Low-Power High-Performance Tunnel FET With Analysis for IoT Applications

2020 ◽  
pp. 47-67 ◽  
Author(s):  
Suman Lata Tripathi
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Digital Design ◽  
Iot Applications ◽  
Reduction Techniques ◽  
Tunnel Fet ◽  
Harvesting Systems ◽  
On Chip ◽  
Memory Applications

The emerging tunnel FET is analysed in terms of ON-state current, OFF-state current, subthreshold slope, switching capacitance to explore its applications for smaller size low-power high-speed digital and memory applications that are an integral part of portable intelligent devices for IoT applications. A large portion of IoT systems are associated with these embedded SRAM/DRAM memories that contribute to a major portion of power dissipation in systems-on-chip (SoCs) or digital design. Several SRAM cell-based memory designs with TFET structures are compared to focus their applications. The ambilpolar nature of TFET structures are investigated for highly random, unclonable secured hardware systems. New circuit designs with TFET were explored for turn-on voltage reduction, ON-state resistance reduction, and reverse leakage reduction techniques that plays an important role in designing efficient energy-harvesting systems.

scholarly journals Ultracompact and low-power-consumption silicon thermo-optic switch for high-speed data

Nanophotonics ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 937-945
Author(s):  
Ruihuan Zhang ◽  
Yu He ◽  
Yong Zhang ◽  
Shaohua An ◽  
Qingming Zhu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Pulse Amplitude ◽  
Telecommunication Networks ◽  
Low Power Consumption ◽  
Power Efficient ◽  
High Speed Data ◽  
On Chip

AbstractUltracompact and low-power-consumption optical switches are desired for high-performance telecommunication networks and data centers. Here, we demonstrate an on-chip power-efficient 2 × 2 thermo-optic switch unit by using a suspended photonic crystal nanobeam structure. A submilliwatt switching power of 0.15 mW is obtained with a tuning efficiency of 7.71 nm/mW in a compact footprint of 60 μm × 16 μm. The bandwidth of the switch is properly designed for a four-level pulse amplitude modulation signal with a 124 Gb/s raw data rate. To the best of our knowledge, the proposed switch is the most power-efficient resonator-based thermo-optic switch unit with the highest tuning efficiency and data ever reported.

Thermometer to Gray Encoders

2015 ◽  
pp. 323-335
Author(s):  
Yogendra Gupta ◽  
Sandeep Saini
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Gray Code ◽  
Direct Conversion ◽  
Flash Adc ◽  
Analog To Digital ◽  
Modulation Techniques ◽  
On Chip ◽  
Minimal Area

Analog to Digital Converter (ADC) is a key functional block in the design of mixed signal, system on chip, and signal processing applications. An optimized method for the direct conversion of analog signal to Gray code representation is presented. This eliminates the need for binary-to-Gray code conversion in many digital modulation techniques like M-PSK and M-QAM, which uses Gray coding representation to represent the symbols that are modulated. The authors design a low-power and high-speed Thermometer to Gray encoder for Flash ADC, as encoders have been widely utilized in high-performance critical applications which persistently impose special design constraints in terms of high-frequency, low power consumption, and minimal area. In this chapter, they propose a new circuit that converts the Thermometer code to Gray code and also yields minimized power.

Efficient Instruction and Data Caching for High Performance Embedded Processors

1970 ◽  
pp. 9
Author(s):  
A. Ferrerón Labari ◽  
D. Suárez Gracia ◽  
V. Viñals Yúfera
Keyword(s):  
Embedded Systems ◽  
Power Consumption ◽  
Low Power ◽  
Interconnection Networks ◽  
High Performance ◽  
Critical Issue ◽  
Content Management ◽  
Structure Design ◽  
Portable Devices ◽  
On Chip

In the last years, embedded systems have evolved so that they offer capabilities we could only find before in high performance systems. Portable devices already have multiprocessors on-chip (such as PowerPC 476FP or ARM Cortex A9 MP), usually multi-threaded, and a powerful multi-level cache memory hierarchy on-chip. As most of these systems are battery-powered, the power consumption becomes a critical issue. Achieving high performance and low power consumption is a high complexity challenge where some proposals have been already made. Suarez et al. proposed a new cache hierarchy on-chip, the LP-NUCA (Low Power NUCA), which is able to reduce the access latency taking advantage of NUCA (Non-Uniform Cache Architectures) properties. The key points are decoupling the functionality, and utilizing three specialized networks on-chip. This structure has been proved to be efficient for data hierarchies, achieving a good performance and reducing the energy consumption. On the other hand, instruction caches have different requirements and characteristics than data caches, contradicting the low-power embedded systems requirements, especially in SMT (simultaneous multi-threading) environments. We want to study the benefits of utilizing small tiled caches for the instruction hierarchy, so we propose a new design, ID-LP-NUCAs. Thus, we need to re-evaluate completely our previous design in terms of structure design, interconnection networks (including topologies, flow control and routing), content management (with special interest in hardware/software content allocation policies), and structure sharing. In CMP environments (chip multiprocessors) with parallel workloads, coherence plays an important role, and must be taken into consideration.

Performance Analysis of Various Multipliers Using 8T-full Adder with 180nm Technology

2020 ◽  
Vol 13 (6) ◽  
pp. 864-870
Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Fundamental Operation ◽  
Wallace Tree ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Wallace Tree Multiplier

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.

LOW-POWER, PARALLEL INTERFACE WITH CONTINUOUS-TIME ADAPTIVE PASSIVE EQUALIZER AND CROSSTALK CANCELLATION

2005 ◽  
Vol 15 (02) ◽  
pp. 459-476
Author(s):  
C. PATRICK YUE ◽  
JAEJIN PARK ◽  
RUIFENG SUN ◽  
L. RICK CARLEY ◽  
FRANK O'MAHONY
Keyword(s):  
Low Power ◽  
Electromagnetic Interference ◽  
Continuous Time ◽  
High Speed ◽  
High Performance ◽  
Process Variations ◽  
Cmos Process ◽  
Power Circuit ◽  
Crosstalk Cancellation ◽  
Circuit Components

This paper presents the low-power circuit techniques suitable for high-speed digital parallel interfaces each operating at over 10 Gbps. One potential application for such high-performance I/Os is the interface between the channel IC and the magnetic read head in future compact hard disk systems. First, a crosstalk cancellation technique using a novel data encoding scheme is introduced to suppress electromagnetic interference (EMI) generated by the adjacent parallel I/Os . This technique is implemented utilizing a novel 8-4-PAM signaling with a data look-ahead algorithm. The key circuit components in the high-speed interface transceiver including the receive sampler, the phase interpolator, and the transmitter output driver are described in detail. Designed in a 0.13-μm digital CMOS process, the transceiver consumes 310 mW per 10-Gps channel from a I-V supply based on simulation results. Next, a 20-Gbps continuous-time adaptive passive equalizer utilizing on-chip lumped RLC components is described. Passive equalizers offer the advantages of higher bandwidth and lower power consumption compared with conventional designs using active filter. A low-power, continuous-time servo loop is designed to automatically adjust the equalizer frequency response for the optimal gain compensation. The equalizer not only adapts to different channel characteristics, but also accommodates temperature and process variations. Implemented in a 0.25-μm, 1P6M BiCMOS process, the equalizer can compensate up to 20 dB of loss at 10 GHz while only consumes 32 mW from a 2.5-V supply.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

scholarly journals A HIGH-PERFORMANCE AND LOW-POWER DELAY BUFFER

2013 ◽  
pp. 78-82
Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Vlsi Design ◽  
Flip Flop ◽  
Ring Counter ◽  
Double Edge ◽  
Low Power Cmos ◽  
Cmos Vlsi

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.

scholarly journals Design of Completion Detectors in Asynchronous Communication System

2020 ◽  
Vol 9 (3) ◽  
pp. 3329-3334
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Communication System ◽  
Implementation Process ◽  
Asynchronous Communication ◽  
Digital Design ◽  
Low Power Consumption ◽  
Asynchronous Design ◽  
Global Clock ◽  
On Chip

In digital design, there are two types of design, synchronous design and asynchronous design. In synchronous design, global clock is one of the main system that consume a lot of power. The power in synchronous design is consumed by clock even if there is no data processing take place. The asynchronous design that depends on data is clockless and as far as the power is concerned, asynchronous design does not consume much power compared with synchronous design and this really make asynchronus design the preffered choice for low power consumption. Besides having low power consumption, there are many advantages of aynchronous design compared with synchronous design. This paper proposed new dual rail completion detector (CD), 3-6 CD, 2-7 CD and 1-4 CD for on-chip communication that are used widely in an asynchronous communication system. The design of CD is based on the principle of sum adder. The circuit is designed by using Altera Quartus II CAD tools, synthesis and implementation process is executed to check the syntax error of the design. The design proved to be successful by using asynchronous on-chip communication in the simulation.

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