Native Oxide Growth Behavior on Silicon Surface with Various Resistivity in Ultrapure Water and CuF2 Solution

1997 ◽  
Vol 477 ◽  
Author(s):  
Katsuyuki Sekine ◽  
Geun-Min Choi ◽  
Yuji Saito ◽  
Tadahiro Ohmi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Pure Water ◽  
Oxide Thickness ◽  
Growth Behavior ◽  
Native Oxide ◽  
Oxide Growth ◽  
Ultrapure Water ◽  
Relationship Of ◽  
The Relationship

ABSTRACTWe have studied native oxide growth behavior on silicon surface with various resistivity in ultra pure water (UPW), SPM (sulfuric acid-hydrogen peroxide mixture, H2SO4:H2O2 = 4:1) cleaning and UPW contaminated with CuF2 by X-Ray photoelectron spectroscopy (XPS). The results show that the native oxide growth behavior in UPW is different from that in UPW contaminated with CuF2 and that grown by SPM cleaning. Native oxide thickness grown in UPW depends on resistivity. Native oxide thickness grown during SPM cleaning has the relationship of steric hinderance effect. However, in CuF2 solution, native oxide thickness is more influenced by the redox reaction between Cu ions and silicon atoms.

The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

1992 ◽  
Vol 259 ◽  
Author(s):  
Y. Ishimaru ◽  
M. Yoshiki ◽  
T. Hatanaka
Keyword(s):  
Silicon Wafer ◽  
Silicon Surface ◽  
Dopant Concentration ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Wafer Surface ◽  
Oxide Growth ◽  
X Ray ◽  
Silicon Bulk ◽  
P Type

ABSTRACTThe effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

Layer-by-Layer Oxidation of Silicon

1991 ◽  
Vol 222 ◽  
Author(s):  
T. Yasaka ◽  
M. Takakura ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxidation Rate ◽  
Pure Water ◽  
Oxygen Adsorption ◽  
Native Oxide ◽  
Oxide Growth ◽  
Layer By Layer ◽  
X Ray ◽  
P Type ◽  
Kinetics Of

ABSTRACTGrowth kinetics of native oxide on HF-treated Si surfaces terminated with Si-H bonds has been studied by angle-resolved x-ray photoelectron spectroscopy. The oxide growth rate in pure water for an n+ Si(100) surface is significantly high compared to that of p+, and the n or p type Si oxidation rate is in between. This is explained by the formation of ions through electron transfer from Si to adsorbed O2 molecules and the resulting enhancement of the oxidation rate. The oxide growth on Si(100) is faster than (110) and (111) as interpreted in terms of the steric hindrance for molecular oxygen adsorption on the hydrogen terminated silicon 1×1 surface structures.

Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2392-L2394 ◽  
Author(s):  
Mizuho Morita ◽  
Tadahiro Ohmi ◽  
Eiji Hasegawa ◽  
Akinobu Teramoto
Keyword(s):  
Hydrogen Peroxide ◽  
Silicon Surface ◽  
Native Oxide ◽  
Oxide Growth ◽  
Ultrapure Water

The Effect of contamination solutions and substrate conditions on Copper Particle Growth Behavior

1997 ◽  
Vol 477 ◽  
Author(s):  
Geun-Min Choi ◽  
Katsuyuki Sekijne ◽  
Hiroshi Morita ◽  
Tadahiro Ohmi
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Single Crystal Silicon ◽  
Particle Growth ◽  
Oxide Thickness ◽  
Growth Behavior ◽  
Native Oxide ◽  
Ultrapure Water ◽  
Copper Contamination ◽  
Crystal Silicon

ABSTRACTCu particle growth behavior on two silicon substrates, amorphous and single crystal silicon, has been investigated using two contamination solutions. This study reveals that the growth behavior of Cu particle depends on substrate conditions and copper contamination solutions. Contamination level is independent of split conditions. From the SEM images of an amorphous silicon shows a big difference in the number of particles depending on copper contamination solution. The amorphous silicon has similar native oxide thickness in ultrapure water spiked with CuF2 and CuCl2, whereas the single crystal silicon is different from the native oxide thickness depending on copper contamination solution. When 1 ppm of Cu in ultrapure water was spiked as a function of time, the amount of Cu impurity on amorphous silicon in the early dipping stage was measured 10 times higher than that on single crystal silicon for both of copper contamination solutions.

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

Cleaning and Oxidation of Heavily Doped Si Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
T. Yasaka ◽  
S. Uenaga ◽  
H. Yasutake ◽  
M. Takakura ◽  
S. Miyazaki ◽  
...  
Keyword(s):  
Growth Rate ◽  
Steric Hindrance ◽  
Photoelectron Spectroscopy ◽  
Oxidation Rate ◽  
Electron Tunneling ◽  
Pure Water ◽  
Native Oxide ◽  
Layer By Layer ◽  
Surface Electric Field ◽  
Heavily Doped

ABSTRACTHF-treated Si surfaces and the oxidation kinetics in pure water or in clean room air have systematically been studied by x-ray photoelectron spectroscopy (XPS). The oxidation of heavily-doped n-type Si appears to proceed parallel to the surface, resulting in the layer-by-layer oxidation. The oxide growth rate in pure water for heavily-doped n-type Si is significantly higher than that of heavily-doped ptype Si. This is explained by the electron tunneling from the Si conduction band to adsorbed O2 molecules to form the O2 state. O2 ions easily decompose and induce a surface electric field, enhancing the oxidation rate. The growth rate of native oxide on heavily-doped n-type Si is less sensitive to the crystallographic orientations than the case of lightly doped Si where the steric hindrance against oxygen molecules significantly lowers the oxidation rate of the (110) and (111) surfaces. We suggest that the decomposed oxygen can penetrate into Si without steric hindrance. It is also found that the oxidation of heavily-doped n-type Si in pure water is effectively suppressed by adding a small amount (10 ∼ 3600 ppm) of HCI.

Non-Relaxing Crack Growth and Fatigue in a Non-Crystallizing Rubber

1974 ◽  
Vol 47 (5) ◽  
pp. 1253-1264 ◽  
Author(s):  
P. B. Lindley
Keyword(s):  
Crack Growth ◽  
Growth Behavior ◽  
Crack Growth Behavior ◽  
Maximum Deformation ◽  
Fatigue Data ◽  
Tentative Explanation ◽  
Tearing Energy ◽  
Relationship Of ◽  
The Relationship ◽  
Unique Relationship

Abstract The crack growth behavior of a non-crystallizing rubber, SBR, is investigated in terms of the tearing energy T, the energy available for crack growth. For cyclic deformations in which the minimum tearing energy is zero (relaxing conditions), a unique relationship is obtained between the growth per cycle and T at the maximum deformation. This rubber also exhibits crack growth at constant tearing energies. The relationship of the crack growth rate as a function of tearing energy, when the minimum tearing energy of the cycle is not zero, can be superimposed on the relaxing relationship by scaling the rates, and a tentative explanation is proposed for the scaling factor. Fatigue data are consistent with this.

scholarly journals Electrolyte Additives in Lithium Ion EV Batteries and the Relationship of the SEI Composition to Cell Resistance and Lifetime

Electrochem ◽  
2020 ◽  
Vol 1 (2) ◽  
pp. 200-216
Author(s):  
Micheal J. Lain ◽  
Irene Rubio Lopez ◽  
Emma Kendrick
Keyword(s):  
Photoelectron Spectroscopy ◽  
Lithium Ion ◽  
Cycling Performance ◽  
Anode Surface ◽  
Electrolyte Additives ◽  
Lithium Ion Cell ◽  
Surface Profiles ◽  
Relationship Of ◽  
The Relationship ◽  
Lower Impedance

Sulphur, boron and phosphorous containing electrolyte additives were evaluated in cells containing pristine electrodes from a commercial EV lithium ion cell against a standard baseline electrolyte. Following formation and a full cell ageing step, cycling performance and impedance spectroscopy were used to elucidate the most effective additives. The additive tris trimethyl silyl phosphite (TTSPi) showed the most promise; with improved cell capacities and reduced impedances observed after formation. X-ray photoelectron spectroscopy (XPS) measurements on anode elemental surface profiles were correlated with the electrochemical performance. It was observed that increased lithium fluoride content on the surface of the anodes typically produced cells with lower impedance. Sulphur containing additives also showed improved cell behaviours; and the decomposition and chemical reactions of these compounds at the anode surface is discussed in detail. The main influence of TTSPi was to reduce the amount of oxygen (C=O) and sulphur in the electrolyte interphase (SEI) layer; to be replaced with hydrocarbons.

Relationship of Structure and Surfactivity of Chitosan-Based Surfactants (SPDACS) and Application for Paclitaxel Solubilization

2020 ◽  
Vol 845 ◽  
pp. 65-70
Author(s):  
Ming Chun Li ◽  
Mei Hua Xin
Keyword(s):  
Molecular Weight ◽  
Pure Water ◽  
Side Chain ◽  
Alkyl Groups ◽  
Substitution Degree ◽  
Mean Size ◽  
New Type ◽  
The Mean ◽  
Relationship Of ◽  
The Relationship

In this study, a new type of surfactant, N, N-dialkyl-3, 6-O-sulfopropyl chitosan (SPDACS) was prepared with two kinds of chitosan (Mw 10 and 50 kDa) and three kinds of alkyl groups (octyl, decyl and lauryl) respectively. The substitution degree of alkyl chain was around 1.50, and the substitution degree of sulfopropyl was around 1.70. The relationship of structure and surfactivity of chitosan-based surfactants were studied with six different structures of SPDACS.The results showed that the length of alkyl side chain and the molecular weight of chitosan main chain of SPDACS had distinct effect on the surface tension (γ) and the critical micelle concentration (CMC). CMC and γ could be reduced as the length of alkyl and the molecular weight of chitosan increased. For the products with 50 kDa of chitosan, the CMC decreased from 0.014 to 0.006 mg/mL, and γ down to 23.59 from 28.76 mN/m as the length of alkyl increased from 8C to 12C. The similar patterns happened for the products with 10 kDa of chitosan. The mean size of the blank micelles decreased with the growth of the length of alkyl, and the molecular weight of chitosan had little effect on the particle size. The zeta potential of all micelles were above -35mV which meant the micelles had good stability in the solution.The product of 5-SPDLCS (50 kDa, lauryl) with the best surfactivity were selected for the study of PTX solubilization. The optimal ratio of 5-SPDLCS/PTX was determined to be 1/1.1. The results showed the encapsulation effificiency (EE) and loading effificiency (LE) were 92.2 % and 50.36 % respectively. The solubility of PTX in water reached to 6.08 mg/mL. The solubility of PTX was 60,000 times higher than that of PTX (< 0.0001mg/mL) in pure water.

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