THE EFFECT OF THE GAS OUTLET ON THE GAS VELOCITY FIELD IN MASS-PRODUCTION OF HFCVD DIAMOND-COATED DRILLS

2014 ◽  
Vol 21 (04) ◽  
pp. 1450051
Author(s):  
BIN SHEN ◽  
LEI CHENG ◽  
FANGHONG SUN
Keyword(s):  
Velocity Field ◽  
Mass Production ◽  
Gas Flow ◽  
Critical Role ◽  
Chemical Vapor ◽  
Gas Velocity ◽  
Gas Field ◽  
Growth Environment ◽  
Fluid Field ◽  
Simulation Results

In the present study, the finite volume method (FVM) is adopted to investigate the effect of gas outlet on the fluid field generated by a hot filament chemical vapor deposition (HFCVD) setup that is designed for the mass-production of diamond coated drills. The temperature field is calculated simultaneously such that its effect on the gas flow can be included in the resulted gas velocity field. First, the effect of outlet radius (R out ) is investigated using a 2-outlets arrangement. The results show that the gas field obtained with R out = 10 mm is superior to R out = 5 mm or 15 mm, which not only can produce higher gas velocity, but also a more uniform gas field in filament plane. To further refine the uniformity of gas field outside the filament area, four 4-outlets arrangements with different combinations of the distance between gas outlets and worktable and gas inlets coverage are proposed and a comparative study on their effect on the gas field is conducted. The simulation results show that allocating two additional outlets near the worktable is beneficial for enhancing the uniformity of gas velocity field outside the filaments but slightly worsen it near the filaments. Finally, actual deposition experiments are conducted to justify the simulation results and the results suggest that the gas velocity in the drill region plays critical role on the growth rate of diamond film and the 4-outlets arrangement could provide more uniform growth environment than the 2-outlets arrangement.

THE EFFECT OF THE GAS INLET ON THE FLUID FIELD DURING FABRICATING HFCVD DIAMOND-COATED CUTTING TOOLS

2014 ◽  
Vol 21 (05) ◽  
pp. 1450068
Author(s):  
BIN SHEN ◽  
SULIN CHEN ◽  
LEI CHENG ◽  
FANGHONG SUN
Keyword(s):  
Initial Velocity ◽  
Coupling Effect ◽  
Cutting Tools ◽  
Chemical Vapor ◽  
Gas Velocity ◽  
Gas Field ◽  
Growth Environment ◽  
Fluid Field ◽  
Flute Surface ◽  
Simulation Results

In the present study, the fluid field in a process of fabricating diamond coated cutting tools using the hot filament chemical vapor deposition (HFCVD) method is investigated using the finite volume method (FVM), in which the effects of the inlet height, gas initial velocity, inlet radius and arrangement are illustrated in terms of the gas velocity magnitude and vector distribution near the filaments and the flute surface of cutting tools. In the simulations, the coupling effect of the temperature and the gas field is also considered by simultaneously calculating the temperature distribution. The simulation results suggest that either shortening the distance between the gas inlet and filaments, or increasing the gas initial velocity is helpful for the reactive gas arriving at filaments surface and being dissociated. Furthermore, increasing the inlet area is able to significantly increase the velocity of gas field around the filaments, as well as produce a much more uniform gas velocity field. Based on this conclusion, two novel multi-inlets setups are proposed to further improve the generated gas field and the simulation results show that the most superior gas field can be achieved with the one including 8 larger central inlets and 24 smaller outskirt inlets. Finally, an actual deposition experiment is carried out and its result indicates that adopting the optimized such inlet arrangement could generate a highly uniform and homogeneous growth environment on whole deposition area.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

Simulation of mechanically stirred two-phase liquid-gas flow

1986 ◽  
Vol 51 (5) ◽  
pp. 1001-1015 ◽  
Author(s):  
Ivan Fořt ◽  
Vladimír Rogalewicz ◽  
Miroslav Richter
Keyword(s):  
Spatial Distribution ◽  
Velocity Field ◽  
Gas Flow ◽  
Liquid Velocity ◽  
Model Parameters ◽  
Two Phase ◽  
Mean Velocity ◽  
Rushton Turbine ◽  
Low Viscosity ◽  
Volumetric Gas Flow Rate

The study describes simulation of the motion of bubbles in gas, dispersed by a mechanical impeller in a turbulent low-viscosity liquid flow. The model employs the Monte Carlo method and it is based both on the knowledge of the mean velocity field of mixed liquid (mean motion) and of the spatial distribution of turbulence intensity ( fluctuating motion) in the investigated system - a cylindrical tank with radial baffles at the wall and with a standard (Rushton) turbine impeller in the vessel axis. Motion of the liquid is then superimposed with that of the bubbles in a still environment (ascending motion). The computation of the simulation includes determination of the spatial distribution of the gas holds-up (volumetric concentrations) in the agitated charge as well as of the total gas hold-up system depending on the impeller size and its frequency of revolutions, on the volumetric gas flow rate and the physical properties of gas and liquid. As model parameters, both liquid velocity field and normal gas bubbles distribution characteristics are considered, assuming that the bubbles in the system do not coalesce.

scholarly journals Influence of center gas supply device on gas–solid flow in COREX shaft furnace through DEM–CFD model

2020 ◽  
Vol 18 (5-6) ◽  
Author(s):  
Heng Zhou ◽  
Shuyu Wang ◽  
Binbin Du ◽  
Mingyin Kou ◽  
Zhiyong Tang ◽  
...  
Keyword(s):  
Gas Flow ◽  
Shaft Furnace ◽  
Middle Zone ◽  
Cfd Model ◽  
Gas Velocity ◽  
Gas Distribution ◽  
Particle Segregation ◽  
Solid Flow ◽  
Corex Shaft Furnace ◽  
Gas Supply

AbstractIn order to develop the central gas flow in COREX shaft furnace, a new installment of center gas supply device (CGD) is designed. In this work, a coupled DEM–CFD model was employed to study the influence of CGD on gas–solid flow in COREX shaft furnace. The particle descending velocity, particle segregation behaviour, void distribution and gas distribution were investigated. The results show that the CGD affects the particles descending velocity remarkably as the burden falling down to the slot. Particle segregation can be observed under the inverse ‘V’ burden profile, and the influence of CGD on the particle segregation is unobvious on the whole, which causes the result that the voidage is slightly changed. Although the effect of CGD on solid flow is not significant, the gas flow in shaft furnace has an obvious change. Compared with the condition without CGD, in the case with CGD, the gas velocity is improved significantly, especially in the middle zone of the furnace, which further promotes the center gas distribution. Meanwhile, the pressure drop in the furnace with the installation of CGD is increased partly.

scholarly journals Improving the W Coating Uniformity by a COMSOL Model-Based CVD Parameter Study for Denser Wf/W Composites

Metals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1089
Author(s):  
Leonard Raumann ◽  
Jan Willem Coenen ◽  
Johann Riesch ◽  
Yiran Mao ◽  
Daniel Schwalenberg ◽  
...  
Keyword(s):  
Relative Density ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Process Time ◽  
Parameter Study ◽  
Reactor Model ◽  
Production Route ◽  
Coating Uniformity ◽  
Hydrogen Retention ◽  
Return Lead

Tungsten (W) has the unique combination of excellent thermal properties, low sputter yield, low hydrogen retention, and acceptable activation. Therefore, W is presently the main candidate for the first wall and armor material for future fusion devices. However, its intrinsic brittleness and its embrittlement during operation bears the risk of a sudden and catastrophic component failure. As a countermeasure, tungsten fiber-reinforced tungsten (Wf/W) composites exhibiting extrinsic toughening are being developed. A possible Wf/W production route is chemical vapor deposition (CVD) by reducing WF6 with H2 on heated W fabrics. The challenge here is that the growing CVD-W can seal gaseous domains leading to strength reducing pores. In previous work, CVD models for Wf/W synthesis were developed with COMSOL Multiphysics and validated experimentally. In the present article, these models were applied to conduct a parameter study to optimize the coating uniformity, the relative density, the WF6 demand, and the process time. A low temperature and a low total pressure increase the process time, but in return lead to very uniform W layers at the micro and macro scales and thus to an optimized relative density of the Wf/W composite. High H2 and low WF6 gas flow rates lead to a slightly shorter process time and an improved coating uniformity as long as WF6 is not depleted, which can be avoided by applying the presented reactor model.

Effect of Temperature and Gas Flow on Bi2Se3 Nanoplates Grown by Chemical Vapor Deposition

2018 ◽  
Vol 18 (11) ◽  
pp. 7590-7594 ◽  
Author(s):  
Peng Gu ◽  
Jinling Yu ◽  
Xiaolin Zeng ◽  
Shuying Cheng ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Effect Of Temperature

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

Numerical Study of Methane and Air Combustion Inside Heat-Recirculating Combustors

2013 ◽  
Author(s):  
Yanxia Li ◽  
Zhongliang Liu ◽  
Yan Wang ◽  
Jiaming Liu
Keyword(s):  
Gas Flow ◽  
Numerical Study ◽  
Convection Heat Transfer ◽  
Central Area ◽  
Small Scale ◽  
Inlet Velocity ◽  
Strong Convection ◽  
Simulation Results ◽  
Lean Fuel ◽  
Set Up

A numerical model on methane/air combustion inside a small Swiss-roll combustor was set up to investigate the flame position of small-scale combustion. The simulation results show that the combustion flame could be maintained in the central area of the combustor only when the speed and equivalence ratio are all within a narrow and specific range. For high inlet velocity, the combustion could be sustained stably even with a very lean fuel and the flame always stayed at the first corner of reactant channel because of the strong convection heat transfer and preheating. For low inlet velocity, small amounts of fuel could combust stably in the central area of the combustor, because heat was appropriately transferred from the gas to the inlet mixture. Whereas, for the low premixed gas flow, only in certain conditions (Φ = 0.8 ～ 1.2 when ν0 = 1.0m/s, Φ = 1.0 when ν0 = 0.5m/s) the small-scale combustion could be maintained.

TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

2015 ◽  
Vol 645-646 ◽  
pp. 70-74 ◽  
Author(s):  
Min Zhong ◽  
Yu Hang Zhao ◽  
Shou Mian Chen ◽  
Ming Li ◽  
Shao Hai Zeng ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Critical Role ◽  
Sige Layer ◽  
Strain Engineering ◽  
Effect Transistor ◽  
Simulation Results ◽  
Aided Design ◽  
The Relationship ◽  
Growth Experiments ◽  
Good Agreement

An embedded SiGe layer was applied in the source/drain areas (S/D) of a field-effect transistor to boost the performance in the p channels. Raised SiGe S/D plays a critical role in strain engineering. In this study, the relationship between the SiGe overfilling and the enhancement of channel stress was investigated. Systematic technology computer aided design (TCAD) simulations of the SiGe overfill height in a 40 nm PMOS were performed. The simulation results indicate that a moderate SiGe overfilling induces the highest stress in the channel. Corresponding epitaxial growth experiments were done and the obtained experimental data was in good agreement with the simulation results. The effect of the SiGe overfilling is briefly discussed. The results and conclusions presented within this paper might serve as useful references for the optimization of the embedded SiGe stressor for 40 nm logic technology node and beyond.

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