Enhancement of Long-Wavelength Photoluminescence Due to Heat-Treatment in Si-Doped GaAs
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ABSTRACTHighly officient radiative recombination even at room temperature was found at a wavelength of about 1.3 μm in heat-treated Si-doped GaAs. The range of Si concentrations and the condition of heat-treatment to yield this intense luminescence were determined. Excitation spectra of the PL lines suggest that such PL lines are related to pairs of Si-donor and Si- acceptor and such pairs combined with gallium vacancies.
2018 ◽
Vol 44
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pp. 11
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1981 ◽
Vol 39
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pp. 72-73
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2015 ◽
Vol 639
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pp. 361-368
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2014 ◽
Vol 783-786
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pp. 180-185
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