Influence of TiN particles on the wear behavior of silicon nitride–based composites

2004 ◽  
Vol 19 (2) ◽  
pp. 542-549 ◽  
Author(s):  
Chien-Cheng Liu ◽  
Jow-Lay Huang
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
Friction And Wear ◽  
Wear Behavior ◽  
X Ray Diffraction ◽  
Friction Coefficients ◽  
A Value ◽  
Transmission Electron ◽  
Ceramic Components ◽  
Aisi 52100 Steel

The friction and wear behavior of Si3N4-based composites against AISI-52100 steel were investigated in the ball-on-disk mode in a nonlubrication reciprocation motion. It has been found that under the conditions used, all the ceramic components exhibited rather low friction and wear coefficients. For monolithic silicon nitride materials, high friction coefficients between 0.6 and 0.7 and wear coefficients between 1.63 × 10−8 and 1.389 × 10−6 mm3/N · m were measured. The contact load was varied from 100 to 300 N. By adding titanium nitride, the friction coefficients were reduced to a value between 0.4 and 0.5 and wear coefficients between 1.09 × 10−8 and 0.32 × 10−6 mm3/ N · m at room temperature. All materials and worn surfaces as well as wear debris were investigated by means of scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, and transmission electron microscopy (TEM) before or after the tribological tests. The TEM micrographs of wear track revealed plastic deformation through twins and cracking along grain boundary which play an important role in the fracture mechanism.

Unlubricated Sliding Wear of TiN Particle Reinforced Si3N4 Matrix Composites Against AISI-52100 Steel Ball

2007 ◽  
Vol 280-283 ◽  
pp. 1327-1330
Author(s):  
Chien Cheng Liu ◽  
Jow Lay Huang
Keyword(s):  
Friction And Wear ◽  
Wear Behavior ◽  
Matrix Composites ◽  
Wear Properties ◽  
Low Friction ◽  
Friction Coefficients ◽  
A Value ◽  
Aisi 52100 ◽  
Ceramic Components ◽  
Aisi 52100 Steel

The effects of TiN addition to Si3N4 on its mechanical and wear properties were investigated. The size and content of TiN particles were found having effects on the strength and toughness of Si3N4-based composites. The friction and wear behavior of Si3N4 based composites against AISI-52100 steel were investigated in the ball -on- disc mode in a non-lubrication reciprocation motion. It has been found that under the conditions used all the ceramic components exhibited rather low friction and wear coefficients. For monolithic silicon nitride materials, high friction coefficients between 0.6 and 0.7 and wear coefficients between 1.63 × 10-8 and 1.389 × 10-6 mm3/N.m were measured. The contact load was varied from 100 to 300 N. By adding titanium nitride, the friction coefficients was reduced to a value between 0.4 and 0.5 and wear coefficients between 1.09×10-8 and 0.32×10-6 mm3/N.m at room temperature.

Cu2SnS3 Inorganic-Organic Hybrid Structures for Photovoltaic Applications

2015 ◽  
Vol 1784 ◽  
Author(s):  
Sandra Dias ◽  
S. B. Krupanidhi
Keyword(s):  
Electron Microscopy ◽  
Hybrid Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hybrid Device ◽  
Organic Hybrid ◽  
A Value ◽  
Transmission Electron ◽  
Absorption Studies ◽  
Photovoltaic Applications

ABSTRACTWe report the synthesis of Cu2SnS3 (CTS) nanostructures and its incorporation into an inorganic-organic hybrid device to enhance the photoresponse under AM 1.5 G solar illumination. The nanostructures were structurally and optically characterized. From X-ray diffraction (XRD) and Transmission electron microscopy (TEM) the CTS nanocrystals were found to be tetragonal. Flower like structures of CTS were obtained as seen from Scanning electron microscopy (SEM). A band gap of 1.4 eV was obtained from absorption studies. Two devices have been studied, P3HT: PCBM = 1: 1 and CTS: P3HT: PCBM = 8:1:1. The photocurrent increased from a value of 2.33 mA at dark to 2.5 mA for the P3HT-PCBM blend to 3.36 mA for CTS: P3HT: PCBM = 8:1:1 device. The responsivity, sensitivity, external quantum efficiency and specific detectivity increased from 18.81 mA/W, 1.07, 4.25% and 6.88 × 108 Jones respectively for P3HT:PCBM sample to 189.97 mA/W, 1.44, 42.9% and 6.95 × 109 Jones for CTS: P3HT: PCBM = 8:1:1 sample at 1V bias and 1 Sun illumination intensity. The time dependent photoresponse was stable over different ON-OFF cycles. From the fit to the rise and decay curves, the rise and decay time constants were obtained.

Microstructure of a bearing-grade silicon nitride

1999 ◽  
Vol 14 (12) ◽  
pp. 4621-4629 ◽  
Author(s):  
Mingqi Liu ◽  
Sia Nemat-Nasser
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
Grain Boundaries ◽  
Amorphous Film ◽  
Boundary Phase ◽  
X Ray Diffraction ◽  
Intimate Contact ◽  
Low Contrast ◽  
Transmission Electron ◽  
Grade Silicon

The microstructure of a bearing-grade silicon nitride, prepared by pressureless sintering with Y2O3, AlN, and TiO2 additives and then hot-isostatically pressed, is examined with high-resolution transmission electron microscopy, scanning electron microscopy, and x-ray diffraction. The material consists of large acicular β–Si3N4 grains and small equiaxial α–Si3N4 grains. An amorphous phase containing the sintering aids is observed at the two-grain boundaries and at the grain pockets. No crystalline boundary phase is identified. The α-to-β and β-to-β grain boundaries appear straight and well defined. The dominant crystalline planes observed at the β-grain boundaries are (1010) and (1120). The intergranular spacing of the two-grain boundaries (α-to-β and β-to-β) is 1.0 nm when a high-contrast boundary phase is present, and it is 0.8 nm when a low-contrast boundary phase is present, confirming that the film thickness is strongly dependent on the boundary-phase composition. The α-to-α boundaries are often curved, and the thickness of the amorphous film at these boundaries varies from 0.7 to 1.1 nm. Evidence of near-intimate contact between β-grains is also observed.

Catalyst-Free Growth of Tin Oxide One-Dimensional Nanostructures on Silicon Nitride Substrates

2007 ◽  
Vol 555 ◽  
pp. 297-302
Author(s):  
S.H. Shim ◽  
Hyoun Woo Kim ◽  
C. Lee ◽  
D.J. Chung ◽  
S.G. Park ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Light Emission ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
One Dimensional ◽  
Si Substrates ◽  
Transmission Electron

We have obtained one-dimensional (1D) nanomaterials of tin oxide (SnO2) on silicon nitride (Si3N4)-coated Si substrates by carrying out the thermal evaporation of solid Sn powders and varying the substrate temperature in an Ar/O2 ambient gas. We analyzed the samples with scanning electron microscopy, X-ray diffraction, transmission electron microscopy and photoluminescence (PL). Reactions at a lower substrate temperature gave rise to thinner 1D structures. The obtained 1D nanomaterials were single crystalline with a tetragonal rutile structure. We proposed a vapor-solid process as the growth mechanism for SnO2 nanorods. The PL spectrum exhibited visible light emission.

The Preparation of Bi-Pb-Sr-Ca-Cu-O Superconducting Powder for Thick Film Pastes

1989 ◽  
Vol 169 ◽  
Author(s):  
J. Hagberg ◽  
A. Uusimäki ◽  
J. Levoska ◽  
S Leppävuori ◽  
R Rautioaho
Keyword(s):  
Electron Microscopy ◽  
Particle Size ◽  
Surface Area ◽  
Nominal Composition ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Oxalate Route

AbstractThe oxalate route was used to prepare (Bi-Pb) -Sr-Ca-Cu-O powder with the nominal composition Bi1.75Pb0.4Sr1.3Ca2.1Cu3.2Oy. This powder was decomposed/annealed at different temperatures between 434 and 795°C. They were investigated by thermogravimetric analysis, X-ray diffraction and transmission electron microscopy. Particle size distribution and surface area were also determined. The specific surface area decreased from a value of 16.5 m2/g for powder decomposed at 434 °C to 1.0 m2/g for powder decomposed at 795 °C. The measured mean particle size reached a minimum of 0.52 juri for powder decomposed at 589 °C.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

Identification of calcium oxalate crystals in dried or fixed tobacco leaf

1984 ◽  
Vol 42 ◽  
pp. 288-289
Author(s):  
Vicki L. Baliga ◽  
Mary Ellen Counts
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Calcium Oxalate ◽  
Growth And Development ◽  
Polarized Light ◽  
Calcium Oxalate Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

Calcium is an important element in the growth and development of plants and one form of calcium is calcium oxalate. Calcium oxalate has been found in leaf seed, stem material plant tissue culture, fungi and lichen using one or more of the following methods—polarized light microscopy (PLM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x-ray diffraction.Two methods are presented here for qualitatively estimating calcium oxalate in dried or fixed tobacco (Nicotiana) leaf from different stalk positions using PLM. SEM, coupled with energy dispersive x-ray spectrometry (EDS), and powder x-ray diffraction were used to verify that the crystals observed in the dried leaf with PLM were calcium oxalate.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Devitrification products of rapidly solidified Ni-Nb amorphous alloys.

1990 ◽  
Vol 48 (4) ◽  
pp. 950-951
Author(s):  
G. A. Bertero ◽  
W.H. Hofmeister ◽  
N.D. Evans ◽  
J.E. Wittig ◽  
R.J. Bayuzick
Keyword(s):  
Electron Microscopy ◽  
Amorphous Structure ◽  
Sulphuric Acid Solution ◽  
X Ray Diffraction ◽  
High Fracture ◽  
Transmission Electron ◽  
Xrd Techniques ◽  
Rapidly Solidified ◽  
Electromagnetically Levitated

Rapid solidification of Ni-Nb alloys promotes the formation of amorphous structure. Preliminary results indicate promising elastic properties and high fracture strength for the metallic glass. Knowledge of the thermal stability of the amorphus alloy and the changes in properties with temperature is therefore of prime importance. In this work rapidly solidified Ni-Nb alloys were analyzed with transmission electron microscopy (TEM) during in-situ heating experiments and after isothermal annealing of bulk samples. Differential thermal analysis (DTA), scanning electron microscopy (SEM) and x-ray diffraction (XRD) techniques were also used to characterize both the solidification and devitrification sequences.Samples of Ni-44 at.% Nb were electromagnetically levitated, melted, and rapidly solidified by splatquenching between two copper chill plates. The resulting samples were 100 to 200 μm thick discs of 2 to 3 cm diameter. TEM specimens were either ion-milled or alternatively electropolished in a methanol-10% sulphuric acid solution at 20 V and −40°C.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

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