Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).