New Technology and Developments in Compound Semiconductor Vertical RDR-MOCVD Growth Systems

1994 ◽  
Vol 340 ◽  
Author(s):  
M. McKee ◽  
G.S. Tompa ◽  
P.A. Zawadzki ◽  
A. Thompson ◽  
A. Gurary ◽  
...  
Keyword(s):  
New Technology ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Easy Access ◽  
Organic Chemical ◽  
Optimum Process ◽  
Process Conditions ◽  
Monitoring And Control ◽  
Large Area ◽  
Wide Range

ABSTRACTCompound semiconductors are at the heart of todays advanced digital and optoelectronic devices. As device production levels increase, so too does the need for high throughput deposition systems. The vertical rotating disk reactor (RDR) has been scaled to dimensions allowing metal organic chemical vapor deposition (MOCVD) on multiple substrates located on a 300 mm diameter platter. This symetric large area reactor affords easy access over a wide range of angles for optical monitoring and control of the growth process. The RDR can be numerically modeled in a straightforward manner, and we have derived scaling rules allowing the prediction of optimum process conditions for larger reactor sizes. The material results give excellent agreement with the modeling, demonstrating GaAs/AlAs structures with <±0.9% thickness uniformities on up to 17-50mm or 4-100mm GaAs substrates. Process issues related to reactor scaling are reviewed. With high reactant efficiencies and short cycle times between growths, through the use of a vacuum loadlock, the costs per wafer are found to be dramatically less than in alternative process reactors. The high reactant utilization, in combination with a dedicated and highly efficient exhaust scrubbing system, minimizes the systems environmental impact.

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

scholarly journals Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

1997 ◽  
Vol 2 ◽  
Author(s):  
J.-Chr. Holst ◽  
L. Eckey ◽  
A. Hoffmann ◽  
I. Broser ◽  
H. Amano ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Blue Laser ◽  
Basic Material ◽  
Organic Chemical ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Wide Range ◽  
Gain Spectra ◽  
Excitation Processes

High-excitation processes like biexciton decay and recombination of an electron-hole-plasma are discussed as efficient mechanisms for lasing in blue laser diodes [1]. Therefore, the investigation of these processes is of fundamental importance to the understanding of the properties of GaN as a basic material for optoelectronical applications. We report on comprehensive photoluminescence and gain measurements of highly excited GaN epilayers grown by metal-organic chemical vapor deposition (MOCVD) over a wide range of excitation densities and temperatures. For low temperatures the decay of biexcitons and the electron-hole-plasma dominate the spontaneous-emission and gain spectra. A spectral analysis of the lineshape of these emissions is performed and the properties of the biexciton and the electron-hole-plasma in GaN will be disscused in comparison to other wide-gap materials. At increased temperatures up to 300 K exciton-exciton-scattering and band-to-band recombination are the most efficient processes in the gain spectra beside the electron-hole-plasma.

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Process and Evaluation of High Reliability Reworkable Edge Bond Adhesives for Large Area BGA Applications

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 002018-002053
Author(s):  
Swapan Bhattacharya ◽  
Fei Xie ◽  
Daniel F. Baldwin ◽  
Han Wu ◽  
Kelley Hodge ◽  
...  
Keyword(s):  
High Performance ◽  
Printed Circuit Boards ◽  
Process Development ◽  
High Reliability ◽  
Optimum Process ◽  
Process Conditions ◽  
Harsh Environment ◽  
Mechanical Shock ◽  
Large Area ◽  
Reliability Performance

Reworkable underfills and edge bond adhesives are finding increasing utility in high reliability and harsh environment applications. The ASICs and FPGAs often used in these systems typically require designs incorporating large BGAs and ceramic BGAs. For these high reliability and harsh environment applications, these packages typically require underfill or edge bond materials to achieve the needed thermal cycle, mechanical shock and vibration reliability. Moreover, these applications often incorporate high dollar value printed circuit boards (on the order of thousands or tens of thousands of dollars per PCB) hence the need to rework these assemblies and maintain the integrity of the PCB and high dollar value BGAs. This further complicates the underfill requirements with a reworkability component. Reworkable underfills introduce a number of process issues that can result in significant variability in reliability performance. In contrast, edge bond adhesives provide a high reliability solution with substantial benefits over underfills. One interesting question for the large area BGA applications of reworkable underfills and edge bond materials is the comparison of their reliability performance. This paper presents a study of reliability comparison between two robust selected reworkable underfill and edge bond adhesive in a test vehicle including 11mm, 13mm, and 27mm large area BGAs. Process development for those large area BGA applications was also conducted on the underfill process and edge bond process to determine optimum process conditions. For underfill processing, establishing an underfill process that minimizing/eliminates underfill voids is critical. For edge bond processing, establishing an edge bond that maximizes bond area without encapsulating the solder balls is key to achieving high reliability. In addition, this paper also presents a study of new high performance reworkable edge bond materials designed to improve the reliability of large area BGAs and ceramic BGAs assemblies while maintaining good reworkablity. Four edge bond materials (commercially available) were studied and compared for a test vehicles with 12mm BGAs. The reliability testing protocol included board level thermal cycling (−40 to 125°C), mechanical drop testing (2900 G), and random vibration testing (3 G, 10 – 1000 Hz).

scholarly journals Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

2020 ◽  
Vol 10 (9) ◽  
pp. 3050 ◽  
Author(s):  
Aditya Prabaswara ◽  
Jens Birch ◽  
Muhammad Junaid ◽  
Elena Alexandra Serban ◽  
Lars Hultman ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Alternative Methods ◽  
Organic Chemical ◽  
Large Area ◽  
Material Quality ◽  
Pulsed Dc ◽  
Metal Organic ◽  
Magnetron Sputter

Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic-grade GaN. In this article, we review the basics of reactive sputtering for MSE growth of GaN using a liquid Ga target. Various target biasing schemes are discussed, including direct current (DC), radio frequency (RF), pulsed DC, and high-power impulse magnetron sputtering (HiPIMS). Examples are given for MSE-grown GaN thin films with material quality comparable to those grown using alternative methods such as molecular-beam epitaxy (MBE), metal–organic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE). In addition, successful GaN doping and the fabrication of practical devices have been demonstrated. Beyond the planar thin film form, MSE-grown GaN nanorods have also been demonstrated through self-assembled and selective area growth (SAG) method. With better understanding in process physics and improvements in material quality, MSE is expected to become an important technology for the growth of GaN.

Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 329-334 ◽  
Author(s):  
Jing Lu ◽  
Jie Su ◽  
Ronald Arif ◽  
George D. Papasouliotis ◽  
Ajit Paranjpe
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Electron Mobility Transistor ◽  
Xrd Analysis ◽  
Structural Quality ◽  
Organic Chemical ◽  
High Electron ◽  
Mocvd Reactor ◽  
Metal Organic

ABSTRACTInAlN films and InAlN/GaN high electron mobility transistor (HEMT) structures were demonstrated on 150mm <111> Si using Veeco’s Propel single wafer metal-organic chemical vapor deposition (MOCVD) system. Smooth surfaces with root mean square (rms) roughness of 0.68 nm were observed in a 5x5 μm2 atomic force microscope (AFM) scan. X-ray diffraction (XRD) analysis shows well-defined layer peaks and fringes, indicating good structural quality and abrupt layer interfaces. Thickness uniformity of InAlN is 0.87%, 1σ, for a 7-point XRD measurement across the 150 mm wafer. Secondary ion mass spectrometry (SIMS) analysis confirms the uniform indium depth profile and the presence of abrupt layer interfaces. Negligible Ga (< 100 ppm, atomic) incorporation was detected in the InAlN bulk film. Film sheet resistance of 230Ω/sq, charge of 2.1×1013/cm2, and mobility of 1270 cm2/V.s were measured on a prototypical InAlN/GaN HEMT structure comprising a 10 nm-thick, 17% indium, InAlN barrier.

The Effect of Carrier Gas and Reactor Pressure on Gallium Nitride Growth in MOCVD Manufacturing Process

2019 ◽  
Vol 141 (8) ◽  
Author(s):  
Omar Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Gallium Nitride ◽  
Chemical Vapor ◽  
Wide Band ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Gas Mixture ◽  
Carrier Gas ◽  
Reactor Pressure

Gallium nitride (GaN) is an attractive material for manufacturing light emitting diodes and other electronic devices due to its wide band-gap and superb optoelectronic performance. The quality of GaN thin film determines the reliability and durability of these devices. Metal-organic chemical vapor deposition (MOCVD) is a common technique used to fabricate high-quality GaN thin films. In this paper, GaN growth rate and uniformity in a vertical rotating disk MOCVD reactor are investigated on the basis of a three-dimensional computational fluid dynamics (CFD) model. GaN growth rate is investigated under the influence of reactor pressure, precursor concentration ratio, and composition of the carrier gas mixture. The numerical simulation shows that the carrier gas mixture and the reactor pressure have significant effects on growth rate and uniformity of GaN thin films. It is also found that an appropriate mixture of N2 and H2 may be employed as the carrier gas to improve the flow field characteristic in the reactor. This results in an improved crystal growth of GaN thin films.

scholarly journals Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940007 ◽  
Author(s):  
M. A. Mastro ◽  
J. K. Hite ◽  
C. R. Eddy ◽  
M. J. Tadjer ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electronic Device ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Material System ◽  
Power Electronic ◽  
Large Area ◽  
Bulk Crystal Growth ◽  
Device Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

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