibits a superior minimal limit of detection of 0.6 Pa, which shows promising potential in detecting human physiological signals such as heart rate. Moreover, it can be turned into an 8 × 8 pixels array to map spatial pressure distribution and realize array sensing imaging.


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