High speed and leakage-tolerant domino circuits for high fan-in applications in 70nm CMOS technology

2008 ◽  
Author(s):  
Farshad Moradi ◽  
Dag.T. Wisland ◽  
Hamid Mahmoodi ◽  
TuanVu Cao
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
Domino Circuits

A Novel Method to Control Leakage and Noise in Domino Circuit for Wide Fan-in OR Logic

2021 ◽  
pp. 2250055
Author(s):  
Ankur Kumar ◽  
R. K. Nagaria
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Noise Immunity ◽  
Cmos Technology ◽  
Threshold Current ◽  
Delay Condition ◽  
Noise Margin ◽  
Novel Method ◽  
Domino Circuits

This paper proposes a novel method to control leakage and noise in domino circuits for wide fan-in OR logic with low power consumption, low process variation, and higher noise margin under the similar delay condition. In the proposed method, output and dynamic nodes are isolated from the PDN (Pull-Down Network) to improve the noise immunity and reduce switching activity. Further, with the aid of a transistor in the stack, the sub-threshold current is reduced. Thus, the proposed domino is applicable for high-speed and low-power applications in deep sub-micro-range. Simulation results show that the proposed domino improves the noise immunity and figure of merit (FOM) by factors of 1.95 and 2.34, respectively, with respect to the conventional domino with a footer. Along with this improvement, 26% reduction is also observed in power consumption. The entire simulations for all the domino circuits are done at 45-nm CMOS technology by using SPECTRE simulator under the Cadence Virtuoso environment.

Projected Performance of Sub-10 nm GaN-based Double Gate MOSFETs

2017 ◽  
Vol 2 (2) ◽  
pp. 15-19 ◽  
Author(s):  
Md. Saud Al Faisal ◽  
Md. Rokib Hasan ◽  
Marwan Hossain ◽  
Mohammad Saiful Islam
Keyword(s):  
High Speed ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Channel Length ◽  
Capacitive Coupling ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel ◽  
Channel Effects ◽  
Silvaco Atlas

GaN-based double gate metal-oxide semiconductor field-effect transistors (DG-MOSFETs) in sub-10 nm regime have been designed for the next generation logic applications. To rigorously evaluate the device performance, non-equilibrium Green’s function formalism are performed using SILVACO ATLAS. The device is turn on at gate voltage, VGS =1 V while it is going to off at VGS = 0 V. The ON-state and OFF-state drain currents are found as 12 mA/μm and ~10-8 A/μm, respectively at the drain voltage, VDS = 0.75 V. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are ~69 mV/decade and ~43 mV/V, which are very compatible with the CMOS technology. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate. The SS and DIBL are decreased with increasing the underlap length (LUN). Though the source to drain resistance is increased for enhancing the channel length, the underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN-based DG-MOSFETs as one of the excellent promising candidates to substitute currently used MOSFETs for future high speed applications.

scholarly journals The Demonstration of S2P (Serial-to-Parallel) Converter with Address Allocation Method Using 28 nm CMOS Technology

2021 ◽  
Vol 11 (1) ◽  
pp. 429
Author(s):  
Min-Su Kim ◽  
Youngoo Yang ◽  
Hyungmo Koo ◽  
Hansik Oh
Keyword(s):  
Integrated Circuits ◽  
Embedded System ◽  
Low Power ◽  
High Speed ◽  
Cmos Technology ◽  
Clock Frequency ◽  
Clock Generation ◽  
Allocation Method ◽  
Evaluation Board ◽  
28 Nm

To improve the performance of analog, RF, and digital integrated circuits, the cutting-edge advanced CMOS technology has been widely utilized. We successfully designed and implemented a high-speed and low-power serial-to-parallel (S2P) converter for 5G applications based on the 28 nm CMOS technology. It can update data easily and quickly using the proposed address allocation method. To verify the performances, an embedded system (NI-FPGA) for fast clock generation on the evaluation board level was also used. The proposed S2P converter circuit shows extremely low power consumption of 28.1 uW at 0.91 V with a core die area of 60 × 60 μm2 and operates successfully over a wide clock frequency range from 5 M to 40 MHz.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

A 25 Gbps VCSEL driving ASIC: an attempt for ultra-high-speed front-end readout applications

2022 ◽  
Vol 17 (01) ◽  
pp. C01040
Author(s):  
C. Zhao ◽  
D. Guo ◽  
Q. Chen ◽  
N. Fang ◽  
Y. Gan ◽  
...  
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
Test Results ◽  
Eye Diagram ◽  
Optical Links ◽  
Optical Module ◽  
Active Feedback ◽  
High Bandwidth ◽  
Output Driver ◽  
Very High

Abstract This paper presents the design and the test results of a 25 Gbps VCSEL driving ASIC fabricated in a 55 nm CMOS technology as an attempt for the future very high-speed optical links. The VCSEL driving ASIC is composed of an input equalizer stage, a pre-driver stage and a novel output driver stage. To achieve high bandwidth, the pre-driver stage combines the inductor-shared peaking structure and the active-feedback technique. A novel output driver stage uses the pseudo differential CML driver structure and the adjustable FFE pre-emphasis technique to improve the bandwidth. This VCSEL driver has been integrated in a customized optical module with a VCSEL array. Both the electrical function and optical performance have been fully evaluated. The output optical eye diagram has passed the eye mask test at the data rate of 25 Gbps. The peak-to-peak jitter of 25 Gbps optical eye is 19.5 ps and the RMS jitter is 2.9 ps.

scholarly journals High-Speed Hybrid-Logic Full Adder Using High-Performance 10-T XOR–XNOR Cell

2021 ◽  
pp. 263-269
Author(s):  
Tejaswini M. L ◽  
Aishwarya H ◽  
Akhila M ◽  
B. G. Manasa
Keyword(s):  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Cmos Technology ◽  
Power Performance ◽  
High Speed Design ◽  
Power Delay Product ◽  
Full Swing ◽  
Output Swing ◽  
High Output

The main aim of our work is to achieve low power, high speed design goals. The proposed hybrid adder is designed to meet the requirements of high output swing and minimum power. Performance of hybrid FA in terms of delay, power, and driving capability is largely dependent on the performance of XOR-XNOR circuit. In hybrid FAs maximum power is consumed by XOR-XNOR circuit. In this paper 10T XOR-XNOR is proposed, which provide good driving capabilities and full swing output simultaneously without using any external inverter. The performance of the proposed circuit is measured by simulating it in cadence virtuoso environment using 90-nm CMOS technology. This circuit outperforms its counterparts showing power delay product is reduced than that of available XOR-XNOR modules. Four different full adder designs are proposed utilizing 10T XOR-XNOR, sum and carry modules. The proposed FAs provide improvement in terms of PDP than that of other architectures. To evaluate the performance of proposed full adder circuit, we embedded it in a 4-bit and 8-bit cascaded full adder. Among all FAs two of the proposed FAs provide the best performance for a higher number of bits.

scholarly journals IMPLEMENTATION BASED ON 0.18 µM CMOS TECHNIQUES FOR DIGITAL PLL SYNTHESIZER IN LOW LOCKING TIME

2020 ◽  
Vol 9 (9) ◽  
pp. 91-98
Keyword(s):  
High Speed ◽  
Switch Cost ◽  
Energy Systems ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Laptop Computer ◽  
Purification Technique ◽  
General Object ◽  
Published Research ◽  
Diamond Ring

Synthesizer suggests the chief feature element of clocking around modern-day high-speed energy systems. Every time appreciated seeing that for a phase-locked land (PLL), numbers synthesizers illustrate fantastic precision and even now let general object rendering linked with programmable numbers switching. While doing this dissertation lots of people deliver a certainly better model linked with Steadiness synthesizer coupled with focused on ugly Steadiness synthesizers implementing An electronic digital PLL. A persons vision might be globally placing and also specifications because of the straightforward varieties in the An electronic digital PLL: phase-frequency system, bill tubing, land purification technique, present-day dictated oscillator (VCO) coupled with programmable divider. This particular emulator achievement in the An electronic digital PLL implementing perhaps the most common 0.18µd CMOS technology around Piquance illustrate a fast wrapping up effort frame tremendous numbers range. This particular acquire length of time could be tailored via altering ones own bill tubing latest also,the land purification technique capacitor. PFD (Phase Steadiness Detector) marketplace forestalling deviation in the bill tubing marketplace under the founded problem might be designed. That comprehension of the LPF needs the published research within the land individual in the PLL. Encapsulating the perfect tradeoffs for illustration acquire alter, acquire an important portions of knowledge switch cost, this will likely often be simply just ones own tricky obstruct so that you can design. To acquire wider production numbers concentrating on alter, bigger capacitance is vital (i.e., great area). Which will boost the occasionally keeps going free of boost laptop computer food put usage, The project acknowledges some form of voltage-controlled oscillator (VCO) implementing a diamond ring diamond ring linked with single-ended current-starved oscillator can present tremendous jogging frequencies.

Sign in / Sign up

Export Citation Format

Share Document