Characterization Of Bulk, Polycrystalline Indium Nitride Grown At Sub-Atmospheric Pressures

1997 ◽  
Vol 482 ◽  
Author(s):  
Jeffrey S. Dycka ◽  
Kathleen Kash ◽  
Kwiseon Kim ◽  
Walter R. L Lambrecht ◽  
Cliff C. Hayman ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Molecular Nitrogen ◽  
Indium Nitride ◽  
Plasma Source ◽  
Lattice Parameter ◽  
Orbital Method ◽  
Full Potential ◽  
Plasma Synthesis ◽  
X Ray Diffraction ◽  
Phonon Modes

AbstractPolycrystalline, wurtzitic indium nitride was synthesized by saturating indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Two types of growth were observed: 1) small amounts of indium nitride crystallized from the melt during cooling and 2) hexagonal platelets formed adjacent to the In metal source on the crucible sides. The mechanism of this latter growth is not established, but may involve transport of indium as a liquid film. The crystals were characterized by electron diffraction, X-ray diffraction, elemental analysis, scanning electron microscopy, and Raman spectroscopy. Lattice parameter and Raman active phonon modes are reported and compared with calculations based on the full-potential linear muffin-tin orbital method (FP-LMTO).

scholarly journals Growth of Oriented Thick Films of Gallium Nitride from the Melt

1999 ◽  
Vol 4 (S1) ◽  
pp. 227-232 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Kathleen Kash ◽  
Michael T. Grossner ◽  
Cliff C. Hayman ◽  
Alberto Argoitia ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Microwave Plasma ◽  
Thick Films ◽  
Attractive Alternative ◽  
Plasma Synthesis ◽  
Atomic Nitrogen ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
X Ray

While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 1010 cm−2. The E2 Raman active phonon modes were observed in the GaN films.

Growth of Oriented Thick Films of Gallium Nitride From the Melt

1998 ◽  
Vol 537 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Kathleen Kash ◽  
Michael T. Grossner ◽  
Cliff C. Hayman ◽  
Alberto Argoitia ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Microwave Plasma ◽  
Thick Films ◽  
Attractive Alternative ◽  
Plasma Synthesis ◽  
Atomic Nitrogen ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
X Ray

AbstractWhile significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 1010 cm-2. The E2 Raman active phonon modes were observed in the GaN films.

X-ray powder diffraction data for indium nitride

1999 ◽  
Vol 14 (4) ◽  
pp. 258-260 ◽  
Author(s):  
W. Paszkowicz
Keyword(s):  
Diffraction Pattern ◽  
Powder Diffraction ◽  
Diffraction Data ◽  
Microwave Plasma ◽  
Indium Nitride ◽  
Plasma Source ◽  
Unit Cell ◽  
Powder Diffraction Data ◽  
Calculated Density ◽  
X Ray

X-ray powder diffraction pattern for InN synthesized using a microwave plasma source of nitrogen is reported. The data were obtained with the help of an automated Bragg-Brentano diffractometer using Ni-filtered CuKα radiation. The lattice parameters for the wurtzite-type unit cell are ao=3.5378(1) Å, co=5.7033(1) Å. The calculated density is 6.921±0.002 g/cm3.

The Initial Stages of Plasma Synthesis of Diamond Films

1988 ◽  
Vol 129 ◽  
Author(s):  
R. Meilunas ◽  
M.S. Wong ◽  
K. Sheng ◽  
T.P. Ong ◽  
R.P.H. Chang
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Plasma Synthesis ◽  
X Ray Diffraction ◽  
Diamond Nucleation ◽  
X Ray ◽  
Deposition Parameters ◽  
Starting Conditions ◽  
Size And Morphology

ABSTRACTThe effects of plasma starting conditions on the initial stages of diamond nucleation and growth in a microwave plasma have been studied as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through various analytical measurements. The diamond films are characterized with Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. Finally, methods are described for reproducibly controlling the grain size and morphology of the diamond films for tribological and abrasive applications.

Mechanical, spin polarized electronic and magnetic properties of TmX(X = Cu, Ag): First principle study

2015 ◽  
Vol 29 (03) ◽  
pp. 1550007 ◽  
Author(s):  
Satish Chand ◽  
R. P. Singh ◽  
A. Govindan ◽  
S. K. Singh
Keyword(s):  
Magnetic Behavior ◽  
Optimization Method ◽  
Lattice Parameter ◽  
Orbital Method ◽  
Full Potential ◽  
Pressure Derivative ◽  
Augmented Plane Wave ◽  
Spin Polarized ◽  
Derivative Formula ◽  
High Spin Polarization

To study the mechanical, spin polarized electronic and magnetic behavior of TmX (X = Cu, Ag) , full-potential linear augmented plane wave plus local orbital method has been used. The lattice parameter (a0), bulk modulus (B0) and its first-order pressure derivative [Formula: see text] have been calculated using optimization method. Mechanical properties have been studied in terms of elastic constants (Cij), Young's modulus (Y), shear modulus (G) and Poisson's ratio (v) at ambient temperature and pressure which are found to be consistent with available experimental/theoretical values. Electronic properties have been investigated in terms of band structure and density of state histograms for spin up and spin down channel. Electronic and magnetic behavior of TmX shows that studied materials are metallic ferromagnets with high spin polarization in which Tm-f state electrons are contributed mainly.

Nonthermal Microwave Plasma Synthesis of Crystalline Titanium Oxide & Titanium Nitride Nanoparticles

1991 ◽  
Vol 249 ◽  
Author(s):  
Prabhjot Mehta ◽  
A. K. Singh ◽  
A. I. Kingon
Keyword(s):  
Titanium Nitride ◽  
Gas Phase ◽  
Titanium Oxide ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Molecular Nitrogen ◽  
Plasma Synthesis ◽  
Titanium Tetraisopropoxide ◽  
Low Oxygen ◽  
Nitrogen Gas

ABSTRACTWe report the nonthermal synthesis of ultrafine crystalline nanoparticles of titanium oxide and titanium nitride. The nanoparticles are formed by gas phase reactions between precursor gases dissociated in the microwave plasma. For the production of titanium nitride, titanium tetraisopropoxide (TTIP) and ammonia or nitrogen precursor gases are used. For titanium oxide production TTIP and oxygen are used as precursor gases. In both cases ultrahigh purity argon serves as a carrier gas and diluent.Transmission electron microscopy (TEM) revealed that the titanium nitride powders so formed were either cubic (TiN) or tetragonal (Ti2N) depending on the operational conditions, particularly the relative nitrogen gas flow rates. Ammonia gas was found to be a much more reactive nitrogen source than molecular nitrogen gas. For the titanium oxide growth an excess of oxygen was utilized to achieve TiO2. Powders collected from the gas phase corresponded to the rutile (tetragonal) phase. However, powders collected from the cavity walls corresponded to the high temperature and pressure (orthorhombic) 13-TiO2. There was also evidence of a polytypically modulated phase of TiO2, with the observed c-periodicity double the parent c-periodicity of the rutile phase. Using a low oxygen flow rate during powder formation led to the formation of orthorhombic Ti3O5 “powders”. The powders were easily sinterable by in situ electron beam annealing in the electron microscope, with an estimated temperature of around 550°C. This is much lower than the temperatures normally required to sinter these materials.

Planar Force-constant Method for Lattice Dynamics of Cubic InN

2000 ◽  
Vol 639 ◽  
Author(s):  
H. W. Leite Alves ◽  
J. L. A. Alves ◽  
L. M. R. Scolfaro ◽  
J. R. Leite
Keyword(s):  
Lattice Dynamics ◽  
Density Functional ◽  
Phonon Dispersion ◽  
Indium Nitride ◽  
Full Potential ◽  
Phonon Modes ◽  
Functional Theory ◽  
Augmented Plane Wave ◽  
The Density Functional Theory ◽  
Good Agreement

ABSTRACTUsing the density-functional theory within the Full Potential Linear Augmented Plane-Wave (FP-LAPW) method, we have calculated, in this work, the equation of state, the effective charges and the phonon dispersion along [100] and [111] directions for the cubic Indium Nitride(c-InN), including hydrostatic strains dependence. A good agreement with the micro-Raman scattering experiment is obtained for the phonon modes at ã. Our results show that the apparent divergence between the known experimental results is a consequence of hydrostatic effects on the sample due to differences of the used Raman methods.

scholarly journals MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 474-480 ◽  
Author(s):  
Sylvia G. Spruytte ◽  
Christopher W. Coldren ◽  
Ann F. Marshall ◽  
Michael C. Larson ◽  
James S. Harris
Keyword(s):  
Quantum Wells ◽  
Molecular Nitrogen ◽  
Nitrogen Concentration ◽  
Plasma Source ◽  
Lattice Parameter ◽  
Nitrogen Plasma ◽  
Group V ◽  
Mbe Growth ◽  
Group Iii ◽  
Nitrogen Concentrations

Nitride-Arsenide materials were grown by molecular beam epitaxy (MBE) using a radio frequency (rf) nitrogen plasma. The plasma conditions that maximize the amount of atomic nitrogen versus molecular nitrogen were determined using the emission spectrum of the plasma. Under constant plasma source conditions and varying group III flux, the nitrogen concentration in the film is inversely proportional to the group III flux (i. e. the nitrogen sticking coefficient is unity). The relationship between nitrogen concentration in the film and lattice parameter of the film is not linear for nitrogen concentrations above 2.9 mole % GaN, indicating that some nitrogen is incorporated on other locations than the group V lattice sites. For films with these higher nitrogen concentrations, XPS indicates that the nitrogen exists in two configurations: a Gallium-Nitrogen bond and another type of nitrogen complex in which nitrogen is less strongly bonded to Gallium atoms. Annealing removes this nitrogen complex and allows some of the nitrogen to diffuse out of the film. Annealing also improves the crystal quality of GaAsN quantum wells.

Synthesis of bulk polycrystalline indium nitride at subatmospheric pressures

1999 ◽  
Vol 14 (6) ◽  
pp. 2411-2417 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Kathleen Kash ◽  
Cliff C. Hayman ◽  
Alberto Argoitia ◽  
Michael T. Grossner ◽  
...  
Keyword(s):  
High Pressure ◽  
Microwave Plasma ◽  
Indium Nitride ◽  
X Ray Diffraction ◽  
Plasma Sources ◽  
Metal Source ◽  
X Ray ◽  
Bulk Growth ◽  
Potential Alternative ◽  
Foreign Substrate

Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium with nitrogen from microwave plasma sources. The structure was confirmed by x-ray diffraction, electron diffraction, and elemental analysis. Two types of growth were observed: (i) dendritic crystals on the original melt surface, and (ii) hexagonal platelets adjacent to the In metal source on the upper edge of the crucible. The method does not involve a foreign substrate to initiate growth and is a potential alternative to the high-pressure techniques normally associated with bulk growth of indium nitride. The lattice parameters were a = 3.5366 ± 0.0005 Å and c = 5.7009 ± 0.0005 Å, with c/a = 1.612 ± 0.0005.

X-Ray Diffraction Analysis Of Strain And Mosaic Structure In (001) Oriented Homoepitaxial Diamond Films

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Brock Alexander ◽  
Pehr E. Pehrsson ◽  
David Black ◽  
James E. Butler
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Film Deposition ◽  
Mosaic Structure ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
High Pressure High Temperature

AbstractHomoepitaxial diamond films were grown on (001) oriented high pressure, high temperature type lb diamond by microwave plasma-assisted chemical vapor deposition to thicknesses of 27–48 μm. Substrates were polished off-axis 5.5° ±0.5° in the [100] direction prior to film deposition. Some of the diamond films developed tensile stress sufficiently large to result in cracking on { 111 } cleavage planes, while other films exhibited compressive stress. The strain and mosaic structure were measured with seven crystal x-ray diffraction. This characterization tool allowed the separation of misorientation effects from those of lattice parameter variation. Films exhibited smaller (˜88 ppm) and larger (˜27 ppm) perpendicular lattice parameters relative to the HPHT substrates. A cross-sectional approach for probing strain in diamond films with micro-Raman analysis was used to show stress distributions (˜100–300 MPa) through the thickness of the film.

Sign in / Sign up

Export Citation Format

Share Document