Electrical Characteristics of Fluorine Passivated MOCVD-TiO2 Film on (NH4)2Sx Treated GaAs

2008 ◽  
Vol 368-372 ◽  
pp. 232-234
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Tsung Hsiang Shih ◽  
Chen Lia Ho ◽  
Hung Chang Lee ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electric Fields ◽  
Energy Gap ◽  
Compound Semiconductor ◽  
Tio2 Films ◽  
Electrical Characteristics ◽  
Liquid Phase Deposition ◽  
Native Oxides ◽  
P Type ◽  
Surface Fermi Level

The high Dit is the major problem of III-V compound semiconductor MOSFET, which causes the pinning of the surface Fermi level near the middle of the energy gap. The GaAs with (NH4)2Sx treatment (S-GaAs) can remove the native oxides on GaAs and prevent it from oxidizing. The electrical characteristics of fluorinated polycrystalline TiO2 films deposited on p-type(100) S-GaAs were investigated. The fluorine from liquid phase deposition solution can passivate the grain boundary of polycrystalline TiO2 prepared by MOCVD. The leakage current through the grain boundaries was suppressed. The leakage current of MOCVD-TiO2/S-GaAs can be improved from 6.8 x 10-6 and 0.2 A/cm2 to 3.41 x 10-7 and 1.13 x 10-6A/cm2 under positive and negative electric fields at 1.5 MV/cm, respectively. Dit and k can be improved from 1.44 x 1012 cm-2eV-1 to 4.6 x 1011 cm-2eV-1 and 52 to 65, respectively. The effective oxide charges can be improved from 2.5 x 1012 C/cm-2 to 9.3 x 1011 C/cm-2.

Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Mos Capacitor ◽  
Native Oxides ◽  
Layer Deposition ◽  
High Dielectric ◽  
P Type

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging

2016 ◽  
Vol 858 ◽  
pp. 405-409 ◽  
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Roozbeh Bonyadi ◽  
Vishal Ajit Shah ◽  
C.A. Fisher ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Turn On ◽  
State Behaviour ◽  
P Type ◽  
Soft Breakdown ◽  
Current Behaviour

In this paper the results of a study in which the surface quality of 30, 35 and 110 µm 4H-SiC epitaxial layers from different manufacturers are evaluated using AFM and photoluminescence (PL) imaging. PiN diodes are then intentionally fabricated on triangular defects and polytypes grains which are formed, in order to understand their impact on the resulting electrical characteristics, which includes on-state behaviour, turn-on characteristics and reverse leakage current behaviour. The results indicate that the defects form a high resistance short through the p-type anode. This results in higher leakage current, well over 108 times higher than the devices formed off-defect. PiN diodes fabricated on-defect also suffered from soft breakdown unlike those off-defect.

Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides

2006 ◽  
Author(s):  
Douglas C. Hall ◽  
Patrick J. Fay ◽  
Thomas H. Kosel ◽  
Bruce A. Bunker ◽  
Russell D. Dupuis
Keyword(s):  
Electronic Properties ◽  
Compound Semiconductor ◽  
Native Oxides ◽  
Device Applications

Switching the electrical characteristics of TiO2 from n-type to p-type by ion implantation

2021 ◽  
pp. 150274
Author(s):  
Adriano Panepinto ◽  
Arnaud Krumpmann ◽  
David Cornil ◽  
Jérôme Cornil ◽  
Rony Snyders
Keyword(s):  
Ion Implantation ◽  
Electrical Characteristics ◽  
P Type

Adjustable electrical characteristics in hybrid Si/PEDOT:PSS core/shell nanowire hetero-junctions

2017 ◽  
Vol 5 (16) ◽  
pp. 3932-3936 ◽  
Author(s):  
Wenhui Lu ◽  
Shuai Zhang ◽  
Enqi Dai ◽  
Bin Miao ◽  
Yiran Peng ◽  
...  
Keyword(s):  
Core Shell ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
P Type

Si/PEDOT:PSS core/shell nanowire hetero-junctions with adjustable electrical characteristics are reported. They exhibit an ohmic behavior ascribed to p-type Si/PEDOT:PSS, whereas n-type Si/PEDOT:PSS displays a rectifying nature.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

A STUDY OF THE ELECTRICAL PROPERTIES OF Al2O3 FILMS DEPOSITED ON GaAs SUBSTRATES BY SPRAY PYROLYSIS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1637-1640 ◽  
Author(s):  
J. CHAVEZ-RAMIREZ ◽  
M. AGUILAR-FRUTIS ◽  
M. GARCIA ◽  
E. MARTINEZ ◽  
O. ALVAREZ-FREGOSO ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Spray Pyrolysis ◽  
Electric Fields ◽  
Dielectric Breakdown ◽  
Spray Pyrolysis Technique ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Gaas Substrates

Electrical characteristics of high quality aluminum oxide thin films deposited by the spray pyrolysis technique on GaAs substrates are reported. The films were deposited using a spraying solution of aluminum acetylacetonate in N,N-dimethylformamide and an ultrasonic mist generator. The substrates were (100) GaAs wafers Si-doped (1018 cm -3). The substrate temperature during deposition was in the range of 300–600°C. The electrical characteristics of these films were determined by capacitance and current versus voltage measurements by the incorporation of these films into metal-oxide-semiconductor structures. The interface state density resulted in the order of 1012 1/ eV-cm 2 and the films can stand electric fields higher than 5 MV/cm, without observing a destructive dielectric breakdown. The refractive index, measured by ellipsometry at 633 nm, resulted close to 1.64. The determination of the chemical composition of the films was achieved by energy dispersive X-ray spectroscopy; it resulted close to that of stoichiometric aluminum oxide (O/Al = 1.5) when films are deposited at substrate temperatures of 300–350°C.

Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa
Keyword(s):  
Leakage Current ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Tio2 Films ◽  
Gate Leakage Current ◽  
Poly Vinylidene Fluoride ◽  
Doped Zno ◽  
Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

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