Genetic-Algorithm-based Test Pattern Generation for Crosstalk Faults between On-Chip Aggressor and Victim

2015 ◽  
Vol 25 (03) ◽  
pp. 1640018
Author(s):  
Kishore Duganapalli ◽  
Ajoy K. Palit ◽  
Walter Anheier
Keyword(s):  
Supply Voltage ◽  
Fitness Function ◽  
Vlsi Design ◽  
Pattern Generation ◽  
Test Automation ◽  
Process Technology ◽  
Noise Margin ◽  
Aspect Ratios ◽  
On Chip ◽  
Test Vectors

With the shrinking feature size and increasing aspect ratios of interconnects in DSM chips, the coupling noise between adjacent interconnects has become a major signal integrity (SI) issue, giving rise to crosstalk failures. In older technologies, SI issues have been ignored because of high noise immunity of the CMOS circuits and the process technology. However, as CMOS technologies lower down the supply voltage as well as the threshold voltage of a transistor, digital designs are more and more susceptible to noise because of the reduction of noise margin. The genetic algorithms (GAs) have been applied earlier in different engineering disciplines as potentially good optimization tools and for various applications in VLSI design, layout, EDIF digital system testing and also for test automation, particularly for stuck-at-faults and crosstalk-induced delay faults. In this paper, an elitist GA has been developed that can be used as an ATPG tool for generating the test patterns for crosstalk-induced faults between on-chip aggressor and victim and as well as for stuck-at-faults. It has been observed that the elitist GA, when the fitness function is properly defined, has immense potential in extracting the suitable test vectors quickly from randomly generated initial patterns.

scholarly journals A 0.3 V PNN Based 10T SRAM with Pulse Control Based Read-Assist and Write Data-Aware Schemes for Low Power Applications

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6591
Author(s):  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Shih-Chang Hsia ◽  
S. M. Salahuddin Morsalin ◽  
...  
Keyword(s):  
Low Power ◽  
Supply Voltage ◽  
Random Access ◽  
Average Energy ◽  
Cmos Process ◽  
Pulse Control ◽  
Power Performance ◽  
Process Technology ◽  
Low Leakage ◽  
Noise Margin

An innovative and stable PNN based 10-transistor (10T) static random-access memory (SRAM) architecture has been designed for low-power bit-cell operation and sub-threshold voltage applications. The proposed design belongs to the following features: (a) pulse control based read-assist circuit offers a dynamic read decoupling approach for eliminating the read interference; (b) we have utilized the write data-aware techniques to cut off the pull-down path; and (c) additional write current has enhanced the write capability during the operation. The proposed design not only solves the half-selected problems and increases the read static noise margin (RSNM) but also provides low leakage power performance. The designed architecture of 1-Kb SRAM macros (32 rows × 32 columns) has been implemented based on the TSMC-40 nm GP CMOS process technology. At 300 mV supply voltage and 10 MHz operating frequency, the read and write power consumption is 4.15 μW and 3.82 μW, while the average energy consumption is only 0.39 pJ.

Power Efficient and Improved Noise Margin of Sram Cell for System on Chip Applications

2018 ◽  
Author(s):  
Sunil Kumar Ojha ◽  
O.P. Singh ◽  
G.R. Mishra ◽  
P.R. Vaya
Keyword(s):  
Major Part ◽  
System On Chip ◽  
Process Technology ◽  
Power Efficient ◽  
Technology Node ◽  
Noise Margin ◽  
Sram Cell ◽  
On Chip ◽  
Margin Analysis

Noise margin analysis of SRAM cell is became more crucial for on chip applications. Currently the technology is migrating towards less than 10nm node and hence it is necessary to measure the noise margin of SRAM cell very effectively, since memory is one of the major part of system on chips (SOCs) and Network on chips (NOCs) devices. If the margin is not calculated efficiently then it may leads to bad chip product and the whole device which contains this chip may not work as per the expectation. This further leads to low yield which increases the number of defective chips compared to good one. In this paper the noise margin analysis of SRAM cell is performed using 7nm process technology node using HSPICE simulator.

scholarly journals Energy Efficient Digital Circuits using Two Phase Clocking Sub-Threshold Adiabatic Logic

2019 ◽  
Vol 8 (2) ◽  
pp. 101-106
Keyword(s):  
Low Power ◽  
High Speed ◽  
Digital Circuits ◽  
Vlsi Design ◽  
Logic Circuit ◽  
Oxide Semiconductor ◽  
Process Technology ◽  
Two Phase ◽  
Adiabatic Logic ◽  
On Chip

Power is a major constraint in Digital VLSI circuits, due to reduction in sizes of Metal Oxide Semiconductor (MOS) transistors are scaling down. Low-power technologies are used to diminish the power utilization be able to be classified as Sub-threshold CMOS and Adiabatic logic tachniques. In, Sub-threshold CMOS defines a system which reduces the power utilization to inferior than the threshold voltage of a MOS Device, where as Adiabatic logic circuit is a method which minimizes the energy usage through suppress the applied voltage to the resistance of a given VLSI design. This effort deals to offer a subthreshold adiabatic logic circuit of low power CMOS circuits that uses 2φ clocking subthreshold Adiabatic Logic. The digital circuits were designed in HSPICE using 0.18 μm CMOS standard process technology. It is evident from the results that the 2φ Clocking Subthreshold Adiabatic design is beneficial in major application where power starving is of major significance at the same time as in elevated its performance efficiency in DSP processor IC, System on chip, Network on chip and High speed digital ICs.

scholarly journals VERY LARGE SCALE INTEGRATION TINY CHIP WITH NANOPOWER SENSOR APPLICATIONS

2012 ◽  
pp. 116-120
Author(s):  
K.JAYA SWAROOP ◽  
M.I. SUDHARAYAPPA ◽  
CH. JAYAPRAKASH ◽  
V.SURENDRA BABU
Keyword(s):  
Power Consumption ◽  
Power Dissipation ◽  
Large Scale ◽  
Supply Voltage ◽  
Vlsi Design ◽  
Electrical Characterization ◽  
Cmos Process ◽  
Process Technology ◽  
Voltage Range ◽  
Sensor Applications

Semiconductor devices have rapidly advanced over the past years increasing switching(on and off) speed and density of the device, causing an increase in power consumption and power dissipation; accordingly, the issues have been considered and improved . In CMOS 0.5μm process, the designed VLSI mirror-amplifier had power dissipation of 8.41 milliwatts. This technique is changed in this paper. The biasing is done in two steps proved to be correct procedure to improve overall power consumption. Source voltage was considered as 3V for the MOSIS process technology. Layout ,simulation and electrical characterization of the design were carried out by MENTOR GRAPHICS tool and CAD tools were used for the design Holding the scaling and process unchanged at 0.5μm as the previous design, the new VLSI design had power dissipation of 4.39 nanowatts in second step by reducing the dynamic loss. Multi-die chip placement is done for fabrication. More advanced 0.35um CMOS process is used for low threshold voltage and enhanced supply voltage range. This paper presents details of the key research works, results, completed chip layout and applications of the chip.

scholarly journals Stable Local Bit-Line 6 T SRAM Architecture Design for Low-Voltage Operation and Access Enhancement

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 685
Author(s):  
Ming-Hwa Sheu ◽  
S M Salahuddin Morsalin ◽  
Chang-Ming Tsai ◽  
Cheng-Jie Yang ◽  
Shih-Chang Hsia ◽  
...  
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Average Energy ◽  
Process Technology ◽  
Charge Voltage ◽  
Low Voltage Operation ◽  
Noise Margin ◽  
Sram Design ◽  
Near Threshold

To incur the memory interface and faster access of static RAM for near-threshold operation, a stable local bit-line static random-access memory (SRAM) architecture has been proposed along with the low-voltage pre-charged and negative local bit-line (NLBL) scheme. In addition to the low-voltage pre-charged and NLBL scheme being operated by the write bit-line column to work out for the write half-select condition. The proposed local bit-line SRAM design reduces variations and enhances the read stability, the write capacity, prevents the bit-line leakage current, and the designed pre-charged circuit has achieved an optimal pre-charge voltage during the near-threshold operation. Compared to the conventional 6 T SRAM design, the optimal pre-charge voltage has been improved up to 15% for the read static noise margin (RSNM) and the write delay enriched up to 22% for the proposed NLBL SRAM design which is energy-efficient. At 400 mV supply voltage and 25 MHz operating frequency, the read and write energy consumption is 0.22 pJ and 0.23 pJ respectively. After comparing with the related works, the access average energy (AAE) is lower than in other works. The overall performance for the proposed local bit-line SRAM has achieved the highest figure of merit (FoM). The designed architecture has been implemented based on the 1-Kb SRAM macros and TSMC−40 nm GP process technology.

Enabling Electro-Optical Failure Analysis within Extreme Compression Test Architecture

2016 ◽  
Author(s):  
Rudolf Schlangen ◽  
Jon Colburn ◽  
Joe Sarmiento ◽  
Bala Tarun Nelapatla ◽  
Puneet Gupta
Keyword(s):  
Failure Analysis ◽  
Compression Test ◽  
Test Pattern ◽  
Pattern Generation ◽  
Output Data ◽  
Test Compression ◽  
Test Loop ◽  
On Chip ◽  
Test Architecture

Abstract Driven by the need for higher test-compression, increasingly many chip-makers are adopting new DFT architectures such as “Extreme-Compression” (XTR, supported by Synopsys) with on-chip pattern generation and MISR based compression of chain output data. This paper discusses test-loop requirements in general and gives Advantest 93k specific guidelines on test-pattern release and ATE setup necessary to enable the most established EFA techniques such as LVP and SDL (aka DLS, LADA) within the XTR test architecture.

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

Manufacturing Metamaterials Using Synchrotron Lithography

2010 ◽  
Vol 75 ◽  
pp. 230-239
Author(s):  
Herbert O. Moser ◽  
Linke Jian ◽  
Shenbaga M.P. Kalaiselvi ◽  
Selven Virasawmy ◽  
Sivakumar M. Maniam ◽  
...  
Keyword(s):  
Electromagnetic Waves ◽  
Cost Effective ◽  
Pattern Generation ◽  
Geometrical Parameters ◽  
X Ray ◽  
Spectral Bands ◽  
Left Handed ◽  
Aspect Ratios ◽  
Multi Level ◽  
Primary Pattern

The function of metamaterials relies on their resonant response to electromagnetic waves in characteristic spectral bands. To make metamaterials homogeneous, the size of the basic resonant element should be less than 10% of the wavelength. For the THz range up to the visible, structure details of 50 nm to 30 μm are required as are high aspect ratios, tall heights, and large areas. For such specifications, lithography, in particular, synchrotron radiation deep X-ray lithography, is the method of choice. X-ray masks are made via primary pattern generation by means of electron or laser writing. Several different X-ray masks and accurate mask-substrate alignment are necessary for architectures requiring multi-level lithography. Lithography is commonly followed by electroplating of metallic replica. The process can also yield mould inserts for cost-effective manufacture by plastic moulding. We made metamaterials based on rod-split-rings, split-cylinders, S-string bi-layer chips, and S-string meta-foils. Left-handed resonance bands range from 2.4 to 216 THz. Latest is the all-metal self-supported flexible meta-foil with pass-bands of 45% up to 70% transmission at 3.4 to 4.5 THz depending on geometrical parameters.

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