Thermal Stress Analysis of Silver Welding Spot on Solar Cell of Space Solar Array

2013 ◽  
Vol 278-280 ◽  
pp. 500-504
Author(s):  
Shu Jie Zhang ◽  
Yu Han Zhang
Keyword(s):  
Thermal Stress ◽  
Solar Cell ◽  
Thermal Deformation ◽  
Thermal Stresses ◽  
Solar Array ◽  
Thermal Vacuum ◽  
Welding Spot ◽  
Stress And Deformation ◽  
Cyclic Changes ◽  
Design And Manufacture

Cyclic changes of temperature in space may cause thermal deformation and thermal stresses at the silver welding spots on solar cells, which result in the solar array work abnormally. According to the temperature conditions in the thermal vacuum, the thermal stress and deformation at silver welding spot that between solar cell and inter-link chip were analyzed. The result shows that thermal cycling can make the sliver welding spot separated or contacted, which cause the solar array work wrong. The phenomenon of thermal vacuum reliability test was corresponding with these results. This paper could offer some references for the design and manufacture of solar array in the future.

scholarly journals Direct Laser Deposition Metal 3D Printing at Different Temperatures of the Printer’s Chamber: Computer Simulation

2020 ◽  
Author(s):  
Hamed Hosseinzadeh
Keyword(s):  
Thermal Stress ◽  
3D Printing ◽  
Thermal Stresses ◽  
Direct Consequence ◽  
Manufacturing Method ◽  
Direct Laser ◽  
Complex Shapes ◽  
Different Temperatures ◽  
Metal 3D Printing ◽  
Stress And Deformation

Metal 3D printing technology is a promising manufacturing method. The quality of the printed product can pass for mechanical application, if the anisotropy of the microstructure, imperfections, deformation, and residual stress of the printed sample could be lower than the appropriate level or if they are fully illuminated. Thermal stress is one of the significant reasons for deformation in the 3D printed samples. Thermal stresses are the direct consequence of the local temperature gradient. In this research, the effect of the temperature printer’s chamber (from room temperature to 900 C) was studied on thermal stress and subsequent total deformation in the printed sample. The printed sample is a six-layers-printed walk, which could be considered as a building block of other complex shapes and give us inside about deformation. The computational results show a meaningful reduction in thermal stress and deformation at the higher temperature of the printer’s chamber. The lower final deformation of the printed sample is an important subject, especially for samples with complex shapes.

Stress and Deformation of Pzt Thin Film on Silicon Wafer Due to Thermal Expansion

1999 ◽  
Vol 574 ◽  
Author(s):  
Ming Zang ◽  
Dennis L. Polla ◽  
Shayne M. Zurn ◽  
Tianhong Cui
Keyword(s):  
Thin Films ◽  
Thermal Stress ◽  
Silicon Nitride ◽  
Tensile Stress ◽  
Silicon Dioxide ◽  
Silicon Wafer ◽  
Thermal Stresses ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Stress And Deformation

AbstractStress and deformation of PZT thin films deposited on silicon wafers due to thermal expansion during the annealing process are modeled using a 3-D shell element of ANSYS. Two different designs of PZT thin films on the wafer are modeled. The first design is a PZT/Pt/Ti/silicon dioxide/silicon wafer, which is used for making acoustic emission sensors. The second design is a PZT/Pt/Ti/silicon dioxide/silicon nitride/silicon dioxide/silicon wafer, commonly used in fabrication of cantilever beams. For the design without the silicon nitride layer, the thermal stress of the PZT film is 298MPa, Pt 1280MPa, Ti 647MPa, the silicon dioxide layer is 228MPa, and the silicon wafer is 0.41–1.67MPa. For the design with silicon nitride, the thermal stresses are: PZT 301MPa, Pt 1280MPa, Ti 651MPa, silicon dioxide 226MPa, silicon nitride 416MPa, silicon dioxide 226MPa, and silicon wafer 1.05–4.23MPa. The residual stress of the PZT film is measured at 200–25OMPa for the design without silicon nitride, and 336MPa for the design with silicon nitride. Comparisons of the thermal stress with the tensile or proof stress of material for each layer indicate that thermal stress of the PZT film is slightly greater than its bulk tensile stress, that of Pt film is five times greater than its bulk tensile stress, and that of Ti film is approximately equal to its bulk tensile stress. The thermal stresses of silicon dioxide, silicon nitride, and silicon wafer layers are far smaller than their proof stresses.

scholarly journals Modeling and Measurement of Thermal Effect in a Flashlamp-Pumped Direct-Liquid-Cooled Split-Disk Nd:LuAG Ceramic Laser Amplifier

Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 97
Author(s):  
Shengzhe Ji ◽  
Wenfa Huang ◽  
Tao Feng ◽  
Long Pan ◽  
Jiangfeng Wang ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Thermal Effects ◽  
Thermal Deformation ◽  
High Energy ◽  
Gain Medium ◽  
Wavefront Aberration ◽  
Experimental Measurements ◽  
Laser Amplifier ◽  
Design And Optimization ◽  
Ceramic Laser

In this paper, a model to predict the thermal effects in a flashlamp-pumped direct-liquid-cooled split-disk Nd:LuAG ceramic laser amplifier has been presented. In addition to pumping distribution, the model calculates thermal-induced wavefront aberration as a function of temperature, thermal stress and thermal deformation in the gain medium. Experimental measurements are carried out to assess the accuracy of the model. We expect that this study will assist in the design and optimization of high-energy lasers operated at repetition rate.

Numerical Analysis on Thermal Deformation of Linear Motor in Chip Mounter

2011 ◽  
Author(s):  
Kang-Woo Joo ◽  
Kwang-Sun Kim ◽  
Jun-Young Kim ◽  
Hee-Rak Beom
Keyword(s):  
Thermal Deformation ◽  
Linear Motor ◽  
Ball Screw ◽  
Heat Transfer Analysis ◽  
Semiconductor Chip ◽  
Research Activities ◽  
And Performance ◽  
Stress And Deformation ◽  
Electro Magnetic ◽  
Semiconductor Chips

In the semiconductor chip mounting process, the size of semiconductor chips is decreasing, while the number of mounting the chips per time are increasing, and this trend is being accelerated. The research activities to develop the chip mounters, which are able to mount rapidly and accurately, have been needed in the industry. With this background, the linear motor in the chip mounters has been an important part. The electro-magnetic type linear motor has many advantages such as direct linear reciprocating motion being compared with the rotary motor and the ball screw type linear motor. However, the electro-magnetic linear motor has thermal problems. These problems affect life and performance of motor and bring out the other problems such as thermal stress and deformation. The heat transfer analysis is difficult to solve thermal problems because the moving and fixed parts coexist. The trial & error methods have been therefore used under majority of cases. In this paper, we investigated the thermal deformation problems of linear motor in a chip mounter and the optimized parameters to design the motion parts of electro-magnetic linear motor were obtained.

Three Turnaround Heat Treating Studies

2003 ◽  
Author(s):  
Jaan Taagepera ◽  
Marty Clift ◽  
D. Mike DeHart ◽  
Keneth Marden
Keyword(s):  
Heat Treatment ◽  
Finite Element Analysis ◽  
Finite Element ◽  
Thermal Stress ◽  
Thermal Stresses ◽  
Heat Treating ◽  
Element Analysis ◽  
Stress Profiles ◽  
Insight Into

Three vessel modifications requiring heat treatment were analyzed prior to and during a planned turnaround at a refinery. One was a thick nozzle that required weld build up. This nozzle had been in hydrogen service and required bake-out to reduce the potential for cracking during the weld build up. Finite element analysis was used to study the thermal stresses involved in the bake-out. Another heat treatment studied was a PWHT of a nozzle replacement. The heat treatment band and temperature were varied with location in order to minimize cost and reduction in remaining strength of the vessel. Again, FEA was used to provide insight into the thermal stress profiles during heat treatment. The fmal heat treatment study was for inserting a new nozzle in a 1-1/4Cr-1/2Mo reactor. While this material would ordinarily require PWHT, the alteration was proposed to be installed without PWHT. Though accepted by the Jurisdiction, this nozzle installation was ultimately cancelled.

Steady-State Thermal Stresses in Wedge-Shaped Cutting Tools

1975 ◽  
Vol 97 (3) ◽  
pp. 1060-1066
Author(s):  
P. F. Thomason
Keyword(s):  
Thermal Stress ◽  
Steady State ◽  
Metal Cutting ◽  
Thermal Stresses ◽  
Heat Conduction Problem ◽  
Equivalent Stress ◽  
Cutting Tools ◽  
Thermoelastic Stress ◽  
Plastic State ◽  
Steady State Heat

Closed form expressions for the steady-state thermal stresses in a π/2 wedge, subject to constant-temperature heat sources on the rake and flank contact segments, are obtained from a conformal mapping solution to the steady-state heat conduction problem. It is shown, following a theorem of Muskhelishvili, that the only nonzero thermal stress in the plane-strain wedge is that acting normal to the wedge plane. The thermal stress solutions are superimposed on a previously published isothermal cutting-load solution, to give the complete thermoelastic stress distribution at the wedge surfaces. The thermoelastic stresses are then used to determine the distribution of the equivalent stress, and this gives an indication of the regions on a cutting tool which are likely to be in the plastic state. The results are discussed in relation to the problems of flank wear and rakeface crater wear in metal cutting tools.

Numerical Simulation Analysis for Scroll of Scroll Compressor Based on ABAQUS

2014 ◽  
Vol 488-489 ◽  
pp. 1047-1051
Author(s):  
Qing Qian Zheng ◽  
Bin Yang ◽  
Ning Chen ◽  
Hui Min Yang ◽  
Min Hu
Keyword(s):  
Numerical Simulation ◽  
Stress Distribution ◽  
Thermal Deformation ◽  
Vortex Flow ◽  
Simulation Analysis ◽  
Temperature Load ◽  
Stress And Deformation ◽  
Finite Method ◽  
Abaqus Software ◽  
Main Factor

In this paper, the finite method is applied and ABAQUS software is used, the vortex flow field is loaded as boundary condition of wraps. The stress and deformation in scroll under the action of gas pressure, temperature load and both of them is analyzed, the stress distribution and deformation of wraps in different shaft rotation angles is discussed, the stress distribution and deformation discipline of wraps are also respectively obtained. The results show that the overall stress and deformation in scroll are the largest when compression chamber is moving near the vent position and the thermal deformation is the main factor of affecting the overall deformation of scroll.

scholarly journals Design and fabrication of a semi-transparent solar cell considering the effect of the layer thickness of MoO3/Ag/MoO3 transparent top contact on optical and electrical properties

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Çağlar Çetinkaya ◽  
Erman Çokduygulular ◽  
Barış Kınacı ◽  
Feyza Güzelçimen ◽  
Yunus Özen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Layer Thickness ◽  
High Performance ◽  
Near Infrared ◽  
Visible Region ◽  
Infrared Region ◽  
Experimental Comparison ◽  
Top Contact ◽  
Cie Chromaticity ◽  
Design And Manufacture

AbstractWe conducted the present study to design and manufacture a semi-transparent organic solar cell (ST-OSC). First, we formed a transparent top contact as MoO3/Ag/MoO3 in a dielectric/metal/dielectric (DMD) structure. We performed the production of an FTO/ZnO/P3HT:PCBM/MoO3/Ag/MoO3 ST-OSC by integrating MoO3/Ag/MoO3 (10/$$d_{m}$$ d m /$$d_{{od}}$$ d od nm) instead of an Ag electrode in an opaque FTO/ZnO/P3HT:PCBM/MoO3/Ag (–/40/130/10/100 nm) OSC, after theoretically achieving optimal values of optical and electrical parameters depending on Ag layer thickness. The transparency decreased with the increase of $$d_{m}$$ d m values for current DMD. Meanwhile, maximum transmittance and average visible transmittance (AVT) indicated the maximum values of over 92% for $$d_{m} ~$$ d m  = 4 and 8 nm, respectively. For ST-OSCs, the absorption and reflectance increased in the visible region by a wavelength of longer than 560 nm and in the whole near-infrared region by increasing $$d_{m}$$ d m up to 16 nm. Moreover, in the CIE chromaticity diagram, we reported a shift towards the D65 Planckian locus for colour coordinates of current ST-OSCs. Electrical analysis indicated the photogenerated current density and AVT values for $$d_{m} = 6$$ d m = 6  nm as 63.30 mA/cm2 and 38.52%, respectively. Thus, the theoretical and experimental comparison of optical and electrical characteristics confirmed that the manufactured structure is potentially conducive for a high-performance ST-OSC.

Modelling of Convective Melt Flow and Interface Shape in Commercial Bridgman-Stockbarger Growth of CdZnTe

2000 ◽  
Author(s):  
Toby D. Rule ◽  
Ben Q. Li ◽  
Kelvin G. Lynn
Keyword(s):  
Heat Transfer ◽  
Thermal Stress ◽  
Solute Transport ◽  
Latent Heat ◽  
Thermal Stresses ◽  
Radiation Detector ◽  
Time History ◽  
High Quality ◽  
Melt Convection ◽  
The Impact

Abstract CdZnTe single crystals for radiation detector and IR substrate applications must be of high quality and controlled purity. The growth of such crystals from a melt is very difficult due to the low thermal conductivity and high latent heat of the material, and the ease with which dislocations, twins and precipitates are introduced during crystal growth. These defects may be related to solute transport phenomena and thermal stresses associated with the solidification process. As a result, production of high quality material requires excellent thermal control during the entire growth process. A comprehensive model is being developed to account for radiation and conduction within the furnace, thermal coupling between the furnace and growth crucible, and finally the thermal stress fields within the growing crystal which result from the thermal conditions imposed on the crucible. As part of this effort, the present work examines the heat transfer and fluid flow within the crucible, using thermal boundary conditions obtained from experimental measurements. The 2-D axisymetric numerical model uses the deforming finite element method, with allowance made for melt convection, solidification with latent heat release and conjugate heat transfer between the solid material and the melt. Results are presented for several stages of growth, including a time-history of the solid-liquid interface (1365 K isotherm). The impact of melt convection, thermal end conditions and furnace temperature gradient on the growth interface is evaluated. Future work will extend the present model to include radiation exchange within the furnace, and a transient analysis for studying solute transport and thermal stress.

scholarly journals Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2603 ◽  
Author(s):  
Zhiyong Chen ◽  
Meifeng Guo ◽  
Rong Zhang ◽  
Bin Zhou ◽  
Qi Wei
Keyword(s):  
Thermal Stress ◽  
Natural Frequency ◽  
Frequency Conversion ◽  
Thermal Stresses ◽  
Sensors And Actuators ◽  
Stress Variation ◽  
Rigid Frame ◽  
Measured Stress ◽  
Stress Isolation ◽  
Frequency Variations

The mechanical stress in silicon-on-glass MEMS structures and a stress isolation scheme were studied by analysis and experimentation. Double-ended tuning forks (DETFs) were used to measure the stress based on the stress-frequency conversion effect. Considering the coefficients of thermal expansion (CTEs) of silicon and glass and the temperature coefficient of the Young’s modulus of silicon, the sensitivity of the natural frequency to temperature change was analyzed. A stress isolation mechanism composed of annular isolators and a rigid frame is proposed to prevent the structure inside the frame from being subjected to thermal stresses. DETFs without and with one- or two-stage isolation frames with the orientations <110> and <100> were designed, the stress and natural frequency variations with temperature were simulated and measured. The experimental results show that in the temperature range of −50 °C to 85 °C, the stress varied from −18 MPa to 10 MPa in the orientation <110> and −11 MPa to 5 MPa in the orientation <100>. For the 1-stage isolated DETF of <110> orientation, the measured stress variation was only 0.082 MPa. The thermal stress can be mostly rejected by a stress isolation structure, which is applicable in the design of stress-sensitive MEMS sensors and actuators.

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