scholarly journals Stable Local Bit-Line 6 T SRAM Architecture Design for Low-Voltage Operation and Access Enhancement

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 685
Author(s):  
Ming-Hwa Sheu ◽  
S M Salahuddin Morsalin ◽  
Chang-Ming Tsai ◽  
Cheng-Jie Yang ◽  
Shih-Chang Hsia ◽  
...  
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Average Energy ◽  
Process Technology ◽  
Charge Voltage ◽  
Low Voltage Operation ◽  
Noise Margin ◽  
Sram Design ◽  
Near Threshold

To incur the memory interface and faster access of static RAM for near-threshold operation, a stable local bit-line static random-access memory (SRAM) architecture has been proposed along with the low-voltage pre-charged and negative local bit-line (NLBL) scheme. In addition to the low-voltage pre-charged and NLBL scheme being operated by the write bit-line column to work out for the write half-select condition. The proposed local bit-line SRAM design reduces variations and enhances the read stability, the write capacity, prevents the bit-line leakage current, and the designed pre-charged circuit has achieved an optimal pre-charge voltage during the near-threshold operation. Compared to the conventional 6 T SRAM design, the optimal pre-charge voltage has been improved up to 15% for the read static noise margin (RSNM) and the write delay enriched up to 22% for the proposed NLBL SRAM design which is energy-efficient. At 400 mV supply voltage and 25 MHz operating frequency, the read and write energy consumption is 0.22 pJ and 0.23 pJ respectively. After comparing with the related works, the access average energy (AAE) is lower than in other works. The overall performance for the proposed local bit-line SRAM has achieved the highest figure of merit (FoM). The designed architecture has been implemented based on the 1-Kb SRAM macros and TSMC−40 nm GP process technology.

scholarly journals A 0.3 V PNN Based 10T SRAM with Pulse Control Based Read-Assist and Write Data-Aware Schemes for Low Power Applications

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6591
Author(s):  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Shih-Chang Hsia ◽  
S. M. Salahuddin Morsalin ◽  
...  
Keyword(s):  
Low Power ◽  
Supply Voltage ◽  
Random Access ◽  
Average Energy ◽  
Cmos Process ◽  
Pulse Control ◽  
Power Performance ◽  
Process Technology ◽  
Low Leakage ◽  
Noise Margin

An innovative and stable PNN based 10-transistor (10T) static random-access memory (SRAM) architecture has been designed for low-power bit-cell operation and sub-threshold voltage applications. The proposed design belongs to the following features: (a) pulse control based read-assist circuit offers a dynamic read decoupling approach for eliminating the read interference; (b) we have utilized the write data-aware techniques to cut off the pull-down path; and (c) additional write current has enhanced the write capability during the operation. The proposed design not only solves the half-selected problems and increases the read static noise margin (RSNM) but also provides low leakage power performance. The designed architecture of 1-Kb SRAM macros (32 rows × 32 columns) has been implemented based on the TSMC-40 nm GP CMOS process technology. At 300 mV supply voltage and 10 MHz operating frequency, the read and write power consumption is 4.15 μW and 3.82 μW, while the average energy consumption is only 0.39 pJ.

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

scholarly journals Design of Low Power Memory Architecture using 10t Sram Array

2019 ◽  
Vol 8 (4) ◽  
pp. 10650-10653
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Total Power ◽  
Access Time ◽  
Stable Operation ◽  
Sram Cell ◽  
Sram Design

The main aim of electronics is to design low power devices due to the prevalent usage of powered gadget. Ultra low voltage operation of memory cells has become a subject of a lot of interest because of its applications in terribly low energy computing. The stable operation of static random access memory (SRAM) is important for the success of low voltage SRAM and it is achieved by parameter variations of scaled technologies. The power consumption and access time of the SRAM is also a complex parameter due to the unavoidable switching activities of the number of transistors used for different blocks like, SRAM cell, access transistors, pre-charge circuit, sense amplifier and decoders. It has been shown that conventional 6T SRAM fail to achieve low power and delay operation. The proposed 10T SRAM design gives an approach towards the hold power dissipation. The designed circuit has 10 transistors out of that 2 transistors are used as sleep transistor. The sleep transistors are used as switches. Such as header and footer switches and the switches are turned on during active mode of operations and turned off during idle or standby mode of operations. The designed SRAM cell also has conducting pMOS circuit, which can reduces the total power dissipation. The SRAM cell is simulated by using Cadence tool. A supply voltage of 1.8V is used which makes it enough for low power applications. The power obtained as 761.7mW, which reduces 15% of conventional 6T SRAM design. The delay obtained as 125.6ns, which reduces 45% of conventional 6T SRAM.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

scholarly journals Channel Length Biasing for Improving Read Margin of the 8T SRAM at Near Threshold Operation

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 611 ◽  
Author(s):  
Ik Joon Chang ◽  
Yesung Kang ◽  
Youngmin Kim
Keyword(s):  
Threshold Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Channel Length ◽  
Voltage Level ◽  
Exact Data ◽  
Optimum Energy ◽  
The Stability ◽  
20 Nm ◽  
Near Threshold

Reducing a supply voltage in order to minimize power consumption in memory is a major design consideration in this field of study. In static random access memory (SRAM), optimum energy can be achieved by reducing the voltage near the threshold voltage level for near threshold voltage computing (NTC). However, lowering the operational voltage drastically degrades the stability of SRAM. Thus, in conventional 6T SRAM, it is almost impossible to read exact data, even when a small process variation occurs. To address this problem, an 8T SRAM structure is proposed which can be widely used for improving the read stability at lower voltage operation. In this paper, we investigate the channel length biasing effect on the read access transistor of the 8T SRAM in NTC and compare this with 6T SRAM. Read stability can be improved by suppressing the leakage current due to the longer channel length. Simulation results show that, in NTC, up to a 12× read-error reduction can be achieved by the 20 nm channel length biasing in the 8T SRAM compared to 6T SRAM.

Genetic-Algorithm-based Test Pattern Generation for Crosstalk Faults between On-Chip Aggressor and Victim

2015 ◽  
Vol 25 (03) ◽  
pp. 1640018
Author(s):  
Kishore Duganapalli ◽  
Ajoy K. Palit ◽  
Walter Anheier
Keyword(s):  
Supply Voltage ◽  
Fitness Function ◽  
Vlsi Design ◽  
Pattern Generation ◽  
Test Automation ◽  
Process Technology ◽  
Noise Margin ◽  
Aspect Ratios ◽  
On Chip ◽  
Test Vectors

With the shrinking feature size and increasing aspect ratios of interconnects in DSM chips, the coupling noise between adjacent interconnects has become a major signal integrity (SI) issue, giving rise to crosstalk failures. In older technologies, SI issues have been ignored because of high noise immunity of the CMOS circuits and the process technology. However, as CMOS technologies lower down the supply voltage as well as the threshold voltage of a transistor, digital designs are more and more susceptible to noise because of the reduction of noise margin. The genetic algorithms (GAs) have been applied earlier in different engineering disciplines as potentially good optimization tools and for various applications in VLSI design, layout, EDIF digital system testing and also for test automation, particularly for stuck-at-faults and crosstalk-induced delay faults. In this paper, an elitist GA has been developed that can be used as an ATPG tool for generating the test patterns for crosstalk-induced faults between on-chip aggressor and victim and as well as for stuck-at-faults. It has been observed that the elitist GA, when the fitness function is properly defined, has immense potential in extracting the suitable test vectors quickly from randomly generated initial patterns.

RECENT PROGRESS OF FERROELECTRIC MEMORIES

2002 ◽  
Vol 12 (02) ◽  
pp. 315-323 ◽  
Author(s):  
HIROSHI ISHIWARA
Keyword(s):  
Recent Progress ◽  
Low Voltage ◽  
Random Access ◽  
Ferroelectric Materials ◽  
Basic Operation ◽  
Retention Characteristic ◽  
Low Voltage Operation ◽  
Cell Structures ◽  
Ferroelectric Memories ◽  
Non Destructive

Recent progress of ferroelectric random access memories (FeRAMs) is reviewed. First, novel ferroelectric materials, which are suitable for both low temperature crystallization and low voltage operation are introduced. Then, various cell structures in FeRAMs are discussed, in which particular attention is paid to non-destructive-readout-type cells such as a 1T-type cell composed of a single ferroelectric-gate field effect transistor. Finally, a novel 1T2C-type non-destructive-readout cell with good data retention characteristic is introduced and its basic operation is presented.

scholarly journals A design of low voltage OPAMP using split-length transistors

2014 ◽  
Vol 17 (1) ◽  
pp. 62-70
Author(s):  
Khanh Trung Le ◽  
Tu Trong Bui ◽  
Hung Duc Le ◽  
Kha Cong Pham
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Feedback Systems ◽  
Advanced Technique ◽  
Low Voltage Operation ◽  
Feedback Compensation ◽  
Indirect Feedback ◽  
Low Supply Voltage

In the paper, we present a design of a low voltage Operation Amplifier (OPAMP) circuit using split-length transistors. Indirect feedback compensation is an advanced technique used to stabilize the operation of an OPAMP. Cascode transistors are usually implemented for indirect feedback systems. However, these transistors are not suitable for low voltage design. In this study, we have taken advantage of split-length transistors and indirect feedback compensation technique to design a high performance OPAMP. As a result, the OPAMP operates not only at low supply voltage but also at high frequency. The OPAMP has been designed and fabricated in a 0.18um CMOS technology. This OPAMP achieves 100 dB gain, 90 MHz unity gain frequency and 60 degrees phase margin at 2 V supply voltage.

scholarly journals Low Voltage Time-Based Matrix Multiplier-and-Accumulator for Neural Computing System

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2138
Author(s):  
Sungjin Hong ◽  
Heechai Kang ◽  
Jusung Kim ◽  
Kunhee Cho
Keyword(s):  
Pulse Width ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Computing System ◽  
Cmos Process ◽  
Neural Computing ◽  
Hardware Complexity ◽  
Input Size ◽  
Pulse Width Modulator

A time-based matrix multiply-and-accumulate (MAC) operation for a neural computing system is described. A simple and compact time-based matrix MAC structure is proposed that can perform multiplication and accumulation simultaneously in a single multiplier structure, and the hardware complexity is not affected by the matrix input size. To enhance the linearity of the weight factor, an offset-free pulse-width modulator is introduced. The proposed MAC architecture operates at a low supply voltage of 0.5 V while it consumes MAC energy of 0.38 pJ with a 32 nm low-power (LP) predictive technology model (PTM) CMOS process. In addition, the near-subthreshold operation can remove the level shifter to interface between the MAC operator and digital circuits such as static random-access-memory (SRAM) because both can utilize the same level of the supply voltage. The proposed MAC is based on a digital intensive pulse-width modulation, and thus it can further improve its performance and area with more advanced technologies.

scholarly journals A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation

2018 ◽  
Vol 139 ◽  
pp. 60-68 ◽  
Author(s):  
Tony Tae-Hyoung Kim ◽  
Zhao Chuan Lee ◽  
Anh Tuan Do
Keyword(s):  
Low Voltage ◽  
Low Voltage Operation ◽  
Near Threshold
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