scholarly journals A Unified Model of Drain Current Local Variability due to Channel Length Fluctuation for an n-channel Eδ DC MOS Transistor

Silicon ◽  
2021 ◽  
Author(s):  
Sarmista Sengupta ◽  
Soumya Pandit
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Unified Model ◽  
Mos Transistor ◽  
Local Variability

scholarly journals A Unified Model of Drain Current Local Variability due to Channel Length Fluctuation for an n-Channel EδDC MOS Transistor

2021 ◽  
Author(s):  
Sarmista Sengupta ◽  
Soumya Pandit
Keyword(s):  
Threshold Voltage ◽  
Computer Aided Design ◽  
Drain Current ◽  
Channel Length ◽  
Model Verification ◽  
Silicon On Insulator ◽  
Compact Model ◽  
Random Fluctuation ◽  
Mos Transistor ◽  
Local Variability

Abstract A drain current local variability compact model due to random fluctuation of channel length induced by line edge roughness/line width roughness ( LER / LWR ) is derived here. The random fluctuation of channel length leads to correlated fluctuations of threshold voltage and effective mobility of the current carriers. Therefore, an unified compact model is required to combine all the causes. Our model is based on the principle of propagation of variance. For the model verification purpose, calibrated technology computer aided design ( TCAD ) simulation platform is extensively used for all possible bias regions and several LER profile parameters. Channel profile optimization is critically studied aiming reduction of ID variability. The model is further extended for SOI (Silicon-on-insulator) transistor and validated with literature data of threshold voltage and on-current variability.

Effect of Technology Scaling on MOS Transistor Performance with High-K Gate Dielectrics

2002 ◽  
Vol 716 ◽  
Author(s):  
Nihar R. Mohapatra ◽  
Madhav P. Desai ◽  
Siva G. Narendra ◽  
V. Ramgopal Rao
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Channel Length ◽  
Mos Transistors ◽  
Short Channel ◽  
Technology Scaling ◽  
Mos Transistor ◽  
Wide Range ◽  
Impact Of Technology ◽  
The Impact

AbstractThe impact of technology scaling on the MOS transistor performance is studied over a wide range of dielectric permittivities using two-dimensional (2-D) device simulations. It is found that the device short channel performance is degraded with increase in the dielectric permittivity due to an increase in dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we observe a substantial coupling between source and drain regions through the gate dielectric. We provide extensive 2-D device simulation results to prove this point. Since much of the coupling between source and drain occurs through the gate dielectric, it is observed that the overlap length is an important parameter for optimizing DC performance in the short channel MOS transistors. The effect of stacked gate dielectric and spacer dielectric on the MOS transistor performance is also studied to substantiate the above observations.

Effect of Varying Memory Device Architectures on the Electrical Properties of P(VDF/TrFE)(72/28) Copolymer Thin Film

2008 ◽  
Vol 54 ◽  
pp. 491-496 ◽  
Author(s):  
Chang Woo Choi ◽  
Arun Anand Prabu ◽  
Sun Yoon ◽  
Yu Min Kim ◽  
Kap Jin Kim
Keyword(s):  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Random Access ◽  
Drain Current ◽  
Random Copolymer ◽  
Memory Device ◽  
Channel Length ◽  
Memory Retention ◽  
Voltage Measurement ◽  
Electrical Measurements

In this study, the dipole switching and non-volatile memory functionality of poly(vinylidene fluoride-trifluoroethylene) (PVDF/TrFE)(72/28 mol%) random copolymer ultrathin films were analyzed. PVDF/TrFE(72/28) used as ferroelectric insulator in varying memory device architectures such as metal-ferroelectric polymer-metal (MFM), MF-insulator-semiconductor (MFIS), MIS and ferroelectric field-effect transistors (FeFET) were examined using different electrical measurements. A maximum data writing speed of 1.69 MHz was calculated from the switching time measured using MFM architecture. Compared to MFM, MFIS device architecture was found to be more suitable for distinguishing the ‘0’ and ‘1’ state using the capacitance-voltage measurement. With FeFET, the measured drain current (Id) as well as its memory window increased with decreasing channel length, thereby enabling the easier identification of ‘0’ and ‘1’ state comparable to the MFIS case. The data obtained from this study will be useful in the fabrication of non-volatile random access memory (NVRAM) devices operating at lower voltage with faster data R/W/E speed and memory retention capability.

scholarly journals The Effect of Doping on Different FET Structures: MOSFET, TFET and FinFET

2020 ◽  
Vol 9 (6) ◽  
pp. 972-979
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Short Channel Effects ◽  
Poor Control ◽  
Short Channel ◽  
Circuit Performance ◽  
The Past ◽  
Channel Effects ◽  
Circuit Density ◽  
Effect Of Doping

MOSFET have been scaled down over the past few years in order to give rise to high circuit density and increase the speed of circuit. But scaling of MOSFET leads to issues such as poor control gate over the current which depends on gate voltage. Many short channel effects (SCE) influence the circuit performance and leads to the indeterminist response of drain current. These effects can be decreased by gate excitation or by using multiple gates and by offering better control gate the device parameters. In Single gate MOSFET, gate electric field decreases but multigate MOSFET or FinFET provides better control over drain current. In this paper, different FET structures such as MOSFET, TFET and FINFET are designed at 22nm channel length and effect of doping had been evaluated and studied. To evaluate the performance donor concentration is kept constant and acceptor concentration is varied.

Top-gate ZnO-based TFTs by RF Sputtering

2007 ◽  
Vol 1035 ◽  
Author(s):  
Shahrukh Khan ◽  
Abbas jamshidi-Roudbari ◽  
Miltiadis Hatalis
Keyword(s):  
Thin Films ◽  
Power Density ◽  
Rf Sputtering ◽  
Visible Spectrum ◽  
Drain Current ◽  
Channel Length ◽  
Zno Thin Films ◽  
Chamber Pressure ◽  
Rf Power ◽  
Bridge Structures

AbstractThis work emphasizes room temperature deposition and fabrication of top-gated staggered structure ZnO-TFTs and integration of ZnO-TFT based simple logic circuits. We synthesized ZnO thin films by RF sputtering in an Ar/Oxygen ambience with no intentional heating of the substrates. The electrical, optical and structural properties of the ZnO thin films can be well-controlled by altering process parameters such as RF power density and relative Oxygen partial pressure. Typical deposition was carried out at a chamber pressure of 15 mTorr, Ar/Oxygen flow rates of 15 sccm/1 sccm and RF power density of 3W/cm2. The resistivity of the as-deposited films was between 104-106 Ù-cm with high optical transparency (>80%) in the visible spectrum and minimal surface roughness as detected by high-resolution AFM imaging. Gated van der Pauw and Kelvin-bridge structures were lithographically patterned to asses ZnO channel resistance. In the completed devices, a dual-stack (Ta2O5/SiO2) dielectric layer was effective in suppressing gate-leakage current below 10 pA and enabled depletion-mode ZnO-TFT operation exhibiting hard saturation. A Ti/Au metallization scheme was adopted to provide good ohmic contact to ZnO. TFTs retained well-behaved transfer characteristics down to a channel length of 4 ìm with on/off drain current ratio exceeding 105, threshold voltage between -15 V to -5 V and inverse sub-threshold slope of around 1.75 V/decade.

scholarly journals Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 538
Author(s):  
Farhad Larki ◽  
Md Shabiul Islam ◽  
Arash Dehzangi ◽  
Mohammad Tariqul Islam ◽  
Hin Yong Wong
Keyword(s):  
Computer Aided Design ◽  
Three Dimensional ◽  
Drain Current ◽  
Channel Length ◽  
Influential Factors ◽  
Gate Length ◽  
Current Characteristics ◽  
Lateral Gate ◽  
The Impact ◽  
Gate Design

In this paper, we investigate the effect of lateral gate design on performance of a p-type double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of lateral gate length, which modifies the real channel length of the device and gate gap variation down to 50 nm which have been found to be the most influential factors in the performance of the device have been comprehensively investigated. The characteristics are demonstrated and compared with a nominal DGJLTs through three-dimensional technology computer-aided design (TCAD) simulation. At constant channel geometry (thickness and width), when the lateral gate length decreases, the results show constant flatband drain current characteristics while the OFF state current (IOFF) increases significantly. On the other hand, by decreasing the air gap the subthreshold current considerably decreases while the flatband current is constant. Moreover, at a certain gate gap, the gates lose control over the channel and the device simply works as a resistor. Electric field component, carriers’ density, band edge energies, and recombination rate of the carriers inside the channel in depletion and accumulation regimes are analysed to interpret the variation of output characteristics.

Fabrication and Electrical Studies of P(VDF/TrFE)(72/28) Copolymer based Non-Volatile Memory Devices as a Function of Varying Device Structures

2008 ◽  
Vol 1071 ◽  
Author(s):  
Kap Jin Kim ◽  
Chang Woo Choi ◽  
Arun Anand Prabu ◽  
Sun Yoon
Keyword(s):  
Random Access ◽  
Drain Current ◽  
Memory Device ◽  
Channel Length ◽  
Memory Retention ◽  
Electrical Measurements ◽  
Device Structure ◽  
Retention Capacity ◽  
Non Volatile Memory ◽  
Polymer Metal

AbstractFerroelectric characteristics of poly(vinylidiene fluoride/trifluoroethylene) (P(VDF/TrFE) (72/28 mol%)) copolymer ultrathin films used as an insulator in varying memory device architectures such as metal-ferroelectric polymer-metal (MFM), MF-insulator-semiconductor (MFIS), MIS and organic field-effect transistor (OFET) were studied using different electrical measurements. A maximum data writing speed of 1.69 MHz was calculated from the switching time measured using MFM architecture. Capacitance-voltage measured using MFIS was found to be more suitable for distinguishing the ‘0’ and ‘1’ state compared to MFM device structure. In OFET, the decreasing channel length increased the measured drain current (Id) values as well as its memory window enabling easier identification of the ‘0’ and ‘1’ state comparable to MFIS case. The data obtained from this study will be useful in the fabrication of non-volatile random access memory (NVRAM) devices with faster data R/W/E speed and memory retention capacity.

scholarly journals Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
C. H. Yu ◽  
X. Y. Chen ◽  
X. D. Luo ◽  
W. W. Xu ◽  
P. S. Liu
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Gate Oxide ◽  
Channel Length ◽  
Next Generation ◽  
Short Channel ◽  
Channel Effects ◽  
Operating Limits ◽  
Low Dimensional ◽  
Interface Passivation

The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and highkgate oxide HfO2layer have been investigated in detail. The influences of Si IPL thickness, gate oxide HfO2thickness, the doping depth, and concentration of source and drain layer on output and transfer characteristics of the MOSFET at fixed gate or drain voltages have been individually simulated and analyzed. The determination of the above parameters is suggested based on their effect on maximum drain current, leakage current, saturated voltage, and so forth. It is found that the channel length decreases with the increase of the maximum drain current and leakage current simultaneously. Short channel effects start to appear when the channel length is less than 0.9 μm and experience sudden sharp increases which make device performance degrade and reach their operating limits when the channel length is further lessened down to 0.5 μm. The results demonstrate the usefulness of short channel simulations for designs and optimization of next-generation electrical and photonic devices.

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