Electrical Probing Role in 14nm SOI Microprocessor Failure Analysis

2020 ◽  
Author(s):  
Zhigang Song ◽  
Pat McGinnis ◽  
Dave Albert ◽  
Greg Hornicek ◽  
Mike Tenney ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Semiconductor Industry ◽  
Photon Emission ◽  
Feature Size ◽  
Microelectronic Devices ◽  
Scan Chain ◽  
Rate Of Failure ◽  
Good Success Rate

Abstract Failure analysis plays a very important role in semiconductor industry. Photon Emission Microscopy (PEM) has been extensively used in localization of fails in microelectronic devices. However, PEM emission site is not necessarily at the location of the defect. Thus, it has limitation for the success rate of the follow-up physical failure analysis focusing on the emission site. As semiconductor technology advanced in the 3D FinFET realm and feature size further shrank down, the invisible defects during SEM inspection are tremendously increased. It leads to the success rate further decreasing. To maintain good success rate of failure analysis for advanced 3D FinFET technology, electrical probing is necessary to be incorporated into the failure analysis flow. In this paper, first, the statistic results of PEM emission sites versus real defect locations from 102 modules of microprocessors manufactured by 14nm 3D FinFET technology was present. Then, we will present how to wisely design electrical probing plan after PEM analysis. The electrical probing plans are tailored to different scan chain and ATPG failures of microprocessors for improving failure analysis success rate without increasing too much turn-around time. Finally, two case studies have been described to demonstrate how the electrical probing results guide the follow-up physical failure analysis to find the defect.

scholarly journals Pairing Laser Ablation and Xe Plasma FIB-SEM: An Approach for Precise End-Pointing in Large-Scale Physical Failure Analysis in the Semiconductor Industry

2021 ◽  
Author(s):  
Rodrigo Delgadillo Blando ◽  
Lukáš Hladík ◽  
Jozef Vincenc Oboňa ◽  
Tomáš Borůvka ◽  
Martin Burán ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Failure Analysis ◽  
Cross Sections ◽  
Large Scale ◽  
Bulk Material ◽  
Semiconductor Industry ◽  
Surface Polishing ◽  
Area Of Interest ◽  
Microelectronic Devices ◽  
Correlation Data

Abstract In this work we present a large-volume workflow for fast failure analysis of microelectronic devices that combines a stand-alone ps-laser ablation tool with a SEM/Xe Plasma FIB system. In this synergy, the ps-laser is used to quickly remove large volumes of bulk material while the SEM/Xe Plasma FIB is used for precise end-pointing to the feature of interest and fine surface polishing after laser. The concept of having a stand-alone laser tool obeys the logic of maximizing productivity as both systems can work simultaneously and continuously. As application examples we first present a full workflow to prepare an artefact-free, delamination-free cross-section in an AMOLED mobile display. We also present applications examples that require cm-sized long cuts to cut through whole microelectronic devices, or removal of cubic-mm of material to prepare mm-sized cross-sections in packages. We discuss a way how to implement correlation data across the laser and FIBSEM platforms through SYNOPSYS Avalon SW allowing precise navigation to the area of interest using layout circuit overlays. We also show an example of image bitmap overlay to navigate across platforms and end-pointing.

Accelerating Technology Development and Yield Ramp on First Silicon Utilizing a Wafer-Level Dynamic EFA System

2016 ◽  
Author(s):  
Li-Qing Chen ◽  
Ming-Sheng Sun ◽  
Jui-Hao Chao ◽  
Soon Fatt Ng ◽  
Kapilevich Izak ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
Photon Emission ◽  
Wafer Level ◽  
Success Story ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Soft Failure ◽  
Scan Chain ◽  
Hard Failure

Abstract This paper presents the success story of the learning process by reporting four cases using four different failure analysis techniques. The cases covered are IDDQ leakage, power short, scan chain hard failure, and register soft failure. Hardware involved in the cases discussed are Meridian WS-DP, a wafer-level electrical failure analysis (EFA) system from DCG Systems, V9300 tester from Advantest, and a custom cable interface integrating WSDP and V9300 with the adaption of direct-probe platform that is widely deployed for SoC CP test. Four debug cases are reported in which various EFA techniques are proven powerful and effective, including photon emission, OBIRCH, Thermal Frequency Imaging, LVI, LVP, and dynamic laser stimulation.

scholarly journals Surgical Outcome of Dacrystorhinostomy in Fistulous Dacryocystitis

2021 ◽  
Vol 37 (4) ◽  
Author(s):  
Noman Ahmed ◽  
Arsalan Ahmed Shaikh ◽  
Munawar Ahmed ◽  
Ashok Kumar Narsani ◽  
Muhammad Luqman Ali Bahoo
Keyword(s):  
Success Rate ◽  
Surgical Outcomes ◽  
University Hospital ◽  
P Value ◽  
Post Surgery ◽  
Quasi Experimental ◽  
The Mean ◽  
Mean Time ◽  
Good Success Rate

Purpose:  To study the surgical outcomes of Dacryocystorhinostomy (DCR) in fistulous dacryocystitis. Study Design:  Quasi Experimental study. Place and Duration of Study:  The detailed study was carried out in the Institute of Ophthalmology, Liaquat University Hospital Jamshoro, between September 2018 to August 2020. Material and Methods:  We analyzed the histories of 30 patients taking the DCR procedure and noted their mean age, standard deviation, follow-up time, complications and other details. We also reported the intraoperative anatomical results, postoperative analysis, and variable groups vs. outcomes post-surgery using SPSS Version 20. Results:  The mean patient's age was 44.2 ± 4.13years, where males to female percentages were 27% to 73%. We noted significant changes in patients with a success rate of 87% displayed by no relieved epiphora and lacrimal patency in 1 month, 3 months, and 6 months. The mean time of the patients was 4 months varying between 1 to 8 (months) and the variable group values vs. surgical outcomes showed no significant association between the variables (p-value ranging from 0.195 to 0.935). Conclusion:  Complications resulting in some patient’s post-surgery are manageable and the surgical technique has a good success rate. Key Words:  (DCR) Dacryocystorhinostomy, lacrimal Patency, fistulous Dacryocystitis, Scarring.

Klinische Langzeitergebnisse der perkutanen transluminalen Angioplastie bei Patienten mit peripherer arterieller Verschlusskrankheit

VASA ◽  
2002 ◽  
Vol 31 (1) ◽  
pp. 36-42 ◽  
Author(s):  
. Bucek ◽  
Hudak ◽  
Schnürer ◽  
Ahmadi ◽  
Wolfram ◽  
...  
Keyword(s):  
Success Rate ◽  
Clinical Stage ◽  
Ankle Brachial Index ◽  
Clinical Situation ◽  
Clinical Results ◽  
Transluminal Angioplasty ◽  
Term Outcome ◽  
Long Term Outcome

Background: We investigated the long-term clinical results of percutaneous transluminal angioplasty (PTA) in patients with peripheral arterial occlusive disease (PAOD) and the influence of different parameters on the primary success rate, the rate of complications and the long-term outcome. Patients and methods: We reviewed clinical and hemodynamic follow-up data of 166 consecutive patients treated with PTA in 1987 in our department. Results: PTA improved the clinical situation in 79.4% of patients with iliac lesions and in 88.3% of patients with femoro-popliteal lesions. The clinical stage and ankle brachial index (ABI) post-interventional could be improved significantly (each P < 0,001), the same results were observed at the end of follow-up (each P < 0,001). Major complications occurred in 11 patients (6.6%). The rate of primary clinical long-term success for suprainguinal lesions was 55% and 38% after 5 and 10 years (femoro-popliteal 44% and 33%), respectively, the corresponding data for secondary clinical long-term success were 63% and 56% (60% and 55%). Older age (P = 0,017) and lower ABI pre-interventional (P = 0,019) significantly deteriorated primary clinical long-term success for suprainguinal lesions, while no factor could be identified influencing the outcome of femoro-popliteal lesions significantly. Conclusion: Besides an acceptable success rate with a low rate of severe complications, our results demonstrate favourable long-term clinical results of PTA in patients with PAOD.

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

Thin-Die Flip Chip Physical-FA Process Flow

2002 ◽  
Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Semiconductor Industry ◽  
Organic Substrate ◽  
Fault Isolation ◽  
Preparation Methods ◽  
Chip Technology ◽  
Isolation Test ◽  
Sample Preparation Methods

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Failure Analysis Enhancement by Incorporating a Compact Scan Diagnosis System

2014 ◽  
Author(s):  
Rommel Estores ◽  
Pascal Vercruysse ◽  
Karl Villareal ◽  
Eric Barbian ◽  
Ralph Sanchez ◽  
...  
Keyword(s):  
Data Analysis ◽  
Failure Analysis ◽  
Real Analysis ◽  
Failure Data ◽  
Analysis Methodology ◽  
Efficiency And Effectiveness ◽  
Scan Chain ◽  
On Chip ◽  
Analysis Environment ◽  
Selection Of

Abstract The failure analysis community working on highly integrated mixed signal circuitry is entering an era where simultaneously System-On-Chip technologies, denser metallization schemes, on-chip dissipation techniques and intelligent packages are being introduced. These innovations bring a great deal of defect accessibility challenges to the failure analyst. To contend in this era while aiming for higher efficiency and effectiveness, the failure analysis environment must undergo a disruptive evolution. The success or failure of an analysis will be determined by the careful selection of tools, data and techniques in the applied analysis flow. A comprehensive approach is required where hardware, software, data analysis, traditional FA techniques and expertise are complementary combined [1]. This document demonstrates this through the incorporation of advanced scan diagnosis methods in the overall analysis flow for digital functionality failures and supporting the enhanced failure analysis methodology. For the testing and diagnosis of the presented cases, compact but powerful scan test FA Lab hardware with its diagnosis software was used [2]. It can therefore easily be combined with the traditional FA techniques to provide stimulus for dynamic fault localizations [3]. The system combines scan chain information, failure data and layout information into one viewing environment which provides real analysis power for the failure analyst. Comprehensive data analysis is performed to identify failing cells/nets, provide a better overview of the failure and the interactions to isolate the fault further to a smaller area, or to analyze subtle behavior patterns to find and rationalize possible faults that are otherwise not detected. Three sample cases will be discussed in this document to demonstrate specific strengths and advantages of this enhanced FA methodology.

Introduction of Spectral Mapping through Transmission Grating, Derivative Technique of Photon Emission

2014 ◽  
Author(s):  
Thierry Parrassin ◽  
Sylvain Dudit ◽  
Michel Vallet ◽  
Antoine Reverdy ◽  
Hervé Deslandes
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Light Emission ◽  
Photon Emission ◽  
Optical Path ◽  
Spectral Mapping ◽  
Additional Information ◽  
Transmission Grating ◽  
Emission System ◽  
Advance Knowledge

Abstract By adding a transmission grating into the optical path of our photon emission system and after calibration, we have completed several failure analysis case studies. In some cases, additional information on the emission sites is provided, as well as understanding of the behavior of transistors that are associated to the fail site. The main application of the setup is used for finding and differentiating easily related emission spots without advance knowledge in light emission mechanisms in integrated circuits.

Layout Overlay Techniques to Improve Failure Analysis

1998 ◽  
Author(s):  
Christian Burmer ◽  
Siegfried Görlich ◽  
Siegfried Pauthner
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
New Technologies ◽  
Ion Beam ◽  
Image Correlation ◽  
Microelectronic Devices ◽  
Overlay Technique ◽  
Correlation Techniques ◽  
Navigation Software ◽  
Image Format

Abstract New layout overlay technique has been developed based on standard image correlation techniques to support failure analysis in modern microelectronic devices, which are critical to analyze because they are realized in new technologies using sub-ìm design rules, chemical mechanical polishing techniques (CMP) and autorouted design techniques. As the new technique is realized as an extension of a standard CAD-navigation software and as it makes use of standard image format "TIFF" for data input, which is available at all modern equipments for failure analysis, these technique can be applied to all modern failure analysis methods. Here examples are given for three areas of application: circuit modification using Focused Ion Beam (FIB), support of preparation for backside inspection and fault localization using emission microscopy.

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