scholarly journals Effect of Magnetic Field Arrangement of Facing Targets Sputtering (FTS) System on Controlling Plasma Confinement

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 321 ◽  
Author(s):  
Sangmo Kim ◽  
Kyung Hwan Kim
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Permanent Magnet ◽  
Discharge Voltage ◽  
Plasma Confinement ◽  
High Quality ◽  
Plasma Damage ◽  
A Value

Conventional sputtering method uses a single cathode with a permanent magnet. Facing targets sputtering (FTS) methods consists of two cathodes. Because of a unique structure, FTS can prepare high quality films with low temperature and low plasma damage. During the film sputtering process, density and confinement of discharged plasma depend on the arrangement of a permanent magnet in the cathode. In this study, we designed two types of permanent magnet arrangements in the FTS system and the designed permanent magnet was inserted into two cathodes in the FTS system. The system was operated in different permanent magnet conditions, and their discharge voltage and properties of as-grown films were recorded. In the designed FTS, compared to a conventional magnetron sputtering method, the substrate temperature increased to a value under 80 °C, which is relatively low, even though the films’ sputtering process was completed.

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

Low-temperature Preparation of Crystallized Zirconia Films by ECR Plasma MOCVD

2005 ◽  
Vol 890 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Low Temperatures ◽  
Monoclinic Zirconia ◽  
High Quality ◽  
Ion Chamber ◽  
Ecr Plasma ◽  
Low Temperature Preparation ◽  
Oxide Ion ◽  
Zirconia Films

ABSTRACTIt is known that zirconia has excellent thermal and chemical stability, and oxide ion conduction. Therefore, YSZ is expected to be used as oxide ion conducting materials, optical mirror materials, catalytic materials and heat-resistant materials. Zirconia films have been fabricated by PVD (ex. sputtering and laser-ablation), chemical vapor deposition (CVD) and sol-gel methods. CVD is capable to prepare high quality zirconia films with excellent conformal coverage; however, deposition temperature of conventional CVD was usually high than PVD. On the other hand, an electron cyclotron resonance (ECR) plasma is high-activity plasma and high quality crystalline films can be obtained at low temperature by using ECR plasma. In the present study, zirconia thin films were prepared at low temperatures on quartz, polycarbonate and polyimide substrates by ECR plasma MOCVD.Zr-hexafluoroacetylacetonato solution was used as a precursor. The source, which was placed in a glass bubbler, was carried into a reactor by Ar gas. A microwave (2.45 GHz, 500 W) was introduced into the ion chamber through a rectangular wave guide. A magnetic field (875 Gauss) was applied to the ion chamber to satisfy the ECR condition. A mirror-type magnetic field (450 Gauss at the substrate stage) was applied in order to raise a plasma density, which results in an increase of the deposition rates of films. Substrate temperature (Ts) was from 30 to 700 C by water-cooling holder and infrared lamp heater. Microwave power was changed from 0 to 900 W. The deposition time was from 30 to 120 minutes.Cubic, monoclinic and tetragonal zirconia films were obtained over Ts=400 C, and cubic and monoclinic zirconia films were obtained below Ts= C. Cubic and monoclinic zirconia films were also obtained at no heating. The deposition rate increased from 10 to 20 nm/min with increasing Ts from no heating to 600 C. Crystallized zirconia films were obtained on polycarbonate and polyimide substrates at no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperatures.

Improved Electrical and Optical Properties of Ultra-Thin Tin Doped Indium Oxide (ITO) Thin Films by a 3-Dimensionally Confined Magnetron Sputtering Source

2021 ◽  
Vol 13 (8) ◽  
pp. 1498-1505
Author(s):  
Long Wen ◽  
Bibhuti-B Sahu ◽  
Jeon-Geon Han ◽  
Geun-Young Yeom
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Oxygen Vacancies ◽  
Discharge Voltage ◽  
Processing Temperature ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

The ultra-thin tin doped crystalline indium oxide (ITO) films (≤50 nm) were successfully deposited by a 3-dimensionally confined magnetron sputtering source (L-3DMS) at the temperature lower than 100 °C. The resistivity and the mobility of the ultra-thin ITO films deposited at a low processing temperature were about ~5 × 10−4 Ω · cm and >30 cm2/Vs, respectively, for the thickness of 30 nm. The high quality of the ultra-thin ITO films deposited by L-3DMS is believed to be related to the improved crystallinity with oxygen vacancies of the ITO films by high density plasma and low discharge voltage of the L-3DMS which enables the formation of a crystalline structure a low processing temperature.

scholarly journals Indium Tin Oxide Thin Film Deposition by Magnetron Sputtering at Room Temperature for the Manufacturing of Efficient Transparent Heaters

Coatings ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 92
Author(s):  
Jago Txintxurreta ◽  
Eva G-Berasategui ◽  
Rocío Ortiz ◽  
Oihane Hernández ◽  
Lucía Mendizábal ◽  
...  
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Process Parameters ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electronic Devices ◽  
Film Deposition ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
High Quality

Indium tin oxide (ITO) thin films are widely used as transparent electrodes in electronic devices. Many of those electronic devices are heat sensitive, thus their manufacturing process steps should not exceed 100 °C. Manufacturing competitive high-quality ITO films at low temperature at industrial scale is still a challenge. Magnetron sputtering technology is the most suitable technology fulfilling those requirements. However, ITO layer properties and the reproducibility of the process are extremely sensitive to process parameters. Here, morphological, structural, electrical, and optical characterization of the ITO layers deposited at low temperature has been successfully correlated to magnetron sputtering process parameters. It has been demonstrated that the oxygen flow controls and influences layer properties. For oxygen flow between 3–4 sccm, high quality crystalline layers were obtained with excellent optoelectronic properties (resistivity <8 × 10−4 Ω·cm and visible transmittance >80%). The optimized conditions were applied to successfully manufacture transparent ITO heaters on large area glass and polymeric components. When a low supply voltage (8 V) was applied to transparent heaters (THs), de-icing of the surface was produced in less than 2 min, showing uniform thermal distribution. In addition, both THs (glass and polycarbonate) showed a great stability when exposed to saline solution.

Development and utility of a new 3-D magnetron source for high rate deposition of highly conductive ITO thin films near room temperature

2018 ◽  
Vol 20 (7) ◽  
pp. 4818-4830 ◽  
Author(s):  
Long Wen ◽  
Bibhuti Bhusan Sahu ◽  
Jeon Geon Han
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
High Rate ◽  
High Quality ◽  
Low Temperature Deposition ◽  
Ito Thin Films ◽  
Temperature Deposition ◽  
Ito Films

This study reports the high rate and low-temperature deposition of high-quality ITO films using a new 3-D confined magnetron sputtering method.

Anisotropic Electron Transport in Cu/Al Multilayers

1992 ◽  
Vol 286 ◽  
Author(s):  
A. N. Fadnis ◽  
David V. Baxter
Keyword(s):  
Magnetic Field ◽  
Electron Transport ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Weak Localization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transverse Magnetoresistance ◽  
Out Of Plane ◽  
The Magnetic Field

ABSTRACTWe have measured the anisotropy of the electron diffusivity in a series of Cu/Al multilayers. The Samples were made by magnetron sputtering and characterized by X-Ray diffraction. The low temperature transverse magnetoresistance of each sample was measured for two different orientations of the magnetic field—parallel and perpendicular to the plane of the sample film. The Weak Localization(WL) contribution to the magnetoresistance is sensitive to the component of the electron diffusivity in a plane perpendicular to the magnetic field. We use this fact to calculate the ratio of different components of the diffusivity from the observed dependence of magnetoresistance on the orientation of magnetic field. For our samples, the ratio of the in and out of plane components of the diffusivity, (Dxy/Dz), is seen to range between 1 and 2.2, and the anisotropy is largest for the sample with the highest conductivity.

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