Photoluminescence Spectra of C+-Implanted GaAs: Experimental Verification on Amphoteric Features of Carbon Impurities in GaAs

1988 ◽  
Vol 100 ◽  
Author(s):  
Yunosuke Makita ◽  
Shigeru Shigetomi ◽  
Masahiko Mori ◽  
Nobukazu Ohnishi ◽  
Paul Phelan ◽  
...  
Keyword(s):  
Point Defects ◽  
Experimental Verification ◽  
Room Temperature ◽  
Low Dose ◽  
Annealing Temperature ◽  
Critical Value ◽  
Photoluminescence Spectra ◽  
Disordered Lattice ◽  
Carbon Impurities ◽  
Scattering Measurements

ABSTRACTC+ ion-implantation was carried out for extremely pure GaAs gown by moleplar Ieam epitaxy. The dose was very widely varied from 1×1015 to 1×1020 cm−3. Photoluminescence and Raman scattering measurements were performed at 2 K and room temperature, respectively, both as functions of dose and annealing temperature. The results revealed that for a dose less than 5×1017 cm−3, where the dominant damages are point defects, annealing at 200°C is sufficient to attain a damage-free lattice. When the dose is above that value, where the principal damage is a highly disordered lattice, annealing, at least above 550°C, is required. Photoluminescence spectra showed that the well-defined near-band-gap emission, [g-g], (exclusively inherent to acceptors), was a dominant emission in the above mentioned low dose region, but was strongly suppressed in the higher region. These observations indicate that ion-implanted C atoms in GaAs behave as amphoteric impurities when the dose exceeds a critical value, of around 5×1017 cm−3.

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

scholarly journals Improved Synthesis of ZnO Nanowalls: Effects of Chemical Bath Deposition Time and Annealing Temperature

Chemosensors ◽  
2019 ◽  
Vol 7 (2) ◽  
pp. 18 ◽  
Author(s):  
Domenico Pellegrino ◽  
Giorgia Franzò ◽  
Vincenzina Strano ◽  
Salvo Mirabella ◽  
Elena Bruno
Keyword(s):  
Chemical Bath Deposition ◽  
Room Temperature ◽  
Deposition Time ◽  
Annealing Temperature ◽  
Low Cost ◽  
Growth Time ◽  
Electric Transport ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Temperature Operating

Zinc Oxide (ZnO) nanowalls (NWLs) are interesting nanostructures for sensing application. In order to push towards the realization of room-temperature operating sensors, a detailed investigation of the synthesis effect on the electrical and optical properties is needed. This work focuses on the low-cost synthesis of ZnO NWLs by means of chemical bath deposition (growth time of 5, 60, and 120 minutes) followed by annealing in inert ambient (temperature of 100, 200, and 300 °C). The as-grown NWLs show a typical intertwined network of vertical sheets whose features (thickness and height) stabilize after 60 minutes growth. During thermal annealing, NWLs are converted into ZnO. The electric transport across the ZnO NWL network radically changes after annealing. A higher resistivity was observed for longer deposition times and for higher annealing temperatures, at which the photoluminescence spectra resemble those obtained for ZnO material. A longer deposition time allows for a better transformation to ZnO during the annealing, thanks to the presence of ZnO seeds just after the growth. These findings can have a significant role in promoting the realization of room-temperature operating sensors based on ZnO NWLs.

Lattice site and photoluminescence of erbium implanted in α–Al2O3

1997 ◽  
Vol 12 (5) ◽  
pp. 1401-1404 ◽  
Author(s):  
G. N. van den Hoven ◽  
A. Polman ◽  
E. Alves ◽  
M. F. da Silva ◽  
A. A. Melo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lattice Site ◽  
Low Dose ◽  
Photoluminescence Spectra ◽  
Ion Channeling ◽  
Octahedral Sites ◽  
Erbium Ions ◽  
High Concentrations ◽  
Α Al2o3 ◽  
Single Crystal Sapphire

Single-crystal sapphire (α–Al2O3) was implanted at room temperature with 200 keV erbium ions to a fluence of 8 × 1013 cm–2. Ion channeling using 1.6 MeV He+ shows that the crystal suffers little damage for this low dose implant. Angular scans through axial and planar directions in the crystal indicate that 70% of the Er atoms reside on displaced octahedral sites in the α–Al2O3 lattice. As pure Al2O3 has a high density of free octahedral sites, this explains why high concentrations of Er can be dissolved in this material. Smaller fractions of Er are found on tetrahedral (20%) and random (10%) sites. The samples exhibit strongly peaked photoluminescence spectra around 1.5 μm, due to intra-4f transitions in Er3+, indicating the existence of well-defined sites for the luminescing Er3+ ions. It is concluded that the octahedral site is the dominating optically active site in the lattice.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

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