Footprint Analysis of CMOS Compatible Silicon-on-Insulator based Photonic Waveguides

2020 ◽  
Vol 12 ◽  
Author(s):  
Veer Chandra ◽  
Rakesh Ranjan
Keyword(s):  
Silicon On Insulator ◽  
Propagation Loss ◽  
Comsol Multiphysics ◽  
The Finite Element Method ◽  
Propagation Length ◽  
Footprint Analysis ◽  
Photonic Waveguides ◽  
Cmos Compatible ◽  
The Impact ◽  
Slot Waveguides

Aim: Establish the efficient footprint size, i.e., the total substrate width of photonic waveguides (Ridge, Rib, and Slot) under the fundamental mode propagation constraints. Objective: By varying the total substrate width for all photonic waveguides (Ridge, Rib, and Slot) with respect to four major waveguide parameters, namely effective refractive index, propagation loss, propagation length, and confinement percentage, the converged values of these waveguide parameters have to be obtained. Methods: The finite element method (FEM) based simulations, using the COMSOL Multiphysics, have been used to study the modal characteristics of photonic waveguides to achieve their efficient footprint size. Results: The total substrate widths have been obtained for the all four parameters and considering the impact of all these waveguide parameters simultaneously, the efficient total substrate width have been recognized as 2500 nm, 4000 nm, and 3000 nm, respectively for Ridge, Rib, and Slot waveguides. Conclusion: The efficient waveguide footprints, i.e., the total substrate widths for the three photonic waveguides, namely Ridge, Rib and Slot waveguides have been established.

scholarly journals Designing Mid-Infrared Gold-Based Plasmonic Slot Waveguides for CO2-Sensing Applications

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2669
Author(s):  
Parviz Saeidi ◽  
Bernhard Jakoby ◽  
Gerald Pühringer ◽  
Andreas Tortschanoff ◽  
Gerald Stocker ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Propagation Loss ◽  
Asymmetric Structure ◽  
Free Standing ◽  
Propagation Length ◽  
Mid Infrared ◽  
Sensing Applications ◽  
A Value ◽  
Standing Structure ◽  
Slot Waveguides

Plasmonic slot waveguides have attracted much attention due to the possibility of high light confinement, although they suffer from relatively high propagation loss originating from the presence of a metal. Although the tightly confined light in a small gap leads to a high confinement factor, which is crucial for sensing applications, the use of plasmonic guiding at the same time results in a low propagation length. Therefore, the consideration of a trade-off between the confinement factor and the propagation length is essential to optimize the waveguide geometries. Using silicon nitride as a platform as one of the most common material systems, we have investigated free-standing and asymmetric gold-based plasmonic slot waveguides designed for sensing applications. A new figure of merit (FOM) is introduced to optimize the waveguide geometries for a wavelength of 4.26 µm corresponding to the absorption peak of CO2, aiming at the enhancement of the confinement factor and propagation length simultaneously. For the free-standing structure, the achieved FOM is 274.6 corresponding to approximately 42% and 868 µm for confinement factor and propagation length, respectively. The FOM for the asymmetric structure shows a value of 70.1 which corresponds to 36% and 264 µm for confinement factor and propagation length, respectively.

scholarly journals Reduction in Crosstalk Using Uniform Germanium Strips for Dense Integration of Photonic Waveguides

2021 ◽  
Author(s):  
Veer Chandra ◽  
Dablu Kumar ◽  
Rakesh Ranjan
Keyword(s):  
Integrated Circuit ◽  
Silicon On Insulator ◽  
Current Work ◽  
Coupling Length ◽  
Photonic Integration ◽  
Polarization Splitter ◽  
Photonic Integrated Circuit ◽  
Photonic Switches ◽  
Photonic Waveguides ◽  
The Impact

Abstract The requirement of low crosstalk between the neighboring waveguides should be considered essentially, in order to achieve the compact photonic integrated circuit (PIC), which includes photonic waveguides. Literature shows that the lower crosstalk can be realized by using the silicon-on-insulator (SOI) based waveguide, having an appropriate separation between them. The current work is focused on reducing the waveguide separation to further improve the photonic integration over the PICs. This has been achieved by inserting the germanium strips between the photonic waveguides. The investigations of the impact of variations in heights and widths of germanium strip have demonstrated that the crosstalk can be reduced by a significant amount, which provides noteworthy improvement in coupling length. The maximum coupling lengths of 81578 µm, 67099 µm, and 66810 µm have been achieved at their respective end-to-end separations of 300 nm, 250 nm, and 200 nm, and their corresponding minimum crosstalk values have been noted as -29.40 dB, -27.71 dB, and − 27.70 dB. Moreover, the analysis to realize the coupling length for Ge-strip, have been compared with the Si-, and SiN-strips. The approach presented in the current work can be utilized for the design of many compact photonic applications, such as polarization splitter, integrated photonic switches, etc.

scholarly journals Theoretical Analysis of On-chip Vertical Hybrid Plasmonic Nanograting

2021 ◽  
Author(s):  
Mandeep Singh
Keyword(s):  
Numerical Simulation ◽  
Plasmonic Waveguide ◽  
Propagation Loss ◽  
Optical Confinement ◽  
Propagation Length ◽  
3D Finite Element ◽  
Cmos Compatible ◽  
On Chip ◽  
3D Finite Element Method ◽  
Low Dispersion

Abstract a CMOS compatible photonic-plasmonic waveguide with nanoscale optical confinement has been proposed for the infrared (IR)-band applications. The design is based on the multilayer hybrid plasmonic waveguide (Si-SiO2-Au) structure. The 3D-finite element method (FEM) numerical simulation of single slot HPWG confirms 2.5 dB/cm propagation loss and 15 um− 2 confined intensity. Moreover, its application as dual-slot nanograting is studied which shows better propagation length and ultra-low dispersion near the 1550 nm wavelength. Hence, proposed low-dispersion design is suitable for future on-chip nanophotonic components in the IR band.

scholarly journals CMOS compatible horizontal nanoplasmonic slot waveguides TE-pass polarizer on silicon-on-insulator platform

2013 ◽  
Vol 21 (10) ◽  
pp. 12790 ◽  
Author(s):  
Ying Huang ◽  
Shiyang Zhu ◽  
Huijuan Zhang ◽  
Tsung-Yang Liow ◽  
Guo-Qiang Lo
Keyword(s):  
Silicon On Insulator ◽  
Cmos Compatible ◽  
Slot Waveguides

scholarly journals Design of Surface Plasmon Nanolaser Based on MoS2

2018 ◽  
Vol 8 (11) ◽  
pp. 2110 ◽  
Author(s):  
Litu Xu ◽  
Fang Li ◽  
Lai Wei ◽  
Jianxin Zhou ◽  
Shuai Liu
Keyword(s):  
High Field ◽  
Electric Field Distribution ◽  
Propagation Loss ◽  
Comsol Multiphysics ◽  
Lasing Threshold ◽  
Optimal Parameters ◽  
The Finite Element Method ◽  
Low Loss ◽  
Low Threshold ◽  
Simulation Results

The paper has proposed a new structure based on MoS2. The electric field distribution, the locality and the loss of the mode, and the threshold under different geometric shapes and parameters are investigated using COMSOL Multiphysics software, based on the finite element method. The different influenced degree of each component is also analyzed. Simulation results reveal that this kind of nanolaser has a low loss and high field confinement ability, the radius of CdS and Ag make a major contribution to the low loss and low threshold, and field confinement ability is mainly affected by the height of air gap. Under optimal parameters, effective propagation loss is only 0.00013, and the lasing threshold can be as low as 0.11 μm−1. The results provide theory and technique support to the field of new nanolaser design.

An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET

2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra
Keyword(s):  
Analytical Model ◽  
Surface Potential ◽  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Junction Depth ◽  
Short Channel ◽  
Soi Mosfet ◽  
Minimum Surface ◽  
Recessed Channel ◽  
The Impact

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.

scholarly journals The effect of the outlet angle β2 on the thermomechanical behavior of a centrifugal compressor blade

2020 ◽  
Vol 29 (1) ◽  
pp. 1-8
Author(s):  
Ahmed Allali ◽  
Sadia Belbachir ◽  
Ahmed Alami ◽  
Belhadj Boucham ◽  
Abdelkader Lousdad
Keyword(s):  
Mechanical Behavior ◽  
Centrifugal Compressor ◽  
Three Dimensional ◽  
Complex Form ◽  
Compressor Blade ◽  
Stress Fields ◽  
The Finite Element Method ◽  
Mechanical Fatigue ◽  
Outlet Angle ◽  
The Impact

AbstractThe objective of this work lies in the three-dimensional study of the thermo mechanical behavior of a blade of a centrifugal compressor. Numerical modeling is performed on the computational code "ABAQUS" based on the finite element method. The aim is to study the impact of the change of types of blades, which are defined as a function of wheel output angle β2, on the stress fields and displacements coupled with the variation of the temperature.This coupling defines in a realistic way the thermo mechanical behavior of the blade where one can note the important concentrations of stresses and displacements in the different zones of its complex form as well as the effects at the edges. It will then be possible to prevent damage and cracks in the blades of the centrifugal compressor leading to its failure which can be caused by the thermal or mechanical fatigue of the material with which the wheel is manufactured.

scholarly journals Manufacturing, Characterisation and Mechanical Analysis of Polyacrylonitrile Membranes

Polymers ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 2378
Author(s):  
Mertol Tüfekci ◽  
Sevgi Güneş Durak ◽  
İnci Pir ◽  
Türkan Ormancı Acar ◽  
Güler Türkoğlu Demirkol ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Main Idea ◽  
Mechanical Analysis ◽  
Operating Conditions ◽  
Load Carrying Capacity ◽  
The Finite Element Method ◽  
Load Carrying ◽  
The Impact ◽  
Static Behaviour ◽  
Modelling Process

To investigate the effect of polyvinylpyrrolidone (PVP) addition and consequently porosity, two different sets of membranes are manufactured, since PVP is a widely used poring agent which has an impact on the mechanical properties of the membrane material. The first set (PAN 1) includes polyacrylonitrile (PAN) and the necessary solvent while the second set (PAN 2) is made of PAN and PVP. These membranes are put through several characterisation processes including tensile testing. The obtained data are used to model the static behaviour of the membranes with different geometries but similar loading and boundary conditions that represent their operating conditions. This modelling process is undertaken by using the finite element method. The main idea is to investigate how geometry affects the load-carrying capacity of the membranes. Alongside membrane modelling, their materials are modelled with representative elements with hexagonal and rectangular pore arrays (RE) to understand the impact of porosity on the mechanical properties. Exploring the results, the best geometry is found as the elliptic membrane with the aspect ratio 4 and the better RE as the hexagonal array which can predict the elastic properties with an approximate error of 12%.

Resistless Patterning of Magnetic Storage Media Using Ion Projection Structuring

2001 ◽  
Vol 705 ◽  
Author(s):  
A. Dietzel ◽  
R. Berger ◽  
H. Grimm ◽  
C. Schug ◽  
W. H. Bruenger ◽  
...  
Keyword(s):  
Process Development ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Magnetic Storage ◽  
Magnetic Islands ◽  
Superlattice Structure ◽  
Head Positioning ◽  
Out Of Plane ◽  
Set Up ◽  
The Impact

AbstractCo/Pt thin film multilayers with strong perpendicular anisotropy and out-of-plane coercivities of 5-11 kOe were magnetically altered in areas of local ion beam interaction. The ion irradiations were performed by ion projection through silicon stencil masks fabricated by silicon on insulator (SOI) membrane technology. The ion projector at the Fraunhofer Institute for Silicon Technology (ISiT) was operated at 73 keV ion energy and with a 8.7- fold demagnification. After exposure to 3 × 1014Ar+/ cm2 magnetic islands smaller than 100 nm in diameter were resolved in the Co/Pt multilayersby means of magnetic force microscopy. The impact of different ion species (He+, Ar+ and Xe+) and ion energies (10 – 200 keV) on the multilayer structure was evaluated using Monte Carlo simulations. The ballistic interface intermixing was used to predict magnetic coercivity changes for various irradiation conditions. The simulations revealed that with 73 keV Ar+ and Xe+ ions the irradiation dose could be reduced by a factor of 100 and 400 respectively in comparison to 73 keV He+which was verified in the experiments. X-ray reflectivity measurements confirmed that the Co/Pt superlattice structure is slightly weakened during the irradiation and that the surface smoothness of the media is preserved. Using the Ion Projection Process Development Tool (PDT) at IMS-Vienna concentric data tracks including head positioning servo informations were patterned onto a 1” IBM microdrive™ glass disk which was coated with Co/Pt multilayers. In a single exposure step several tracks within an exposure field of 17 mm in diameter were structured by 2 × 1015He+/ cm2 at 45 keV using a 4- fold demagnification set-up.

An Investigation of the Distribution of Electric Potential and Space Charge in a Silicon Nanowire

2014 ◽  
Vol 69 (10-11) ◽  
pp. 597-605 ◽  
Author(s):  
A. Wesam Al-Mufti ◽  
Uda Hashim ◽  
Md. Mijanur Rahman ◽  
Tijjani Adam
Keyword(s):  
Finite Element Method ◽  
Space Charge ◽  
Electric Potential ◽  
Silicon Nanowire ◽  
Electrical Potential ◽  
Comsol Multiphysics ◽  
The Finite Element Method ◽  
Simulation Experiments ◽  
Different Dimensions

AbstractThe distribution of electric potential and space charge in a silicon nanowire has been investigated. First, a model of the nanowire is generated taking into consideration the geometry and physics of the nanowire. The physics of the nanowire was modelled by a set of partial differential equations (PDEs) which were solved using the finite element method (FEM). Comprehensive simulation experiments were performed on the model in order to compute the distribution of potential and space charge. We also determined, through simulation, how the characteristic of the nanowire is affected by its dimensions. The characterization of the resulting nanowire, calculated by COMSOL Multiphysics, shows different dimensions and their effect on space charge and electrical potential

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