scholarly journals Enhanced Quality of Wafer‐Scale MoS 2 Films by a Capping Layer Annealing Process

2020 ◽  
Vol 30 (11) ◽  
pp. 1908040 ◽  
Author(s):  
Xiangming Xu ◽  
Chenhui Zhang ◽  
Mrinal K. Hota ◽  
Zhixiong Liu ◽  
Xixiang Zhang ◽  
...  
Keyword(s):  
Annealing Process ◽  
Capping Layer ◽  
Wafer Scale

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Raman studies of reactive DC-magnetron sputtered thin films of YBaCuO on MgO

1989 ◽  
Vol 4 (6) ◽  
pp. 1312-1319 ◽  
Author(s):  
K. C. Sheng ◽  
S. J. Lee ◽  
Y. H. Shen ◽  
X. K. Wang ◽  
E. D. Rippert ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Critical Temperature ◽  
Impurity Content ◽  
Superconducting Films ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Zero Resistance ◽  
Thermal Annealing Process

Raman spectroscopy was employed to study Y–Ba–Cu–O films prepared by multilayer, reactive sputtering from separate Y, Cu, and Ba0.5Cu0.5 targets. A set of films having the composition YxBa2CuyOz with 0.7 < x < 1.8 and 2.8 < y < 3.5 and critical temperature with zero resistance, Tc(R = 0), ranging from 25 to 90 K was studied with the Raman technique. The correlation between Raman data and critical temperature, Tc, was investigated. This technique provides important information concerning the film crystallinity, homogencity, and impurity content (including other phases) which is useful in judging the quality of high Tc superconducting films. We also found that the rapid thermal annealing process is a very efficient way to reduce chemical reactions between the film and the substrate.

Effect of Atmosphere and Holding Time on the Quality of Surface and Mechanical Properties of the Cold-Rolling Plate of Fe-42% Ni (4J42)

2012 ◽  
Vol 560-561 ◽  
pp. 655-660
Author(s):  
Li Juan Li ◽  
Li Hua Liu ◽  
Jing Wang
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Yield Strength ◽  
Cold Rolling ◽  
Surface Quality ◽  
Annealing Process ◽  
Holding Time ◽  
Annealing Condition ◽  
Nitrogen Ratio

In order to guide atmosphere annealing process in industry, the effect of atmosphere and holding times on the surface quality and mechanical properties of the cold-rolling plate of Fe-42% Ni (4J42) was studied. It is found that in the laboratory, surface qualities of all the samples annealed at different annealing condition are all good enough. When the ratio of hydrogen and nitrogen is below 70%:30%, at different holding time, with increasing of H2 proportion, 4J42’s tensile strength and yield strength all increases, and the hardness declines. And except H2:N2=70%:30, when holding time is less than or equal to 1.2min, at different ratio of hydrogen and nitrogen, holding time will influence 4J42’s mechanical properties little. So combine requires in industry with the experiment results, it can be concluded that for 4J42 alloy, annealing at atmosphere of hydrogen nitrogen ratio is less than 70%:30% for about 1.2min is appropriate to atmosphere annealing process in industry.

Growth and Characterization of PZT Thin Films

2008 ◽  
Author(s):  
Daqun Bao ◽  
Yi Zhang ◽  
Hang Guo
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Annealing Process ◽  
Pzt Thin Films ◽  
X Ray ◽  
Crystallographic Structures ◽  
Strain Equation

This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.

Y1Ba2Cu3O7–x multilayer structures with a thick SiO2 interlayer for multichip modules

1997 ◽  
Vol 12 (11) ◽  
pp. 2947-2951 ◽  
Author(s):  
S. Afonso ◽  
K. Y. Chen ◽  
Q. Xiong ◽  
Y. Q. Tang ◽  
G. J. Salamo ◽  
...  
Keyword(s):  
Stress Relief ◽  
Annealing Process ◽  
Yttria Stabilized Zirconia ◽  
Multilayer Structures ◽  
Low Dielectric Constant ◽  
Multichip Modules ◽  
Stabilized Zirconia ◽  
Ybco Layer ◽  
Low Dielectric

For high temperature superconducting multichip modules and other related electronic applications, it is necessary to be able to fabricate several Y1Ba2Cu3O7–x (YBCO) layers separated by thick low dielectric constant dielectric layers. In this work, we report the successful fabrication of YBCO/YSZ/SiO2 (1–2 μm)/YSZ/YBCO multilayer structures on single crystal yttria stabilized zirconia (YSZ) substrates. In contrast to previously reported work, the top YBCO layer did not show any cracking. This is due to a technique that allows for stress relief in the SiO2 layer before the second YBCO layer is deposited. The top YBCO layer in our multilayer structure had Tc = 87 K and Jc = 105 A/cm2 (at 77 K), whereas the bottom YBCO layer had Tc = 90 K and Jc = 1.2 × 106 A/cm2 (at 77 K). We also showed that the quality of the bottom YBCO layer was preserved during the fabrication of the multilayer due to the annealing process during which O2 diffused into the YBCO, replacing the O2 lost during the deposition of the top YBCO layer.

Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

2015 ◽  
Vol 821-823 ◽  
pp. 978-981 ◽  
Author(s):  
Rami Khazaka ◽  
Marc Portail ◽  
P. Vennéguès ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Antiphase Boundaries ◽  
Silicon Growth ◽  
Si Films ◽  
The Impact ◽  
Subsequent Thermal Annealing

We evaluate the influence of the growth parameters on the crystal quality of Si films grown by chemical vapor deposition on 3C-SiC(001)/Si (001) epilayers. It is shown that the pressure plays a major role on the final quality of the films, with two distinct growth regimes. The defects in the films were found to be antiphase boundaries and μ-twins. The influence of the growth parameters as well as the 3CSiC structural properties on these defects are discussed. The impact of a subsequent thermal annealing, under different gas environments, is also investigated and reveals some noticeable differences according to the gas environment used in the annealing process.

STRUCTURAL AND OPTICAL PROPERTIES OF ZnO SYNTHESIZED BY TEMPERATURE GRADIENT THERMAL OXIDATION

2010 ◽  
Vol 17 (05n06) ◽  
pp. 497-503 ◽  
Author(s):  
F. K. YAM ◽  
S. S. TNEH ◽  
Y.-Q. CHAI ◽  
W. S. LAU ◽  
Z. HASSAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Temperature Gradient ◽  
Thermal Oxidation ◽  
Optical Quality ◽  
Annealing Process ◽  
Zno Thin Films ◽  
Structural And Optical Properties ◽  
Fixed Temperature

In this work, a series of polycrystalline ZnO samples have been synthesized from Zn thin films deposited on Si (100) substrates by using thermal oxidation technique. The ZnO thin film samples grown by this technique were then characterized by a variety of structural and optical characterization tools. The results revealed that the use of novel annealing process i.e. the application of temperature gradient in the thermal treatment could enhance the structural and optical quality of the ZnO thin films significantly as compared to the normal annealing process, i.e. a fixed temperature under different durations. Apart from the improvement of structural and optical properties of ZnO thin films, another striking feature of this novel annealing process was the promotion of the growth of ZnO nanostructures.

Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC

2011 ◽  
Vol 679-680 ◽  
pp. 417-420
Author(s):  
H. Schmitt ◽  
Volker Haeublein ◽  
Anton J. Bauer ◽  
Lothar Frey
Keyword(s):  
Surface Roughness ◽  
Contact Resistance ◽  
Carrier Mobility ◽  
Annealing Process ◽  
Specific Contact Resistance ◽  
High Dose ◽  
Capping Layer ◽  
Implantation Temperature ◽  
Specific Contact ◽  
The Impact

The impact of implantation temperature and dose as well as the annealing process with and without a graphite capping layer on surface roughness, carrier mobility and specific contact resistance are investigated and compared. The use of the capping layer is proven to be particularly advantageous: (1) a deterioration of surface roughness can be avoided even for high dose implantations and (2) the specific contact resistance is reduced. Furthermore, it is shown that a capping layer prevents surface contamination during annealing.

scholarly journals Manufacturing Process beyond Conventional Plasticity Theory: Case Study in Manufacturing Low Spring Index Coil

2020 ◽  
Vol 1 (2) ◽  
pp. 98-104
Author(s):  
Yunan Prawoto ◽  
Sonia Manville ◽  
T Sakai ◽  
M Tanaka ◽  
T Gnauple-Herold
Keyword(s):  
Residual Stress ◽  
Fracture Mechanics ◽  
Material Properties ◽  
Manufacturing Process ◽  
Annealing Process ◽  
Plasticity Theory ◽  
Coil Spring ◽  
Academic World

In the academic world, conventional plasticity theory limits the cold process due to energy inefficiency, material properties and residual stress that may inhibit the quality of a product, and therefore usually not recommended. However, industrial competition pushes that limits against the edge. Knowing the consequences in advance helps reducing the damage that may have been caused by such a violation. This paper shows an example in the form of a case study. A coil spring with a very low spring index that academically suggested to be made using hot process was attempted to be manufactured using cold coiling machine. The case study shows that although it is possible, extra careful and timely handling must be done to successfully manufacture it. A coil with excessive residual stress is shown in this paper. That residual stress alone was capable in damaging the coil during manufacturing. The defect takes place after coiling and before tempering process. A fracture mechanics was used to analyze the failure, which is the splitting due to excessive residual stress. The case study also shows that the problem can be solved by speedy and subsequent stress relieve annealing process.

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