A NOVEL METHOD FOR HIGH-PERFORMANCE PHASE-LOCKED LOOP

2004 ◽  
Vol 13 (01) ◽  
pp. 53-63 ◽  
Author(s):  
YOUNGSHIN WOO ◽  
YOUNG MIN JANG ◽  
MAN YOUNG SUNG
Keyword(s):  
Error Detection ◽  
High Performance ◽  
Supply Voltage ◽  
Dead Zone ◽  
Phase Locked Loop ◽  
Cmos Technology ◽  
Loop Filter ◽  
Detection Range ◽  
Loop Bandwidth ◽  
Novel Method

In this paper, we propose a phase-locked loop (PLL) with dual PFDs and a modified loop filter in which advantages of both PFDs can be combined and the trade-off between acquisition behavior and locked behavior can be achieved. By operating the appropriate PFD connected to the well-adjusted charge pump and regulating the loop bandwidth to input frequency ratio with an input divider and a modified loop filter, an unlimited error detection range, a high frequency operation, a reduced dead zone and a higher speed lock-up time can be achieved. The proposed PLL structure is designed using 1.5 μm CMOS technology with 5 V supply voltage.

Precharged Phase Detector with Zero Dead-Zone and Minimal Blind-Zone

2017 ◽  
Vol 26 (11) ◽  
pp. 1750179 ◽  
Author(s):  
Goran Nikolić ◽  
Goran Jovanović ◽  
Mile Stojčev ◽  
Tatjana Nikolić
Keyword(s):  
High Performance ◽  
Supply Voltage ◽  
Dead Zone ◽  
Building Blocks ◽  
Cmos Technology ◽  
Phase Detector ◽  
Detection Range ◽  
Delay Locked Loop ◽  
Blind Zone ◽  
Bicmos Technology

A precharged CMOS high-performance phase frequency detector (PFD) circuit is presented in this paper. The PFD consists of two identical building blocks. Each PFD block generates UP or DOWN signal and consists of [Formula: see text]- and [Formula: see text]-precharge stages connected in cascade. The proposed PFD circuit has no feedback path and has zero dead-zone in the phase characteristic, what is important in low jitter applications. It also has minimal blind-zone (extended input detection range) close to the limit imposed by the used CMOS technology. The PFD is designed in 0.13[Formula: see text][Formula: see text]m BiCMOS technology and has 1.8[Formula: see text]V supply voltage. The simulation results of blind-zone values are within the range from [Formula: see text] for 1[Formula: see text]GHz up to [Formula: see text] for 8[Formula: see text]GHz. This circuit can be used in applications for high-frequency and low-power delay locked loop and phase locked loop circuits, effectively.

scholarly journals A 4-4.8GHz Adaptive Bandwidth, Adaptive Jitter Phase Locked Loop

2017 ◽  
Vol 7 (2) ◽  
pp. 1473-1477 ◽  
Author(s):  
H. E. Taheri
Keyword(s):  
Pump Current ◽  
Phase Locked Loop ◽  
Cmos Technology ◽  
Reference Frequency ◽  
Monitor Unit ◽  
Loop Filter ◽  
Loop Bandwidth ◽  
Simulation Results ◽  
Adaptive Bandwidth ◽  
Low Phase Noise

A low power, low phase noise adaptive bandwidth phase locked loop is presented in this paper. The proposed structure benefits from a novel lock status monitor unit (LSMU) that determines loop operation and loop bandwidth. The loop filter resistance and charge pump current are inversely proportional and bandwidth to reference frequency is maintained fixed. This structure is simulated in 0.18 μm CMOS technology and simulation results are presented.

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

scholarly journals Design of area-efficient GHz range current mode frequency synthesizer using standard CMOS technology

2019 ◽  
Vol 70 (4) ◽  
pp. 323-328
Author(s):  
Dan-Dan Zheng ◽  
Yu-Bin Li ◽  
Chang-Qi Wang ◽  
Kai Huang ◽  
Xiao-Peng Yu
Keyword(s):  
Frequency Synthesizer ◽  
Frequency Tuning ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Mode Frequency ◽  
Loop Filter ◽  
Silicon Area ◽  
Power Efficient ◽  
A Current

Abstract In this paper, an area and power efficient current mode frequency synthesizer for system-on-chip (SoC) is proposed. A current-mode transformer loop filter suitable for low supply voltage is implemented to remove the need of a large capacitor in the loop filter, and a current controlled oscillator with additional voltage based frequency tuning mechanism is designed with an active inductor. The proposed design is further integrated with a fully programmable frequency divider to maintain a good balance among output frequency operating range, power consumption as well as silicon area. A test chip is implemented in a standard 0.13 µm CMOS technology, measurement result demonstrates that the proposed design has a working range from 916 MHz to 1.1 l GHz and occupies a silicon area of 0.25 mm2 while consuming 8.4 mW from a 1.2 V supply.

A 2.3 mW Multi-Frequency Clock Generator with −137 dBc/Hz Phase Noise VCO in 180 nm Digital CMOS Technology

2019 ◽  
Vol 29 (08) ◽  
pp. 2050130 ◽  
Author(s):  
Jagdeep Kaur Sahani ◽  
Anil Singh ◽  
Alpana Agarwal
Keyword(s):  
Phase Noise ◽  
Supply Voltage ◽  
Dead Zone ◽  
Dynamic Logic ◽  
Cmos Technology ◽  
Control Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Cmos Inverter ◽  
Digital Cmos

A fast phase frequency detector (PFD) and low gain low phase noise voltage-controlled oscillator (VCO)-based phase-locked loop (PLL) design are presented in this paper. PLL works in the frequency range of 0.025–1.6[Formula: see text]GHz, targeting various SoC applications. The proposed PFD, designed using CMOS dynamic logic, is fast and improves the locking time, dead zone and blind zone in the PLL. The standard CMOS inverter gate-based pseudo differential VCO is used in the PLL. Also, CMOS inverter is used as variable capacitor to tune the frequency of VCO with control voltage. The proposed PLL is designed in a 180[Formula: see text]nm CMOS process with supply voltage of 1.8[Formula: see text]V. The phase noise of VCO is [Formula: see text][Formula: see text]dBc/Hz at an offset frequency of 100[Formula: see text]MHz. The reference clock of 25[Formula: see text]MHz synthesizes the output clock of 1.6[Formula: see text]GHz with rms jitter of 0.642[Formula: see text]ps.

Analysis and Design of High Performance Phase Frequency Detector, Charge Pump and Loop Filter Circuits for Phase Locked Loop in Wireless Applications

2016 ◽  
Vol 4 (2) ◽  
pp. 397
Author(s):  
P.N. Metange ◽  
K. B. Khanchandani
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Loop Filter ◽  
Phase Frequency Detector ◽  
Analysis And Design ◽  
Wireless Applications ◽  
5 Ghz ◽  
Frequency Detector

<p>This paper presents the analysis and design of high performance phase frequency detector, charge pump and loop filter circuits for phase locked loop in wireless applications. The proposed phase frequency detector (PFD) consumes only 8 µW and utilises small area. Also, at 1.8V voltage supply the maximum operation frequency of the conventional PFD is 500 MHz whereas proposed PFD is 5 GHz. Hence, highly suitable for low power, high speed and low jitter applications.  The differential charge pump uses switches using NMOS and the inverter delays for up and down signals do not generate any offset due to its fully symmetric operation. This configuration doubles the range of output voltage compliance compared to single ended charge pump. Differential stage is less sensitive to the leakage current since leakage current behaves as common mode offset with the dual output stages. All the circuits are implemented using cadence 0.18 μm CMOS Process.</p>

scholarly journals DIGITAL CONTROLLED OSCILLATOR (DCO) FOR ALL DIGITAL PHASE-LOCKED LOOP (ADPLL) – A REVIEW

2019 ◽  
Vol 82 (1) ◽  
Author(s):  
Florence Choong ◽  
Mamun Ibne Reaz ◽  
Mohamad Ibrahim Kamaruzzaman ◽  
Md. Torikul Islam Badal ◽  
Araf Farayez ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Locked Loop ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Process Technology ◽  
Chip Area ◽  
Digital Phase ◽  
Low Power Dissipation

Digital controlled oscillator (DCO) is becoming an attractive replacement over the voltage control oscillator (VCO) with the advances of digital intensive research on all-digital phase locked-loop (ADPLL) in complementary metal-oxide semiconductor (CMOS) process technology. This paper presents a review of various CMOS DCO schemes implemented in ADPLL and relationship between the DCO parameters with ADPLL performance. The DCO architecture evaluated through its power consumption, speed, chip area, frequency range, supply voltage, portability and resolution. It can be concluded that even though there are various schemes of DCO that have been implemented for ADPLL, the selection of the DCO is frequently based on the ADPLL applications and the complexity of the scheme. The demand for the low power dissipation and high resolution DCO in CMOS technology shall remain a challenging and active area of research for years to come. Thus, this review shall work as a guideline for the researchers who wish to work on all digital PLL.

A LOW POWER CRYOGENIC CMOS ROIC DESIGN FOR 512 × 512 IRFPA

2013 ◽  
Vol 22 (10) ◽  
pp. 1340033 ◽  
Author(s):  
HONGLIANG ZHAO ◽  
YIQIANG ZHAO ◽  
YIWEI SONG ◽  
JUN LIAO ◽  
JUNFENG GENG
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Integrated Circuit ◽  
High Performance ◽  
Supply Voltage ◽  
Cmos Technology ◽  
High Gain ◽  
Readout Integrated Circuit ◽  
Chip Area ◽  
Operating Modes

A low power readout integrated circuit (ROIC) for 512 × 512 cooled infrared focal plane array (IRFPA) is presented. A capacitive trans-impedance amplifier (CTIA) with high gain cascode amplifier and inherent correlated double sampling (CDS) configuration is employed to achieve a high performance readout interface for the IRFPA with a pixel size of 30 × 30 μm2. By optimizing column readout timing and using two operating modes in column amplifiers, the power consumption is significantly reduced. The readout chip is implemented in a standard 0.35 μm 2P4M CMOS technology. The measurement results show the proposed ROIC achieves a readout rate of 10 MHz with 70 mW power consumption under 3.3 V supply voltage from 77 K to 150 K operating temperature. And it occupies a chip area of 18.4 × 17.5 mm2.

scholarly journals A Ku-Band Fractional-N Frequency Synthesizer with Adaptive Loop Bandwidth Control

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 109
Author(s):  
Youming Zhang ◽  
Xusheng Tang ◽  
Zhennan Wei ◽  
Kaiye Bao ◽  
Nan Jiang
Keyword(s):  
Phase Noise ◽  
Frequency Synthesizer ◽  
Frequency Tuning ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Loop Filter ◽  
Chip Area ◽  
Loop Bandwidth ◽  
Bandwidth Control ◽  
Ku Band

This paper presents a Ku-band fractional-N frequency synthesizer with adaptive loop bandwidth control (ALBC) to speed up the lock settling process and meanwhile ensure better phase noise and spur performance. The theoretical analysis and circuits implementation are discussed in detail. Other key modules of the frequency synthesizer such as broadband voltage-controlled oscillator (VCO) with auto frequency calibration (AFC) and programable frequency divider/charge pump/loop filter are designed for integrity and flexible configuration. The proposed frequency synthesizer is fabricated in 0.13 μm CMOS technology occupying 1.14 × 1.18 mm2 area including ESD/IOs and pads, and the area of the ALBC is only 55 × 76 μm2. The out frequency can cover from 11.37 GHz to 14.8 GHz with a frequency tuning range (FTR) of 26.2%. The phase noise is −112.5 dBc/Hz @ 1 MHz and −122.4 dBc/Hz @ 3 MHz at 13 GHz carrier frequency. Thanks to the proposed ALBC, the lock-time can be shortened by about 30% from about 36 μs to 24 μs. The chip area and power consumption of the proposed ALBC technology are slight, but the beneficial effect is significant.

scholarly journals A design of low voltage OPAMP using split-length transistors

2014 ◽  
Vol 17 (1) ◽  
pp. 62-70
Author(s):  
Khanh Trung Le ◽  
Tu Trong Bui ◽  
Hung Duc Le ◽  
Kha Cong Pham
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Feedback Systems ◽  
Advanced Technique ◽  
Low Voltage Operation ◽  
Feedback Compensation ◽  
Indirect Feedback ◽  
Low Supply Voltage

In the paper, we present a design of a low voltage Operation Amplifier (OPAMP) circuit using split-length transistors. Indirect feedback compensation is an advanced technique used to stabilize the operation of an OPAMP. Cascode transistors are usually implemented for indirect feedback systems. However, these transistors are not suitable for low voltage design. In this study, we have taken advantage of split-length transistors and indirect feedback compensation technique to design a high performance OPAMP. As a result, the OPAMP operates not only at low supply voltage but also at high frequency. The OPAMP has been designed and fabricated in a 0.18um CMOS technology. This OPAMP achieves 100 dB gain, 90 MHz unity gain frequency and 60 degrees phase margin at 2 V supply voltage.

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