scholarly journals LTCC Packaged Ring Oscillator Based Sensor for Evaluation of Cell Proliferation

Sensors ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 3346 ◽  
Author(s):  
Joni Kilpijärvi ◽  
Niina Halonen ◽  
Maciej Sobocinski ◽  
Antti Hassinen ◽  
Bathiya Senevirathna ◽  
...  
Keyword(s):  
Frequency Shift ◽  
Flip Chip ◽  
Effective Permittivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Cellular Adhesion ◽  
Sensor Response ◽  
Lung Epithelial Cells ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Chip Surface

A complementary metal-oxide-semiconductor (CMOS) chip biosensor was developed for cell viability monitoring based on an array of capacitance sensors utilizing a ring oscillator. The chip was packaged in a low temperature co-fired ceramic (LTCC) module with a flip chip bonding technique. A microcontroller operates the chip, while the whole measurement system was controlled by PC. The developed biosensor was applied for measurement of the proliferation stage of adherent cells where the sensor response depends on the ratio between healthy, viable and multiplying cells, which adhere onto the chip surface, and necrotic or apoptotic cells, which detach from the chip surface. This change in cellular adhesion caused a change in the effective permittivity in the vicinity of the sensor element, which was sensed as a change in oscillation frequency of the ring oscillator. The sensor was tested with human lung epithelial cells (BEAS-2B) during cell addition, proliferation and migration, and finally detachment induced by trypsin protease treatment. The difference in sensor response with and without cells was measured as a frequency shift in the scale of 1.1 MHz from the base frequency of 57.2 MHz. Moreover, the number of cells in the sensor vicinity was directly proportional to the frequency shift.

scholarly journals Radiation Assessment of a 15.6ps Single-Shot Time-to-Digital Converter in Terms of TID

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 558 ◽  
Author(s):  
Bjorn Van Bockel ◽  
Jeffrey Prinzie ◽  
Paul Leroux
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Single Shot ◽  
Digital Converter ◽  
Time To Digital Converter ◽  
Pvt Variations ◽  
Radiation Tolerant ◽  
Radiation Measurements

This article presents a radiation tolerant single-shot time-to-digital converter (TDC) with a resolution of 15.6 ps, fabricated in a 65 nm complementary metal oxide semiconductor (CMOS) technology. The TDC is based on a multipath pseudo differential ring oscillator with reduced phase delay, without the need for calibration or interpolation. The ring oscillator is placed inside a Phase Locked Loop (PLL) to compensate for Process, Voltage and Temperature (PVT) variations- and variations due to ionizing radiation. Measurements to evaluate the performance of the TDC in terms of the total ionizing dose (TID) were done. Two different samples were irradiated up to a dose of 2.2 MGy SiO 2 while still maintaining a resolution of 15.6 ps. The TDC has a differential non-linearity (DNL) and integral non-linearity (INL) of 0.22 LSB rms and 0.34 LSB rms respectively.

scholarly journals Current Measurement Transducer Based on Current-To-Voltage-To-Frequency Converting Ring Oscillator with Cascade Bias Circuit

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 493
Author(s):  
Jongha Park ◽  
Jung-Hyun Park ◽  
Seong-Ook Jung
Keyword(s):  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Measurement Range ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Measurement Transducer ◽  
Current Output ◽  
Differential Nonlinearity ◽  
Rail To Rail

We propose a ring oscillator (RO) based current-to-voltage-to-frequency (I–V–F) converting current transducer with a cascade bias circuit. The I–V–F converting scheme guarantees highly stable biasing against RO, with a rail-to-rail output operation. This device was fabricated using National NanoFab Center (NNFC) 180 nm complementary metal-oxide-semiconductor (CMOS) technology, which achieves a current resolution of 1 nA in a measurement range up to 200 nA. A noise floor of 11.8 pA/√Hz, maximum differential nonlinearity (DNL) of 0.15 in 1 nA steps, and rail-to-rail output with a 1.8 V power supply is achieved. The proposed transducer can be effectively applied to bio-sensing devices requiring a compact area and low power consumption with a low current output. The fabricated structure can be applied to monolithic-three-dimensional integration with a bio-sensing device.

Wireless Transceiver for Three-Dimensional Integrated Circuits Using a Ring Oscillator

2019 ◽  
Vol 29 (10) ◽  
pp. 2050161
Author(s):  
Dongwoo Moon ◽  
Milim Lee ◽  
Changhyun Lee ◽  
Joung-Hu Park ◽  
Changkun Park
Keyword(s):  
Integrated Circuits ◽  
Three Dimensional ◽  
Digital Signal ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Voltage Multiplier ◽  
Wireless Transceiver ◽  
Pulse Type

In this paper, we propose an oscillation-type transceiver for wireless chip-to-chip communication (WCC). The proposed transceiver is composed of a ring oscillator, coils, inverter-type amplifier, voltage multiplier and comparator. The ring oscillator itself acts as the on–off keying (OOK) modulator. The envelope of the transferred OOK-modulated signal is detected in the voltage multiplier of the receiver. Given that the proposed transceiver uses an OOK-modulated oscillating signal, the noise immunity is improved compared to the typical pulse-type transceiver. To verify the functionality of the proposed transceiver, we design the transceiver using the 180-nm complementary metal-oxide-semiconductor process. From the measured results, we verify that the proposed transceiver recovers the entered digital signal up to a distance of 0.2[Formula: see text]mm between the primary and secondary coils. Additionally, the sensitivity to the bias voltage of the latch is nonexistent by virtue of removing the latch in the proposed transceiver.

Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors

2000 ◽  
Author(s):  
Wai Mun Yee ◽  
Mario Paniccia ◽  
Travis Eiles ◽  
Valluri Rao
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
Flip Chip ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ir Laser ◽  
Timing Measurement ◽  
Optical Probing ◽  
Probe Hole ◽  
Silicon Debug

Abstract A novel optical probing technique to measure voltage waveforms from flip-chip packaged complementary metal-oxide-semiconductor (CMOS) integrated circuits (IC) is described. This infrared (IR) laser based technique allows signal waveform acquisition and high frequency timing measurement directly from active PN junctions through the silicon backside substrate on IC’s mounted in flip-chip, stand-alone, or multi-chip module packages as well as wire-bond packages on which the chip backside is accessible. The technique significantly improves silicon debug & failure analysis (FA) through-put time (TPT) as compared to backside electron-beam (E-beam) probing because of the elimination of backside trenching and probe hole generation operations.

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