scholarly journals Suppressing Voltage Spikes of MOSFET in H-Bridge Inverter Circuit

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 390
Author(s):  
Ezzidin Hassan Aboadla ◽  
Sheroz Khan ◽  
Kushsairy Abdul Kadir ◽  
Zulkhairi Md Yusof ◽  
Mohamed Hadi Habaebi ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Switching Frequency ◽  
Circuit Performance ◽  
Semiconductor Switches ◽  
Fast Switching ◽  
High Switching Frequency ◽  
Driver Circuit ◽  
Gate Driver ◽  
Ac Transmission ◽  
Parasitic Components

Power electronics devices are made from semiconductor switches such as thyristors, MOSFETs, and diodes, along with passive elements of inductors, capacitors, and resistors, and integrated circuits. They are heavily used in power processing for applications in computing, communication, medical electronics, appliance control, and as converters in high power DC and AC transmission in what is now called harmonized AC/DC networks. A converter’s operation is described as a periodic sequencing of different modes of operation corresponding to different topologies interfaced to filters made of passive elements. The performance of converters has improved considerably using high switching frequency, which leads to a significant improvement in a power converter’s performance. However, the high dv/dt through a fast-switching transient of the MOSFET is associated with parasitic components generating oscillations and voltage spikes having adverse effects on the operation of complementary switches, thereby affecting the safe operation of the power devices. In this paper, the MOSFET gate-driver circuit performance is improved to suppress the H-Bridge inverter’s voltage spikes. The proposed technique is a simple improvement to the gate driver based on the IR2112 driver (IC) by adding a capacitor to attenuate the effect of parasitic components and the freewheeling current, suppressing the negative voltage spikes. This paper’s main contribution is to improve the gate driver circuit’s capability for suppressing the voltage spikes in the H-Bridge inverter. The improved gate driver circuit is validated experimentally and is compared with the conventional gate driver. The experimental results show that the proposed technique can effectively suppress the MOSFET’s voltage spikes and oscillations.

scholarly journals Reduction of total harmonic distortion of three-phase inverter using alternate switching strategy

2021 ◽  
Vol 12 (3) ◽  
pp. 1598
Author(s):  
Nur Arifah Ramli ◽  
Auzani Jidin ◽  
Zulhani Rasin ◽  
Tole Sutikno
Keyword(s):  
Integrated Circuits ◽  
Harmonic Distortion ◽  
Total Harmonic Distortion ◽  
Switching Frequency ◽  
Digital Integrated Circuits ◽  
Switching Strategy ◽  
Insulated Gate Bipolar Transistor ◽  
High Switching Frequency ◽  
Alternate Switching ◽  
Torque Ripples

Alternating current (AC) electrical drives mainly require smaller current (or torque) ripples and lower total harmonic distortion (THD) of voltage for excellent drive performances. Normally, in practice, to achieve these requirements, the inverter needs to be operated at high switching frequency. By operating at high switching frequency, the size of filter can be reduced. However, the inverter which oftenly employs insulated gate bipolar transistor (IGBT) for high power applications cannot be operated at high switching frequency. This is because, the IGBT switching frequency cannot be operated above 50 kHz due to its thermal restrictions. This paper proposes an alternate switching strategy to enable the use of IGBT for operating the inverter at high switching frequency to improve THD performances. In this strategy, each IGBT in a group of switches in the modified inverter circuit will operate the switching frequency at one-fourth of the inverter switching frequency. The alternate switching is implemented using simple analog and digital integrated circuits.

A Highly Integrated GaAs-based Module for DC-DC Regulators

2013 ◽  
Vol 2013 (1) ◽  
pp. 000604-000610 ◽  
Author(s):  
Greg J. Miller
Keyword(s):  
High Speed ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Cost Effective ◽  
Switching Frequency ◽  
Critical Element ◽  
High Current ◽  
High Switching Frequency ◽  
Gate Driver ◽  
High Level

There is a need and desire to push low voltage point-of-load voltage regulators (POL VRs) to higher switching frequencies. The main reason for this is to increase power density. Silicon MOSFET-based solutions are rapidly approaching their technology limits and are not capable of providing multi-MHz switching frequency for high current (>10A) applications. Gallium Arsenide (GaAs) field effect transistors (FETs) can switch much faster, enabling cost-effective, high-current, high switching frequency POL VRs. Recent advances in GaAs technologies have enabled the demonstration of 5MHz VRs and provide a path to even higher frequency (>50MHz) Power Supply in Package (PSiP) solutions. The high-speed GaAs power FETs are the “engine” to enable efficient high switching frequency POL VRs, but certain key elements must be designed appropriately to realize the desired performance. The gate driver and power path impedances must be minimized. To do this, a high level of integration is required, thus packaging is a critical element. New embedded die packaging solutions enable this high level of integration, dramatically reducing key parasitic impedances that can otherwise throttle performance, while also facilitating very compact multi-chip modules.

Characterization analysis and gate driver design for 1200 V 10 A SiC MOSFET

2018 ◽  
Vol 32 (34n36) ◽  
pp. 1840080
Author(s):  
Mingjing Zhai ◽  
Yuan Yang ◽  
Yang Wen ◽  
Wenqing Yao ◽  
Yuan Li
Keyword(s):  
Semiconductor Device ◽  
Wide Band ◽  
Oxide Semiconductor ◽  
Switching Frequency ◽  
Switching Loss ◽  
Insulated Gate Bipolar Transistor ◽  
Gate Structure ◽  
High Switching Frequency ◽  
Gate Driver ◽  
New Generation

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) can work at high switching frequency with low switching loss compared with Si insulated gate bipolar transistor (IGBT). Although Si IGBT and SiC MOSFET have the same MOS-gate structure, the transient characteristics and the gate driver requirements for Si IGBT and SiC MOSFET are different. In order to fully utilize the advantages of SiC MOSFET, the gate driver of SiC MOSFET needs to be optimized to meet some special driving requirements. The paper aims to analyze the characteristics for the new generation of wide band gap semiconductor device SiC MOSFET and proposes a novel gate driver for SiC MOSFET. Meanwhile, the driving protection circuit of SiC MOSFET is also investigated. The performances of the proposed gate driver have been experimentally evaluated by double pulse test (DPT). In addition, the effect of different external capacitors [Formula: see text] and external driving resistances [Formula: see text] on the switch characteristics of SiC MOSFET is analyzed in detail.

scholarly journals Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

Energies ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 3111 ◽  
Author(s):  
Haider Zaman ◽  
Xiaohua Wu ◽  
Xiancheng Zheng ◽  
Shahbaz Khan ◽  
Husan Ali
Keyword(s):  
High Frequency ◽  
Switching Frequency ◽  
Operating Voltage ◽  
High Power Density ◽  
Negative Power ◽  
Switching Losses ◽  
High Switching Frequency ◽  
Simulation And Experiment ◽  
Gate Driver ◽  
Voltage Spike

The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage.

An Overview of 300 mm SOI Starting Wafer Quality and Its Yield Detractors

2005 ◽  
Author(s):  
Pei Y. Tsai ◽  
Junedong Lee ◽  
Paul Ronsheim ◽  
Lindsay Burns ◽  
Richard Murphy ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Device Fabrication ◽  
Sampling Plan ◽  
Silicon On Insulator ◽  
Manufacturing Processes ◽  
Circuit Performance ◽  
Characterization Techniques ◽  
Wafer Manufacturing

Abstract A stringent sampling plan is developed to monitor and improve the quality of 300mm SOI (silicon on insulator) starting wafers procured from the suppliers. The ultimate goal is to obtain the defect free wafers for device fabrication and increase yield and circuit performance of the semiconductor integrated circuits. This paper presents various characterization techniques for QC monitor and examples of the typical defects attributed to wafer manufacturing processes.

Gate Driver Circuit for a 15-inch AMOLED Display with Narrow Border

2021 ◽  
Author(s):  
Yan Xue ◽  
Kai Liu ◽  
Longjie Wang ◽  
Yu Zhang ◽  
Yuzhi Zheng ◽  
...  
Keyword(s):  
Driver Circuit ◽  
Gate Driver
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