scholarly journals 10-GHz wide tuning-range linear voltage-controlled oscillator

2021 ◽  
Author(s):  
Sameh Soliman
Keyword(s):  
High Speed ◽  
Tuning Range ◽  
Serial Communication ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Center Frequency ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Communication Circuits ◽  
Simulation Results

The current high-growth nature of digital communications demands higher speed serial communication circuits. Present day technologies barely manage to keep up with this demand, and new techniques are required to ensure that serial communication can continnue to expand and grow. The goal of this work is to optimize the performance of an essential building block of serial communication circuits, namely, the phase-locked loop (PLL), so that it can cope with today's high-speed communication. Due to its popularity, the optimization has targeted the charge-pump-based implementqation of the phase-locked loop. This goal is achieved by researching, designing, and evaluating high speed serial communication circuits. Research has involved an in-depth study of the state of the art in high-speed serial communication circuits ; high-speed, controlled oscillators, and CMOS technology. An LC, voltage-controlled oscillator (VCO) is designed in 0.18-micron, mixed-signal, 6-metal-2-poly, CMOS process. A novel tuning technique is employed to tune its output frequency. Simulation results shows that it provides quadrature and differential outputs, operates with 10 GHz center frequency, 600-MHz tuning range centered around its center frequency, and phase noise of -95 dBc/Hz at 1-MHz offset from the fundamental harmonic of its output, and draws 10 ,A of DC current from a single 1.8-V power supply. Also, it exhibits a good linearity throughout its tuning range. The new tuning technique increases the tuning range of the VCO to 6% of its center frequency compared to the 1-to-2% typical value. As its locking performance depends on the characteristic of the employed VCO and to demonstrate the effect of optimizing the tuning range of the VCO, a charge-pump PLL is designed. Simulation results shows that the PLL acquisition range is 300 MHz compared to a maximum value of 100 MHz when a conventional LC VCO is employed. Also, as a measure of its tracking range, the maximum frequency slew rate of its input has improved by 40%.

scholarly journals 10-GHz wide tuning-range linear voltage-controlled oscillator

2021 ◽  
Author(s):  
Sameh Soliman
Keyword(s):  
High Speed ◽  
Tuning Range ◽  
Serial Communication ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Center Frequency ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Communication Circuits ◽  
Simulation Results

The current high-growth nature of digital communications demands higher speed serial communication circuits. Present day technologies barely manage to keep up with this demand, and new techniques are required to ensure that serial communication can continnue to expand and grow. The goal of this work is to optimize the performance of an essential building block of serial communication circuits, namely, the phase-locked loop (PLL), so that it can cope with today's high-speed communication. Due to its popularity, the optimization has targeted the charge-pump-based implementqation of the phase-locked loop. This goal is achieved by researching, designing, and evaluating high speed serial communication circuits. Research has involved an in-depth study of the state of the art in high-speed serial communication circuits ; high-speed, controlled oscillators, and CMOS technology. An LC, voltage-controlled oscillator (VCO) is designed in 0.18-micron, mixed-signal, 6-metal-2-poly, CMOS process. A novel tuning technique is employed to tune its output frequency. Simulation results shows that it provides quadrature and differential outputs, operates with 10 GHz center frequency, 600-MHz tuning range centered around its center frequency, and phase noise of -95 dBc/Hz at 1-MHz offset from the fundamental harmonic of its output, and draws 10 ,A of DC current from a single 1.8-V power supply. Also, it exhibits a good linearity throughout its tuning range. The new tuning technique increases the tuning range of the VCO to 6% of its center frequency compared to the 1-to-2% typical value. As its locking performance depends on the characteristic of the employed VCO and to demonstrate the effect of optimizing the tuning range of the VCO, a charge-pump PLL is designed. Simulation results shows that the PLL acquisition range is 300 MHz compared to a maximum value of 100 MHz when a conventional LC VCO is employed. Also, as a measure of its tracking range, the maximum frequency slew rate of its input has improved by 40%.

Design and analysis of a low noise CMOS charge pump phase locked loop circuit

2021 ◽  
pp. 2140002
Author(s):  
Yanbo Chen ◽  
Shubin Zhang
Keyword(s):  
Phase Noise ◽  
Supply Voltage ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Low Noise ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Output Frequency ◽  
Power Supply Voltage ◽  
Supply Noise

Phase Locked Loop (PLL) circuit plays an important part in electronic communication system in providing high-frequency clock, recovering the clock from data signal and so on. The performance of PLL affects the whole system. As the frequency of PLL increases, designing a PLL circuit with lower jitter and phase noise becomes a big challenge. To suppress the phase noise, the optimization of Voltage Controlled Oscillator (VCO) is very important. As the power supply voltage degrades, the VCO becomes more sensitive to supply noise. In this work, a three-stage feedforward ring VCO (FRVCO) is designed and analyzed to increase the output frequency. A novel supply-noise sensing (SNS) circuit is proposed to suppress the supply noise’s influence on output frequency. Based on these, a 1.2 V 2 GHz PLL circuit is implemented in 110 nm CMOS process. The phase noise of this CMOS charge pump (CP) PLL is 117 dBc/Hz@1 MHz from test results which proves it works successfully in suppressing phase noise.

scholarly journals A Phase-Locked Loop with 30% Jitter Reduction Using Separate Regulators

VLSI Design ◽  
2008 ◽  
Vol 2008 ◽  
pp. 1-8 ◽  
Author(s):  
Tzung-Je Lee ◽  
Chua-Chin Wang
Keyword(s):  
Power Consumption ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Supply Noise

A phase-locked loop (PLL) using separate regulators to reject the supply noise is proposed in this paper. Two regulators, REG1 and REG2, are used to prevent the supply noise from the charge pump (CP) and the voltage-controlled oscillator (VCO), respectively. By using separate regulators, the area and the power consumption of the regulator can be reduced. Moreover, the jitter of the proposed PLL is proven on silicon to be less sensitive to the supply noise. The proposed PLL is fabricated using a typical 0.35 μm 2P4M CMOS process. The peak-to-peak jitter (P2P jitter) of the proposed PLL is measured to be 81.8 ps at 80 MHz when a 250 mVrms supply noise is added. By contrast, the P2P jitter is measured to be 118.2 ps without the two regulators when the same supply noise is coupled.

A 800μW 1GHz Charge Pump Based Phase-Locked Loop in Submicron CMOS Process

2010 ◽  
Vol 56 (4) ◽  
pp. 411-416 ◽  
Author(s):  
Adam Zaziabl
Keyword(s):  
Low Power ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Frequency Multiplier ◽  
Center Frequency ◽  
Cmos Process ◽  
Clock Generation ◽  
Submicron Process ◽  
Submicron Cmos ◽  
Circuit Techniques

A 800μW 1GHz Charge Pump Based Phase-Locked Loop in Submicron CMOS ProcessDemand of modern measurement systems in submicron CMOS process introduced new challenges in design of low power high frequency clock generation systems. Technical possibilities for clock generation using classical oscillator based on a quartz filter is limited to tens of megahertz. Thus, 1 GHz clock generation is not possible without a frequency multiplier system. It is difficult to achieve, because in submicron process, where the integration of analog and digital blocks poses serious challenges. The proposed solution is a low power charge pump phase-locked loop (CPPLL) with the center frequency of 1 GHz. It combines various modern circuit techniques, whose main aim is to lower power consumption, which is below 800 μW for the whole PLL, while maintaining good noise properties, where the jitter rms is 8.87 ps. The proposed phase-locked loop is designed in 0.18 μm CMOS process.

Power Efficient Implementation of Low Noise CMOS LC VCO using 32nm Technology for RF Applications

2018 ◽  
Vol 6 (8) ◽  
pp. 53
Author(s):  
Shitesh Tiwari ◽  
Sumant Katiyal ◽  
Parag Parandkar
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Tuning Range ◽  
Low Voltage ◽  
Performance Comparison ◽  
Low Noise ◽  
Center Frequency ◽  
Voltage Controlled Oscillator ◽  
Low Phase Noise ◽  
Lc Vco

Voltage Controlled Oscillator (VCO) is an integral component of most of the receivers such as GSM, GPS etc. As name indicates, oscillation is controlled by varying the voltage at the capacitor of LC tank. By varying the voltage, VCO can generate variable frequency of oscillation. Different VCO Parameters are contrasted on the basis of phase noise, tuning range, power consumption and FOM. Out of these phase noise is dependent on quality factor, power consumption, oscillation frequency and current. So, design of LC VCO at low power, low phase noise can be obtained with low bias current at low voltage.  Nanosize transistors are also contributes towards low phase noise. This paper demonstrates the design of low phase noise LC VCO with 4.89 GHz tuning range from 7.33-11.22 GHz with center frequency at 7 GHz. The design uses 32nm technology with tuning voltage of 0-1.2 V. A very effective Phase noise of -114 dBc / Hz is obtained with FOM of -181 dBc/Hz. The proposed work has been compared with five peer LC VCO designs working at higher feature sizes and outcome of this performance comparison dictates that the proposed work working at better 32 nm technology outperformed amongst others in terms of achieving low Tuning voltage and moderate FoM, overshadowed by a little expense of power dissipation. 

scholarly journals An Ultra-Low-Power K-Band 22.2 GHz-to-26.9 GHz Current-Reuse VCO Using Dynamic Back-Gate-Biasing Technique

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Back Gate ◽  
Ultra Low Power ◽  
Current Reuse ◽  
K Band

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.

scholarly journals A 1.55-to-32-Gb/s Four-Lane Transmitter with 3-Tap Feed Forward Equalizer and Shared PLL in 28-nm CMOS

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 1873
Author(s):  
Chen Cai ◽  
Xuqiang Zheng ◽  
Yong Chen ◽  
Danyu Wu ◽  
Jian Luan ◽  
...  
Keyword(s):  
Data Transmission ◽  
High Speed ◽  
Data Rate ◽  
Quality Data ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Feed Forward ◽  
Fully Integrated ◽  
Output Driver ◽  
28 Nm

This paper presents a fully integrated physical layer (PHY) transmitter (TX) suiting for multiple industrial protocols and compatible with different protocol versions. Targeting a wide operating range, the LC-based phase-locked loop (PLL) with a dual voltage-controlled oscillator (VCO) was integrated to provide the low jitter clock. Each lane with a configurable serialization scheme was adapted to adjust the data rate flexibly. To achieve high-speed data transmission, several bandwidth-extended techniques were introduced, and an optimized output driver with a 3-tap feed-forward equalizer (FFE) was proposed to accomplish high-quality data transmission and equalization. The TX prototype was fabricated in a 28-nm CMOS process, and a single-lane TX only occupied an active area of 0.048 mm2. The shared PLL and clock distribution circuits occupied an area of 0.54 mm2. The proposed PLL can support a tuning range that covers 6.2 to 16 GHz. Each lane's data rate ranged from 1.55 to 32 Gb/s, and the energy efficiency is 1.89 pJ/bit/lane at a 32-Gb/s data rate and can tune an equalization up to 10 dB.

Ground-Adjustable Inductor for Wide-Tuning VCO Design

2012 ◽  
Vol 256-259 ◽  
pp. 2373-2378
Author(s):  
Wu Shiung Feng ◽  
Chin I Yeh ◽  
Ho Hsin Li ◽  
Cheng Ming Tsao
Keyword(s):  
Power Consumption ◽  
Tuning Range ◽  
Supply Voltage ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Wide Tuning Range ◽  
Chip Area ◽  
Ground Plate

A wide-tuning range voltage-controlled oscillator (VCO) with adjustable ground-plate inductor for ultra-wide band (UWB) application is presented in this paper. The VCO was implemented by standard 90nm CMOS process at 1.2V supply voltage and power consumption of 6mW. The tuning range from 13.3 GHz to 15.6 GHz with phase noise between -99.98 and -115dBc/Hz@1MHz is obtained. The output power is around -8.7 to -9.6dBm and chip area of 0.77x0.62mm2.

scholarly journals Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 504
Author(s):  
Ranran Zhao ◽  
Yuming Zhang ◽  
Hongliang Lv ◽  
Yue Wu
Keyword(s):  
Maximum Output Power ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Low Noise ◽  
Signal Frequency ◽  
Maximum Output ◽  
Voltage Controlled Oscillator ◽  
Chip Area ◽  
Frequency Source ◽  
A Charge

This paper realized a charge pump phase locked loop (CPPLL) frequency source circuit based on 0.15 μm Win GaAs pHEMT process. In this paper, an improved fully differential edge-triggered frequency discriminator (PFD) and an improved differential structure charge pump (CP) are proposed respectively. In addition, a low noise voltage-controlled oscillator (VCO) and a static 64:1 frequency divider is realized. Finally, the phase locked loop (PLL) is realized by cascading each module. Measurement results show that the output signal frequency of the proposed CPPLL is 3.584 GHz–4.021 GHz, the phase noise at the frequency offset of 1 MHz is −117.82 dBc/Hz, and the maximum output power is 4.34 dBm. The chip area is 2701 μm × 3381 μm, and the power consumption is 181 mw.

scholarly journals Design of High frequency Voltage Controlled Oscillators for Phase Locked Loop

2018 ◽  
Vol 7 (3.12) ◽  
pp. 871
Author(s):  
Thejusraj. H ◽  
Prithivi Raj ◽  
J Selvakumar ◽  
S Praveen Kumar
Keyword(s):  
Power Consumption ◽  
High Frequency ◽  
High Speed ◽  
Phase Locked Loop ◽  
Clock Recovery ◽  
Ring Oscillator ◽  
Voltage Controlled Oscillator ◽  
Voltage Controlled Oscillators ◽  
Clock Generation ◽  
Consumption Values

This paper presents the analysis of various oscillators that generate high frequency of oscillation for high speed communication, clock generation and clock recovery. The Ring oscillator and the Current Starved Voltage Controlled Oscillator(CSVCO) (for 5-stagewithout resistor and with resistor) have been implemented using the Cadence Virtuoso tool in 90 nm technology. The generated frequency of oscillation and the power consumption values of the voltage controlled oscillators have been calculated after inclusion in the PLL, and were also compared to identify the most suitable voltage controlled oscillator for a given application.

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