scholarly journals Detection and Characterization of Highly Effective Schools in the Autonomous Community of the Basque Country Using Contextualized Cross- Sectional Attainment Models and Hierarchical Linear Models

2014 ◽  
Vol 27 ◽  
pp. 37-61 ◽  
Author(s):  
Luis Joaristi ◽  
Luis Lizasoain ◽  
Verónica Azpillaga
Keyword(s):  
Effective Schools ◽  
Linear Models ◽  
Basque Country ◽  
Hierarchical Linear Models ◽  
Autonomous Community ◽  
Cross Sectional ◽  
Highly Effective

scholarly journals Criterios y modelos estadísticos de eficacia escolar

2020 ◽  
Vol 38 (2) ◽  
pp. 311-327
Author(s):  
Luis Lizasoain Hernández
Keyword(s):  
Effective Schools ◽  
School Effectiveness ◽  
Linear Models ◽  
Basque Country ◽  
Outcome Variable ◽  
Multilevel Regression ◽  
School Effectiveness Research ◽  
Regression Techniques ◽  
Pais Vasco ◽  
Selection Of

El objetivo de este artículo es presentar los criterios y modelos estadísticos empleados en un estudio de eficacia escolar desarrollado en la Comunidad Autónoma del País Vasco empleando como variable criterio los resultados en matemáticas, comprensión lectora en lengua castellana y en lengua vasca, resultantes de las evaluaciones de Diagnóstico aplicadas en cinco años. Se definen cuatro criterios de eficacia escolar: puntuaciones extremas, residuos extremos, crecimiento de puntuaciones y crecimiento de residuos. Para ello se han aplicado técnicas de regresión multinivel empleando modelos jerárquicos lineales. Los resultados permiten una selección de centros tanto de alta como de baja eficacia que se basa en cuatro enfoques distintos y complementarios de la eficacia (o ineficacia) escolar. The aim of this paper is to present the statistical criteria and models used in a school effectiveness research carried out in the Basque Country Autonomous Community using as outcome variable the mathematics, spanish language and basque language scores. These scores come from the Diagnosis Assessments applied for five years. Four school effectiveness criteria are defined: extreme scores, extreme residuals, scores growth and residuals growth. Multilevel regression techniques have been applied using hierarchical linear models (HLM). Results have permitted a selection of both high and low effective schools based on four different and complementary school effectiveness approaches.

The perception of stakeholders regarding the outcomes achieved by schools with high or low levels of effectiveness and high numbers of immigrant students

2021 ◽  
pp. 136548022110568
Author(s):  
Nahia Intxausti-Intxausti ◽  
Eider Oregui-González ◽  
Verónica Azpillaga-Larrea
Keyword(s):  
Immigrant Students ◽  
Collaborative Leadership ◽  
Basque Country ◽  
Discussion Groups ◽  
Autonomous Community ◽  
Structured Interviews ◽  
Floor Effect ◽  
Cross Sectional ◽  
Effect Model ◽  
Low Levels

The aim of this study was to characterize those schools in the Autonomous Community of the Basque Country (Spain) with high numbers of immigrant students in accordance with their effectiveness level (high or low). Three effectiveness criteria (scores, residuals, and times) were used to select the schools, resulting in three models: a ceiling or floor effect model, a contextualized cross-sectional model, and a contextualized longitudinal model. Of the 524 initial schools analyzed, 7 were found to have high or low effectiveness levels and higher-than-average immigration levels. Following the selection, the discourses of 40 education stakeholders were analyzed through semi-structured interviews and discussion groups. The results highlight the strong sense of vulnerability felt in some schools, as well as the general conviction that greater support, commitment, and stable, collaborative leadership by the management team and inspectorate would contribute to improving effectiveness.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Effects of Momentary Affect on Satisfaction Judgments

2020 ◽  
Vol 41 (2) ◽  
pp. 61-67
Author(s):  
Marko Tončić ◽  
Petra Anić
Keyword(s):  
Linear Models ◽  
Time Frame ◽  
Hierarchical Linear Models ◽  
Curvilinear Relationship ◽  
Positive And Negative Affect ◽  
Transient Events ◽  
Time Frames ◽  
Events Data ◽  
Level Satisfaction ◽  
Source Of Information

Abstract. This study aims to examine the effect of affect on satisfaction, both at the between- and the within-person level for momentary assessments. Affect is regarded as an important source of information for life satisfaction judgments. This affective effect on satisfaction is well established at the dispositional level, while at the within-person level it is heavily under-researched. This is true especially for momentary assessments. In this experience sampling study both mood and satisfaction scales were administered five times a day for 7 days via hand-held devices ( N = 74 with 2,122 assessments). Several hierarchical linear models were fitted to the data. Even though the amount of between-person variance was relatively low, both positive and negative affect had substantial effects on momentary satisfaction on the between- and the within-person level as well. The within-person effects of affect on satisfaction appear to be more pronounced than the between-person ones. At the momentary level, the amount of between-person variance is lower than in studies with longer time-frames. The affect-related effects on satisfaction possibly have a curvilinear relationship with the time-frame used, increasing in intensity up to a point and then decreasing again. Such a relationship suggests that, at the momentary level, satisfaction might behave in a more stochastic manner, allowing for transient events/data which are not necessarily affect-related to affect it.

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