scholarly journals Low Power AVLS-TSPC based 2/3 Pre-Scaler

2019 ◽  
Vol 9 (1) ◽  
pp. 6687-6693
Keyword(s):  
Low Power ◽  
High Efficiency ◽  
Supply Voltage ◽  
Low Frequency ◽  
Cmos Technology ◽  
Frequency Signal ◽  
High Frequency Signal ◽  
Power Requirement ◽  
Fast Pace ◽  
Integer Division

The technology has grown at an ultra-fast pace along with the world. Small devices with less power and high efficiency are in demand. As the circuit size gets smaller, the power requirement increases due to a greater number of transistors. A pre-scaler is a circuit which reduces the high frequency signal to a low frequency signal by integer division. A new approach to low power pre-scaler is proposed in this paper, which is an add-on to the conventional pre-scaler circuit. A true single-phase clock (TSPC) circuit reduces the skew problems in the clock and is used to realize latches and flip-flops. The objective of low power is fulfilled by incorporating the Adaptive Voltage Level Source (AVLS) to TSPC based circuit. The proposed AVLS-TSPC based pre-scaler was analyzed for a frequency of 10 MHz with a supply voltage of 1.8 V for both divide by 2 and 3 modes. The proposed pre-scaler consumes considerably lesser power when compared to that of the existing pre-scaler circuit. The circuits are implemented in 180 nm CMOS technology using Cadence Virtuoso and simulated using Cadence Spectre.

scholarly journals Research and Construct of Low Power, Excessive-Velocity Comparators using Cmos Generation with Low Deliver Voltages for Adcs

2019 ◽  
Vol 8 (6S) ◽  
pp. 286-291
Keyword(s):  
Low Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Power Supply Voltage ◽  
Voltage Comparator ◽  
Analog To Digital ◽  
Ac Power ◽  
The Given

The evaluation of many comparator outcomes for the given requirement having excessive velocity using analog to digital converters is growing, this are controlled using CMOS comparators which are successful when delivering the low voltage with high efficiency. The comparators are primary part of numerous simple to computerized converters. The prerequisite for low-control, rapid simple to advanced converters is increasing. Thus comparators are generally utilized in the present innovation because of its quick operational speed and high precision. The quickly developing versatile gadget requires low power and high operational capacities which should be improved. A concise investigation of traditional double tail voltage comparator is done and dependent on that, a low power and region productive comparator is displayed. Another comparator is planned so as to decrease the postponement of ordinary comparators and diminish the power utilization of the gadget. Furthermore, the Reproduction is finished by Leather Treated Simple Plan Condition. At last we study about conventional dual tail voltage comparator which is done based on low power and area efficient comparator. In this simulation of proposed comparator is occurs a 180nm CMOS technology its consumes the power of 69µW at 1.2v Ac power supply voltage.

An Ultra-Low Power Subthreshold CMOS RSSI for Wake-Up Receiver

2016 ◽  
Vol 25 (08) ◽  
pp. 1650090 ◽  
Author(s):  
Yunzhen Wang ◽  
Shengxi Diao ◽  
Fujiang Lin ◽  
Haiquan Yuan
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Low Frequency ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Subthreshold Region ◽  
Ultra Low Power ◽  
Limiting Amplifier ◽  
Offset Voltage

This paper reports an ultra-low power received signal strength indicator (RSSI) for low frequency (LF) wake-up receiver. Topology theory analysis and subthreshold operation are performed to lower power consumption. Each gain stage of the subthreshold limiting amplifier (LA) employs cascade diode-connected loads to obtain high output impedance while maintaining low power. An offset cancelation circuit with different tail currents, which also operates in the subthreshold region, is employed to reduce the DC offset voltage. Unbalanced source-coupled pairs of subthreshold devices adopted in the full-wave rectification are optimized. A 45[Formula: see text]dB input dynamic range and [Formula: see text][Formula: see text]dB indicating error are achieved at 125[Formula: see text]KHz frequency. The prototype occupies an active area of 0.39[Formula: see text][Formula: see text][Formula: see text]0.28[Formula: see text]mm using CSMC 0.153-[Formula: see text]m complementary metal-oxide-semiconductor (CMOS) technology. With a 1.8[Formula: see text]V supply voltage, the overall current consumption is only 6[Formula: see text][Formula: see text]A.

scholarly journals An Investigation into Error Source Identification of Machine Tools Based on Time-Frequency Feature Extraction

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
Dongju Chen ◽  
Shuai Zhou ◽  
Lihua Dong ◽  
Jinwei Fan
Keyword(s):  
Machine Tool ◽  
Frequency Domain ◽  
Surface Topography ◽  
High Frequency ◽  
Low Frequency ◽  
Frequency Signal ◽  
High Frequency Signal ◽  
Time Frequency ◽  
Cross Correlation Analysis ◽  
Correlation Analysis Method

This paper presents a new identification method to identify the main errors of the machine tool in time-frequency domain. The low- and high-frequency signals of the workpiece surface are decomposed based on the Daubechies wavelet transform. With power spectral density analysis, the main features of the high-frequency signal corresponding to the imbalance of the spindle system are extracted from the surface topography of the workpiece in the frequency domain. With the cross-correlation analysis method, the relationship between the guideway error of the machine tool and the low-frequency signal of the surface topography is calculated in the time domain.

scholarly journals A Low-Power Opamp-Less Second-Order Delta-Sigma Modulator for Bioelectrical Signals in 0.18 µm CMOS

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6456
Author(s):  
Fernando Cardes ◽  
Nikhita Baladari ◽  
Jihyun Lee ◽  
Andreas Hierlemann
Keyword(s):  
Low Power ◽  
Low Frequency ◽  
Cmos Technology ◽  
Low Noise ◽  
Second Order ◽  
Frequency Noise ◽  
Voltage Controlled Oscillator ◽  
Noise Shaping ◽  
Delta Sigma Modulator ◽  
Delta Sigma

This article reports on a compact and low-power CMOS readout circuit for bioelectrical signals based on a second-order delta-sigma modulator. The converter uses a voltage-controlled, oscillator-based quantizer, achieving second-order noise shaping with a single opamp-less integrator and minimal analog circuitry. A prototype has been implemented using 0.18 μm CMOS technology and includes two different variants of the same modulator topology. The main modulator has been optimized for low-noise, neural-action-potential detection in the 300 Hz–6 kHz band, with an input-referred noise of 5.0 μVrms, and occupies an area of 0.0045 mm2. An alternative configuration features a larger input stage to reduce low-frequency noise, achieving 8.7 μVrms in the 1 Hz–10 kHz band, and occupies an area of 0.006 mm2. The modulator is powered at 1.8 V with an estimated power consumption of 3.5 μW.

scholarly journals Ladder-Based Synthesis and Design of Low-Frequency Buffer-Based CMOS Filters

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2931
Author(s):  
Waldemar Jendernalik ◽  
Jacek Jakusz ◽  
Grzegorz Blakiewicz
Keyword(s):  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Low Frequency ◽  
Cmos Technology ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Biomedical Sensors ◽  
Filter Synthesis ◽  
Cascade Method

Buffer-based CMOS filters are maximally simplified circuits containing as few transistors as possible. Their applications, among others, include nano to micro watt biomedical sensors that process physiological signals of frequencies from 0.01 Hz to about 3 kHz. The order of a buffer-based filter is not greater than two. Hence, to obtain higher-order filters, a cascade of second-order filters is constructed. In this paper, a more general method for buffer-based filter synthesis is developed and presented. The method uses RLC ladder prototypes to obtain filters of arbitrary orders. In addition, a set of novel circuit solutions with ultra-low voltage and power are proposed. The introduced circuits were synthesized and simulated using 180-nm CMOS technology of X-FAB. One of the designed circuits is a fourth-order, low-pass filter that features: 100-Hz passband, 0.4-V supply voltage, power consumption of less than 5 nW, and dynamic range above 60 dB. Moreover, the total capacitance of the proposed filter (31 pF) is 25% lower compared to the structure synthesized using a conventional cascade method (40 pF).

scholarly journals Analysis On Power Gating Circuits Based Low Power VLSI Circuits (BCD Adder)

2021 ◽  
Vol 2089 (1) ◽  
pp. 012080
Author(s):  
M. Srinivas ◽  
K.V. Daya Sagar
Keyword(s):  
Energy Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Oxide Thickness ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Leakage Power ◽  
Vlsi Circuits ◽  
Battery Life

Abstract Currently, energy consumption in the digital circuit is a key design parameter for emerging mobile products. The principal cause of the power dissipation during idle mode is leakage currents, which are rising dramatically. Sub-threshold leakage is increased by the scaling of threshold voltage when gate current leakage increases because oxide thickness is scaled. With rising demands for mobile devices, leakage energy consumption has received even greater attention. Since a mobile device spends most of its time in standby mode, leakage power savings need to prolong the battery life. That is why low power has become a significant factor in CMOS circuit design. The required design and simulation of an AND gate with the BSIM4 MOS parameter model at 27 0C, supply voltage of 0,70V with CMOS technology of 65nm are the validation of the suitability of the proposed circuit technology. AND simulation. The performance parameters for the two AND input gate are compared with the current MTCMOS and SCCMOS techniques, such as sub-threshold leakage power dissipations in active and standby modes, the dynamic dissipation, and propagation period. The proposed hybrid super cutoff complete stack technique compared to the current MTCMOS technology shows a reduction in sub-threshold dissipation power dissipation by 3. 50x and 1.15x in standby modes and active modes respectively. The hybrid surface-cutting technique also shows savings of 2,50 and 1,04 in power dissipation at the sub-threshold in standby modes and active modes compared with the existing SCCMOS Technique.

scholarly journals A 2.5-GHz 1-V High Efficiency CMOS Power Amplifier IC with a Dual-Switching Transistor and Third Harmonic Tuning Technique

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 69 ◽  
Author(s):  
Taufiq Alif Kurniawan ◽  
Toshihiko Yoshimasu
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Low Voltage ◽  
Supply Voltage ◽  
Drain Current ◽  
Cmos Technology ◽  
Back Gate ◽  
Third Harmonic ◽  
Power Added Efficiency ◽  
Switching Transistor

This paper presents a 2.5-GHz low-voltage, high-efficiency CMOS power amplifier (PA) IC in 0.18-µm CMOS technology. The combination of a dual-switching transistor (DST) and a third harmonic tuning technique is proposed. The DST effectively improves the gain at the saturation power region when the additional gain extension of the secondary switching transistor compensates for the gain compression of the primary one. To achieve high-efficiency performance, the third harmonic tuning circuit is connected in parallel to the output load. Therefore, the flattened drain current and voltage waveforms are generated, which in turn reduce the overlapping and the dc power consumption significantly. In addition, a 0.5-V back-gate voltage is applied to the primary switching transistor to realize the low-voltage operation. At 1 V of supply voltage, the proposed PA has achieved a power added efficiency (PAE) of 34.5% and a saturated output power of 10.1 dBm.

Wavelet De-Noising Algorithm Based on OpenCV for Images Edge Detection

2014 ◽  
Vol 989-994 ◽  
pp. 3973-3976
Author(s):  
Yi Fan Ma ◽  
Shu Gui Liu
Keyword(s):  
Edge Detection ◽  
High Frequency ◽  
Low Frequency ◽  
Frequency Signal ◽  
High Frequency Signal ◽  
Canny Edge Detection ◽  
Image Edge Detection ◽  
Canny Edge ◽  
Image Edge ◽  
Wavelet Algorithm

Image edge detection is easily affected by noise. Wavelet algorithm can divide the image into low frequency and high frequency. By the processing of high frequency signal and the reconstruction of wavelet coefficients, the purpose of removing noise can be achieved. In the environment of VC++6.0, an image de-noising algorithm based on the wavelet combined with the Canny edge detection is proposed, which obtains a good result. The above algorithms are implemented based on OpenCV, which is more efficient, providing the conditions for subsequent image analysis and recognition. Experiments are carried out and the results show that the proposed algorithm is available and has a good performance.

Low Power FGSRAM Cell Using Sleepy and LECTOR Technique

2016 ◽  
Vol 4 (2) ◽  
pp. 333 ◽  
Author(s):  
Kanan Bala Ray ◽  
Sushanta Kumar Mandal ◽  
Shivalal Patro
Keyword(s):  
Low Power ◽  
Power Supply ◽  
High Stability ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Floating Gate ◽  
Power Supply Voltage ◽  
Operation Analysis ◽  
Sram Cell ◽  
Simulation Results

<em>In this paper floating gate MOS (FGMOS) along with sleep transistor technique and leakage control transistor (LECTOR) technique has been used to design low power SRAM cell. Detailed investigation on operation, analysis and result comparison of conventional 6T, FGSRAM, FGSLEEPY, FGLECTOR and FGSLEEPY LECTOR has been done. All the simulations are done in Cadence Virtuoso environment on 45 nm standard CMOS technology with 1 V power supply voltage. Simulation results show that FGSLEEPY LECTOR SRAM cell consumes very low power and achieves high stability compared to conventional FGSRAM Cell</em>

Ultra-low-power time-efficient circuitry of dual comparator/amplifier for SAR ADC by CMOS technology

Circuit World ◽  
2020 ◽  
Vol 46 (3) ◽  
pp. 183-192
Author(s):  
Muhammad Yasir Faheem ◽  
Shun'an Zhong ◽  
Xinghua Wang ◽  
Muhammad Basit Azeem
Keyword(s):  
Low Power ◽  
Energy Efficient ◽  
Supply Voltage ◽  
Main Idea ◽  
Cost Effective ◽  
Cmos Technology ◽  
Sar Adc ◽  
Ultra Low Power ◽  
Content Type ◽  
Analogue To Digital

Purpose Successive approximation register (SAR) analogue to digital converter (ADC) is well-known with regard to low-power operations. To make it energy-efficient and time-efficient, scientists are working for the last two decades, and it still needs the attention of the researchers. In actual work, there is no mechanism and circuitry for the production of two simultaneous comparator outputs in SAR ADC. Design/methodology/approach A small-sized, low-power and energy-efficient circuitry of a dual comparator and an amplifier is presented, which is the most important part of SAR ADC. The main idea is to design a multi-dimensional circuit which can deliver two quick parallel comparisons. The circuitry of the three devices is combined and miniaturized by introducing a lower number of MOSFET’s and small-sized capacitors in such a way that there is no need for any matching and calibration. Findings The supply voltage of the proposed comparator is 0.7 V with the overall power consumption of 0.257mW. The input and clock frequencies are 5 and 50 MHz, respectively. There is no requirement for any offset calibration and mismatching concerns due to sharing and centralization of spider-latch circuitry. The total offset voltages are 0.13 0.31 mV with 0.3VDD to VDD. All the components are small-sized and miniaturized to make the circuit cost-effective and energy-efficient. The rise and response time of comparator is around 100 ns. SNDR improved from 56 to 65 dB where the input-referred noise of an amplifier is 98mVrms. Originality/value The proposed design has no linear-complexity compared with the conventional comparator in both modes (working and standby); it is ultimately intended and designed for 11-bit SAR ADC. The circuit based on three rapid clock pulses for three different modes includes amplification and two parallel comparisons controlled and switched by a latch named as “spider-latch”.

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