Growth of AlInN films via elemental layers annealing at different temperatures

2015 ◽  
Vol 29 (28) ◽  
pp. 1550169 ◽  
Author(s):  
Naveed Afzal ◽  
Mutharasu Devarajan ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Surface Roughness ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Structural Features ◽  
Cross Sectional ◽  
Increasing Trend ◽  
Different Temperatures ◽  
Xrd Patterns ◽  
Quartz Tube Furnace ◽  
Temperature Surface

This work investigates the growth of AlInN films on Si (100) substrates through the annealing of Al and InN stacking layers in the temperature range 200[Formula: see text]C to 800[Formula: see text]C. The Al/InN layers were prepared on Si (100) substrates using RF magnetron sputtering technique at 100[Formula: see text]C. The layers were annealed in a quartz tube furnace at 200[Formula: see text]C, 400[Formula: see text]C, 600[Formula: see text]C and 800[Formula: see text]C for six hours. Structural features of the films were examined through XRD whereas the surface morphology and composition of the films were studied through FESEM and EDS, respectively. The FESEM and EDS cross-sectional analyses of the films were also conducted to observe the mixing of Al/InN stacking layers. XRD patterns revealed the formation of polycrystalline AlInN films whereas the FESEM and EDS cross-sectional results indicated that the mixing of Al/InN stacked layers became more prominent with increase of the annealing temperature. Surface roughness of the films studied through AFM also exhibited an increasing trend with increase of the annealing temperature.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Effect of Annealing Atmosphere on the Morphology of Copper Oxide Thin Films Deposited on TiO2 Substrates Prepared by Sol-Gel Process

2013 ◽  
Vol 594-595 ◽  
pp. 113-117 ◽  
Author(s):  
Dewi Suriyani Che Halin ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abdul Hamid
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Copper Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Atmosphere ◽  
Oxide Thin Films ◽  
Different Temperatures ◽  
Xrd Patterns

Copper oxide films were prepared via sol-gel like spin coating starting from methanolic solutions of cupric chloride onto the TiO2 substrates. Films were obtained by spin coating under room conditions (temperature, 25-30 °C) and were subsequently annealed at different temperatures (200-400 °C) in oxidizing (air) and inert (N2) atmospheres. X-ray diffraction (XRD) patterns showed crystalline phases, which were observed as a function of the annealing conditions. The film composition resulted single or multi-phasic depending on both temperature and atmosphere. The grain size of film was measured using scanning electron microscopy (SEM) and the surface roughness of thin films was characterized by atomic force microscopy (AFM). The grain size of which was annealed in air at 300 °C was 30.39 nm with the surface roughness of 96.16 nm. The effects of annealing atmosphere on the structure and morphology of copper oxide thin films are reported.

Effect of Sputtering Pressure on Optimization of Titanium Dioxide Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 667 ◽  
pp. 452-457 ◽  
Author(s):  
N.A.M. Asib ◽  
Mohamed Zahidi Musa ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Surface Roughness ◽  
Titanium Dioxide ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Transmission Spectra ◽  
Cross Sectional ◽  
Vis Spectroscopy ◽  
Sputtering Pressure ◽  
Tio2 Nanostructures

Titanium dioxide (TiO2) nanostructures were deposited on glass substrate by Radio Frequency (RF) magnetron sputtering. The samples deposited at various sputtering pressures and annealed at 723 K, were characterized using Atomic Force Microscope (AFM) to observe the surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures, Field Emission Scanning Electrons Microscope (FESEM) to observe the particle sizes of TiO2 nanostructures and UV-vis spectroscopy to record the UV-vis transmission spectra. The aim of this paper is to determine which parameter of sputtering pressures influence the optimization of TiO2 nanostructures. AFM images show that the surface roughness of the samples decreases as the working pressures of sputtering increases. From FESEM images, it can be deduced that the higher the sputtering pressure, the smaller the particle size is. All the samples are highly transmittance with an average transmittance higher than 80% in the visible region as recorded by UV-vis transmission spectra. The relatively high transmittance of the sample indicates its low surface roughness and good homogeneity. For optimum TiO2 nanostructures deposited at various RF pressures it has the lowest surface roughness and the smallest TiO2 size particles with the indirect optical band gap of 3.41 eV.

The Influences of Annealing Temperatures on the Properties of HfO2 Thin Film and the Fabrication of SiO2/HfO2 Distributed Bragg Reflector

2015 ◽  
Vol 1101 ◽  
pp. 238-241
Author(s):  
Wen Cheng Tzou ◽  
Hon Kuan ◽  
Kai Yang Chuang
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Si Substrates ◽  
Grain Sizes ◽  
Thermal Annealing Process ◽  
Xrd Patterns ◽  
Surface Morphologies

In this study, HfO2 thin films were deposited onto the Si substrates by RF magnetron sputtering system. After deposition, the HfO2 thin films were then heated by a furnace thermal annealing process in air and at 400-700oC. The surface morphologies and crystalline characteristics of the HfO2 thin films were investigated by using SEM and XRD patterns. The grain sizes and crystalline phases increased with rising annealing temperature. In addition, the SiO2/HfO2 distributed bragg reflector (DBR) was used for improving the external quantum efficiency of the GaN-based LEDs. The output power of LEDs with 9-pair SiO2/HfO2 DBR and with Ag mirror+6-pair SiO2/HfO2 DBR were increased by approximately 10.6% and 7%, respectively, as compared with the LEDs without SiO2/HfO2 DBR.

scholarly journals Properties of RF Magnetron-Sputtered Copper Gallium Oxide (CuGa2O4) Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 921
Author(s):  
Ashwin Kumar Saikumar ◽  
Sreeram Sundaresh ◽  
Shraddha Dhanraj Nehate ◽  
Kalpathy B. Sundaram
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Wavelength Region ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Morphological Studies ◽  
Increasing Trend ◽  
First Time ◽  
Post Deposition

Thin films of CuGa2O4 were deposited using an RF magnetron-sputtering technique for the first time. The sputtered CuGa2O4 thin films were post-deposition annealed at temperatures varying from 100 to 900 °C in a constant O2 ambience for 1.5 h. Structural and morphological studies were performed on the films using X-ray diffraction analysis (XRD) and a Field Emission Scanning Electron Microscope (FESEM). The presence of CuGa2O4 phases along with the CuO phases was confirmed from the XRD analysis. The minimum critical temperature required to promote the crystal growth in the films was identified to be 500 °C using XRD analysis. The FESEM images showed an increase in the grain size with an increase in the annealing temperature. The resistivity values of the films were calculated to range between 6.47 × 103 and 2.5 × 108 Ωcm. Optical studies were performed on all of the films using a UV-Vis spectrophotometer. The optical transmission in the 200–800 nm wavelength region was noted to decrease with an increase in the annealing temperature. The optical bandgap value was recorded to range between 3.59 and 4.5 eV and showed an increasing trend with an increase in the annealing temperature.

scholarly journals Effect of Annealing Temperature on the Structural and Optical Properties of TiO2 Thin Film Prepared by Sol-gel Method

2016 ◽  
Vol 8 (3) ◽  
pp. 267-272 ◽  
Author(s):  
F. U. Khan ◽  
M. Zubair ◽  
M. Z. Ansar ◽  
M. K. Alamgir ◽  
S. Nadeem
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Morphology ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Rutile Phase ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
Different Temperatures ◽  
Xrd Patterns

The effect of annealing temperatures on the surface morphology and optical properties of titanium dioxide (TiO2) thin films deposited by spin coating on Silicon substrate was studied. The TiO2 thin films deposited onto silicon substrates were annealed at different temperatures. The structural and optical properties were studied using scanning electron microscopy (SEM), X-ray diffraction technique (XRD) and optical ellipsometer. The results indicated that the structural properties of the TiO2 thin films were changed with the increase in annealing temperature. The SEM investigation showed that as annealing temperature was increased, the grain and pores size were increased. The XRD patterns of the studied samples showed that rutile phase were found in a sample annealed at high temperature. The ellipsometry investigation shows that the refractive index increased while energy band gap decreased with the annealing temperature. The results showed that surface porosity, optical properties and surface morphology of TiO2 could be affected by changing the annealing temperature.   

TbFe2/α-Fe Nanocrystalline Exchange Coupling Magnetostrictive Films

2005 ◽  
Vol 475-479 ◽  
pp. 3741-3744
Author(s):  
Wan Li Zhang ◽  
Hong Chuan Jiang ◽  
Bin Peng ◽  
Wen Xu Zhang ◽  
Shi Qing Yang
Keyword(s):  
Exchange Coupling ◽  
Annealing Temperature ◽  
Hysteresis Loops ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
Grain Sizes ◽  
Xrd Patterns ◽  
Deposited Films ◽  
Magnetostrictive Film ◽  
Better Than

In this paper, the influences of annealing temperature on TbFe magnetostrictive film magnetic and magnetostrictive characteristics were discussed. TbFe films were prepared by RF magnetron sputtering. XRD patterns indicate that polycrystalline films consisting mainly of a-Fe and TbFe2 Laves phase could be obtained through rapid cycle annealing process (RCAP) at higher annealing temperature. Grain sizes could be controlled through varying annealing temperature. From film hysteresis loops measured by VSM, it has been found that the annealing treatment can improve TbFe film in-plane magnetization at 1600 kA.m-1 external field, and decrease in-plane coercivity. Magnetostriction of annealed TbFe films measured by optical cantilever deflectometer is better than as-deposited films at 40 kA.m-1 external magnetic field.

scholarly journals Optoelectronic Properties of Ti-doped SnO2 Thin Films Processed under Different Annealing Temperatures

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 394 ◽  
Author(s):  
Chi-Fan Liu ◽  
Chun-Hsien Kuo ◽  
Tao-Hsing Chen ◽  
Yu-Sheng Huang
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Annealing Temperature ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Lower Surface ◽  
Glass Substrates ◽  
Sno2 Thin Films ◽  
The Mean

Ti-doped SnO2 transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency (RF) magnetron sputtering system and then are annealed at temperatures in the range of 200–500 °C for 30 min. The effects of the annealing temperature on the structural properties, surface roughness, electrical properties, and optical transmittance of the thin films are then systematically explored. The results show that a higher annealing temperature results in lower surface roughness and larger crystal size. Moreover, an annealing temperature of 300 °C leads to the minimum electrical resistivity of 5.65 × 10−3 Ω·cm. The mean optical transmittance increases with an increase in temperature and achieves a maximum value of 74.2% at an annealing temperature of 500 °C. Overall, the highest figure of merit (ΦTC) (3.99 × 10−4 Ω−1) is obtained at an annealing temperature of 500 °C.

A STUDY ON THE PRECIPITATION OF Ge-RICH NANOPARTICLES IN A LUMINESCENT (Er, Ge) CO-DOPED SiO2 FILM SPUTTERED WITH Ar + O2 PLASMA

2006 ◽  
Vol 05 (04n05) ◽  
pp. 493-498
Author(s):  
C. L. HENG ◽  
Y. J. LI ◽  
J. MAYANDI ◽  
T. G. FINSTAD ◽  
S. JØRGENSEN ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Sio2 Film ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Diffraction Patterns ◽  
Amorphous States ◽  
Co Doped

We report the photoluminescence (PL) from an ( Er , Ge ) co-doped SiO 2 film deposited by rf-magnetron sputtering in an Ar + O 2 ambience. The sample film was annealed in N 2 for 30 min at different temperatures. The PL intensity increases as the annealing temperature increases from 700 to 1000°C, and drops to very weak after 1100°C annealing. High-resolution transmission electron microscopy (TEM) observation shows that there are some Ge -rich nanoparticles precipitated after 700°C annealing, and more clusters precipitated after 1000°C annealing. However, no Ge nanocrystals were found in these films, the diffraction patterns are always halo which indicates that the precipitated clusters are in amorphous states. X-ray photoelectron spectroscopy (XPS) analysis indicates the Ge in the nanoclusters is mostly in an oxidized state and the oxidation state of Er increases with increasing annealing temperature.

Effect of Annealing Temperature on the Corrosion Resistance of Electroless Produced Ni-B-W Coatings

2013 ◽  
Vol 651 ◽  
pp. 263-268 ◽  
Author(s):  
Rasid Ahmed Yildiz ◽  
Ali Göksenli ◽  
Be Hiye Yüksel ◽  
Faiz Muhaffel ◽  
Ali Aydeniz
Keyword(s):  
Corrosion Resistance ◽  
Annealing Temperature ◽  
Protective Layer ◽  
Electroless Nickel ◽  
Surface Acting ◽  
Coating Structure ◽  
Cross Sectional ◽  
Different Temperatures ◽  
Electroless Ni ◽  
Annealing Temperature Dependence

The present work deals with the formation of Ni-B-W coating on steel by electroless plating process and evaluation of their corrosion resistance after applying heat treatments at different temperatures for 1 h. The Ni-B-W coating was prepared using alkaline borohydride- reduced electroless nickel bath. Scanning electron microscopy of the surface cross-sectional view of the electroless Ni-B-W coating was analyzed and layer characteristics was investigated. Coating structure was investigated using XRD. The study reveals that the Ni-B-W coating is amorphous in their as-plated condition and upon heat treatment at 400 0C for 1 h, Ni-B-W coating crystallize and produce nickel and nickel borides in the coatings. Annealing temperature dependence of the corrosion resistance of the coating was investigated by potentiodynamic polarisation measurements. These results show that the Ni–B-W coating annealed at 650 0C exhibit better corrosion resistance than those of coatings with other annealing temperature. The corrosion resistance increased after the crystallisation of the coating, due to factors like; decrease of porosity and internal stress and the formation of tungsten oxide on the surface acting as a protective layer.

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