Intermittent Failures in High Pin Count Packaging

2006 ◽  
Author(s):  
Ramesh Varma ◽  
Richard Brooks ◽  
Ronald Twist ◽  
James Arnold ◽  
Cleston Messick
Keyword(s):  
Failure Analysis ◽  
Shape Analysis ◽  
State Of The Art ◽  
Process Variation ◽  
High Reliability ◽  
Temperature Cycling ◽  
Assembly Process ◽  
System Failures ◽  
Industrial Grade ◽  
Corrective Actions

Abstract In a prequalification effort to evaluate the assembly process for the industrial grade high pin count devices for use in a high reliability application, one device exhibited characteristics that, without corrective actions and/or extensive screening, may lead to intermittent system failures and unacceptable reliability. Five methodologies confirmed this conclusion: (1) low post-decapsulation wire pull results; (2) bond shape analysis showed process variation; (3) Failure Analysis (FA) using state of the art equipment determined the root causes and verified the low wire pull results; (4) temperature cycling parts while monitoring, showed intermittent failures, and (5) parts tested from other vendors using the same techniques passed all limits.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

Case Study—Failure Analysis of a Multiplexer

2016 ◽  
Author(s):  
Michael Woo ◽  
Marcos Campos ◽  
Luigi Aranda
Keyword(s):  
Failure Analysis ◽  
High Reliability ◽  
Component Failure ◽  
Root Cause ◽  
Knowing That ◽  
Cause Of Failure ◽  
The Cost

Abstract A component failure has the potential to significantly impact the cost, manufacturing schedule, and/or the perceived reliability of a system, especially if the root cause of the failure is not known. A failure analysis is often key to mitigating the effects of a componentlevel failure to a customer or a system; minimizing schedule slips, minimizing related accrued costs to the customer, and allowing for the completion of the system with confidence that the reliability of the product had not been compromised. This case study will show how a detailed and systemic failure analysis was able to determine the exact cause of failure of a multiplexer in a high-reliability system, which allowed the manufacturer to confidently proceed with production knowing that the failure was not a systemic issue, but rather that it was a random “one time” event.

Infra-Red Reflectance Microscopy (IRRM) for Daisy Chain Flip Chip Device Failure Analysis

2004 ◽  
Author(s):  
Carlo Grilletto ◽  
Steve Hsiung ◽  
Andrew Komrowski ◽  
John Soopikian ◽  
Daniel J.D. Sullivan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
State Of The Art ◽  
Failure Mechanisms ◽  
Simple Metal ◽  
X Ray ◽  
Infra Red ◽  
Cause Of Failure ◽  
Reflectance Microscopy ◽  
Ir Emission

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.

scholarly journals Fast Accurate and Automatic Brushstroke Extraction

2021 ◽  
Vol 17 (2) ◽  
pp. 1-24
Author(s):  
Yunfei Fu ◽  
Hongchuan Yu ◽  
Chih-Kuo Yeh ◽  
Tong-Yee Lee ◽  
Jian J. Zhang
Keyword(s):  
Neural Network ◽  
Efficient Algorithm ◽  
Deep Neural Network ◽  
High Efficiency ◽  
State Of The Art ◽  
High Reliability ◽  
The Other ◽  
Manual Annotation ◽  
Stroke Extraction ◽  
Art Research

Brushstrokes are viewed as the artist’s “handwriting” in a painting. In many applications such as style learning and transfer, mimicking painting, and painting authentication, it is highly desired to quantitatively and accurately identify brushstroke characteristics from old masters’ pieces using computer programs. However, due to the nature of hundreds or thousands of intermingling brushstrokes in the painting, it still remains challenging. This article proposes an efficient algorithm for brush Stroke extraction based on a Deep neural network, i.e., DStroke. Compared to the state-of-the-art research, the main merit of the proposed DStroke is to automatically and rapidly extract brushstrokes from a painting without manual annotation, while accurately approximating the real brushstrokes with high reliability. Herein, recovering the faithful soft transitions between brushstrokes is often ignored by the other methods. In fact, the details of brushstrokes in a master piece of painting (e.g., shapes, colors, texture, overlaps) are highly desired by artists since they hold promise to enhance and extend the artists’ powers, just like microscopes extend biologists’ powers. To demonstrate the high efficiency of the proposed DStroke, we perform it on a set of real scans of paintings and a set of synthetic paintings, respectively. Experiments show that the proposed DStroke is noticeably faster and more accurate at identifying and extracting brushstrokes, outperforming the other methods.

scholarly journals Resolution of Damaged Metallization on Highly Complex Semiconductor Device

2020 ◽  
pp. 7-12
Author(s):  
Antonio Sumagpang Jr. ◽  
Frederick Ray Gomez
Keyword(s):  
Design Of Experiments ◽  
Semiconductor Device ◽  
Electrostatic Discharge ◽  
Test Design ◽  
Functional Testing ◽  
Assembly Process ◽  
Short Contact ◽  
Contact Test ◽  
Corrective Actions ◽  
Complex Semiconductor

The paper focused on the resolution of damaged metallization during assembly process that lead to gross open-short (O/S) rejections during functional testing of a highly complex semiconductor package. Numerous batches were put on hold due to not meeting the specification assigned for the short contact test. Design of experiments (DOE) on assembly processes were conducted and eventually identified the reject as an electrostatic discharge (ESD) related failure. Corrective actions and ESD controls significantly reduced the occurrence of damaged metallization with around 85% reduction.

Embedded Die Packages and Modules for Power Electronics Applications

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 001918-001947 ◽  
Author(s):  
Lars Boettcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
A. Ostmann
Keyword(s):  
Power Electronics ◽  
Power Efficiency ◽  
High Reliability ◽  
Heat Removal ◽  
Testing Temperature ◽  
Temperature Cycling ◽  
Switching Frequency ◽  
Large Area ◽  
Power Modules ◽  
Embedded Power

Packages and modules with embedded semiconductor dies are of interest for various application fields and power classes. First packages in the lower power range are available in volume production since almost six years. Recent developments focus on medium and higher power applications raging over 500W into the kW range. Different approaches are available to realize such packages and modules. This paper will give an overview and detailed description of the latest approaches for such embedded die structures. In common of all of these approaches, is the use of laminate based die embedding, which uses standard PCB manufacturing technologies. Main differences are the used base substrate, which can still be a ceramic (DBC), Cu leadframe or high current substrate. Examples for the different methods will be given. As the main part, this paper will describe concepts, which enable significant smaller form-factor of power electronics modules, thereby allowing for lower price, high reliability, capability of direct mounting on e.g. a motor so as to form one unit with the motor housing, wide switching frequency range (for large application field) and high power efficiency. The innovative character of this packaging concept is the idea to embed the power drive components (IGBTs, MOSFETs, diode) as thinned chips into epoxy-resin layer built-up and to realize large-area interconnections on both sides by direct copper plating the dies to form a conductor structure with lowest possible electrical impedance and to achieve an optimum heat removal. In this way a thin core is formed on a large panel format which is called Embedded Power Core. The paper will specifically highlight the first results on manufacturing an embedded power discrete package as an example of an embedded power core containing a thin rectifier diode. For module realization, the power cores are interconnected to insulated metal substrates (IMS) by the use of Ag sintering interconnection technologies for the final manufacturing of Power modules. The paper will elaborate on the sintering process for Power Core/IMS interconnections, the microscopically features of the sintered interfaces, and the lateral filling of the sintering gap with epoxy prepregs. Firstly, 500W power modules were manufactured using this approach. Reliability testing results, solder reflow testing, temperature cycling test and active power cycling, will be discussed in detail.

Technologies and Trends to Improve Power Electronic Packaging

2011 ◽  
Vol 2011 (1) ◽  
pp. 000430-000437
Author(s):  
M. Schneider-Ramelow ◽  
M. Hutter ◽  
H. Oppermann ◽  
J.-M. Göhre ◽  
S. Schmitz ◽  
...  
Keyword(s):  
High Reliability ◽  
Transient Liquid Phase ◽  
Wire Bonding ◽  
Temperature Cycling ◽  
Material Behavior ◽  
Process Selection ◽  
Chip Surface ◽  
Bonding Parameters ◽  
Strong Trend ◽  
Die Attach

In the realm of power modules a strong trend toward high temperature and high reliability applications can be observed, which entails new technological challenges, especially for the assembly and packaging of power semiconductors. Because of the well known failure mechanisms of established lead-free standard soldering and heavy aluminum wire bonding technologies, such as fatigue and creep of die attach material and wire bonds at thermal cycling, academic and industrial research focuses on more reliable interconnection technologies. A priority is the research of alternative top and bottom side chip interconnection materials or technologies to improve the temperature cycling capability of power chips that are typically assembled on ceramic substrates. The scientific focus is on Ag sintering as die attach and/or heavy ribbon bonding, for example with Al or bi-metal (Al-Cu). Another focus is the material behavior of ribbon bonds in combination with bonding machine improvements (higher bonding parameters, cutting tool). But there are other very promising technologies like transient liquid phase bonding, for example with Cu-Sn or Ag-Sn systems or Cu heavy wire bonding (up to 400 μm wire diameter) or Cu/Al-Bi metal ribbon bonding. Challenges posed by these technologies have to be discussed focusing on materials and process selection and reliability issues. Process temperatures and temperature profiles must be optimized, wire bonding machines and the chip surface structures as well as finish metallizations need to be adapted. This paper will give an overview of alternative power chip interconnection technologies and discuss the challenges related to processing and reliability.

Manufacturability and Reliability Screening of Lower Melting Point, Pb-Free Alloys Containing Bismuth

2015 ◽  
Vol 12 (1) ◽  
pp. 1-28 ◽  
Author(s):  
Joseph M. Juarez ◽  
Polina Snugovsky ◽  
Eva Kosiba ◽  
Zohreh Bagheri ◽  
Subramaniam Suthakaran ◽  
...  
Keyword(s):  
High Reliability ◽  
Temperature Cycling ◽  
Vibration Testing ◽  
Excellent Performance ◽  
Test Conditions ◽  
Surface Finishes ◽  
Before And After ◽  
Microstructure Examination ◽  
Lower Melting Point ◽  
Failure Monitoring

This paper explores the manufacturability and reliability of three Pb-free Bi-containing alloys in comparison with conventional SAC305 and SnPb assemblies. The first alloy included in the study is a Sn-based alloy with 3.4%Ag and 4.8%Bi, which showed promising results in the National Center for Manufacturing Sciences and German Joint projects. The other two alloy variations have reduced Ag content, with and without Cu. BGA and leaded components were assembled on medium-complexity test vehicles using these alloys, as well as SAC305 and SnPb as baseline alloys, for comparison. Test vehicles were manufactured using two board materials, 170°C glass transition temperature (Tg) and 155°C Tg, with three surface finishes: ENIG, ENEPIG, and OSP. The accelerated temperature cycling (ATC) testing was done at −55°C to 125°C with 30-min dwells and 10°C/min ramps, for 3,000 cycles. Detailed microstructure examination before and after ATC testing is described, as is failure analysis. All three experimental alloys showed excellent performance in harsh-environment thermal cycling. Vibration testing at two G-force test conditions with resistance failure monitoring was performed on the daisy-chained components. A detailed description of the technique for the vibration testing using 2 G and 5 G harmonic dwells is provided. The lowest failure rate found at both the 2 G and 5 G levels was for the Cu-containing alloy known as Violet. These results provide data for further statistical analysis leading to the choice of proper combinations of the solder alloys, board materials, and surface finishes for high-reliability applications.

A History of the Fractography of Brittle Materials

2009 ◽  
Vol 409 ◽  
pp. 1-16 ◽  
Author(s):  
George D. Quinn
Keyword(s):  
Fracture Mechanics ◽  
Failure Analysis ◽  
State Of The Art ◽  
Brittle Materials ◽  
Fractographic Analysis ◽  
Current State ◽  
History Of ◽  
Scientists And Engineers ◽  
Work Done ◽  
Study Of Fracture Surfaces

The evolution of the science of fractography of brittle materials initially was driven by failure analysis problems. Early analyses focused on general patterns of fracture and how they correlated to the loading conditions. Many early documents are simply descriptive, but the curiosity of some key scientists and engineers was aroused. Scientific or engineering explanations for the observed patterns gradually were developed. Advances in microscopy and flaw based theories of strength and fracture mechanics led to dramatic advances in the state of the art of fractographic analysis of brittle materials. Introduction: This author was drawn backwards in time as he researched the current state of the art of fractographic analysis of brittle materials for his fractography guide book.[ ] Others have written about how the fractographic analysis of metals evolved (e.g., [ , , , ]), but there is no analogue for ceramics and glasses. The key scientists, engineers, and analysts who contributed to our field are shown in Fig. 1. Other work done by industry workers who were unable or loathe to publish is now lost, inaccessible, forgotten, or even discarded. It is the goal of this paper to review the key publications and mark the noteworthy advances in the field. Some deem fractography as the study of fracture surfaces, but this author takes a broader view. Fractography is the means and methods for characterizing fractured specimens or components and, for example, a simple examination of the fragments and how they fit together to study the overall breakage pattern is a genuine fractographic analysis.

Sign in / Sign up

Export Citation Format

Share Document