Thermally Assisted Photoemission for CMOS Device Analysis

1998 ◽  
Author(s):  
K. Symonds ◽  
J. Wilson
Keyword(s):  
Failure Modes ◽  
Impact Ionization ◽  
Light Emission ◽  
Fault Isolation ◽  
Dominant Factor ◽  
Limiting Factor ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Isolation Techniques ◽  
Cmos Vlsi

Abstract Enhancement of Existing Fault Isolation Techniques for CMOS VLSI Failure Analysis is important in keeping pace with device design and process technologies. Recently, we enhanced our photoemission microscopy capability by applying heat to the device during analysis1. This provided greater defect related light emission from nSRAM test structures and allowed identification of subtle failure modes not observable during room temperature inspection. In the present work, we investigate the theoretical dependencies of emission mechanisms and analyze experimental data to identify the dominant physical mechanisms involved with thermally assisted photoemission. We introduce a thermal factor to help quantify the effect from various light emitting structures. Experimentally, we find that emission mechanisms involving leaky and forward junctions are enhanced by temperature, and propose that the dominant factor for increased signal may be an increasing contribution from phonon absorption rather than phonon emission-based recombination. For emission mechanisms based on impact ionization; however, we find that the emission response is inversely proportional to temperature, and show that mobility degradation is the dominant limiting factor at higher temperatures.

scholarly journals Fault Identification and Isolation in Dynamic Systems Using Multiple Models

2019 ◽  
Vol 11 (1) ◽  
Author(s):  
Olivia Maria Alves Coelho ◽  
Wlamir O. L. Vianna ◽  
Takashi Yoneyama
Keyword(s):  
Dynamic Systems ◽  
Computational Models ◽  
Failure Modes ◽  
Fault Isolation ◽  
Fault Detection And Isolation ◽  
Multiple Models ◽  
Multiple Faults ◽  
Industrial Systems ◽  
Isolation Techniques ◽  
And Performance

The demand for more reliability, safety and performance in industrial systems is rapidly increasing every day. The early detection of faults can avoid catastrophic events and the identification of the fault nature and severity can lead to the most appropriated and efficient maintenance task. Thus, an enhanced system diagnosis feature has the potential to increase safety and reduce the operational costs. In this context, fault detection and isolation techniques are used as the basis for building powerful decision making tools. This work's objective is to identify and isolate multiple faults in dynamic systems through signal processing. An approach based on a multiple-models architecture is considered whereas the plant output signals is compared with simulation data from a set of models representing the failure modes being analysed. The Autonomous Multiple Models (AMM) technique is chosen for further residue estimation and fault isolation. A case study using computational models representing an electro-mechanical system is carried out in order to validate the proposed method and evaluate its performance and limitations such as failure modes not mapped through the models and its capability to handle concurrent faults.

Practical Dynamic Laser Stimulation Techniques for Complex Analog and Mixed Signal IC Failure Analysis

2017 ◽  
Author(s):  
Jeffrey Javier ◽  
Taylor Hurdle ◽  
Sammie Fernandez ◽  
Kari Van Vliet
Keyword(s):  
Failure Modes ◽  
Fault Isolation ◽  
Automatic Test Equipment ◽  
Temperature Dependent ◽  
Mixed Signal ◽  
Laser Stimulation ◽  
Isolation Techniques ◽  
Defect Sites ◽  
Dependent Failure ◽  
Development And Evolution

Abstract The increasing electrical design and physical complexity of semiconductor devices, especially in the analog and mixed signal (AMS) applications, directly influences the development and evolution of fault isolation techniques. One of these techniques is Dynamic Laser Stimulation (DLS) which is widely used in the industry for effective identification of subtle failure mechanisms and soft defects especially for AC signal-related failures [1, 2]. However, for analysis of some complex AMS IC failure modes, the tool’s standard setup may not always be compatible with the biasing requirements of the device. For example, the setup would typically require expensive and intricate test systems (i.e. Automatic test equipment (ATE), SCAN tester, etc.) to be interfaced with the DLS tool for the analysis to be feasible and successful [3, 4]. This paper presents simple and practical techniques to implement DLS without the need for an expensive test support system. These techniques were applied in three different FA cases involving AMS ICs with complex and temperature-dependent failure modes. The results of subsequent analysis indicated success in isolating the exact defect sites.

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Advanced Scan Diagnosis Based Fault Isolation and Defect Identification for Yield Learning

2005 ◽  
Author(s):  
Chris Eddleman ◽  
Nagesh Tamarapalli ◽  
Wu-Tung Cheng
Keyword(s):  
Failure Analysis ◽  
Fault Location ◽  
Effective Means ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Yield Analysis ◽  
Isolation Techniques ◽  
Yield Learning ◽  
Time Required ◽  
Inspection Data

Abstract Yield analysis of sub-micron devices is an ever-increasing challenge. The difficulty is compounded by the lack of in-line inspection data as many companies adopt foundry or fab-less models for acquiring wafers. In this scenario, failure analysis is increasingly critical to help drive yields. Failure analysis is a process of fault isolation, or a method of isolating failures as precisely as possible followed by identification of a physical defect. As the number of transistors and metal layers increase, traditional fault isolation techniques are less successful at isolating a cause of failures. Costs are increasing due to the amount of time needed to locate the physical defect. One solution to the yield analysis problem is scan diagnosis based fault isolation. Previous scan diagnosis based techniques were limited with little information about the type of fault and confidence of diagnosis. With new scan diagnosis algorithms it is now possible to not only isolate, but to identify the type of fault as well as assigning a confidence ranking prior to any destructive analysis. This paper presents multiple case studies illustrating the application of scan diagnosis as an effective means to achieve yield enhancement. The advanced scan diagnostic tool used in this study provides information about the fault type as well as fault location. This information focuses failure analysis efforts toward a suspected defect, decreasing the cycle time required to determine root cause, as well as increasing the over all success rate.

A Novel OBIRCH Fault Isolation Method to Locate the Leakage Failure Point

2008 ◽  
Author(s):  
Chi-Lin Huang ◽  
Yu Hsiang Shu
Keyword(s):  
Semiconductor Device ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cross Sectional ◽  
Isolation Technique ◽  
Isolation Techniques ◽  
Atomic Force ◽  
Analysis Experiment ◽  
Failure Point ◽  
Leakage Failure

Abstract Conventional isolation techniques, such as Optical Beam Induced Resistance Change (OBIRCH) or photoemission microscopy (PEM) frequently fail to locate failure points when only applied to power pin of the semiconductor device. In this paper, a novel OBIRCH failure isolation technique is utilized to detect leakage failures. Different test conditions are presented to identify the differences in current when all input pins are pulled high in an OBIRCH system. In order to verify a failure point, it is necessary to perform electrical analysis of the suspected failure point in the failing sample. In general, Conductive Atomic Force Microscope (C-AFM) and a Nano-Prober is sufficient to provide the electrical data required for failure analysis. Experiment results, however, prove that this novel OBIRCH failure isolation technique is effective in locating the failure point, especially for leakage failures. The failure mechanism is illustrated using cross-sectional TEM.

Magnetic Current Imaging Power Short Localization

2015 ◽  
Author(s):  
J. Gaudestad ◽  
F. Rusli ◽  
A. Orozco ◽  
M.C. Pun
Keyword(s):  
Thermal Imaging ◽  
Flip Chip ◽  
Optical Microscope ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Multiple Fault ◽  
Defect Location ◽  
Isolation Techniques ◽  
Chip Sample

Abstract A Flip Chip sample failed short between power and ground. The reference unit had 418Ω and the failed unit with the short had 16.4Ω. Multiple fault isolation techniques were used in an attempt to find the failure with thermal imaging and Magnetic Current Imaging being the only techniques capable of localizing the defect. To physically verify the defect location, the die was detached from the substrate and a die cracked was seen using a visible optical microscope.

scholarly journals Effect of Laser Irradiation on Emissivity of Flame-Generated Nanooxides

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2303
Author(s):  
Silvana De Iuliis ◽  
Roberto Dondè ◽  
Igor Altman
Keyword(s):  
Laser Irradiation ◽  
Light Emission ◽  
Energy Gap ◽  
Particle Temperature ◽  
Electron Excitation ◽  
Flame Spray ◽  
Energy Bands ◽  
Light Emitting ◽  
Spectral Behavior ◽  
The Difference

The application of pyrometry to retrieve particle temperature in particulate-generating flames strictly requires the knowledge of the spectral behavior of emissivity of light-emitting particles. Normally, this spectral behavior is considered time-independent. The current paper challenges this assumption and explains why the emissivity of oxide nanoparticles formed in flame can change with time. The suggested phenomenon is related to transitions of electrons between the valence and conduction energy bands in oxides that are wide-gap dielectrics. The emissivity change is particularly crucial for the interpretation of fast processes occurring during laser-induced experiments. In the present work, we compare the response of titania particles produced by a flame spray to the laser irradiation at two different excitation wavelengths. The difference in the temporal behavior of the corresponding light emission intensities is attributed to the different mechanisms of electron excitation during the laser pulse. Interband transitions that are possible only in the case of the laser photon energy exceeding the titania energy gap led to the increase of the electron density in the conduction band. Relaxation of those electrons back to the valence band is the origin of the observed emissivity drop after the UV laser irradiation.

scholarly journals Recent advancements and perspectives on light management and high performance in perovskite light-emitting diodes

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Shaoni Kar ◽  
Nur Fadilah Jamaludin ◽  
Natalia Yantara ◽  
Subodh G. Mhaisalkar ◽  
Wei Lin Leong
Keyword(s):  
High Performance ◽  
Light Propagation ◽  
Light Emission ◽  
Review Article ◽  
Rapid Progress ◽  
Light Emitting ◽  
Materials Engineering ◽  
Perovskite Materials ◽  
Light Management ◽  
Photon Recycling

Abstract Perovskite semiconductors have experienced meteoric rise in a variety of optoelectronic applications. With a strong foothold on photovoltaics, much focus now lies on their light emission applications. Rapid progress in materials engineering have led to the demonstration of external quantum efficiencies that surpass the previously established theoretical limits. However, there remains much scope to further optimize the light propagation inside the device stack through careful tailoring of the optical processes that take place at the bulk and interface levels. Photon recycling in the emitter material followed by efficient outcoupling can result in boosting external efficiencies up to 100%. In addition, the poor ambient and operational stability of these materials and devices restrict further commercialization efforts. With best operational lifetimes of only a few hours reported, there is a long way to go before perovskite LEDs can be perceived as reliable alternatives to more established technologies like organic or quantum dot-based LED devices. This review article starts with the discussions of the mechanism of luminescence in these perovskite materials and factors impacting it. It then looks at the possible routes to achieve efficient outcoupling through nanostructuring of the emitter and the substrate. Next, we analyse the instability issues of perovskite-based LEDs from a photophysical standpoint, taking into consideration the underlying phenomena pertaining to defects, and summarize recent advances in mitigating the same. Finally, we provide an outlook on the possible routes forward for the field and propose new avenues to maximally exploit the excellent light-emitting capabilities of this family of semiconductors.

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