Gate Diffusion Input Based 10-T CNTFET Power Efficient Full Adder

2021 ◽  
Vol 14 ◽  
Author(s):  
Priyanka Tyagi ◽  
Sanjay Kumar Singh ◽  
Piyush Dua
Keyword(s):  
High Speed ◽  
Full Adder ◽  
Additional Advantage ◽  
Power Efficient ◽  
Digital World ◽  
Diffusion Technique ◽  
Low Power Dissipation ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Full Swing

Background: Full adder is the key element of the digital electronics. The CNTFET is the most promising device in modern electronics. To enhance the performance of the full adder CNTFET is used in place of the CMOS. Objective: To implement the high speed full adder circuit for advance applications of the digital world. Methods: Full adder circuit with new Gate diffusion technique has been implemented in this work. There is the comparative study of the 10-T CNTFET full adder with GDI technique and the 10-T Finfet based full adder using GDI technique. Ultralow power feature is the additional advantage of the GDI technique. This technology provides the full swing voltage to the circuit moreover it also reduces number of transistors required. This technique has been used with CNTFET to upgrade full adder in terms of the dissipated power and product of power consumed and delay introduced in the circuit. Results: The proposed design shows that the low power dissipation comes out to be approximately 4.3nW at 0.5volts. The power delay product is 4.7x10-20 J at the same voltage level. The Finfet design also shows the better performance with GDI. But GDI enhance CNTFET based design power consumption about 32% from the FinFET. Conclusions: CNTFET observed the better response due to good current conductivity as compare to the FinFET. This work has been implemented and simulated on the 32nm node technology.

Performance Analysis of Various Multipliers Using 8T-full Adder with 180nm Technology

2020 ◽  
Vol 13 (6) ◽  
pp. 864-870
Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Fundamental Operation ◽  
Wallace Tree ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Wallace Tree Multiplier

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.

scholarly journals High-Speed Hybrid-Logic Full Adder Using High-Performance 10-T XOR–XNOR Cell

2021 ◽  
pp. 263-269
Author(s):  
Tejaswini M. L ◽  
Aishwarya H ◽  
Akhila M ◽  
B. G. Manasa
Keyword(s):  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Cmos Technology ◽  
Power Performance ◽  
High Speed Design ◽  
Power Delay Product ◽  
Full Swing ◽  
Output Swing ◽  
High Output

The main aim of our work is to achieve low power, high speed design goals. The proposed hybrid adder is designed to meet the requirements of high output swing and minimum power. Performance of hybrid FA in terms of delay, power, and driving capability is largely dependent on the performance of XOR-XNOR circuit. In hybrid FAs maximum power is consumed by XOR-XNOR circuit. In this paper 10T XOR-XNOR is proposed, which provide good driving capabilities and full swing output simultaneously without using any external inverter. The performance of the proposed circuit is measured by simulating it in cadence virtuoso environment using 90-nm CMOS technology. This circuit outperforms its counterparts showing power delay product is reduced than that of available XOR-XNOR modules. Four different full adder designs are proposed utilizing 10T XOR-XNOR, sum and carry modules. The proposed FAs provide improvement in terms of PDP than that of other architectures. To evaluate the performance of proposed full adder circuit, we embedded it in a 4-bit and 8-bit cascaded full adder. Among all FAs two of the proposed FAs provide the best performance for a higher number of bits.

scholarly journals Design and Implementation of Carbon Nano-tube based Full Adder at 32nm Technology for High Speed and Power Efficient Arithmetic Applications

2022 ◽  
Vol 2161 (1) ◽  
pp. 012050
Author(s):  
Imran Ahmed Khan
Keyword(s):  
High Speed ◽  
Full Adder ◽  
Logic Circuits ◽  
Power Efficient ◽  
Cmos Transistors ◽  
Bases Of Power ◽  
Ripple Carry Adder ◽  
Supply Voltages ◽  
Power Delay Product ◽  
Carbon Nano Tube

Abstract Due to physical, material, technological, power-thermal and economical difficulties, scaling of CMOS transistors will stop very soon. Due to efficiency of power and speed compared to CMOS transistors, Carbon Nano-tube transistors are best suitable element to design logic circuits. So, CNTFETS have been utilized in designing of proposed full adder (FA) and 4-bit ripple carry adder (RCA) in this paper. Proposed FA and RCA have been compared to rival designs on bases of power, speed and power-delay-product (PDP). FA and RCA circuits have been analysed with the variation of temperature from 0°C to 100°C while the variation of supply voltages is from 0.7V to 1.3V. For all temperatures and all supply voltages, proposed FA and proposed RCA have the least power consumption, shortest delay and lowest PDP. SPICE has been utilized for simulating FAs and RCAs in 32 nm process node. Even though the fabrication is complicated than CMOS counterparts but simulation results confirm usefulness of proposed FA and RCA for high speed and power efficient arithmetic applications.

scholarly journals Low Voltage Full Swing FinFET Hybrid Full Adder

2019 ◽  
Vol 8 (2) ◽  
pp. 4253-4263
Keyword(s):  
Power Dissipation ◽  
Low Voltage ◽  
Average Power ◽  
Full Adder ◽  
Voltage Range ◽  
Lower Power ◽  
Low Power Dissipation ◽  
Power Delay Product ◽  
Full Swing ◽  
Cmos Implementation

In this research paper, CMOS and FinFET based hybrid Full Adders operating at low voltages with low power dissipation are proposed. The proposed CMOS based circuit is compared with few existing hybrid full adders in terms of average power dissipation and power-delay-product (PDP). The designed CMOS based hybrid adder achieves lower power dissipation and low PDP compared to other hybrid adders over a voltage range of 0.6V to 1V. The proposed CMOS implementation of hybrid full adder fails at 0.5V to produce full swing output. To solve this full swing problem, the proposed hybrid full adder is implemented using FinFETs which produce full output voltage, lower power and low PDP comparing with CMOS implementation. The circuits are designed with HSPICE tool in 32nm predictive technology model (PTM).

scholarly journals Design a Low Power and High Speed 130nm Fulladder using Exclusive-OR and Exclusive NOR Gates

2021 ◽  
Vol 10 (5) ◽  
pp. 81-86
Author(s):  
Soniya Nuthalapati ◽  
Ranjitha P.V.Sai ◽  
Radhika Rani Kalapala ◽  
Lourdu Sasi Rekha Lingisetty ◽  
Sirisha Mekala ◽  
...  
Keyword(s):  
Low Power ◽  
Composite Structures ◽  
High Speed ◽  
Full Adder ◽  
Power Requirement ◽  
Pass Transistor ◽  
Power Delay Product ◽  
Exclusive Or ◽  
Full Swing ◽  
Design Power

This literature illustrates the high speed and low power Full Adder (FADD) designs. This study relates to the composited structure of FADD design composed in one unit. In this the EXCL-OR/EXCL-NOR designs are used to design the FADD. Mostly concentrates on high speed standard FADD structure by combining the EXCL-OR/EXCL-NOR design in single unit. We implemented two composite structures of FADD through the full swing EXCL-OR/EXCL-NOR designs. And the EXCL-OR/EXCL-NOR design is done through pass transistor logic (PTL) and the same design projected on the composited FADD design. Such that the delay, area of the design, power requirement for the circuit gets optimized. The two composited FADD designs are compared and reduced the constraints of power requirement, area, delay and the power delay product (PDP). The simulated outcomes are verified through 130nnm CMOS mentor graphics tool.

ANALYSIS OF A NOVEL FULL ADDER DESIGNED FOR IMPLEMENTING IN CARBONE NANOTUBE TECHNOLOGY

2012 ◽  
Vol 21 (05) ◽  
pp. 1250042 ◽  
Author(s):  
MAHDIAR GHADIRY ◽  
MAHDIEH NADI ◽  
HOSEIN MOHAMMADI ◽  
ASRULNIZAM BIN ABD MANAF
Keyword(s):  
Low Power ◽  
High Speed ◽  
Full Adder ◽  
Ultra Low Power ◽  
New Approach ◽  
And Performance ◽  
Carbon Nanotube Technology ◽  
Power Delay Product ◽  
Full Swing ◽  
Very High

A novel low power-delay product full adder circuit is presented in this paper. A new approach is used in order to design full-swing full adder with low number of transistors. The proposed full adder is implemented in MOSFET-like Carbon nanotube technology and the layout is provided based on standard 32 nm technology from MOSIS. The simulation results using HSPICE show that, there are substantial improvements in both power and performance of the proposed circuit compared to latest designs. In addition, the proposed circuit has been implemented in conventional 32 nm process to estimate the advantages of using carbon-based transistors in digital designs over conventional silicon technology. The proposed circuit can be applied in ultra low power and very high speed applications.

scholarly journals 14 Transistors CNTFET and CMOS Full Adder Cell for Modified GDI Technique

2019 ◽  
Vol 8 (12) ◽  
pp. 842-845
Keyword(s):  
Carbon Nanotube ◽  
High Speed ◽  
Full Adder ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Basic Unit ◽  
Short Channel ◽  
Low Power Dissipation ◽  
The Difference ◽  
Cmos Implementation

Adder Is Basic Unit For Any Digital System, Dsp And Microprocessor. The Main Issue In Design High Speed Full Adder Cell With The Low Power Dissipation. As We Know Cmos Technology Used For Vlsi Designing Cmos Has Many Drawbacks As High Power Short Channel Effect Etc. Then Cntfet (Carbon Nanotube Field Effect Transistor) Has Been Developed Which Has Same Structure As Cmos. The Difference Between Structure Of Cmos And Cntfet Is Their Channel. In Cntfet Channel Is Replaced By Carbon Nanotube. In This Paper We Compare Full Adder Circuit Using Cntfet With Gdi Technique And Cmos Implementation Of Adder Which Gdi Technique. Gdi Technique Is Used For Speed And Power Optimization In Digital Circuit. This Can Also Reduce The Count Of Transistor Which Affects The Size Of Device.

A Low Power - High Speed CNTFETs Based Full Adder Cell With Overflow Detection

2019 ◽  
Vol 11 (1) ◽  
pp. 80-87 ◽  
Author(s):  
Jitendra Kumar Saini ◽  
Avireni Srinivasulu ◽  
Renu Kumawat
Keyword(s):  
Mass Production ◽  
High Speed ◽  
Field Effect Transistor ◽  
Full Adder ◽  
Enabling Technology ◽  
Look Ahead ◽  
Ripple Carry Adder ◽  
Effect Transistor ◽  
Cad Tool ◽  
Power Delay Product

The transformation from the development of enabling technology to mass production of consumer-centric semiconductor products has empowered the designers to consider characteristics like robustness, compactness, efficiency, and scalability of the product as implicit pre-cursors. The Carbon Nanotube Field Effect Transistor (CNFET) is the present day technology. In this manuscript, we have used CNFET as the enabling technology to design a 1-bit Full Adder (1b-FA16) with overflow detection. The proposed 1b-FA16 is designed using 16 transistors. Finally, the proposed 1b-FA16 is further used to design a Ripple Carry Adder (RCA), Carry Look Ahead Adder (CLA) circuit and RCA with overflow bit detection. Methods and Results: The proposed 1b-FA16 circuit was designed with CNFET technology simulated at 32 nm with a voltage supply of +0.9 V using the Cadence Virtuoso CAD tool. The model used is Stanford PTM. Comparison of the existing full adder designs with the proposed 1b-FA16 design was done to validate the improvements in terms of power, delay and Power Delay Product (PDP). Table 2, shows the results of comparison for the proposed 1b-FA16 with the existing full adder designs implemented using CNFET for parameters like power, delay and power delay product. Conclusion: It can be concluded that the proposed 1b-FA16 yielded better results as compared to the existing full adder designs implemented using CNFET. The improvement in power, delay and power delay product was approximately 11%, 9% and 24% respectively. Hence, the proposed circuit implemented using CNFET gives a substantial rate of improvements over the existing circuits.

scholarly journals Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

2015 ◽  
Vol 2015 ◽  
pp. 1-13 ◽  
Author(s):  
‘Aqilah binti Abdul Tahrim ◽  
Huei Chaeng Chin ◽  
Cheng Siong Lim ◽  
Michael Loong Peng Tan
Keyword(s):  
High Speed ◽  
Average Power ◽  
Full Adder ◽  
Propagation Delay ◽  
Oxide Semiconductor ◽  
Process Technology ◽  
Subthreshold Region ◽  
And Performance ◽  
Power Delay Product ◽  
20 Nm

The scaling process of the conventional 2D-planar metal-oxide semiconductor field-effect transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm process technology. A new nonplanar device architecture called FinFET was invented to overcome the problem by allowing transistors to be scaled down into sub-20 nm region. In this work, the FinFET structure is implemented in 1-bit full adder transistors to investigate its performance and energy efficiency in the subthreshold region for cell designs of Complementary MOS (CMOS), Complementary Pass-Transistor Logic (CPL), Transmission Gate (TG), and Hybrid CMOS (HCMOS). The performance of 1-bit FinFET-based full adder in 16-nm technology is benchmarked against conventional MOSFET-based full adder. The Predictive Technology Model (PTM) and Berkeley Shortchannel IGFET Model-Common Multi-Gate (BSIM-CMG) 16 nm low power libraries are used. Propagation delay, average power dissipation, power-delay-product (PDP), and energy-delay-product (EDP) are analysed based on all four types of full adder cell designs of both FETs. The 1-bit FinFET-based full adder shows a great reduction in all four metric performances. A reduction in propagation delay, PDP, and EDP is evident in the 1-bit FinFET-based full adder of CPL, giving the best overall performance due to its high-speed performance and good current driving capabilities.

A NEW ROBUST AND HIGH-PERFORMANCE HYBRID FULL ADDER CELL

2011 ◽  
Vol 20 (04) ◽  
pp. 641-655 ◽  
Author(s):  
REZA FAGHIH MIRZAEE ◽  
MOHAMMAD HOSSEIN MOAIYERI ◽  
HAMID KHORSAND ◽  
KEIVAN NAVI
Keyword(s):  
Power Consumption ◽  
Great Improvement ◽  
High Performance ◽  
Full Adder ◽  
Good Choice ◽  
Lower Power ◽  
Pvt Variations ◽  
Power Delay Product ◽  
Full Swing ◽  
Hspice Simulation

A new 1-bit hybrid Full Adder cell is presented in this paper with the aim of reaching a robust and high-performance adder structure. While most of recent Full Adders are proposed with the purpose of using fewer transistors, they suffer from some disadvantages such as output or internal non-full-swing nodes and poor driving capability. Considering these drawbacks, they might not be a good choice to operate in a practical environment. Lowering the number of transistors can inherently lead to smaller occupied area, higher speed and lower power consumption. However, other parameters, such as robustness to PVT variations and rail-to-rail operation, should also be considered. While the robustness is taken into account, HSPICE simulation demonstrates a great improvement in terms of speed and power-delay product (PDP).

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