scholarly journals A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Shupeng Chen ◽  
Shulong Wang ◽  
Hongxia Liu ◽  
Tao Han ◽  
Haiwu Xie ◽  
...  
Keyword(s):  
High Efficiency ◽  
Physical Mechanism ◽  
Gate Dielectric ◽  
Cutoff Frequency ◽  
Subthreshold Swing ◽  
Gain Bandwidth ◽  
Ultra Low Power ◽  
Interface Characteristics ◽  
Capacitance Characteristics ◽  
Improved Performance

Abstract In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of 12 orders of magnitude and no obvious ambipolar effect can be obtained. High κ material stack gate dielectric is induced to improve the off-state leakage, interface characteristics and the reliability of DF-TFET. Moreover, by using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved. As a result, the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint. The physical mechanism of device and the effect of parameters on performance are studied in this work. Finally, on-state current (ION) of 58.8 μA/μm, minimum subthreshold swing of 2.8 mV/dec (SSmin), average subthreshold swing (SSavg) of 18.2 mV/dec can be obtained. With improved capacitance characteristics, cutoff frequency of 5.04 GHz and gain bandwidth product of 1.29 GHz can be obtained. With improved performance and robustness, DF-TFET can be a very attractive candidate for ultra-low-power applications.

scholarly journals TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 278 ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shupeng Chen ◽  
Shulong Wang ◽  
Haiwu Xie
Keyword(s):  
Integrated Circuits ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Source Region ◽  
Cutoff Frequency ◽  
Tunneling Current ◽  
Frequency Characteristics ◽  
Device Structure ◽  
Ultra Low Power ◽  
Current Switching

The device structure of DLTFET is optimized by the Silvaco TCAD software to solve the problems of lower on-state current and larger miller capacitance of traditional doping-less tunneling field effect transistors (DLTFETs), and the performance can be greatly improved. Different from the traditional DLTFETs, the source region and pocket region of the doping-less TFET with the Ge/SiGe/Si hetero-junction and hetero-gate dielectric (H-DLTFET), respectively, use the narrow band-gap semiconductor Ge and SiGe materials, and the channel and drain region both use the silicon material. The H-DLTFET device use the Ge/SiGe hetero-junction engineering to decrease the tunneling barrier width, increase the band-to-band tunneling current, and obtain the higher current switching ratio and ultra-low sub-threshold swing (SS). Besides, the gate dielectric under auxiliary gate uses the low-k dielectric SiO2 material, which can effectively reduce the miller capacitance and improve the capacitance and frequency characteristics. The on-state current, switching ratio, trans-conductance, output current, and output conductance values of H-DLTFET can be increased by two, two, one, one, and one order of magnitude when compared with the DLTFET, respectively. Meanwhile, the point SS and average SS, respectively, decrease from 13 mV/Dec and 31.6 mV/Dec to 5 mV/Dec and 14.3 mV/Dec, and the gate-drain capacitance decrease from 0.99 fF/μm to 0.1 fF/μm. Besides, the cutoff frequency and gain bandwidth product of H-DLTFET are much larger than that of DLTFET, which can be explained by the excellent DC characteristics. The above simulation results show that the H-DLTFET has the better frequency characteristics, so it is more suitable for applications of ultra-low-power integrated circuits.

scholarly journals High Efficiency Fluorinated Oligo(ethylenesuccinamide) Coating for Stone

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 452
Author(s):  
Mara Camaiti ◽  
Villiam Bortolotti ◽  
Yijian Cao ◽  
Alessandra Papacchini ◽  
Antonella Salvini ◽  
...  
Keyword(s):  
Porous Structure ◽  
High Efficiency ◽  
Surface Characteristic ◽  
Surface Wettability ◽  
Structure Evolution ◽  
Potential Candidate ◽  
Protective Agent ◽  
Irradiation Test ◽  
Improved Performance ◽  
Photo Stability

The protection of stone cultural assets is related to the transformation of the surface characteristic from hydrophilic to hydrophobic/superhydrophobic through the application of a coating. The suitability of a coating depends not only on its capability to dramatically change the surface wettability, but also on other parameters such as the modification of kinetics of water absorption, the permanence of vapor diffusivity, the resistance of the coating to aging and the low volatile organic compound emissions during its application. In this work, an oligo(ethylensuccinamide) containing low molecular pendant perfluoropolyether segments (SC2-PFPE) and soluble in environmentally friendly solvents was tested as a protective agent for historic stone artifacts. Magnetic resonance imaging and relaxometry were employed to evaluate the effects of the surface wettability change, to follow the water diffusion inside the rock and to study the porous structure evolution after the application of SC2-PFPE. A sun-like irradiation test was used to investigate the photo-stability of the product. The results demonstrate that the highly photo-stable SC2-PFPE minimizes the surface wettability of the stone by modifying the water sorptivity without significantly affecting its porous structure and vapor diffusivity. The improved performance of SC2-PFPE in comparison to other traditional coatings makes it a potential candidate as an advanced coating for stone cultural heritage protection.

scholarly journals High Efficiency Generalized Parallel Counters for Look-Up Table Based FPGAs

2015 ◽  
Vol 2015 ◽  
pp. 1-16 ◽  
Author(s):  
Burhan Khurshid ◽  
Roohie Naaz Mir
Keyword(s):  
Power Dissipation ◽  
High Speed ◽  
High Efficiency ◽  
Critical Path ◽  
Fir Filters ◽  
Path Delay ◽  
Look Up Table ◽  
Improved Performance ◽  
Ip Cores ◽  
Low Efficiency

Generalized parallel counters (GPCs) are used in constructing high speed compressor trees. Prior work has focused on utilizing the fast carry chain and mapping the logic onto Look-Up Tables (LUTs). This mapping is not optimal in the sense that the LUT fabric is not fully utilized. This results in low efficiency GPCs. In this work, we present a heuristic that efficiently maps the GPC logic onto the LUT fabric. We have used our heuristic on various GPCs and have achieved an improvement in efficiency ranging from 33% to 100% in most of the cases. Experimental results using Xilinx 5th-, 6th-, and 7th-generation FPGAs and Stratix IV and V devices from Altera show a considerable reduction in resources utilization and dynamic power dissipation, for almost the same critical path delay. We have also implemented GPC-based FIR filters on 7th-generation Xilinx FPGAs using our proposed heuristic and compared their performance against conventional implementations. Implementations based on our heuristic show improved performance. Comparisons are also made against filters based on integrated DSP blocks and inherent IP cores from Xilinx. The results show that the proposed heuristic provides performance that is comparable to the structures based on these specialized resources.

Realizing high-efficiency low frequency sound absorption of underwater meta-structures by acoustic siphon effect

2021 ◽  
pp. 2150319
Author(s):  
Li Bo Wang ◽  
Cheng Zhi Ma ◽  
Jiu Hui Wu ◽  
Chong Rui Liu
Keyword(s):  
Absorption Coefficient ◽  
Sound Absorption ◽  
High Efficiency ◽  
Physical Mechanism ◽  
Low Frequency ◽  
Area Ratio ◽  
Underwater Acoustic ◽  
Element Simulation ◽  
Average Absorption Coefficient ◽  
New Perspective

The underwater acoustic siphon effect is proposed in this work, which aims to reveal the basic physical mechanism of high-efficiency sound absorption in meta-structures composed of multiple detuned units. Furthermore, the influence of the area ratio on the underwater acoustic siphon effect is then investigated by finite element simulation (FES) and theoretical calculation. On this basis, a meta-structure with the maximum absorption coefficient of almost 100% and average absorption coefficient of 80% at 600–1400 Hz is achieved. The underwater acoustic siphon effect could provide a better understanding of high-efficiency sound absorption and offer a new perspective in controlling underwater noises.

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

Technological advances in high-efficiency particulate collection

1997 ◽  
Vol 211 (1) ◽  
pp. 53-65 ◽  
Author(s):  
K R Parker
Keyword(s):  
High Efficiency ◽  
Electrostatic Precipitator ◽  
Cost Effective ◽  
Vapour Phase ◽  
Air Toxics ◽  
Bag Filter ◽  
Element Analysis ◽  
Ongoing Research ◽  
Technological Advances ◽  
Improved Performance

Particulate control equipment for the larger industrial processes, which can effectively collect particles in the submicrometre range, is limited to the electrostatic precipitator and bag filter as cost effective methods. To meet ever decreasing emission levels, demanded by the Regulatory Agencies, the equipment suppliers and academics are involved in ongoing research and development activities in order to obtain a better understanding of the collection process itself, such as to achieve improved performance and, equally importantly, plant reliability and availability. This paper reviews some of the activities in the electrical, microelectronics, material sciences, fluid flow and finite element analysis fields and indicates how the findings are leading to new designs that are more reliable and also how the improvements are making the equipment more cost effective while operating at a higher performance level. Finally, with the concern over the emission of ‘air toxics’, while both the electrostatic precipitator and bag filter are established technology for effectively removing solid and liquid particulates with sizings well below 1 micrometre there is now an additional requirement for collecting vapour phase materials to meet the latest regulatory emission levels. Some ideas and approaches are examined which can prove effective in collecting the majority of materials classified as ‘air toxics’, such that the equipment will meet the existing and possible future emission standards.

Implementation of High-Efficiency and Ultra-Low-Power Transceiver for the Design of Body Channel Communication Applications

2020 ◽  
Vol 39 (12) ◽  
pp. 6034-6057
Author(s):  
Vitawat Sittakul ◽  
S. Vijayalakshmi ◽  
V. Nagarajan ◽  
K. Sakthidasan Sankaran ◽  
Sakthivel Sankaran
Keyword(s):  
Low Power ◽  
High Efficiency ◽  
Ultra Low Power
Sign in / Sign up

Export Citation Format

Share Document