Evaluation of Cu/Sn-Cu Bump Bonding Processes for 3D Integration Using a Fluxing Adhesive

2010 ◽  
Vol 7 (3) ◽  
pp. 143-145 ◽  
Author(s):  
Alan Huffman ◽  
Christopher Gregory ◽  
Matthew Lueck ◽  
Jason Reed ◽  
Dorota Temple ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Environmental Protection ◽  
Cross Section ◽  
Sem Analysis ◽  
Electrical Measurements ◽  
3D Integration ◽  
Test Vehicle ◽  
Area Array ◽  
Underfill Material

We present the results of a study to evaluate the use of a fluxing adhesive developed by LORD Corp. in the bonding of Cu/Sn-Cu bump structures for interconnection in 3D integration structures. Using an area-array daisy chain test vehicle with a bump pitch of 25 μm, samples are prepared using our standard bonding methodology and also with the fluxing adhesive and then evaluated through electrical measurements and cross section SEM analysis. The results show that the use of the fluxing underfill material results in a well-formed bond between the Cu and Cu/Sn bumps and encapsulates the interconnects to provide environmental protection and additional mechanical strength to the interconnect array.

A technique for preparing semiconductor cross sections for both TEM and SEM analysis

1989 ◽  
Vol 47 ◽  
pp. 712-713
Author(s):  
Stanley J. Klepeis ◽  
J.P. Benedict ◽  
R.M Anderson
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Cross Sections ◽  
Sem Analysis ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Polished Cross Section ◽  
Area Of Interest ◽  
Polished Side

The ability to prepare a cross-section of a specific semiconductor structure for both SEM and TEM analysis is vital in characterizing the smaller, more complex devices that are now being designed and manufactured. In the past, a unique sample was prepared for either SEM or TEM analysis of a structure. In choosing to do SEM, valuable and unique information was lost to TEM analysis. An alternative, the SEM examination of thinned TEM samples, was frequently made difficult by topographical artifacts introduced by mechanical polishing and lengthy ion-milling. Thus, the need to produce a TEM sample from a unique,cross-sectioned SEM sample has produced this sample preparation technique.The technique is divided into an SEM and a TEM sample preparation phase. The first four steps in the SEM phase: bulk reduction, cleaning, gluing and trimming produces a reinforced sample with the area of interest in the center of the sample. This sample is then mounted on a special SEM stud. The stud is inserted into an L-shaped holder and this holder is attached to the Klepeis polisher (see figs. 1 and 2). An SEM cross-section of the sample is then prepared by mechanically polishing the sample to the area of interest using the Klepeis polisher. The polished cross-section is cleaned and the SEM stud with the attached sample, is removed from the L-shaped holder. The stud is then inserted into the ion-miller and the sample is briefly milled (less than 2 minutes) on the polished side. The sample on the stud may then be carbon coated and placed in the SEM for analysis.

scholarly journals Are We Able to Print Components as Strong as Injection Molded?—Comparing the Properties of 3D Printed and Injection Molded Components Made from ABS Thermoplastic

2021 ◽  
Vol 11 (15) ◽  
pp. 6946
Author(s):  
Bartłomiej Podsiadły ◽  
Andrzej Skalski ◽  
Wiktor Rozpiórski ◽  
Marcin Słoma
Keyword(s):  
Tensile Strength ◽  
Injection Molding ◽  
Mechanical Strength ◽  
Cross Section ◽  
Fused Deposition Modeling ◽  
High Strength ◽  
Large Cross Section ◽  
Fused Deposition ◽  
Injection Molded ◽  
The Cross

In this paper, we are focusing on comparing results obtained for polymer elements manufactured with injection molding and additive manufacturing techniques. The analysis was performed for fused deposition modeling (FDM) and single screw injection molding with regards to the standards used in thermoplastics processing technology. We argue that the cross-section structure of the sample obtained via FDM is the key factor in the fabrication of high-strength components and that the dimensions of the samples have a strong influence on the mechanical properties. Large cross-section samples, 4 × 10 mm2, with three perimeter layers and 50% infill, have lower mechanical strength than injection molded reference samples—less than 60% of the strength. However, if we reduce the cross-section dimensions down to 2 × 4 mm2, the samples will be more durable, reaching up to 110% of the tensile strength observed for the injection molded samples. In the case of large cross-section samples, strength increases with the number of contour layers, leading to an increase of up to 97% of the tensile strength value for 11 perimeter layer samples. The mechanical strength of the printed components can also be improved by using lower values of the thickness of the deposited layers.

On the Origins, Status, and Future of Flip Chip & Wafer Level Packaging

2010 ◽  
Vol 2010 (1) ◽  
pp. 000325-000332 ◽  
Author(s):  
Alan Huffman ◽  
Philip Garrou
Keyword(s):  
Technological Change ◽  
Flip Chip ◽  
Emerging Technologies ◽  
Unit Area ◽  
Form Factors ◽  
Electrical Performance ◽  
Wafer Level ◽  
3D Integration ◽  
Wafer Level Packaging ◽  
Area Array

As IC scaling continues to shrink transistors, the increased number of circuits per chip requires more I/O per unit area (Rent's rule). High I/O count, the need for smaller form factors and the need for better electrical performance drove the technological change towards die being interconnected (assembled) by area array techniques. This review will examine this evolution from die wire bonded on lead frames to flip chip die in wafer level or area array packages and discuss emerging technologies such as copper pillar bumps, fan out packaging, integrated passives, and 3D integration..

Design and Direct Assembly of 2.5D/3D Rigid Silicon Interposer on PCB

2014 ◽  
Vol 2014 (1) ◽  
pp. 000783-000786 ◽  
Author(s):  
Farhang Yazdani
Keyword(s):  
Flip Chip ◽  
Thermal Stresses ◽  
Stress Test ◽  
Temperature Cycle ◽  
3D Integration ◽  
Test Vehicle ◽  
Direct Assembly ◽  
Solder Balls ◽  
Present Design ◽  
The Cost

Silicon interposer is emerging as a vehicle for integrating dies with sub 50um bump pitch in 2.5D/3D configuration. Benefits of 2.5D/3D integration are well explained in the literature, however, cost and reliability is a major concern especially with the increase in interposer size. Among the challenges, reliability issues such as warpage, cracks and thermal-stresses must be managed, in addition, multi-layer build-up flip chip substrate cost and its impact on the overall yield must be considered. Because of these challenges, 2.5D/3D silicon interposer has developed a reputation as a costly process. To overcome the reliability challenges and cost associated with typical thin interposer manufacturing and assembly, a rigid silicon interposer type structure is disclosed. In this study, interposer with thickness of greater than 300um is referred to as rigid interposer. Rigid silicon interposer is directly assembled on PCB without the need for intermediary substrate. This eliminates the need for an intermediary substrate, thin wafer handling, wafer bonding/debonding procedures and Through Silicon Via (TSV) reveal processes, thus, substantially reducing the cost of 2.5D/3D integrated products while improving reliability. A 10X10mm2 rigid silicon interposer test vehicle with 310um thickness was designed and fabricated. BGA side of the interposer with 1mm ball pitch was bumped with eutectic solder balls through a reflow process. Interposer was then assembled on a 50X50mm2 FR-4 PCB. We present design and direct assembly of the rigid silicon interposer on PCB followed by temperature cycle results using CSAM images at 250, 500, 750 and 1000 cycles. It is shown that all samples successfully passed the temperature cycle stress test.

Scaling Challenges of Semiconductor Packaging in the Era of Big Data

2013 ◽  
Vol 2013 (1) ◽  
pp. 000402-000407 ◽  
Author(s):  
Yasumitsu Orii ◽  
Akihiro Horibe ◽  
Kazushige Toriyama ◽  
Keiji Matsumoto ◽  
Hirokazu Noma ◽  
...  
Keyword(s):  
Big Data ◽  
Material Selection ◽  
Organic Substrate ◽  
Critical Element ◽  
3D Integration ◽  
Technology Innovations ◽  
Fine Pitch ◽  
3D Chip Stacking ◽  
Semiconductor Packaging ◽  
Underfill Material

In advent of multimedia, social media and Internet of Things, our world is exploding with enormous amount of data, so-called Big Data. The use of Big Data provides us with opportunities to bring solutions and innovations to variety of industries such as healthcare, energy, banking and automotive. On the other hand, the computing requirement to analyze this large volume of data is becoming higher than ever. The exascale computing is required in the Era of Big Data. In order to achieve this demand, further technology innovations for package scaling such as 3D-IC with TSV (through silicon via) are needed. The fine pitch die-to-die interconnection is a key element in increasing the total bandwidth in 3D integration. The important technologies in 3D integration include micro-bumping, thermally enhanced underfill materials and advanced interposers. Material selection for reliable fine-pitch interconnection has become a critical challenge in 3D chip stacking. Underfill material in die-to-die device is also a critical element in reducing total packaging stress and in enhancing vertical thermal conductivity. Low CTE high-density organic substrate is an emerging technology for 2.5D structure.

Comparing Different Cross-Section Cutting Methods for SEM Analysis of Membrane-Electrodes Assemblies

2019 ◽  
Vol 92 (8) ◽  
pp. 87-94 ◽  
Author(s):  
Susana Merino ◽  
Carlos Novillo ◽  
Gonzalo de Diego ◽  
Julio J Conde ◽  
María Antonia Folgado ◽  
...  
Keyword(s):  
Cross Section ◽  
Sem Analysis ◽  
Membrane Electrodes

Fabrication and Characterization of Alumina/Zirconia Ceramic Compound

2012 ◽  
Vol 724 ◽  
pp. 249-254 ◽  
Author(s):  
Bum Rae Cho ◽  
Ji Hoon Chae ◽  
Bo Lang Kim ◽  
Jong Bong Kang
Keyword(s):  
Mechanical Properties ◽  
Fracture Toughness ◽  
Low Temperature ◽  
Mechanical Strength ◽  
Sem Analysis ◽  
Zirconia Ceramic ◽  
Sintering Process ◽  
Sintering Aids ◽  
X Ray Diffraction

Sintered ZTA(zirconia toughened alumina) which has good mechanical properties at a low temperature was produced by milling and mixing with Al2O3 and ZrO2(3Y-TZP). In order to examine the effect of sintering aids on the mechanical properties of ZTA, fracture toughness and hardness of the produced ZTA were observed in accordance with change of the added quantity of ZrO2 Scanning electron microscopy and X-ray diffraction technique were applied to observe microstructural change and phase transformation during the process. Experimental results showed that the addition of sintering aids in ZTA at a low temperature induced densification and adding SiO2 and talc lowered sintering temperature and promoted crystallization process of the compound. The mechanical strength of ZTA added ZrO2 showed higher mechanical strength and SEM analysis revealed that Al2O3 and ZrO2 during the sintering process restrained the grain growth each other. Especially, the 92% Al2O3 added sintering aids showed more than 98% of the theoretical density and more than 1500 Hv of hardness value at a low temperature of 1400. It was also showed that the fracture toughness is gradually increasing first and decreasing later in accordance with the quantity of ZrO2.

Reliability Characterization of Moisture-Induced Degradation of Low-K Dielectric Behavior for Advanced Interconnects

1999 ◽  
Vol 565 ◽  
Author(s):  
A. M. Ionescu ◽  
F. Mondon ◽  
D. Blachier ◽  
Y. Morand ◽  
G. Reimbold
Keyword(s):  
Moisture Diffusion ◽  
Diffusion Path ◽  
Moisture Stress ◽  
Sem Analysis ◽  
Dielectric Behavior ◽  
Electrical Measurements ◽  
Metal Structures ◽  
Multi Level ◽  
Low K

AbstractThis paper reports degradation characteristics of low-k dielectric (FOX) in multi-level metal structures (comb-type capacitors) submitted to moisture stress. A large increase of leakage current (>105) and capacitance (up to ×3) is observed after moisture stress when only FOX is used as lateral dielectric, while moderate degradation takes place when an oxide liner is placed between FOX and metal lines. Enhanced moisture induced degradation is found on previously probed dices with respect to virgin devices. Systematic electrical measurements, combined with SEM analysis, are performed to find out the moisture diffusion path. When contact pads are damaged by previous probing (owing to the mechanical weakness of FOX in the pad stack), they provide a direct entry path for enhanced humidity intake. Humidity is also shown to enter through wafer border. Using a SiO2 liner combined with FOX improves considerably the resistance to moisture degradation.

Advanced Planarized Aluminum Metallization Process

1992 ◽  
Vol 260 ◽  
Author(s):  
F. S. Chen ◽  
G. A. Durit ◽  
J. W. Staman ◽  
C. C. Wei ◽  
F. T. Liou
Keyword(s):  
Integrated Circuits ◽  
Cross Section ◽  
Sem Analysis ◽  
Prior History ◽  
Preparation Methods ◽  
Attractive Option ◽  
Aluminum Metallization ◽  
Backscattered Electron ◽  
Electron Imaging ◽  
Metallization Process

ABSTRACTSputtered aluminum has been used for interconnection in integrated circuits because of its low resistivity. However conventional sputtered aluminum has two important drawbacks, poor step coverage and poor planarization, which make it unsuitable for eubmicron multi-level interconnect process. CVD tungsten is an attractive option for forming plugs and interconnects but suffers several drawbacks. It is therefore preferable to use aluminum for both plugs and interconnections due to its simplicity and established prior history. We have developed a fully planarieed aluminum metallization process which produces void free contact plugs.In order to verify the filling of the contact plugs, we have carried out extensive SEM analysis using secondary electron and backscattered electron imaging methods with various SEM sample preparation methods, i.e. chemical etching to extract the metal plug without inducing any damage to the metal, SEM cross section prepared with some oxide (about 1000Å) left in front of the metal plug and standard SEM cross section through the metal plug. Complementary secondary and backscattered imaging has proven to be a reliable method for ascessing the filling of the contact holes. Wafer and package level reliability data for the planarized aluminum metallization used on a megabit device will also be presented.

Excimer laser-assisted etching of polysilicon at 193 nm

1987 ◽  
Vol 2 (6) ◽  
pp. 895-901 ◽  
Author(s):  
M. D. Armacost ◽  
S. V. Babu ◽  
S. V. Nguyen ◽  
J. F. Rembetski
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Cross Section ◽  
Thermal Effects ◽  
Etch Rate ◽  
Sem Analysis ◽  
Surface Roughening ◽  
193 Nm ◽  
Limiting Value ◽  
Scanning Electron

Excimer laser-assisted etching of polysilicon at 193 nm was studied in the presence of CF3Br, CF2Cl2, and NF3. In the presence of 193 nm radiation, CF3Br showed some propensity to etch polysilicon, while CF2Cl2 did not show any appreciable etching. In the presence of NF3, maximum etch rates of 0.6 Å/pulse were obtained for pressures greater than 500 Torr and fluences exceeding 200 mJ/(cm2 pulse). The etch rate increased with both fluences and pressure to a limiting value of 0.6 Å/pulse. An adsorptive etch mechanism was proposed, where NF3 molecules diffuse to the surface, adsorb, and then react after absorbing laser radiation. Thermal effects enhance this process and appear to dominate at lower pressures (<400 Torr) and higher fluences. Etching caused by the gas phase formation of F atoms is minimal due to the low absorption cross section of NF3 at 193 nm. Etching of submicron profiles in polysilicon was also examined. Polysilicon samples masked by patterned SiO2 were exposed to NF3 and 193 nm ArF radiation. Subsequent scanning electron microscopy (SEM) analysis demonstrated directional etching with some surface roughening.

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