HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS
Through a systematic study, Silicon Carbide Gate Turn Off (GTO) Thyristors with record performance are demonstrated. Several Anode-Gate interdigitation schemes (raster, hex and involute) were explored to investigate their effect on the static as well as switching characteristics. An optimized edge-termination was employed that resulted in the achievement of near-theoretical forward blocking voltages (>8.1kV), and high yields (>60% on 8mm×8mm) on GTO Thyristors with 60μm/5×1014 cm−3 voltage-blocking epitaxial layers. A low differential specific on-resistance of 2.55 mΩ-cm2, and low on-state voltage drop were measured at 500 A/cm2. High Temperature forward I-V and reverse I-V characteristics show extremely stable performance with temperature, in contrast to state-of-the-art Si GTO Thyristors. Turn-on transient characteristics show a stable delay time of about 400 nano-seconds, and a rise-time that decreases with increasing temperature. Detailed high temperature turn-off measurements conducted using Anode-Switched mode was used to extract the value of minority carrier lifetimes as a function of temperature for the first time.