scholarly journals Properties of multicomponent (Mn-Ni-Co-Al-Si-Ti) oxide spinel hierarchically organized nanostructures deposited by magnetron sputtering in two temperatures.

2021 ◽  
Vol 22 (3) ◽  
pp. 494-500
Author(s):  
P. Sagan ◽  
M. Frugynskyi ◽  
R. Mroczka ◽  
G. Wisz
Keyword(s):  
Magnetron Sputtering ◽  
Spinel Structure ◽  
Spinel Phase ◽  
Sample Surface ◽  
Si Substrates ◽  
Xrd Diffraction ◽  
Different Temperatures ◽  
Oxide Spinel ◽  
Two Temperatures ◽  
Substrate Temperatures

Multicomponent spinel films were deposited on Ag/Si substrates by magnetron sputtering. Two substrate temperatures were used. XRD diffraction measurements show that the layers are composed of three metals oxides (Mn2O3, NiO, CoO). The presence of spinel phase is poorly visible. However, electron diffraction measurements (RHEED) clearly confirmed the presence of nanostructured spinel structure on top of the samples. Moreover, AFM measurements show that nanostructured spinel islands are present on the sample surface. The measurements validated that indeed, hierarchically organized spinel-oxides nanostructures were obtained. A possible model growth of the spinel nanostructures at different temperatures is discussed.

Exchange Spring Type Magnet Realized in FePt/Fe Multilayers Deposited by Magnetron Sputtering

2005 ◽  
Vol 872 ◽  
Author(s):  
Yousong Gu ◽  
Dayong Zhang ◽  
Xiaoyuan Zhan ◽  
Zhen Ji ◽  
Xiaolan Zhen ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Lattice Constants ◽  
Si Substrates ◽  
Energy Product ◽  
Layer Deposition ◽  
Different Temperatures ◽  
Spring Type ◽  
Type Magnet

AbstractSeries of FePt/Fe multilayers with different layer thicknesses have been deposited on Si substrates by magnetron sputtering and post annealing at different temperatures and durations. The structure, surface morphology, composition, and magnetic properties of the deposited films have been characterized by XRD, SEM, EDX and VSM. It is found that after annealing at temperatures above 500°C, FePt phase undergoes a phase transition from disorder fcc into ordered fct structure, and become a hard magnetic phase. For [FePt/Fe]n multilayer with varying Fe layer thickness, lattice constants and grain sizes change with Fe layer thickness and annealing temperature. The coercivities of [FePt/Fe]n multilayers decrease with Fe layer deposition time, and the energy product (BH)max shows a maximum with Fe layer thickness. Optimization on layer thickness leads a high (BxH)max value of 15.2MGOe for [FePt(8min)/Fe(4min)]8. The effects of quick annealing and Ag underlayer on the structure and magnetic properties were also studied.

Low Temperature Deposition of Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films on Pt Electrodes by RF Magnetron Sputtering

2003 ◽  
Vol 784 ◽  
Author(s):  
N. Cramer ◽  
Elliot Philofsky ◽  
Lee Kammerdiner ◽  
T. S. Kalkur
Keyword(s):  
Dielectric Constant ◽  
Magnetron Sputtering ◽  
Relative Dielectric Constant ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Ic Manufacturing ◽  
Pt Electrodes ◽  
Temperature Deposition ◽  
Current Densities ◽  
Substrate Temperatures

ABSTRACTBa0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) films acceptor-doped with 0.8 at. % Sc were deposited on Pt/TiO2/SiO2/Si substrates using rf magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450°C, which allows this process to be compatible with many materials commonly used in IC manufacturing. In addition, this process made no use of oxygen in the sputter gas or in annealing atmospheres and thus it remains compatible with easily oxidized materials. A relative dielectric constant of 166 was achieved along with a loss tangent of 0.006 to 0.17 at 10 kHz. The tunability of the dielectric constant was greater than 50 %. Leakage current densities of 1.6×10-8 A/cm2 were observed at 300K with 300 kV/cm of applied electric field. In comparison, Ba1-xSrxTiO3 (BST) films prepared under similar conditions show much greater leakage.

scholarly journals Effect of the annealing temperature on the structural properties of hafnium nanofilms by magnetron sputtering

2021 ◽  
Vol 2064 (1) ◽  
pp. 012071
Author(s):  
Thant Sin Win ◽  
A P Kuzmenko ◽  
V V Rodionov ◽  
Min Myo Than
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Hafnium Dioxide ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Lattice Strains ◽  
Atomic Force ◽  
Different Temperatures

Abstract In this work investigated the effect of the annealing temperature on hafnium nanofilms obtained by DC magnetron sputtering on Si substrates. The nanofilms annealed through 100°C to 700°C by a High-Temperature Strip Heater Chambers (HTK-16N) on an X-ray Diffractometer (XRD). The microstructure and morphology of the films at different temperatures were investigated by XRD, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Raman Microspectrometer (RS). It was found that annealing affects changes in the lattice strains, texture, grain size, and roughness of Hf nanofilms. According to XRD data, the structure of the thin films showed amorphous from room temperature to 100°C and starting from a temperature of 200°C were changed crystallization. At 500°C a monoclinic structure corresponding to hafnium dioxide HfO2was formed in hafnium nanofilms.

A New Ion Beam Deposition Technique for Low Temperature Silicon Epitaxy

1995 ◽  
Vol 388 ◽  
Author(s):  
S. Mohajerzadeh ◽  
C.R. Selvakumar ◽  
D.E. Brodie ◽  
M.D. Robertson ◽  
J.M. Corbett
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Island Growth ◽  
Si Substrates ◽  
Silicon Epitaxy ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Si Films ◽  
Substrate Temperatures

AbstractWe report the results of an investigation to grow thin Si films on Si substrates at low substrate temperatures using ionized SiH4 gas generated with a Kaufman type ion gun. This investigation shows island-growth at higher substrate temperatures (500-700°C) in the form of square-based pyramids. by lowering the substrate temperature to 300°C, we were able to achieve a planar growth. the growth rate can be enhanced by introducing elemental Si from a thermal evaporation source. Scanning electron microscopy, transmission electron microscopy and electron diffraction analysis were used to study the crystalline quality of the samples prepared at different temperatures.

scholarly journals Assessment of Coating Quality Obtained on Flame-Retardant Fabrics by a Magnetron Sputtering Method

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1348
Author(s):  
Pamela Miśkiewicz ◽  
Magdalena Tokarska ◽  
Iwona Frydrych ◽  
Marcin Makówka
Keyword(s):  
Magnetron Sputtering ◽  
Flame Retardant ◽  
Imaging System ◽  
Sample Surface ◽  
Radiant Heat ◽  
Cotton Fabrics ◽  
Point Of View ◽  
Thermal Parameters ◽  
Coating Quality ◽  
Contact Heat

Innovative textile materials can be obtained by depositing different coatings. To improve the thermal properties of textiles, aluminum and zirconium (IV) oxides were deposited on the Nomex® fabric, basalt fabric, and cotton fabric with flame-retardant finishing using the magnetron sputtering method. An assessment of coating quality was conducted. Evenly coated fabric ensures that there are no places on the sample surface where the values of thermal parameters such as resistance to contact heat and radiant heat deviate significantly from the specified ones. Energy-dispersive spectroscopy was used for the analysis of modified fabric surfaces. Non-contact digital color imaging system DigiEye was also used. The criterion allowing one to compare surfaces and find which surface is more evenly coated was proposed. The best fabrics from the point of view of coating quality were basalt and cotton fabrics coated with aluminum as well as basalt fabric coated with zirconia. The probability of occurrence of places on the indicated sample surfaces where the values of thermal parameters (i.e., resistance to contact heat and radiant heat) deviated significantly from the specified ones was smaller for Nomex® and cotton fabrics coated with zirconia and Nomex® fabric coated with aluminum.

Preparation and Characterization of NTC NiMn2O4-La1-xCaxMnO3 (0≤x≤0.3) Composite Ceramics

2013 ◽  
Vol 716 ◽  
pp. 78-83 ◽  
Author(s):  
Hui Min Zhang ◽  
Fang Guan ◽  
Ai Min Chang ◽  
Li Jun Zhao
Keyword(s):  
Electrical Resistivity ◽  
Perovskite Structure ◽  
Spinel Structure ◽  
Thermal Constant ◽  
Inrush Current ◽  
Composite Ceramics ◽  
Sem Images ◽  
Conventional Solid State Reaction ◽  
Different Temperatures ◽  
Xrd Patterns

Composite ceramics made of spinel structure NiMn2O4 and CaO-doped perovskite structure LaMnO3 were prepared by a conventional solid state reaction and sintered at different temperatures. The XRD patterns have shown that the major phases presented in the sintered samples are NiMn2O4 compounds with the spinel structure, La1-xCaxMnO3 with the perovskite structure and NiO with a monoclinic structure. SEM images show that the density and grain size of the composite ceramics increases with sintered temperature increasing. The electrical resistivity of the composite ceramics at 25°C is found to change significantly depending on the CaO content, while the thermal constant B is still reasonably large in the range of 2400 to 3000 K. For the composition x = 0.1, the composite with a low electrical resistivity (ρ25°C=4.46Ω·cm) and moderate B value (B25/50=2762K) was obtained. These composites could be applied as potential candidates for NTC thermistors in the suppression of the inrush current.

Characteristics of ZnO thin films deposited onto Al/Si substrates by r.f. magnetron sputtering

1997 ◽  
Vol 302 (1-2) ◽  
pp. 116-121 ◽  
Author(s):  
Ki Hyun Yoon ◽  
Ji-Won Choi ◽  
Dong-Heon Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Si Substrates

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

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