Thermo-Mechanical Reliability of 1200V-450A IGBT Module Considering Voids in the Solder Layer

2019 ◽  
Vol 954 ◽  
pp. 202-209
Author(s):  
Xin Hua Guo ◽  
Guang Deng Yang ◽  
Jin Yuan Fu ◽  
Ke Huang
Keyword(s):  
Inelastic Strain ◽  
The Finite Element Method ◽  
Power Cycling ◽  
Power Modules ◽  
Igbt Module ◽  
Before And After ◽  
Bonding Wires ◽  
Transient Thermal ◽  
Strain Increase ◽  
Ansys Workbench

1200V-450A IGBT power modules are fabricated in this paper. We study both the steady state and transient thermal performance of the IGBT assemblies by the finite element method using commercial software ANSYS Workbench to better understand the characteristic. Furthermore, power cycling tests indicate that inelastic strain increase as the numbers of cycles increase. In addition, X-ray photographs and ultrasound scan images were compared before and after the experiment. The thrust force of bonding wires decrease with increasing numbers of cycles, as indicated by tested.

scholarly journals Effect of load sequence interaction on bond-wire lifetime due to power cycling

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zoubir Khatir ◽  
Son-Ha Tran ◽  
Ali Ibrahim ◽  
Richard Lallemand ◽  
Nicolas Degrenne
Keyword(s):  
High Stress ◽  
Bipolar Transistors ◽  
Junction Temperature ◽  
Experimental Investigations ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wire ◽  
Load Sequence ◽  
The Difference ◽  
Heating Duration

AbstractExperimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$ Δ T j ) and the heating duration ($$t_{ON}$$ t ON ) are investigated. First, power cycling tests with single conditions (in $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON ), are performed in order to serve as test references. Then, combined power cycling tests with two-level stress conditions have been done sequentially. These tests are carried-out in the two sequences: low stress/high stress (LH) and high stress/low stress (HL) for both $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON . The tests conducted show that a sequencing in $$\Delta T_{j}$$ Δ T j regardless of the direction “high-low” or “low–high” leads to an acceleration of degradations and so, to shorter lifetimes. This is more pronounced when the difference between the stress levels is large. With regard to the heating duration ($$t_{ON}$$ t ON ), the effect seems insignificant. However, it is necessary to confirm the effect of this last parameter by additional tests.

scholarly journals Fatigue Damage of Al/SiC Composites - Macroscopic and Microscopic Analysis

2015 ◽  
Vol 60 (1) ◽  
pp. 101-105 ◽  
Author(s):  
A. Rutecka ◽  
Z.L. Kowalewski ◽  
K. Makowska ◽  
K. Pietrzak ◽  
L. Dietrich
Keyword(s):  
Fatigue Damage ◽  
Microscopic Analysis ◽  
Inelastic Strain ◽  
Damage Parameter ◽  
Fatigue Tests ◽  
Cyclic Plasticity ◽  
Damage Mechanisms ◽  
Before And After ◽  
Fatigue Damage Parameter ◽  
Sic Composites

Abstract The results of comparative examinations of mechanical behaviour during fatigue loads and microstructure assessment before and after fatigue tests were presented. Composites of aluminium matrix and SiC reinforcement manufactured using the KoBo method were investigated. The combinations of two kinds of fatigue damage mechanisms were observed. The first one governed by cyclic plasticity and related to inelastic strain amplitude changes and the second one expressed in a form of ratcheting based on changes in mean inelastic strain. The higher SiC content the less influence of the fatigue damage mechanisms on material behaviour was observed. Attempts have been made to evaluate an appropriate fatigue damage parameter. However, it still needs further improvements.

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Life Time ◽  
Junction Temperature ◽  
Limiting Factors ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model

2014 ◽  
Vol 986-987 ◽  
pp. 823-827
Author(s):  
Qing Yuan Zheng ◽  
Min You Chen ◽  
Bing Gao ◽  
Nan Jiang
Keyword(s):  
Thermal Stress ◽  
Stress Distribution ◽  
Uniform Distribution ◽  
Inelastic Strain ◽  
Coupling Model ◽  
Power Module ◽  
Mechanical Coupling ◽  
Fem Method ◽  
Igbt Module ◽  
Solder Layer

Reliability of IGBT power module is one of the biggest concerns regarding wind power system, which generates the non-uniform distribution of temperature and thermal stress. The effects of non-uniform distribution will cause failure of IGBT module. Therefore, analysis of thermal mechanical stress distribution is crucially important for investigation of IGBT failure mechanism. This paper uses FEM method to establish an electrical-thermal mechanical coupling model of IGBT power module. Firstly, thermal stress distribution of solder layer is studied under power cycling. Then, the effects of initial failure of solder layer on the characteristic of IGBT module is investigated. Experimental results indicate that the strain energy density and inelastic strain are higher which will reduce reliability and lifetime of power modules.

Precision Evaluation for Thermal Fatigue Life of Power Module Using Coupled Electrical-Thermal-Structural Analysis

2011 ◽  
Author(s):  
Tomohiro Takahashi ◽  
Qiang Yu ◽  
Masahiro Kobayashi
Keyword(s):  
Fatigue Life ◽  
Temperature Distribution ◽  
Solder Joint ◽  
Thermal Fatigue ◽  
Thermal Structure ◽  
Inelastic Strain ◽  
Power Module ◽  
Thermal Fatigue Life ◽  
Power Cycling ◽  
Precision Evaluation

For power module, the reliability evaluation of thermal fatigue life by power cycling has been prioritized as an important concern. Since in power cycling produces there exists non-uniform temperature distribution in the power module, coupled thermal-structure analysis is required to evaluate thermal fatigue mechanism. The thermal expansion difference between a Si chip and a substrate causes thermal fatigue. In this study, thermal fatigue life of solder joints on power module was evaluated. The finite element method (FEM) was used to evaluate temperature distribution induced by joule heating. Higher temperature appears below the Al wire because the electric current flows through the bonding Al wire. Coupled thermal-structure analysis is also required to evaluate the inelastic strain distribution. The damage of each part of solder joint can be calculated from equivalent inelastic strain range and crack propagation was simulated by deleting damaged elements step by step. The initial cracks were caused below the bonding Al wire and propagated concentrically under power cycling. There is the difference from environmental thermal cycling where the crack initiated at the edge of solder layer. In addition, in order to accurately evaluate the thermal fatigue life, the factors affecting the thermal fatigue life of solder joint where verified using coupled electrical-thermal-structural analysis. Then, the relation between the thermal fatigue life of solder joint and each factor is clarified. The precision evaluation for the thermal fatigue life of power module is improved.

The Micro-Temperatures of the Peaks and Valleys of Sliding Rough Surfaces

2018 ◽  
Vol 883 ◽  
pp. 53-62 ◽  
Author(s):  
Shin Yuh Chern ◽  
Jeng Haur Horng ◽  
Cheng Han Tsai ◽  
Hung Jung Tsai
Keyword(s):  
Thermal Conductivity ◽  
Temperature Rise ◽  
Rough Surfaces ◽  
Chemical Processes ◽  
The Finite Element Method ◽  
Precision Control ◽  
Sliding Speed ◽  
Surface Failure ◽  
Contact Surfaces ◽  
Transient Thermal

The surface micro-temperature of sliding, rough bodies is an important factor affecting contact properties, such as chemical reactions of automatic injectors for medicine and chemical processes and surface failure of micro-and macro-devices. In this work, the Finite Element Method is used to analyze the micro-temperature of the peaks and valleys of multiplying asperity sliding contact surfaces. The affecting parameters include pressure, roughness, sliding speed, Peclet number, and thermal conductivity of rough surfaces. Analysis results showed that the effects of the studied parameters are different to those of peak and valley temperatures. While pressure increased, the increasing rate of the temperature rise parameter of valleys was larger than those of peaks. The temperature rise of peaks increased as roughness increased. On the contrary, the temperature rise of valleys decreased as roughness increased. Sliding speed and thermal conductivity played the most important roles in affecting the maximum micro-temperature rise. The temperature rise difference between peaks and valleys was almost proportional to thermal conductivity, and was inversely proportional to sliding speed for all cases. This transient thermal analysis enables precision control of interface micro-temperature for micro-moving devices.

Electromigration Analysis of Solder Joints for Power Modules Using an Electrical-Thermal-Stress Coupled Model

2021 ◽  
Author(s):  
Mitsuaki Kato ◽  
Takahiro Omori ◽  
Akihiro Goryu ◽  
Tomoya Fumikura ◽  
Kenji Hirohata
Keyword(s):  
Thermal Stress ◽  
Solder Joint ◽  
Power Output ◽  
Solder Joints ◽  
Vacancy Concentration ◽  
Inelastic Strain ◽  
Power Device ◽  
Power Module ◽  
Power Modules ◽  
Rate Of Increase

Abstract Power modules are being developed to increase power output. The larger current densities accompanying increased power output are expected to degrade solder joints in power modules by electromigration. In previous research, numerical analysis of solder for electromigration has mainly examined ball grid arrays in flip-chip packages in which many solder balls are bonded under the semiconductor device. However, in a power module, a single solder joint is uniformly bonded under the power device. Because of this difference in geometric shape, the effect of electromigration in the solder of power modules may be significantly different from that in the solder of flip chips packages. This report describes an electromigration analysis of solder joints for power modules using an electrical-thermal-stress coupled analysis. First, we validate our numerical implementation and show that it can reproduce the vacancy concentrations and hydrostatic stress almost the same as the analytical solutions. We then simulate a single solder joint to evaluate electromigration in a solder joint in a power module. Once inelastic strain appears, the rate of increase in vacancy concentration slows, while the inelastic strain continuously increases. This phenomenon demonstrates that elastic-plastic-creep analysis is crucial for electromigration analysis of solder joints in power modules. Next, the solder joint with a power device and a substrate as used in power modules was simulated. Plasticity-creep and longitudinal gradient generated by current crowding have a strong effect on significantly reducing the vacancy concentration at the anode edge over a long period of time.

650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules

2018 ◽  
Vol 924 ◽  
pp. 822-826
Author(s):  
Jon Q. Zhang ◽  
Matthew McCain ◽  
Brett Hull ◽  
Jeff Casady ◽  
Scott Allen ◽  
...  
Keyword(s):  
Electric Drive ◽  
Power Module ◽  
Switching Losses ◽  
Power Modules ◽  
Igbt Module ◽  
First Time ◽  
Sintering Processes

In this paper, we present our latest results on 650 V 4H-SiC DMOSFET developments for dual-side sintered power modules in electric drive vehicles. A low specific on-resistance (Rsp,on) of 1.8 mΩ⋅cm2has been achieved on 650 V, 7 mΩ 4H-SiC DMOSFETs at 25°C, which increases to 2.4 mΩ⋅cm2at 150°C. For the first time, the DMOSFET chip is designed specifically for use in dual-side soldering and sintering processes, and a 650 V, 1.7 mΩ SiC DMOSFET multichip half bridge power module has been built using the wirebond-free assembly. Compared to a similarly rated Si IGBT module, the conduction and switching losses were reduced by 80% and ~50%, respectively.

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