Reduction of Whisker-Originated Short between W Polymetal and Contact Plug

2001 ◽  
Vol 670 ◽  
Author(s):  
Yasushi Akasaka ◽  
Hiroshi Suzuki ◽  
Yuji Yokoyama ◽  
Nobuaki Yasutake ◽  
Hitomi Yasutake ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Whisker Growth ◽  
Ion Beam ◽  
The Self ◽  
Cross Sectional ◽  
Gate Electrodes ◽  
High Temperature Processing ◽  
First Time

ABSTRACTWhisker-originated short in the self-aligned contact (SAC) W polymetal gate was directly observed for the first time. Short points between gate electrodes and poly-Si plugs in the test structure were identified by emission microscope and cross-sectional TEM samples of those points were made by using focused ion beam (FIB).Whiskers are formed during high-temperature processing such as LP-CVD SiN. We have proposed that NH3 de-oxidation step inserted in the SiN deposition sequence is effective for suppressing whisker growth. [1] In this study it was also confirmed that 600°C NH 3 pre-flow improved leakage current between gate electrode and contact plugs.

Substrate influence on the high-temperature annealing behavior of GaN: Si vs sapphire

2005 ◽  
Vol 892 ◽  
Author(s):  
David Pastor ◽  
Ramon Cuscó ◽  
Luis Artús ◽  
Enrique Iborra ◽  
Juan Jiménez ◽  
...  
Keyword(s):  
High Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Concentration ◽  
Annealing Behavior ◽  
Annealing Effects ◽  
Micron Diameter ◽  
Confocal Images ◽  
High Temperature Processing ◽  
Substrate Influence

AbstractWe have studied the effects of rapid thermal annealing at 1300°C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display a stained surface. Scanning electron microscopy and optical confocal images revealed the presence of crater-shaped inhomogeneities that develop around protruding nuclei with tipically 50 micron diameter. Energy dispersive x-ray microanalysis yields a high concentration of Si in the crater regions as well as non-stoichiometric concentrations of Ga and N, with an excess of N.Micro-Raman spectra obtained within the crater region exhibit Raman peaks associated with Si3N4 but no trace of GaN modes, while focused ion beam milling of this region leads to the accumulation of metallic Ga in the etched area. These results suggest that a substantial migration of Si from the substrate takes place during the annealing, which severely alters the material in the crater regions. Such annealing effects, which are not observed in GaN grown on sapphire, constitute a severe drawback for a widespread use of Si(111) substrates when high-temperature processing is required.

scholarly journals Thermoresistive properties of p-type 3C–SiC nanoscale thin films for high-temperature MEMS thermal-based sensors

RSC Advances ◽  
2015 ◽  
Vol 5 (128) ◽  
pp. 106083-106086 ◽  
Author(s):  
Toan Dinh ◽  
Hoang-Phuong Phan ◽  
Takahiro Kozeki ◽  
Afzaal Qamar ◽  
Takahiro Namazu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Glass Substrate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Crystalline ◽  
P Type ◽  
First Time ◽  
Si Wafer

We report for the first time the thermoresistive property of p-type single crystalline 3C–SiC (p-3C–SiC), which was epitaxially grown on a silicon (Si) wafer, and then transferred to a glass substrate using a Focused Ion Beam (FIB) technique.

Analysis of DC Failure in Advanced Memory Devices Using Nanoprobing and Scanning Capacitance Microscopy

2007 ◽  
Author(s):  
Jen-Lang Lue ◽  
Chin-Shun Lin ◽  
Atup Chiou ◽  
Hsuen-Cheng Liao ◽  
Hsienwen Liu ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Doping Profile ◽  
Memory Devices ◽  
Cross Sectional ◽  
Analysis Process ◽  
Leakage Path ◽  
Current Voltage

Abstract This paper discusses the failure analysis process of a DC failure using an in-FIB (Focused Ion Beam) nanoprobing technique with four probes and a scanning capacitance microscope (SCM) in advanced DRAM devices. Current-Voltage (I-V) curves measured by the nanoprobing technique indicate the curve of the failed device is different from that of the normal device. The failed device causes a high leakage current in the test. The cross-sectional 2-D doping profile of SCM verifies the region of the P-Well has shifted to create a leakage path that causes this failure.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

Comparison of Focused Ion Beam and Conventional Techniques on Tem Specimen Preparation of Metal-Ceramic Interfaces

1998 ◽  
Vol 4 (S2) ◽  
pp. 860-861 ◽  
Author(s):  
A. Ramirez de Arellano López ◽  
W.-A. Chiou ◽  
K. T. Faber
Keyword(s):  
Focused Ion Beam ◽  
Ceramic Coating ◽  
Steel Substrate ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Inhomogeneous Materials ◽  
Cross Sectional ◽  
Fine Grain ◽  
Basic Industry ◽  
Coated Surface

The results of TEM analyses of materials are critically dependent on the quality of the sample prepared. Although numerous techniques have been developed in the last two decades, differential thinning of inhomogeneous materials remains a serious problem. Recently, focused ion beam (FIB) technique has been introduced for cross-sectional sample preparation for TEM and SEM.A novel system for depositing a fine-grain (∼ 200 nm) ceramic coating on a metal surface via a patent pending Small-Particle Plasma Spray (SPPS) technique has been developed at the Basic Industry Research Laboratory of Northwestern University. To understand the properties of the coated surface, the ceramic/metal interface and the microstructure of the ceramic coating must be investigated. This paper presents a comparison of the microstructure of an A12O3 coating on a mild steel substrate prepared using conventional and FEB techniques.

Cross-sectional microanalysis for tracking the effect of solvent on the morphological evaluation of PLA/AgNWs bionanocomposties

2021 ◽  
pp. 096739112110230
Author(s):  
Meltem Sezen ◽  
Busra Tugba Camic
Keyword(s):  
Focused Ion Beam ◽  
Silver Nanowires ◽  
Low Cost ◽  
Ion Beam ◽  
Lower Surface ◽  
Polymer Matrices ◽  
Elemental Distribution ◽  
Medical Sciences ◽  
Surface Area Ratio ◽  
Cross Sectional

The emphasis of biocompatible polymer applications in medical sciences and biotechnology has remarkably increased. Developing new low-cost, low-toxicity and lightweight composite forms of biopolymers has become even more attractive since the addition of new species into polymer matrices assist to improve biomedical activities of such materials to a higher extend. Developments in nanoscience and nanotechnology recently contribute to controlled fabrication and ultraprecise diagnosis of such materials. This study concerns the observation of solution processing effects in the fabrication of porous PLA/AGNWs bionanocomposite coatings using electron and ion processing based serial cross-sectioning and high-resolution imaging. The nanostructuring and characterization were both performed in a focused ion-beam-scanning electron microscope (FIB-SEM) platform. HR-SEM imaging was conducted on-site to track solvent based morphological property alterations of PLA and PLA/AgNWs structures. Simultaneous SEM-EDS analyses revealed the elemental distribution and the chemical composition along the cross-sectioned regions of the samples. Accordingly, it was observed that, in case of acetone dissolved materials, both pristine PLA and PLA/AgNWs samples sustained their foamy structure. When chloroform was used as the solvent, the porosity of the polymer matrices was less and the resulting structure was found to be denser than samples dissolved in acetone with a lower surface area ratio inside the material. This can be attributed to the rapid volatilization of acetone compared to chloroform, and hence the formation of interconnected pore network. For both nanocomposite biopolymers dissolved in acetone and chloroform, silver nanowires were homogeneously distributed throughout PLA matrices.

Sign in / Sign up

Export Citation Format

Share Document