scholarly journals Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
C. H. Yu ◽  
X. Y. Chen ◽  
X. D. Luo ◽  
W. W. Xu ◽  
P. S. Liu
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Gate Oxide ◽  
Channel Length ◽  
Next Generation ◽  
Short Channel ◽  
Channel Effects ◽  
Operating Limits ◽  
Low Dimensional ◽  
Interface Passivation

The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and highkgate oxide HfO2layer have been investigated in detail. The influences of Si IPL thickness, gate oxide HfO2thickness, the doping depth, and concentration of source and drain layer on output and transfer characteristics of the MOSFET at fixed gate or drain voltages have been individually simulated and analyzed. The determination of the above parameters is suggested based on their effect on maximum drain current, leakage current, saturated voltage, and so forth. It is found that the channel length decreases with the increase of the maximum drain current and leakage current simultaneously. Short channel effects start to appear when the channel length is less than 0.9 μm and experience sudden sharp increases which make device performance degrade and reach their operating limits when the channel length is further lessened down to 0.5 μm. The results demonstrate the usefulness of short channel simulations for designs and optimization of next-generation electrical and photonic devices.

scholarly journals The Effect of Doping on Different FET Structures: MOSFET, TFET and FinFET

2020 ◽  
Vol 9 (6) ◽  
pp. 972-979
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Short Channel Effects ◽  
Poor Control ◽  
Short Channel ◽  
Circuit Performance ◽  
The Past ◽  
Channel Effects ◽  
Circuit Density ◽  
Effect Of Doping

MOSFET have been scaled down over the past few years in order to give rise to high circuit density and increase the speed of circuit. But scaling of MOSFET leads to issues such as poor control gate over the current which depends on gate voltage. Many short channel effects (SCE) influence the circuit performance and leads to the indeterminist response of drain current. These effects can be decreased by gate excitation or by using multiple gates and by offering better control gate the device parameters. In Single gate MOSFET, gate electric field decreases but multigate MOSFET or FinFET provides better control over drain current. In this paper, different FET structures such as MOSFET, TFET and FINFET are designed at 22nm channel length and effect of doping had been evaluated and studied. To evaluate the performance donor concentration is kept constant and acceptor concentration is varied.

scholarly journals Design and Characterization of the Next Generation Nanowire Amplifiers

VLSI Design ◽  
2008 ◽  
Vol 2008 ◽  
pp. 1-5
Author(s):  
Sotoudeh Hamedi-Hagh ◽  
Ahmet Bindal
Keyword(s):  
High Speed ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Next Generation ◽  
Short Channel ◽  
Surrounding Gate ◽  
Channel Effects ◽  
Gate Control ◽  
Voltage Swing

Vertical nanowire surrounding gate field effect transistors (SGFETs) provide full gate control over the channel to eliminate short-channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10 nm channel length and a 2 nm channel radius. The amplifier dissipates 5 μW power and provides 5 THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5 V, and a distortion better than 3% from a 1.8 V power supply and a 20 aF capacitive load. The 2nd- and 3rd-order harmonic distortions of the amplifier are −40 dBm and −52 dBm, respectively, and the 3rd-order intermodulation is −24 dBm for a two-tone input signal with 10 mV amplitude and 10 GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high-speed analog and VLSI technologies.

scholarly journals Threshold voltage roll-off for sub-10 nm asymmetric double gate MOSFET

2019 ◽  
Vol 9 (1) ◽  
pp. 163
Author(s):  
Hakkee Jung
Keyword(s):  
Threshold Voltage ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Channel Length ◽  
Double Gate ◽  
Short Channel ◽  
Double Gate Mosfet ◽  
Channel Effects ◽  
Channel Thickness

Threshold voltage roll-off is analyzed for sub-10 nm asymmetric double gate (DG) MOSFET. Even asymmetric DGMOSFET will increase threshold voltage roll-off in sub-10 nm channel length because of short channel effects due to the increase of tunneling current, and this is an obstacle against the miniaturization of asymmetric DGMOSFET. Since asymmetric DGMOSFET can be produced differently in top and bottom oxide thickness, top and bottom oxide thicknesses will affect the threshold voltage roll-off. To analyze this, <em>thermal</em><em> </em>emission current and tunneling current have been calculated, and threshold voltage roll-off by the reduction of channel length has been analyzed by using channel thickness and top/bottom oxide thickness as parameters. As a result, it is found that, in short channel asymmetric double gate MOSFET, threshold voltage roll-off is changed greatly according to top/bottom gate oxide thickness, and that threshold voltage roll-off is more influenced by silicon thickness. In addition, it is found that top and bottom oxide thickness have a relation of inverse proportion mutually for maintaining identical threshold voltage. Therefore, it is possible to reduce the leakage current of the top gate related with threshold voltage by increasing the thickness of the top gate oxide while maintaining the same threshold voltage.

scholarly journals Revisiting Analytical Models of N-Type Symmetric Double-Gate MOSFETs Shaded Conditions

2020 ◽  
Vol 24 (1) ◽  
Author(s):  
Rekib Uddin Ahmed ◽  
Prabir Saha
Keyword(s):  
Integrated Circuits ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Cmos Technology ◽  
Channel Length ◽  
Oxide Semiconductor ◽  
Analytical Models ◽  
Double Gate ◽  
Short Channel ◽  
Channel Effects

Nowadays, the endlessly increasing demand for faster and complex integrated circuits (IC) has been fuelled by the scaling of metal-oxide-semiconductor field-effect-transistors (MOSFET) to smaller dimensions. The continued scaling of MOSFETs approaches its physical limits due to short-channel effects (SCE). Double-gate (DG) MOSFET is one of the promising alternatives as it offers better immunity towards SCEs and can be scaled to the shortest channel length. In future, ICs can be designed using DG-CMOS technology for which mathematical models depicting the electrical characteristics of the DG MOSFETs are foremost needed. In this paper, a review on n-type symmetric DG MOSFETs models has been presented based on the analyses of electrostatic potential distribution, threshold voltage, and drain-current models. Mathematical derivations of the device models are described elaborately, and numerical simulations are also carried out to validate the replicability of models.

Modelling and Simulation of Hetero-Dielectric Surrounding Gate TFET

2020 ◽  
Vol 62 ◽  
pp. 47-58
Author(s):  
I. Vivek Anand ◽  
T.S. Arun Samuel ◽  
Palanichamy Vimala ◽  
A. Shenbagavalli
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Approximation Technique ◽  
Device Structure ◽  
Short Channel ◽  
Lateral Direction ◽  
Tunnel Fet ◽  
Surrounding Gate ◽  
Channel Effects ◽  
20 Nm

Analytical modelling for a tri material cylindrical gate tunnel FET is developed in this paper. Poisson equation and parabolic approximation technique are employed to develop the analytical model of the proposed device. Inorder to eliminate the influence of short channel effects and the leakage current, a surrounding gate with three different work function materials is used. Stacked dielectric or hetero-dielectric is used to improve the ON current of device. Performance of the device has been analyzed with different gate material lengths such as 10 nm, 15 nm and 20 nm. The developed 2-D mathematical model is used to obtain results like drain current, surface potential and electrical field in the vertical and lateral direction. From the results, a reduction in the device limitations is inferred and the leakage current is also considerably reduced. It has been found from the presented results that the proposed device structure Tri Material Cylindrical Gate Tunnel FET (TM CG TFET) provides the improved ON state current (10-3A/µm) and reduced OFF state current (10-14A/µm). The accuracy of the results and characteristics of the device are evaluated using TCAD simulations.

Projected Performance of Sub-10 nm GaN-based Double Gate MOSFETs

2017 ◽  
Vol 2 (2) ◽  
pp. 15-19 ◽  
Author(s):  
Md. Saud Al Faisal ◽  
Md. Rokib Hasan ◽  
Marwan Hossain ◽  
Mohammad Saiful Islam
Keyword(s):  
High Speed ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Channel Length ◽  
Capacitive Coupling ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel ◽  
Channel Effects ◽  
Silvaco Atlas

GaN-based double gate metal-oxide semiconductor field-effect transistors (DG-MOSFETs) in sub-10 nm regime have been designed for the next generation logic applications. To rigorously evaluate the device performance, non-equilibrium Green’s function formalism are performed using SILVACO ATLAS. The device is turn on at gate voltage, VGS =1 V while it is going to off at VGS = 0 V. The ON-state and OFF-state drain currents are found as 12 mA/μm and ~10-8 A/μm, respectively at the drain voltage, VDS = 0.75 V. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are ~69 mV/decade and ~43 mV/V, which are very compatible with the CMOS technology. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate. The SS and DIBL are decreased with increasing the underlap length (LUN). Though the source to drain resistance is increased for enhancing the channel length, the underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN-based DG-MOSFETs as one of the excellent promising candidates to substitute currently used MOSFETs for future high speed applications.

scholarly journals 3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

2018 ◽  
Vol 12 (3) ◽  
pp. 1358
Author(s):  
Ameer F. Roslan ◽  
F. Salehuddin ◽  
A.S. M.Zain ◽  
K.E. Kaharudin ◽  
H. Hazura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characterization ◽  
Channel Length ◽  
Double Gate ◽  
Short Channel ◽  
3D Design ◽  
Drive Current ◽  
Minimum Requirement ◽  
Technology Roadmap ◽  
Low Performance

<p>This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HFIN) and the fin thickness (TFIN). Virtual fabrication process of 3-dimensional (3D) design is applied throughout the study and its electrical characterization is employed and substantial is shown towards the FinFET design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio) at 563138.35 compared to prediction made by the International Technology Roadmap Semiconductor (ITRS) 2013. Conclusively, the incremental in ratio has fulfilled the desired in incremental on the drive current as well as reductions of the leakage current. Threshold voltage (VTH) meanwhile has also achieved the nominal requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.676±12.7% V. The ION , IOFF and VTH obtained from the device has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology.</p>

scholarly journals Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

2017 ◽  
Vol 7 (4) ◽  
pp. 1899
Author(s):  
Mohammed Khaouani ◽  
Ahlam Guen-Bouazza
Keyword(s):  
Single Channel ◽  
Numerical Study ◽  
Drain Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel One ◽  
A Value ◽  
Device Structures ◽  
Channel Effects ◽  
The Impact

<p>Square gate all around MOSFETs are a very promising device structures allowing to continue scaling due to their superior control over the short channel effects. In this work a numerical study of a square structure with single channel is compared to a structure with 4 channels in order to highlight the impact of channels number<em> </em>on the device’s DC parameters (drain current and threshold voltage). Our single channel rectangular GAA MOSFET showed reasonable ratio Ion/Ioff of 10<sup>4</sup>, while our four channels GAA MOSFET showed a value of 10<sup>3</sup>. In addition, a low value of drain induced barrier lowering<em> (DIBL) of </em>60mV/V was obtained for our single channel GAA and a lower value of with 40mv/v has been obtained for our four channel one. Also, an extrinsic transconductance of 88ms/µm have been obtained for our four channels GAA compared to the single channel that is equal to 7ms/µm.</p>

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