scholarly journals Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 994
Author(s):  
Jie-Si Jheng ◽  
Chun-Kai Wang ◽  
Yu-Zung Chiou ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Thin Film ◽  
Bias Voltage ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Bottom Layer ◽  
Ultraviolet B ◽  
Dual Band ◽  
Voltage Range ◽  
Metal Semiconductor Metal ◽  
Ga2o3 Thin Film

Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga2O3/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature of Ga2O3 at 600 °C can improve the crystal quality of Ga2O3 thin film and exhibit the least persistent photoconductivity (PPC) effect. However, a PD with the annealing temperature of Ga2O3 at 600 °C cannot achieve a voltage-tunable dual-band characteristic. On the contrary, the PD without annealing can suppress the carriers from the bottom layer of MgZnO thin film at a lower bias voltage of 1 V. At this time, the peak responsivity at 250 nm was mainly dominated by the top layer of Ga2O3 thin film. Then, as the bias voltage increased to 5 V, the peak detection wavelength shifted from 250 (UVC) to 320 nm (UVB). In addition, the PD with a 25 nm–thick SiO2 layer inserted between Ga2O3 and MgZnO thin film can achieve a broader operating bias voltage range for dual-band applications.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

scholarly journals Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4956
Author(s):  
Yu-Li Hsieh ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Chung-Yi Li ◽  
Chien-Fu Shih ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Gallium Oxide ◽  
Schottky Contact ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Metal Semiconductor Metal ◽  
Ga2o3 Thin Film ◽  
Capacitance Characteristics ◽  
Contact Electrode

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

The Effect of Thermal Annealing of Au Contacts on 6h-Sic and 4h-Sic

1998 ◽  
Vol 512 ◽  
Author(s):  
D. T. Shi ◽  
W. Lu ◽  
H. Chen ◽  
W. E. Collins
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Surface Region ◽  
Atomic Ratio ◽  
Particle Sizes ◽  
Xps Spectra ◽  
Barrier Heights ◽  
Au Film ◽  
Annealing Effects

ABSTRACTThe annealing effects of gold contacts on SiC single crystal substrates have been investigated using SPM and XPS/AES. Ultra-thin Au films with thicknesses of 30 Å and 150 Å, respectively, were fabricated onto both 4H- and 6H-SiC substrates via rf sputtering. The Au/SiC systems were then undergone a series of annealing with temperatures ranging from 200 °C to 400 °C. This study reveals that the sputtering system can generally produce a thin film of uniformly distributed nano-meter sized granular particles. The size of the particles increases with both the thickness of the ultra-thin film and annealing temperature. The thicker Au film revealed pin-hole damages after 300 °C annealing and severe cracking and spalling after 400 °C. However, the thinner Au film only demonstrated the increase of particle sizes. The atomic ratio of gold to silicon in the surface region decreases with the increase of annealing temperature, which indicates the diffusion of gold into silicon carbide. No significant changes of the Schottky barrier heights have been found for Au contacts onto both 6H- and 4H-SiC in the annealing temperature range. After the 400 °C annealing, a noticeable SiO2/SiOx, peak was unveiled in the XPS spectra.

scholarly journals Dual Band Thin Film Infrared Detector Design and Performance Improvement using Plasmonic Nanostructure

2021 ◽  
Author(s):  
Mohammad Bashirpour ◽  
Saeed Khankalantary ◽  
Mohammadreza Kolahdouz
Keyword(s):  
Thin Film ◽  
Quantum Efficiency ◽  
Incident Light ◽  
Infrared Detector ◽  
Antireflection Coating ◽  
Dual Band ◽  
Absorption Enhancement ◽  
Metal Semiconductor Metal ◽  
Conventional Structure ◽  
And Performance

Abstract A new dual band thin film metal-semiconductor-metal infrared photodetector base on InGaAs for wavelength of 1.1–1.7 µm and InSb for wavelength of 3–5 µm is proposed and investigated numerically. One major problem of thin film photodetectors is low quantum efficiency that originates from low optical absorption. The quantum efficiency of proposed structure is improved by locating the array of optimized aluminum nanostructure (Al-NS) between the InGaAs and InSb layers. Using optimized Al-NS between the stack of InGaAs and InSb (InSb/Al-NS/InGaAs) results in plasmon excitation inside the photosensitive layers and so, higher photocarrier generation. Moreover, locating zinc oxide nanorode as an antireflection coating on top of detector reduces the incident light reflection in both spectrum of 1.1–1.7 µm and 3–5 µm. The finite different time domain method is used to investigated the optical properties of proposed structure and optimize the structure. According to the simulation results, designed structure gives rise to 108.1%, 110% and 320% light absorption enhancement at wavelength of 1.33 µm, 1.55 µm and 4 µm, respectively compared to reference conventional structure.

scholarly journals Effects of Bottom Layer Sputtering Pressures and Annealing Temperatures on the Microstructures, Electrical and Optical Properties of Mo Bilayer Films Deposited by RF/DC Magnetron Sputtering

2019 ◽  
Vol 9 (7) ◽  
pp. 1395 ◽  
Author(s):  
Haili Zhao ◽  
Jingpei Xie ◽  
Aixia Mao
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Bottom Layer ◽  
Bilayer Film ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Bilayer Films ◽  
Sputtering Pressure

Most of the molybdenum (Mo) bilayer films are deposited by direct current (DC) magnetron sputtering at the bottom and the top layer (DC/DC). However, the deposition of Mo bilayer film by radio frequency (RF) Mo bottom layer and DC Mo top layer magnetron sputtering has been less studied by researchers. In this paper, the bottom layer of Mo bilayer film was deposited by RF magnetron sputtering to maintain its good adhesion and high reflectance, and the top layer was deposited by DC magnetron sputtering to obtain good conductivity (RF/DC). Generally, the bottom layer sputtering pressure is relatively random, in this paper, the effects of the bottom layer RF sputtering pressures on the microstructures and properties of Mo bilayer films were first studied in detail. Next, in order to further improve their properties, the as-prepared Mo bilayer films at 0.4 Pa bottom layer RF sputtering pressure were annealed at different temperatures and then investigated. Specifically, Mo bilayer films were deposited on soda-lime glass substrates by RF/DC magnetron sputtering at different bottom layer RF sputtering pressures in the range of 0.4–1.2 Pa, the powers of bottom layer RF sputtering and top layer DC sputtering were 120 W and 100 W, respectively. Then, Mo bilayer films, prepared at a bottom layer sputtering pressure of 0.4 Pa and top layer sputtering pressure of 0.3 Pa, were annealed for 30 min at various temperatures in the range of 100–400 °C. The effects of bottom layer sputtering pressures and the annealing temperatures on the microstructures, electrical and optical properties of Mo bilayer films were clarified by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic-force microscopy (AFM), and ultraviolet (UV)-visible spectra, respectively. It is shown that with decreasing bottom layer sputtering pressure from 1.2 to 0.4 Pa and increasing annealing temperature from 100 to 400 °C, the crystallinity, electrical and optical properties of Mo bilayer films were improved correspondingly. The optimized Mo bilayer film was prepared at the top layer sputtering pressure of 0.3 Pa, the bottom layer sputtering pressure of 0.4 Pa and the annealing temperature of 400 °C. The extremely low resistivity of 0.92 × 10−5 Ω.cm was obtained. The photo-conversion efficiency of copper indium gallium selenium (CIGS) solar cell with the optimized Mo bilayer film as electrode was up to as high as 13.5%.

scholarly journals Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Tao-Hsing Chen ◽  
Tzu-Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

The Effect of Annealing Temperature on the Opt-Electric Properties of Ti:GZO Transparent Conducting OxidesThin Film

2013 ◽  
Vol 284-287 ◽  
pp. 324-328
Author(s):  
Tao Hsing Chen ◽  
Tzu Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Corning Glass ◽  
Conductive Film ◽  
Corning Glass Substrate

This study utilizes radio frequency magnetron sputtering(RF-sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate, then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperature is 300, 500 and 550°C, respectively. Moreover, the effects of process parameters on resistivity and optical properties are investigated. The deposited rate, microstructure, thickness and Optical transmission of Ti:GZO thin film are performed. For example, the thicknesses of films were determined by -step profilometer. The crystalline characteristics of thin films were investigated by X-ray diffraction (XRD). Ga and Ti concentration in ZnO film were determined by energy dispersive X-ray spectroscopy (EDS). The electrical properties of the Ti:GZO thin films were measured by Four point probe. The optical properties of Ti:GZO thin films were examined using UV–vis spectrophotometer. The results show that the transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. The resistivity of Ti:GZO decrease with increasing annealing temperature.

Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector

2021 ◽  
Author(s):  
Ümit Doğan ◽  
Fahrettin Sarcan ◽  
Kamuran Kara Koç ◽  
Furkan Kuruoğlu ◽  
Ayşe Erol
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Metal Semiconductor Metal ◽  
Filtered Cathodic Vacuum Arc ◽  
Msm Photodetectors

Abstract In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an increasing in the diameter of grains from 10.5 to 18.3 nm as a function of annealing temperature results in a red shift in the cut-off wavelength of the photodetector from 3.25 eV (381 nm) to 3.23 eV (383 nm). It is demonstrated that the sensitivity and the speed (rise/fall times) of the ZnO thin film based MSM photodetectors enhances with increasing post growth annealing temperature of ZnO thin film due to the increase in the absorption coefficient and the decrease of the total area of the grain boundaries due to the larger grain sizes formation in ZnO thin films with increasing thermal annealing temperature.

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