Direct Correlation Between Grain Configuration and Electromigration Damage Development

1996 ◽  
Vol 428 ◽  
Author(s):  
W. C. Shih ◽  
A. Ghiti ◽  
K. S. Low ◽  
A. L. Greer ◽  
A. G. O'Neill ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Boundary Misorientation ◽  
Concentration Gradients ◽  
Damage Development ◽  
Cu Content ◽  
Grain Structures ◽  
Simulation Based ◽  
Atom Migration ◽  
First Time

AbstractThe development of electromigration-induced voids and hillocks in Al - 4 wt. % Cu interconnects is monitored by scanning electron microscopy during interrupted testing and is correlated directly with the actual grain configuration including precipitates. The short segments under study and their grain structures are defined and observed using focused ion beam microscopy. The Cu content in precipitate grains is swept away before electromigration damage, and at most such grains there is subsequent grain thinning. The observations are compared with the results from a computer simulation based on a finite-element calculation of self-consistent current density and temperature distributions. For the first time the simulation uses the actual grain configuration and incorporates Cu atom migration, and back-fluxes driven by stress and concentration gradients. In the simulation the grain-boundary diffusivity is taken to be independent of boundary misorientation or is varied according to randomly assigned orientations. The comparison of the voiding in these two simulated cases and the observations shows that some grain configurations are very susceptible to electromigration damage whatever the diffusivities. For most configurations, however, the misorientation dependence of grainboundary diffusivity is significant and must be included if simulations are to be realistic.

Analysis of Geometrical and Microstructural Effects on Void Formation in Metallization: Observation and Modelling

1996 ◽  
Vol 428 ◽  
Author(s):  
W. C. Shih ◽  
A. Ghiti ◽  
K. S. Low ◽  
A. L. Greer ◽  
A. G. O'Neill ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Void Formation ◽  
Grain Structure ◽  
Flux Divergence ◽  
Damage Development ◽  
Temperature Variations ◽  
Atomic Flux ◽  
Grain Structures ◽  
Microstructural Effects

AbstractThis paper reports the analysis of geometrical and microstructural effects on void formation in interconnects. Ion-beam machining is used to define segments for study at the cathode end of test lines. Scanning electron microscopy is used to observe damage development, focused ion beam microscopy to observe the corresponding grain structure. Finite-element calculations of self-consistent current density and temperature distributions in the conductor are used to predict damage locations both for a continuum material and for simulated grain structures. Cross-section changes in the line give temperature variations leading to divergences in atomic flux. Regions of high flux divergence are favoured for electromigration damage, but the precise sites of damage are determined by the grain structure, as shown both in the experiment and in the modelling.

TRANSPORT CHARACTERISTICS IN c-AXIS La2-xSrxCuO4 (LSCO) SINGLE CRYSTALS

2005 ◽  
Vol 19 (01n03) ◽  
pp. 447-450
Author(s):  
SANG-JAE KIM ◽  
TAKESHI HATANO
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Critical Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Method ◽  
First Time ◽  
Small Voltage

c-axis micro-bridges of La 2-x Sr x CuO 4 ( LSCO ) single crystals were fabricated by the focused-ion-beam (FIB) etching method. Small rectangular LSCO pieces were fabricated by cutting and grinding single crystals of underdoped LSCO of x=0.09. The size of LSCO single crystals between electrodes was cut to 20×40μm2 in ab-plane by using the FIB etching method. Superconductor-insulator-superconductor (SIS) like-branch structures on I-V curves of the LSCO stacks were observed for the first time. The branch structures exhibited voltage jumps of several tens mV in the range of from 1.7 K to 5 K with temperature dependence. When the temperature is changed from 5 K to 1.7 K , the critical current and the next branch split into a few of small voltage jumps with the intervals of several mV in the range of from 0.1 mV and 2.0 mV .

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

Sub-Micron Selective Photoluminescence in Porous Si by Focused Ion Beam Implantation

1992 ◽  
Vol 281 ◽  
Author(s):  
A. J. Steckl ◽  
J. Xu ◽  
H. C. Mogul ◽  
S. Mogren
Keyword(s):  
Incubation Time ◽  
Focused Ion Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Porous Si ◽  
Strong Function ◽  
Si Substrates ◽  
Si Doping ◽  
Broad Beam ◽  
First Time

ABSTRACTThe effect of Si doping on the formation of stain-etched porous Si and its photoluminescent properties was studied. Porous Si is obtained by purely chemical etching of crystalline Si in a solution of HF:HNO3:H2O in the ratio of 1:3:5. We have observed that an incubation time (ti) exists between the insertion of Si into the solution and the onset of porous Si production. This incubation time was found to be a strong function of hole concentration in both n- and p-Si. In p-Si, the ti decreased rapidly with increasing conductivity, whereas for n-Si the opposite (but not as pronounced) trend was found to be the case. For example in (B-doped) p-Si, ti, is only ∼0.5 min for 250 (Ω-cm)−1 but increases to ∼ 5 min for 0.2 (Ω-cm)−1. In (P-doped) n-Si substrates ti was ∼ 8 min for 0.2 (Ω-cm)−1 increasing to ∼ 10 min for 7 (Ω-cm)−1. Photoluminescence (PL) measurements of the porous Si obtained on substrates of various conductivity (p and n) show similar spectra, namely a peak at around 1.94 eV with a full width at half-maximum (FWHM) of about 0.5 eV. Based on the ti difference, we have fabricated localized photoemitting porous Si patterns by Ga+ focused ion beam (FIB) implantation doping and B+ broad beam (BB) implantation doping of n-type Si. Using 30 kV FIB Ga+ implantation, sub-micron photoemitting patterns have been obtained for the first time.

Characterization of Plated Cu Thin Film Microstructures

1999 ◽  
Vol 564 ◽  
Author(s):  
L. M. Gignac ◽  
K. P. Rodbel ◽  
C. Cabral ◽  
P. C. Andricacos ◽  
P. M. Rice ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Grain Structure ◽  
Grain Structures ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Gaussian Fit ◽  
Cu Thin Film ◽  
Log Normal ◽  
Electron Imaging

AbstractElectroplated Cu was found to have a fine as-plated microstructure, 0.05 ± 0.03 μm, with multiple grains through the film thickness and evidence of twins and dislocations within grains. Over time at room temperature, the grains grew to greater than 1 μm in size. Studied as a function of annealing temperature, the recrystallized grains were shown to be 1.6 ± 1.0 μm in size, columnar and highly twinned. The grain growth was directly related to the time dependent decrease in sheet resistance. The initial grain structure was characterized using scanning transmission electron microscopy (STEM) from a cross-section sample prepared by a novel focused ion beam (FIB) and lift-out technique. The recrystallized grain structures were imaged using FIB secondary electron imaging. From these micrographs, the grain boundary structures were traced, and an image analysis program was used to measure the grain areas. A Gaussian fit of the log-normal distribution of grain areas was used to calculate the mean area and standard deviation. These values were converted to grain size diameters by assuming a circular grain geometry.

Focused Ion Beam Application in Solving RFIC Oscillation Problem

1998 ◽  
Author(s):  
S.P. Zhao ◽  
H.N. Ma ◽  
S.J. Fang ◽  
G.P. Goh ◽  
J. Wang
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Oscillation Problem ◽  
Modify Device ◽  
First Time ◽  
Rf Circuit

Abstract Focused Ion Beam (FIB) technique has been widely used to directly modify device functionality by adding ion-induced conductive lines and cutting signal traces with chemical enhance etching. However, in this work, FIB technique is employed to add a 15 ohm resistor to a RF circuit to solve its oscillation problem. After the modification, the oscillation problem is solved and the performance of the RF device is improved significantly. The successful FIB application of adding a defined resistor to modify a circuit is reported in this paper for the first time.

Optimization Based Geometric Modeling of Nano/Micro Scale Ion Milling of Organic Materials for Multidimensional Bioimaging

2010 ◽  
Vol 1 (3) ◽  
Author(s):  
Jing Fu ◽  
Sanjay Joshi
Keyword(s):  
Biological Samples ◽  
Geometric Modeling ◽  
Focused Ion Beam ◽  
Organic Materials ◽  
Ion Beam ◽  
Target Material ◽  
Ion Milling ◽  
Flexible Tool ◽  
Micro Scale ◽  
Simulation Based

Focused ion beam (FIB) instruments have recently started to be seen in applications to organic materials such as polymers and biological samples. FIB provides a novel tool for sectioning biological samples for electron microscope based imaging or microfabrication with environment friendly materials. The modeling of nano/micro scale geometry accurately sculptured by FIB milling is crucial for generating the milling plan and process control, and for computer simulation based prediction and visualization of the milled geometry. However, modeling of the milled geometry on compound materials, especially for high aspect ratio feature, is still difficult due to the complexity of target material, as well as multiple physical and chemical interactions involved. In this study, a comprehensive model of ion milling with organic targets is presented to address the challenges in using a simulation based approach. At each discrete point of the milled front, the depth is the dynamic result of aggregate interactions from neighboring areas, including physical sputtering and chemical reactions. Instead of determining the exact interactions, the parameters of the proposed model are estimated by studying a number of preliminary milling results followed by a nonlinear optimization model. This platform has been validated by milling different features on water ice in a cryogenic environment, and the simulation and experiment results show great consistency. With the proliferation of nanotechnology in biomedical and biomaterial domains, the proposed approach is expected to be a flexible tool for various applications involving novel and heterogeneous biological targets.

On radiation damage in FIB-prepared softwood samples measured by scanning X-ray diffraction

2015 ◽  
Vol 22 (2) ◽  
pp. 267-272 ◽  
Author(s):  
Selina Storm ◽  
Malte Ogurreck ◽  
Daniel Laipple ◽  
Christina Krywka ◽  
Manfred Burghammer ◽  
...  
Keyword(s):  
Cell Wall ◽  
Radiation Damage ◽  
Focused Ion Beam ◽  
Complex Geometry ◽  
Ion Beam ◽  
Wall Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Time ◽  
Interesting System

The high flux density encountered in scanning X-ray nanodiffraction experiments can lead to severe radiation damage to biological samples. However, this technique is a suitable tool for investigating samples to high spatial resolution. The layered cell wall structure of softwood tracheids is an interesting system which has been extensively studied using this method. The tracheid cell has a complex geometry, which requires the sample to be prepared by cutting it perpendicularly to the cell wall axis. Focused ion beam (FIB) milling in combination with scanning electron microscopy allows precise alignment and cutting without splintering. Here, results of a scanning X-ray diffraction experiment performed on a biological sample prepared with a focused ion beam of gallium atoms are reported for the first time. It is shown that samples prepared and measured in this way suffer from the incorporation of gallium atoms up to a surprisingly large depth of 1 µm.

Reduction of Whisker-Originated Short between W Polymetal and Contact Plug

2001 ◽  
Vol 670 ◽  
Author(s):  
Yasushi Akasaka ◽  
Hiroshi Suzuki ◽  
Yuji Yokoyama ◽  
Nobuaki Yasutake ◽  
Hitomi Yasutake ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Whisker Growth ◽  
Ion Beam ◽  
The Self ◽  
Cross Sectional ◽  
Gate Electrodes ◽  
High Temperature Processing ◽  
First Time

ABSTRACTWhisker-originated short in the self-aligned contact (SAC) W polymetal gate was directly observed for the first time. Short points between gate electrodes and poly-Si plugs in the test structure were identified by emission microscope and cross-sectional TEM samples of those points were made by using focused ion beam (FIB).Whiskers are formed during high-temperature processing such as LP-CVD SiN. We have proposed that NH3 de-oxidation step inserted in the SiN deposition sequence is effective for suppressing whisker growth. [1] In this study it was also confirmed that 600°C NH 3 pre-flow improved leakage current between gate electrode and contact plugs.

scholarly journals Depth distribution profile of martensite phase observed by transmission electron microscope in ion implanted metals

2014 ◽  
Vol 7 (1) ◽  
Author(s):  
Dwi Gustiono
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Depth Distribution ◽  
Ion Beam ◽  
Thin Foil ◽  
High Energy ◽  
Martensite Phase ◽  
Distribution Profile ◽  
Transmission Electron ◽  
Simulation Based

In this work, transmission electron microscopy (TEM) observation results from a depth distribution profile of the nano-martensite occuring in titanium implanted austenitic stainless steel is presented. The thickness of 200 keV high-energy ion implantation induced layer until 150 nm as calculated by the TRIM computer simulation based on the Monte-Carlo program. After the implantation, the specimens were attached to thin foil ring to be milled by focused ion beam (FIB). TEM observation on the ion implantation induced layer reveled that nano-martensite is distributed until80 nm under surface. the nano-martensite mostly nucleated at the region near the surface occurred the higher concentration gradient of implanted ion, namely higher stress concentration takes place so that this stress introduced due to the implanted ions act as a driving force for the transformation.

Sign in / Sign up

Export Citation Format

Share Document