The Stability of Reactively Sputtered WNx Thin Films on III-V Semiconductors

1994 ◽  
Vol 337 ◽  
Author(s):  
Zhengda Pang ◽  
Mohamed Boumerzoug ◽  
Peter Mascher ◽  
John G. Simmons
Keyword(s):  
Thin Films ◽  
Processing Parameters ◽  
Auger Spectroscopy ◽  
Gas Flows ◽  
Rf Power ◽  
Electrical Measurements ◽  
Deposition Parameters ◽  
The Stability ◽  
Deposited Films ◽  
Thermal Stability Of

ABSTRACTWNX thin films were deposited at room temperature on (100) n-type GaAs substrates by rf reactive sputtering of a high purity W target in Ar/N2 gas mixtures. Deposition parameters such as the rf power, the ratio of gas flows, and the total pressure can be optimized for the preparation of uniform and low resistivity WNX thin films. The W:N ratio in the as-deposited WNX films was determined using Auger spectroscopy and the morphology was examined by scanning electron microscopy (SEM).The WNx/GaAs samples were subjected to rapid thermal annealing in an N2 atmosphere at temperatures between 400°C and 800°C. The thermal stability of these structures was examined using electrical measurements and Auger profiling . The results are correlated with the properties of as-deposited films and the influence of various processing parameters will be discussed.

Fabrication of Amorphous Carbon Thin Film from CH4 Using PEVCD

2019 ◽  
Vol 966 ◽  
pp. 95-99
Author(s):  
Budhi Priyanto ◽  
Muh Saleh ◽  
Sarayut Tunmee ◽  
Chanan Euaruksakul ◽  
Yoyok Cahyono ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Carbon ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Gas Flows ◽  
Rf Power ◽  
Methane Gas ◽  
Deposition Parameters ◽  
Frequency Plasma

Thin films of amorphous carbon have successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD). Carbon film fabrication with a methane gas (CH4) source has been fabricated with deposition parameters: 15 Watt of RF power, 13.5 MHz of frequency, 100 °C of substrate temperature, 450 m Torr of pressure and 120 minutes of deposition time. Methane gas flows were 40, 60, 80 sccm, respectively. Thin film can be in the form of DLC, Graphite or Amorphous Carbon depending on the ratio of hybridized orbitals of sp3, sp2 and sp. The X-ray diffractrometry (XRD) show the amorphous phase of the thin film has been formed. Further analysis using Fourier transform infrared (FTIR) combined with synchrotron photoemission spectroscopy (PES) showed that the sp3 hybridization was more dominant than sp2. This gives an indication that as fabricated thin films are tetrahedrally amorphous carbon (ta-C). Keywords: Amorphous carbon, methane gas, thin film.

Thermal Stability of Reactively Sputtered TiN on InP as a Diffusion Barrier

1992 ◽  
Vol 260 ◽  
Author(s):  
Zhengda Pang ◽  
Mohamed Boumerzoug ◽  
Roman V. Kruzelecky ◽  
Peter Mascher ◽  
John G. Simmons
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Measurements ◽  
Tin Films ◽  
Fine Grained ◽  
The Stability ◽  
Large Sheet ◽  
Deposited Films ◽  
Thermal Stability Of

ABSTRACTThe stability of rcactively sputtered TiN films on InP for application as a diffusion barrier has been examined using electrical measurements, Auger profiling and scanning electron microscopy (SEM). The samples were subjected to rapid-thermal-annealing (RTA) in a N2 atmosphere at temperatures between 400°C and 900°C. The SEM pictures of “as deposited” and RTA stoichiometric films show that the morphology is smooth, fine-grained and stable until 800°C. Auger depth profiling shows little interdiffusion between TiN and InP for RTA below 800°C. Annealing at temperatures of about 700°C reduces the sheet resistance of TiN relative to the “as-deposited” films by about 50%. Annealing at temperatures above 800°C results in a large sheet resistance. This may be associated with the deterioration of the TiN/InP morphology at high anneal temperatures as observed by SEM.

Al Doped Ta2O5 Thin Films for Microelectronic Applications

2000 ◽  
Vol 654 ◽  
Author(s):  
P. C Joshi ◽  
M. W. Cole ◽  
C. W. Hubbard ◽  
E. Ngo
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Electrical Measurements ◽  
Cross Sectional ◽  
Solution Deposition ◽  
Atomic Force ◽  
The Stability ◽  
Insulating Properties ◽  
Post Deposition

AbstractIn this paper, we report on the fabrication and characterization of pure and Al doped Ta2O5 thin films fabricated by metalorganic solution deposition (MOSD) technique. The pure and Aldoped Ta2O5 thin films were fabricated by spin-coating technique using room temperature processed carboxylate-alkoxide precursor solution. The structure of the films was analyzed by xray diffraction (XRD). The surface and cross-sectional morphology of the films were examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on films in MIM configuration using Pt as the top and bottom electrode. The effects of Al concentration and the post-deposition annealing temperature on the structural, dielectric, and insulating properties were analyzed. The effects of the applied bias and the measurement temperature on the dielectric and insulating properties were also analyzed to establish the stability and reliability of Al doped Ta2O5 thin films.

Effect of a Third Element on the Stability of NiSi Thin Films on Si

2006 ◽  
Vol 249 ◽  
pp. 127-134 ◽  
Author(s):  
Dominique Mangelinck
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Phase Diagrams ◽  
High Temperatures ◽  
Driving Force ◽  
Ternary Phase ◽  
The Third ◽  
Ternary Phase Diagrams ◽  
The Stability ◽  
Thermal Stability Of

The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900oC leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this element can also be explained with the ternary phase diagrams.

Effects of Deposition Parameters and Annealing Temperatures on the Characteristics of the Sr0.6Ba0.4Nb2O6 Thin Films

2011 ◽  
Vol 415-417 ◽  
pp. 1867-1870 ◽  
Author(s):  
Chao Chin Chan ◽  
Yuan Tai Hsieh ◽  
Cheng Yi Chen ◽  
Wen Cheng Tzou ◽  
Chia Ching Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Concentration ◽  
Rf Sputtering ◽  
Chamber Pressure ◽  
Rf Power ◽  
Electrical Field ◽  
Si Substrates ◽  
Deposition Parameters ◽  
Capacitance Voltage ◽  
Rapid Temperature

Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio frequency (RF) sputtering onto the SiO2/Si/Al and Pt/Ti/Si substrates to form the MFIS and MFM structures. Their deposition rates increased with decreasing oxygen concentration and with increasing RF power. Their optimal deposition parameters were the substrate temperature of 500°C, chamber pressure of 10 mTorr, oxygen concentration of 40%, and RF power of 120W, respectively. The rapid temperature annealing (RTA) process had large effects on the grain growth of the SBN thin films. The effects of different RTA temperatures on the leakage current density - electrical field curves and the capacitance - voltage curves of the SBN thin films were also investigated.

scholarly journals RF plasma polymerised thin films from natural resources

2014 ◽  
Vol 32 ◽  
pp. 1460319 ◽  
Author(s):  
Mohan V. Jacob ◽  
Chris D. Easton ◽  
Liam J. Anderson ◽  
Kateryna Bazaka
Keyword(s):  
Thin Films ◽  
Essential Oils ◽  
Biomedical Applications ◽  
Chemical Structure ◽  
Rf Plasma ◽  
Rf Power ◽  
Film Properties ◽  
Deposition Parameters ◽  
Volatile Organic ◽  
One Step

Plasma polymerisation is an effective tool for fabrication of thin films from volatile organic monomers. RF plasma assisted deposition is used for one-step, chemical-free polymerisation of nonsynthetic materials derived directly from agricultural produces. By varying the deposition parameters, especially the input RF power, the film properties can be tailored for a range of uses, including electronics or biomedical applications. The fabricated thin films are optically transparent with refractive index close to that of glass. Given the diversity of essential oils, this paper compares the chemical and physical properties of thin films fabricated from several commercially exploited essential oils and their components. It is interesting to note that some of the properties can be tailored for various applications even though the chemical structure of the derived polymer is very similar. The obtained material properties also show that the synthesised materials are suitable as encapsulating layers for biodegradable implantable metals.

Improvement of Thermal Stability of ZrB2/Si3N4 Coatings as High-Temperature Solar Selective Absorbers

2014 ◽  
Vol 521 ◽  
pp. 581-585
Author(s):  
Yao Ming Sun ◽  
Xiu Di Xiao ◽  
Guan Qi Chai ◽  
Gang Xu ◽  
Bin Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Substrate Temperature ◽  
Bias Voltage ◽  
X Ray Diffraction ◽  
Substrate Bias Voltage ◽  
X Ray ◽  
Deposition Parameters ◽  
Thermal Stability Of

ZrB2 thin films were prepared by DC magnetron sputtering technique. The microstructure, thermal stability and optical properties of thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometer. The compactness of ZrB2 thin films was studied to improve the thermal stability by optimizing the deposition parameters. The compactness and thermal stability of the coatings were improved with the increase of substrate temperature. However, these properties of the coatings were enhanced firstly and then weakened with the increase of substrate bias voltage. The selectivity of sample deposited at high substrate temperature and suitable bias voltage degraded slightly after annealing at 500 °C/100 h in air. This provided a new way to improve the thermal stability of high-temperature solar selective absorber.

An Optimization Study of Thermal Stability of W/GaAs Schottky Gates

1993 ◽  
Vol 300 ◽  
Author(s):  
Marcio Favoretio ◽  
Jacobus W. Swart
Keyword(s):  
Thermal Stability ◽  
Schottky Diodes ◽  
High Resistivity ◽  
Electrical Characteristics ◽  
Rf Power ◽  
Good Thermal Stability ◽  
Deposition Parameters ◽  
Optimization Study ◽  
Film Characteristics ◽  
Thermal Stability Of

ABSTRACTThis paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100°C.

scholarly journals Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

2021 ◽  
Vol 127 (10) ◽  
Author(s):  
Somayeh Asgary ◽  
Elnaz Vaghri ◽  
Masoumeh Daemi ◽  
Parisa Esmaili ◽  
Amir H. Ramezani ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sputtering Power ◽  
Microstructural Surface ◽  
Deposited Films

AbstractIn this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

scholarly journals Investigations of Different Phases Responsible for Changes in Optical Properties of Organic Semiconducting Device Material Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Vivek Kumar Shukla ◽  
Jaya Maitra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Organic Semiconductors ◽  
Green Light ◽  
Green Emission ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Deposition Parameters ◽  
Hydroxy Quinoline ◽  
Deposited Films

The environment sensitivity of organic semiconductors may change their molecular structure and hence optical properties. Exploiting this concept, experiments were performed on a green light emitting material bis(8-hydroxy quinoline)Zinc, (Znq2) used in organic light emitting diodes (OLEDs). Thin films were deposited at varying deposition parameters, and their properties were compared. We investigated that as deposited films have a significant component of Znq2 tetramer out of two known forms, that is, dihydrate and anhydrous tetramer (Znq2)4, the films deposited at lower deposition rates have higher anhydrous content. The degradation of thin film is shown, that changes the optical properties of film from green emission to blue which may be due to water adsorption and crystallization.

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