A Low Temperature, Non-Aggressive Wafer Level Hermetic Package With UV Cured SU8 Bond

Author(s):  
Yexian Wu ◽  
Guanrong Tang ◽  
Jing Chen

In this paper, we present a new technique that could realize wafer level 3-D hermetic package in a very low bonding temperature (120°C) for MEMS (Micro-electro-mechanical Systems) devices. Microcavities were etched on a host glass wafer and were bonded with a carrier silicon wafer. MicroChem SU-8 photoresist is used as the intermediate adhesive layer between the host and carrier wafer. The devices were fabricated by self-aligning etching technique and were finally sealed by coating the structures with sputtered aluminum. Helium leak testing is carried out to verify the hermetic characteristics of the package, 99.7% of the tested devices were qualified. This technology shows a significant improvement of the hermeticity properties of adhesive bonded cavities, making it particularly suitable for applications on gas-tightness with low temperature, non-aggressive demands.

Author(s):  
Yi Tao ◽  
Ajay P. Malshe ◽  
W. D. Brown

In this work, low temperature selective solder (Pb37/Sn63) bonding of silicon chips or wafers for MEMS applications using a continuous wave (CW) carbon dioxide (CO2) laser at a wavelength of 10.6μm was examined. The low reflectivity, fair transmittance, and high absorptivity of silicon at the 10.6μm wavelength led to selective heating of the silicon and reflow of an electroplated or screen printed intermediate solder layer which produced silicon-solder-silicon joints. Finite element simulations were carried out to optimize the process parameters in order to achieve uniform heating and minimum induced thermal stress. The bonding process was performed on the fixtures in a vacuum chamber at an air pressure of one milliTorr to achieve fluxless soldering and vacuum encapsulation of silicon dies. The bonding temperature at the sealing ring was close to the reflow temperature of the eutectic lead tin solder, 183°C. Pull test results showed that the joint was sufficiently strong and could not be separated before the silicon die broke. Helium leak testing showed that the leak rate of the package was below 10−8 atm · cc/sec under optimized bonding conditions. The results of the Design of Experiment (DOE) method indicated that both laser incident power and scribe velocity significantly influenced bonding results. This novel method is especially suitable for vacuum bonding wafers containing MEMS and other micro devices with low temperature budgets where managing stress distribution is important. Further, sealed encapsulated and released wafers can be diced without damaging the MEMS devices at wafer scale.


2012 ◽  
Vol 2012 (DPC) ◽  
pp. 1-24
Author(s):  
Michael Gallagher ◽  
Jong-Uk Kim ◽  
Eric Huenger ◽  
Kai Zoschke ◽  
Christina Lopper ◽  
...  

3D stacking, one of the 3D integration technologies using through silicon vias (TSVs), is considered as a desirable 3D solution due to its cost effectiveness and matured technical background. For successful 3D stacking, precisely controlled bonding of the two substrates is necessary, so that various methods and materials have been developed over the last decade. Wafer bonding using polymeric adhesives has advantages. Surface roughness, which is critical in direct bonding and metal-to-metal bonding, is not a significant issue, as the organic adhesive can smooth out the unevenness during bonding process. Moreover, bonding of good quality can be obtained using relatively low bonding pressure and low bonding temperature. Benzocyclobutene (BCB) polymers have been commonly used as bonding adhesives due to their relatively low curing temperature (~250 °C), very low water uptake (<0.2%), excellent planarizing capability, and good affinity to Cu metal lines. In this study, we present wafer bonding with BCB at various conditions. In particular, bonding experiments are performed at low temperature range (180 °C ~ 210 °C), which results in partially cured state. In order to examine the effectiveness of the low temperature process, the mechanical (adhesion) strength and dimensional changes are measured after bonding, and compared with the values of the fully cured state. Two different BCB polymers, dry-etch type and photo type, are examined. Dry etch BCB is proper for full-area bonding, as it has low degree of cure and therefore less viscosity. Photo-BCB has advantages when a pattern (frame or via open) is to be structured on the film, since it is photoimageable (negative tone), and its moderate viscosity enables the film to sustain the patterns during the wafer bonding process. The effect of edge beads at the wafer rim area and the soft cure (before bonding) conditions on the bonding quality are also studied. Alan/Rey ok move from Flip Chip and Wafer Level Packaging 1-6-12.


Author(s):  
J. Wei ◽  
Z. P. Wang ◽  
L. Wang ◽  
G. Y. Li ◽  
Z. Q. Mo

In this paper, anodic bonding between silicon wafer and glass wafer (Pyrex 7740) has been successfully achieved at low temperature. The bonding strength is measured using a tensile testing machine. The interfaces are examined and analyzed by scanning acoustic microscopy (SAM), scanning electron microscopy (SEM) and secondary ion mass spectrometry (SIMS). Prior to bonding, the wafers are cleaned in RCA solutions, and the surfaces become hydrophilic. The effects of the bonding parameters, such as bonding temperature, voltage, bonding time and vacuum condition, on bonding quality are investigated using Taguchi method, and the feasibility of bonding silicon and glass wafers at low temperature is explored. The bonding temperature used ranges from 200 °C to 300 °C. The sensitivity of the bonding parameters is analyzed and it is found that the bonding temperature is the dominant factor for the bonding process. Therefore, the effects of bonding temperature are investigated in detail. High temperatures cause high ion mobility and bonding current density, resulting in the short transition period to the equilibrium state. Almost bubble-free interfaces have been obtained. The bonded area increases with increasing the bonding temperature. The unbonded area is less than 1.5% within the whole wafer for bonding temperature between 200 °C to 300 °C. The bonding strength is higher than 10 MPa, and increases with the bonding temperature. Fracture mainly occurs inside the glass wafer other than in the interface when the bonding temperature is higher than 225 °C. SIMS results show that the chemical bonds of Si-O form in the interface. Higher bonding temperature results in more oxygen migration to the interface and more Si-O bonds. The bonding mechanisms consist of hydrogen bonding and Si-O chemical reaction.


Author(s):  
Qiong Shu ◽  
Juan Su ◽  
Gang Zhao ◽  
Ying Wang ◽  
Jing Chen

In this paper, Ti-Glass anodic bonding is investigated on both chip and wafer level. In concern of coefficients of thermal expansion (CTE) match, three different types of ion-containing glasses are evaluated: Pyrex 7740, D-263T and soda lime glass. By applying a potential between the two chips and heating them beyond 350°C, soda lime glass samples are successfully bonded with titanium. The influence of the bonding temperature on the bonding strength is revealed. For the first time, wafer level Ti-Glass bond is carried out, a 157-μm-thick titanium wafer is successfully bonded to a 1000-μm-thick soda glass wafer at 450°C and applying a voltage of 800V and a force of 1000N for 30min, over 60% of the surface are joined. The results are helpful to define potential applications in certain field of microsystems.


2019 ◽  
Vol 2019 (NOR) ◽  
pp. 000012-000016
Author(s):  
Henri Ailas ◽  
Jaakko Saarilahti ◽  
Tuomas Pensala ◽  
Jyrki Kiihamäki

Abstract In this study, a low temperature wafer-level packaging process aimed for encapsulating MEMS mirrors was developed. The glass cap wafer used in the package has an antireflective (AR) coating that limits the maximum temperature of the bonding process to 250°C. Copper thermocompression was used as copper has a high self-diffusivity and the native oxidation on copper surfaces can be completely removed with combination of ex situ acetic acid wet-etch and in situ forming gas anneal. Making it suitable for a development of a low temperature bonding process. In this work, bonding on of sputtered and electrodeposited copper films was studied on temperatures ranging from 200°C to 300°C as well as the effect of pretreatment on bond strength. The study presents a successful thermocompression bonding process for sputtered Cu films at a low temperature of 200°C with high yield of 97 % after dicing. The bond strength was recorded to be 75 MPa, well above the MIL-STD-883E standard (METHOD 2019.5) rejection limit of 6.08 MPa. The high dicing yield and bond strength suggest that the thermocompression bonding could be possible even at temperatures below 200°C. However, the minimum bonding temperature was not yet determined in this study.


Author(s):  
J. Wei ◽  
B. K. Lok ◽  
P. C. Lim ◽  
M. L. Nai ◽  
H. J. Lu ◽  
...  

In this paper, the development of wafer level packaging of radio frequency (RF) microelectromechanical system (MEMS) is reported. The packaging process consists of wafer bonding, wafer thinning, via etching, plating, under-bump-metallization (UBM) and bumping processes. 6-inch Si and glass wafers are used in the study. RF MEMS devices are fabricated on Si wafers and sandwiched between Si and glass cap wafers. To maintain the pressure balance between the cavities and outside world after bonding process, Si and glass wafers are anodically bonded at a pressure of 2 bar and a bonding temperature of 400 °C. The cavities are hermetically sealed. The glass wafer of the bonded pair is thinned down to 100 μm using mechanical polishing and chemical etching, the good uniformity of the wafer thickness is maintained with etching process. A layer of Cr/Au is sputtered and patterned as the hard mask for glass via etching process. Via holes with undercut closer to the etching depth are formed in HF+HNO3 acid. After stripping the metal mask, a seed layer of TiW/Cu is deposited using sputtering and plating processes. TiW layer is used to enhance the adhesion of metal and glass. With the completion of the re-routing and via metallization processes, benzocyclobutene (BCB) photoresist is used to planarize via holes and opened for UBM process. Finally, the packaged devices can be assembled using flip chip approach.


2003 ◽  
Vol 769 ◽  
Author(s):  
Eric J. Wilhelm ◽  
Joseph Jacobson

AbstractThe reduced melting point and high solubility of inorganic nanoparticles have been shown to be useful in the low-temperature solution-based fabrication of semiconductor devices. These inks have been patterned using various techniques to form inorganic logic elements, multi-layer structures, and MEMS. Here we report a new technique known as offset liquid embossing that is used to print the nanoparticle inks. Structures created include multiple layers of gold and spin-on-glass printed without the need for etching or planarization, and 100 nm resolution.


2017 ◽  
Vol 46 (10) ◽  
pp. 6111-6118 ◽  
Author(s):  
Zijian Wu ◽  
Jian Cai ◽  
Qian Wang ◽  
Junqiang Wang ◽  
Dejun Wang

2016 ◽  
Vol 136 (6) ◽  
pp. 237-243 ◽  
Author(s):  
Shiro Satoh ◽  
Hideyuki Fukushi ◽  
Masayoshi Esashi ◽  
Shuji Tanaka

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