Rapid On-Substrate Curing of Thick Protective Package Sealing for Automotive Assembly

Author(s):  
John Moore ◽  
Jevon Spencer

Protective encapsulant and sealing materials that cure upon delivery are desired for high volume automotive assembly. Unlike many coatings created for electronics, these materials are milimeters thick and have desirable elastomeric properties to withstand decades of stress. While the Automotive Electronics Council (AEC) stress test qualification for integrated circuits (AEC Q100, 1994) may set material temperature resistance at 150C, targets of 200C or 250C are desirable. The ideal polymer exhibits low permeability, effectively creating a barrier to moisture, chemicals, and gases that may emanate anywhere on the chassis. While conventional Buna and Viton rubbers represent a major share of gasketing to protect electronic packages, their design and manufacturing infrastructure cannot meet the pace of prototyping. Polymer compositing with reactive diluents now makes it possible to use CAD fed delivery tools that cure on-contact. Such robotic operated equipment delivers by variable syringe head design on vertical, overhead, or irregular surface contours. Sealant forms that once took months with costly quantity orders, now take seconds in the lab and on the assembly floor. Daetec has created a technology that meets these rapid assembly requirements with properties that exceed the current AEC targets. A complete process will be presented with state of the art LED fiber optic curing on the substrate. Data and application results using comparative specimens will be presented.

2014 ◽  
Vol 5 (1) ◽  
pp. 737-741
Author(s):  
Alejandro Dueñas Jiménez ◽  
Francisco Jiménez Hernández

Because of the high volume of processing, transmission, and information storage, electronic systems presently requires faster clock speeds tosynchronizethe integrated circuits. Presently the “speeds” on the connections of a printed circuit board (PCB) are in the order of the GHz. At these frequencies the behavior of the interconnects are more like that of a transmission line, and hence distortion, delay, and phase shift- effects caused by phenomena like cross talk, ringing and over shot are present and may be undesirable for the performance of a circuit or system.Some of these phrases were extracted from the chapter eight of book “2-D Electromagnetic Simulation of Passive Microstrip Circuits” from the corresponding author of this paper.


2019 ◽  
Vol 2019 (1) ◽  
pp. 000115-000119 ◽  
Author(s):  
Andy Mackie ◽  
Hyoryoon Jo ◽  
Sze Pei Lim

Abstract Flip-chip assembly accounts for more than 80% of the advanced packaging technology platform, compared to fan-in, fan-out, embedded die, and through silicon via (TSV). Flip-chip interconnect remains a critical assembly process for large die used in artificial intelligence processors; thin die that warps at elevated temperatures; heterogeneous integration in SiP applications; flip-chip on leadframe; and MicroLED die usage. This paper will first outline trends in evolving flip-chip and direct chip placement (DCP) technology, then will examine the changing nature of the solder bump, the interconnect itself, and the substrate. Many variables of the flip-chip assembly process will be discussed, including standard solder bumps to micro Cu-pillar bumps with different alloys; different pad surface finishes of Cu OSP, NiAu, and solder on pad (SOP); and from regular pads on substrates to bond-on-trace applications. A major focus will be on flip-chip assembly methods, from old C4 conventional reflow processing to thermocompression bonding (TCB), and the latest laser assisted bonding (LAB) technology, with an emphasis on how the usage of different technologies necessitates different assembly materials, especially fluxes. Flip-chip fluxes such as the commonly used water-washable flux, the standard no-clean flux, and the ultra-low residue flux, and how these fluxes react to different processing methods, will be an area of discussion. Finally, the paper will examine the need for increased reliability as the technology inevitably moves into the high-volume, zero-defect arena of automotive electronics.


2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000123-000128
Author(s):  
Erick M. Spory

There is an ever-increasing demand for electronics in higher temperature applications, both in variety and volume. In many cases, the actual integrated circuit within the plastic packaging can support operation at higher temperatures, although the packaging and connectivity is unable to do so. Ultimately, there still remains a significant gap in the volume demand required for high temperature integrated circuit lines to justify support of more expensive ceramic solutions by the original component manufacturer vs. the cheaper, high-volume PEM flows. Global Circuit Innovations, Inc. has developed a manufacturable, cost-effective solution to extract the integrated circuit from any plastic encapsulated device and subsequently re-package that device into an identical ceramic footprint, with the ability to maintain high-integrity connectivity to the device and enabling functionality for 1000's of hours at temperatures at 250C and beyond. This process represents a high-value added solution to provide high-temperature integrated circuits for a large spectrum of requirements: low-volume, quick-turn evaluation of integrated circuit prototyping, as well as medium to high-volume production needs for ongoing production needs. Although both die extraction and integrated circuit pad electroless nickel/gold plating have both been performed successfully for many years in the semiconductor industry, Global Circuit Innovations, Inc. has been able to combine the two in a reliable, volume manufacturing flow to satisfy many of the stringent requirements for high-temperature applications.


Author(s):  
C. Michael Garner

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.


1985 ◽  
Vol 28 (6) ◽  
pp. 24-26
Author(s):  
Michael Bustamante ◽  
Garrett Hicks

This paper describes the methods used by Chrysler Huntsville Automotive Electronics to obtain the quality, durability and reliability characteristics needed to fulfill the 193,200-km (120,000 mile) field performance requirements for Chrysler engine controls, radios and other electronic feature products. The paper will describe a case history, including the steps taken by both Chrysler Huntsville Automotive Electronics plant and one of their integrated circuit suppliers to attain certain quality levels.


Author(s):  
Richard R. Grzybowski ◽  
Ben Gingrich

Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics and crystals are also required. This paper will present characterization data obtained from a number of silicon high temperature integrated evaluated over a range of elevated temperatures and aged at a selected high temperature. This paper will also present a representative cross section of high temperature passive component characterization data for device types needed by many applications. Device types represented will include both small signal and power resistors and capacitors. Specific problems encountered with the employment of these devices in harsh environments will be discussed for each family of components. The goal in presenting this information is to demonstrate the viability of a significant number of commercially available silicon integrated circuits and passive components that operate at elevated temperatures as well as to encourage component suppliers to continue to optimize a selection of their product offerings for operation at higher temperatures. In addition, systems designers will be encouraged to view this information with an eye toward the conception and implementation of reliable and affordable high temperature systems.


Author(s):  
Mohamed Hashish

Abrasive waterjets were used for the first time to commercially singulate electronic chips such as those used for flash memory cards found in digital cameras, cell phones, and USB storage devices. Cutting these components requires high cutting speed, high edge quality, accuracy, and precision. For example, a minimal accuracy needed is about 0.1-mm and a minimum Cpk of 1.33. A relatively small AWJ (~ 0.38 mm) was successfully used to accurately cut chips at speeds of 20 mm/s to 60 mm/s. It was determined that the use of machine vision is critical to meeting the accuracy requirements. The cutting process consisted of piercing starting holes and then cutting shaped pattern cuts to contour the chip components. Drilling holes was performed without delamination and the cutting speed was optimized to meet the intricate chip geometry. Because of the relatively high volume of components to be cut, requiring around the clock duty, process and machine reliability are of critical importance. This paper discusses the results and observation of the cutting process as well as the performance of the system.


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