scholarly journals Characterization and TCAD Simulation of 90nm Technology PMOS Transistor under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement

2012 ◽  
Author(s):  
R. Llido ◽  
A. Sarafianos ◽  
O. Gagliano ◽  
V. Serradeil ◽  
V. Goubier ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Computer Aided Design ◽  
Laser Stimulation ◽  
Modeling Technology ◽  
Physical Simulations ◽  
Complex Circuits ◽  
Aided Design ◽  
Long Channel ◽  
Pmos Transistor

Abstract This study responds to our need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus it is mandatory to understand the behavior of elementary devices under laser stimulation, in order to model and anticipate the behavior of more complex circuits. This paper characterizes and analyses effects induced by a static photoelectric laser on a 90 nm technology PMOS transistor. Comparisons between currents induced in short or long channel transistors for both ON and OFF states are made. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses. These physical simulations give a physical insight of carriers generation and charge transport phenomena in the devices.

Technology Computer-Aided Design-Based Simulation Program with Integrated Circuit Emphasis Model for Back-Channel-Etched Thin-Film Transistors with Floating Metal Components

2020 ◽  
Vol 20 (11) ◽  
pp. 7181-7186
Author(s):  
Kihwan Kim ◽  
Myungeon Kim ◽  
Hyunguk Cho ◽  
Youngmi Cho ◽  
Yongjo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuit ◽  
Thin Film Transistors ◽  
Computer Aided Design ◽  
Simulation Program ◽  
Computer Aided ◽  
Aided Design ◽  
Long Channel ◽  
Active Channel ◽  
Tcad Simulations

We report thin-film transistors (TFTs) with floating metal using a back-channel-etched (BCE) process. Since the BCE process reduces the active mask step compared to other processes, it has attracted attention as a back-plane process that could be used for mass production. To realize the long channel in the BCE process, a floating metal is required; this acts as a bridge in the middle of the channel. We used TCAD (Technology computer-aided design) simulations (Atlas 3D) to predict the characteristics of a-Si TFTs with various active layer thicknesses and numbers of floating metal components; simulation results were compared with real measurements. We explain why TFTs do not scale ideally when floating metals are used; this is related to the resistance and thickness of the active channel. If a thick and highly resistive active channel is used, a larger number of floating metals will require greater correction for ideal scaling. Additionally, considering the capacitance between the source metal and channel, the channel influence under the floating metal should be about 89%. We also suggest a new SPICE (Simulation Program with Integrated Circuit Emphasis) model for TFTs with floating metal based on TCAD simulations.

Characterization and Simulation of a Body Biased Structure in Triple-Well Technology under Pulsed Photoelectric Laser Stimulation

2014 ◽  
Author(s):  
N. Borrel ◽  
C. Champeix ◽  
M. Lisart ◽  
A. Sarafianos ◽  
E. Kussener ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Laser Power ◽  
Pulsed Laser ◽  
Electrical Model ◽  
Activation Threshold ◽  
Laser Stimulation ◽  
Laser Illumination ◽  
High Laser ◽  
Complex Circuits

Abstract This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions inside an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed laser on a triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals possible bipolar transistor activation at high laser power. This activation threshold revealed its dependence on laser power and wells biasing. Based on the measurements made during our experiments, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation.

scholarly journals Computer Numerically Controlled Drawing Robot Based on Computer-Aided Design

2021 ◽  
Author(s):  
Antor Mahamudul Hashan ◽  
Abdullah Haidari ◽  
Srishti Saha ◽  
Titas Paul
Keyword(s):  
Open Source ◽  
Computer Aided Design ◽  
Low Cost ◽  
Rapid Development ◽  
Main Idea ◽  
Numerical Control ◽  
Computer Aided ◽  
Complex Circuits ◽  
Open Source Hardware ◽  
Aided Design

Due to the rapid development of technology, the use of numerically controlled machines in the industry is increasing. The main idea behind this paper is computer-aided design (CAD) based low-cost computer numerical control 2D drawing robot that can accurately draw complex circuits, diagrams, logos, etc. The system is created using open-source hardware and software, which makes it available at a low cost. The open-source LibreCAD application has been used for computer-aided design. Geometric data of a CAD model is converted to coordinate points using the python-based F-Engrave application. This system uses the Arduino UNO board as a signal generator of the universal g-code sender without compromising the performance. The proposed drawing robot is designed as a low-cost robot for educational purposes and aims to increase the student's interest in robotics and computer-aided design (CAD) skills to the next level. The drawing robot structure has been developed, and it meets the requirements of low cost with satisfactory experimental results.

Microsensors for physical signals: Principles, device design, and fabrication technologies

1996 ◽  
Vol 74 (S1) ◽  
pp. 115-130 ◽  
Author(s):  
Arokia Nathan
Keyword(s):  
Integrated Circuit ◽  
Computer Aided Design ◽  
Electrical Signal ◽  
Single Chip ◽  
Research Activity ◽  
Rapid Pace ◽  
Silicon Based ◽  
Aided Design ◽  
New Generation ◽  
Physical And Chemical

Microsensors are miniaturized devices, fabricated using silicon-based and related technologies, that convert input physical and chemical signals into an output electrical signal. The key driving force in microsensor research has been the integrated circuit (IC) and micromachining technologies. The latter, in particular, is fueling tremendous activity in micro-electromechanical systems (MEMS). In terms of technology and design tools, MEMS is at a stage where microelectronics was 30 years ago and is expected to evolve at an equally rapid pace. The synergy between the IC, micromachining, and integrated photonics technologies can potentially spawn a new generation of microsystems that will feature a unique marriage of microsensor, signal-conditioning and -processing circuitry, micromechanics, and optomechanics possibly on a single chip. In this paper, the physical transduction principles, materials considerations, process-fabrication technologies, and computer-aided-design (CAD) tools will be reviewed along with pertinent examples drawn from our microsensor research activity at the Microelectronics Laboratory, University of Waterloo.

Up Close: The Interuniversity Microelectronics Center (IMEC), Leuven, Belgium

MRS Bulletin ◽  
1989 ◽  
Vol 14 (6) ◽  
pp. 35-38 ◽  
Author(s):  
Dirk Denoyelle
Keyword(s):  
Integrated Circuit ◽  
Computer Aided Design ◽  
Systems Design ◽  
System Level ◽  
Clean Room ◽  
Integrated Circuit Design ◽  
Processing Technologies ◽  
Wide Range ◽  
Application Specific Integrated Circuit ◽  
Aided Design

The Interuniversity Microelectronics Center, Leuven, Belgium (IMEC) is one of the world's largest independent research centers for microelectronics. It was established in 1984 by the Flemish government as a part of a comprehensive program to promote high technology in Flanders, Belgium. Benefiting from existing experience available mainly at the University of Leuven, IMEC moved into its present facilities in 1986 (Figure 1).The Center covers a wide range of research topics in the microelectronics domain—VLSI systems design methodologies, advanced semiconductor processing, materials, packaging, and more.About 50 people work on computer-aided design, developing a series of “true” silicon compilers: CATHEDRAL. With this software, ASIC (application specific integrated circuit) design becomes extremely attractive, since CATHEDRAL covers design from the high system level down to layout.INVOMEC, the training division of IMEC, supports universities in ASIC design. It trains people for both educational institutes and industry in chip design, makes available the necessary software, and has a well-established Multi Project Chip—Multi Project Wafer service.The Processing Technologies and Materials Divisions involve about 200 people and have a 3,600 m2 clean room at their disposal. The clean room consists of a 20% class 10 area with a fast-turnaround prototyping line and an 80% class 1000 area.IMEC's objectives are: to perform research in the microelectronics field, supporting both industry and universities, and to stimulate the microelectronics industry in Flanders.IMEC performs research on both silicon and III-V technologies.

Study on Integrated Method of Medical Implant Manufacture Based on Rapid Prototyping Technology

2008 ◽  
Vol 375-376 ◽  
pp. 353-357 ◽  
Author(s):  
Wei Ping Wang ◽  
Singare Sekou ◽  
Ya Xiong Liu ◽  
Di Chen Li ◽  
Bing Heng Lu ◽  
...  
Keyword(s):  
Rapid Prototyping ◽  
Computer Aided Design ◽  
Three Dimensional ◽  
Digital Information ◽  
Medical Implant ◽  
Integrated Method ◽  
Modeling Technology ◽  
Facial Prosthesis ◽  
Skull Model ◽  
Aided Design

The traditional method to manufacture the medical implant or prosthesis is based on sculpting and on the tissue site,or takes impressions of the entire face about human. The accuracy and efficiency of medical implant or prosthesis produced by conventional method is heavily relied on the skill and experience of both designer and manufacturer. In this paper, an integrated method of medical implant manufacture is approached. This integrated strategy was to establish a system that allows fabrication of facial prosthesis from digital information, and integrates the rapid prototyping with modeling technology of complex three-dimensional geometry from high-resolution non-invasive imaging, reverse engineering and computer aided design. The research results have shown that the integrated method can produce more exact-fit medical implant, that is, the physical model of the implant is more exactly fitted on the skull model. The advantages of this method are that the surgeon can plan and rehearse the surgery in advance, and a less invasive surgical procedure, and less time-consuming reconstructive, and an adequate esthetic can result.

scholarly journals 3D Compression: from A to Zip a first complete example

2008 ◽  
Vol 15 (1) ◽  
pp. 9-38
Author(s):  
Thomas Lewiner
Keyword(s):  
Computer Aided Design ◽  
Three Dimensional ◽  
3D Models ◽  
Data Representation ◽  
Specific Class ◽  
Physical Simulations ◽  
Image Creation ◽  
Multidimensional Objects ◽  
Aided Design ◽  
Fast Access

Images invaded most of contemporary publications and communications. This expansion has accelerated with the development of efficient schemes dedicated to image compression. Nowadays, the image creation process relies on multidimensional objects generated from computer aided design, physical simulations, data representation or optimisation problem solutions. This variety of sources motivates the design of compression schemes adapted to specific class of models. The recent launch of Google Sketch’up and its 3D models warehouse has accelerated the shift from two-dimensional images to three-dimensional ones. However, these kind of systems require fast access to eventually huge models, which is possible only through the use of efficient compression schemes. This work is part of a tutorial given at the XXth Brazilian Symposium on Computer Graphics and Image Processing (Sibgrapi 2007).

Fault Localization by Finding Schematic of Devices Connecting All Emission Sites in Photon Emission Microscope Image

2017 ◽  
Author(s):  
Ankush Oberai ◽  
Jiann-Shiun Yuan
Keyword(s):  
Failure Analysis ◽  
Computer Aided Design ◽  
Critical Path ◽  
Photon Emission ◽  
Fault Localization ◽  
Microscope Image ◽  
Transmission Gates ◽  
The One ◽  
Switching Mode ◽  
Aided Design

Abstract The work presented here is related to the utilization of computer aided design (CAD) Navigation tools in combination with images from Emission Microscope (EMMI) to improve the accuracy and efficiency of Failure Analysis. The paper presents the flow to quickly identify the failing device by taking the photon emission microscope image and CAD data as input. EMMI is used extensively for detecting leakage current resulting from device defects, e.g., gate oxide defects/ leakage, latch-up, electrostatic discharge (ESD) failure, junction leakage, etc. This emitted light is captured as hotspots on the image. A typical photon emission microscope image has a series of photon emission spots initiated by one physical defect. Not all emission spots may be defects; for example, emissions are shown during normal saturation or switching mode of the transistor. This results in multiple connectivity path between these spots which failure analysis (FA) engineer may want to analyze. The FA engineer wants to detect the one failed device which causes multiple other devices to show false hotspots. The work presented in this paper involves identifying all the devices beneath the hotspot areas, processing the connectivity of the found devices and extracting the schematic for all the devices beneath these hotspots. The connectivity between the devices could be direct connections through nets or indirect through “transmission gates”. The extracted schematic helps the FA engineer focus the FA work on critical devices such as a driver and enables faster and more accurate fault localization. The work in the paper shows the extraction of critical path of devices and their connectivity.

Scanning Optical Microscopy Application in Micron® Memory Devices

2005 ◽  
Author(s):  
Wong Yaw Yuan ◽  
T.L. Edmund Poh ◽  
David Lam
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Memory Devices ◽  
Back Side ◽  
Induced Voltage ◽  
Scanning Optical Microscopy ◽  
Side Emission ◽  
Complex Circuits

Abstract The migration to smaller geometries has translated to an increase in the number of transistors possible in each integrated circuit. Failure analysis of such complex circuits presents a major challenge to the semiconductor industry and is a driving force behind the considerable interest in nondestructive, cost-efficient, “shortcut” fault isolation techniques. In this paper, we present the application of thermal-induced voltage alteration (TIVA) for failure analysis of 0.11µm technology memory devices and demonstrate the key aspects of this technique. The back side TIVA results are compared with analysis performed using back side emission microscopy (EMMI), and the limitations of EMMI are highlighted. The advantages and limitations of the TIVA technique are also discussed.

scholarly journals Design and Investigation of the Junction-Less TFET with Ge/Si0.3Ge0.7/Si Heterojunction and Heterogeneous Gate Dielectric

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 476 ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Wei Li ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Computer Aided Design ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Source Region ◽  
Ultra Low Power ◽  
Narrow Bandgap ◽  
Order Of Magnitude ◽  
Drain Region ◽  
Aided Design

To improve the on-state current and reduce the miller capacitance of the conventional junction-less tunneling field effect transistor (JLTFET), the junction-less TFET with Ge/Si0.3Ge0.7/Si heterojunction and heterogeneous gate dielectric (H-JLTFET) is investigated by the Technology Computer Aided Design (TCAD) simulation in this paper. The source region uses the narrow bandgap semiconductor material germanium to obtain the higher on-state current; the gate dielectric adjacent to the drain region adopts the low-k dielectric material SiO2, which is considered to reduce the gate-to-drain capacitance effectively. Moreover, the gap region uses the Si0.3Ge0.7 material to decrease the tunneling distance. In addition, the effects of the device sizes, doping concentration and work function on the performance of the H-JLTFET are analyzed systematically. The optimal on-state current and switching ratio of the H-JLTFET can reach 6 µA/µm and 2.6 × 1012, which are one order of magnitude and four orders of magnitude larger than the conventional JLTFET, respectively. Meanwhile, the gate-to-drain capacitance, off-state current and power consumption of the H-JLTFET can be effectively suppressed, so it will have a great potential in future ultra-low power integrated circuit applications.

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